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Band diagrams of (a) valence band and (b) conduction band in the GaN/InGaN p–i–n structure. Carrier wavefunctions are not centrosymmetric due to polarization. Ep and En are the first bound states in the valence and conduction bands, respectively. (c) Induced sheet charge at the interfaces of QW due to polarization.
Published: March 2023
FIG. 3.15 Band diagrams of (a) valence band and (b) conduction band in the GaN/InGaN pin structure. Carrier wavefunctions are not centrosymmetric due to polarization. E p and E n are the first bound states in the valence and conduction bands More about this image found in Band diagrams of (a) valence band and (b) conduction band in the GaN/InGaN ...
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(a) shows the time-resolved current response of multilayers for a voltage pulse of 500 ns pulse width. Inset shows the half input pulse profile for the input pulse of 1.8 V amplitude and 500 ns pulse width. (b) Polarization-time curves obtained by integrating the I–t curve of multilayer samples. (c) Voltage–time and current–time curve for individual BCZT film. (d) Polarization-time curve for individual BCZT film.
Published: March 2023
FIG. 10.9 (a) shows the time-resolved current response of multilayers for a voltage pulse of 500 ns pulse width. Inset shows the half input pulse profile for the input pulse of 1.8 V amplitude and 500 ns pulse width. (b) Polarization-time curves obtained by integrating the It More about this image found in (a) shows the time-resolved current response of multilayers for a voltage p...
Images
Band diagrams of the AlGaN/GaN heterostructure for HEMT. Strained AlGaN is grown pseudomorphically on relaxed GaN. A positive polarization charge (+σ) is induced at the interface, which attracts electrons and forms 2DEG.
Published: March 2023
FIG. 3.20 Band diagrams of the AlGaN/GaN heterostructure for HEMT. Strained AlGaN is grown pseudomorphically on relaxed GaN. A positive polarization charge ( + σ ) is induced at the interface, which attracts electrons and forms 2DEG. More about this image found in Band diagrams of the AlGaN/GaN heterostructure for HEMT. Strained AlGaN is ...
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(a) Schematic of the pseudocubic unit cell with indication of eight equivalent polarization directions of 〈111〉. (b) The projection of the spin tip on (111) plane of pseudocubic BFO and (c) schematic of the spin cycloidal antiferromagnetic arrangement.
Published: March 2023
FIG. 7.2 (a) Schematic of the pseudocubic unit cell with indication of eight equivalent polarization directions of 〈111〉. (b) The projection of the spin tip on (111) plane of pseudocubic BFO and (c) schematic of the spin cycloidal antiferromagnetic arrangement. More about this image found in (a) Schematic of the pseudocubic unit cell with indication of eight equival...
Images
(a) The out-of-plane, (b) in-plane phase contrast image obtained from BFO with tetragonal phase grown on LSMO∼2 nm, and (c) the corresponding out-of-plane domain contrast obtained from the phase field modeling indicating only 〈001〉 polarization dominating the domain pattern.
Published: March 2023
FIG. 7.10 (a) The out-of-plane, (b) in-plane phase contrast image obtained from BFO with tetragonal phase grown on LSMO∼2 nm, and (c) the corresponding out-of-plane domain contrast obtained from the phase field modeling indicating only 〈001〉 polarization dominating the domain pattern. More about this image found in (a) The out-of-plane, (b) in-plane phase contrast image obtained from BFO w...
Images
(a) The schematic of the pseudocubic unit cell of BFO indicating the polarization vector pointing toward [111] direction and the schematic of the PFM tip approaching from the top, (b) out-of-plane phase contrast, and (c) in-plane phase contrast obtained from a PFM for a BFO/STO superlattice structure grown on STO(001).
Published: March 2023
FIG. 7.4 (a) The schematic of the pseudocubic unit cell of BFO indicating the polarization vector pointing toward [111] direction and the schematic of the PFM tip approaching from the top, (b) out-of-plane phase contrast, and (c) in-plane phase contrast obtained from a PFM for a BFO/STO More about this image found in (a) The schematic of the pseudocubic unit cell of BFO indicating the polari...
Images
(a) The schematic of the pseudocubic unit cell of BFO indicating the polarization vector pointing toward [001] direction and the schematic of the PFM tip approaching from the top, (b) out-of-plane phase contrast, and (c) in-plane phase contrast obtained from a PFM for a BFO/STO superlattice structure grown on STO(001).
