Search Results for PIN diode

... , H. , “ 27.5 kV 4H-SiC PiN diode with space-modulated JTE and carrier injection control ” ( 2018 ), see https://ieeexplore.ieee.org/document/8393686 (last accessed May 30, 2021 ). Neamen , D. , Semiconductor Physics and Devices Basic Principles Fourth Edition , 4th ed. ( McGraw-Hill...

... , H. , Hatakeyama , T. , Takei , M. , Yonezawa , Y. , Kimoto , T. , and Okumura , H. , “ 27.5 kV 4H-SiC PiN diode with space-modulated JTE and carrier injection control ” ( 2018 ), see https://ieeexplore.ieee.org/document/8393686 (last accessed May 30, 2021 ). Neamen...

.... When a sufficiently high density of defects has been created, the donors in the epitaxial layer are completely compensated and the Fermi level is pinned near a dominant intrinsic deep level. However, a significant increase in the reverse leakage current due to hopping conduction across shallow traps...

... switches (Basu et al., 2021a). Electromagnetic relays which operate by electromagnetic actuation are magnetic switches. PIN diodes, FETs, and hybrid circuits are examples of solid-state electrical switches (Basu et al., 2021a). RF MEMS Device Configurations RF MEMS switches are the basic...

... − 2 α L − 2 e − α L cos β L ) ( 1 + | τ | 4 e − 2 α L − 2 | τ | 2 e − α L cos β L ) where P_in = |a₁|². The through and drop port powers are plotted in Fig. 7.2(b) for under, over...

... temperatures. The diffusion length is sensitive to both the diffusion coefficient and time. Fermi-level pinning at the surface can lead to the formation of a surface dipole which results in surface segregation of dopant atoms. In general, diffusion-dominated growth leads to symmetric dopant profiles whereas...

... highly n-type material ( Murakami et al., 2014 ), as they would result in Fermi levels pinned at least 0.1 eV away from the CBM (neglecting other donor concentrations) even in the limit of Ga-rich material ( Alfieri et al., 2021 ). Overall, it is clear that a number...

... complex differential equations necessitated the use of the eigenvalue equation we call Schrödinger's equation [Eq. ( 1.2 )], (1.2) H ^ ψ = E ψ . FIG. 1.3 Standing waves are “pinned” to zero at the extremes and have discrete (integer) numbers of oscillating lobes, n = {1, 