Published: March 2023
FIG. 7.5 (a) The schematic of the pseudocubic unit cell of BFO indicating the polarization vector pointing toward [001] direction and the schematic of the PFM tip approaching from the top, (b) out-of-plane phase contrast, and (c) in-plane phase contrast obtained from a PFM for a BFO/STO More about this image found in (a) The schematic of the pseudocubic unit cell of BFO indicating the polari...
Images
(a) The out-of-plane (b) in-plane phase contrast image obtained from BFO with mixed phase (rhombohedral + tetragonal) grown on LSMO∼10 nm and (c) the corresponding out-of-plane domain contrast obtained from phase field modeling, indicating the components apart from 〈001〉 polarization emerging in the film.
Published: March 2023
FIG. 7.11 (a) The out-of-plane (b) in-plane phase contrast image obtained from BFO with mixed phase (rhombohedral + tetragonal) grown on LSMO∼10 nm and (c) the corresponding out-of-plane domain contrast obtained from phase field modeling, indicating the components apart from 〈001〉 polarization More about this image found in (a) The out-of-plane (b) in-plane phase contrast image obtained from BFO wi...
Book Chapter
Book cover for Strain Engineering in Functional Materials and Devices
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_007
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... is an interesting property in a given material that arises due to its coupling between two important functional properties like electrical and magnetic property. Conventionally, both electric polarization and magnetization were dealt as mutually exclusive properties due to their origin in materials. The coupling...
Book Chapter
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425712_020
EISBN: 978-0-7354-2571-2
ISBN: 978-0-7354-2568-2
... to represent the collective conceptual knowledge of students in terms of facets and schemes of knowledge. The authors stressed that traditional instruction is often inadequate in developing a more scientific comprehension of optics. Polarization of light with final year high school students In the Croatian...
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(a) Energetics and density of states of BaTiO3 (BTO) and PbTiO3 (PTO), (b) energetics, buckling (Δ) and polarization (P) of 1T MoS2, and (c) energetics, charge disproportionation, and octahedral distortion in Bi2−xSrxFeCrO6.
Published: March 2023
FIG. 2.9 (a) Energetics and density of states of BaTiO3 (BTO) and PbTiO3 (PTO), (b) energetics, buckling (Δ) and polarization (P) of 1T MoS2, and (c) energetics, charge disproportionation, and octahedral distortion in Bi2 More about this image found in (a) Energetics and density of states of BaTiO3 (BTO) and PbTiO...
Book Chapter
Book cover for Strain Engineering in Functional Materials and Devices
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_006
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... Ginzburg–Landau–Devonshire (GLD) theory to define the total free energy of a ferroelectric material. GLD theory expresses the total free energy as the function of a vector-valued order parameter field, termed as spontaneous polarization field P ( r ). Note that all components of P go to zero...
Book Chapter
Book cover for Strain Engineering in Functional Materials and Devices
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_010
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... consisting of physically separated piezoelectric and magneto strictive materials are utilized ( Nan et al., 2008 ). The strain developed in either the piezoelectric and/or magnetostrictive phase is transferred to the other phase and eventually leads to a polarization and/or magnetization induced...
Book Chapter
Book cover for Strain Engineering in Functional Materials and Devices
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_003
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... along with the origin of spontaneous and piezoelectric polarization. The heterostructure of quantum well (QW) based AlGaN/InGaN LEDs is described along with the composition and functionality of each layer. Finally, the origin of the strain and how it impacts various performance parameters of III-nitride...
Book
Book cover for Strain Engineering in Functional Materials and Devices
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
Book Chapter
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425477_005
EISBN: 978-0-7354-2547-7
ISBN: 978-0-7354-2544-6
... took polarization into account, they often appeared to engage in linear causal reasoning: they recognized that the external charge polarized the insulator, but did not take into account that it would still cause a field at points inside the insulator. In the case of a point charge placed outside...
Book Chapter
Book cover for Strain Engineering in Functional Materials and Devices
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_002
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... ( Shi et al., 2019 ). In the discussion above, we considered the relative displacement of ions giving rise to polarization and therefore belong to displacive-type or phononic ferroelectrics. Ferroelectricity can also arise from other structural instabilities such as the antiferroelectric...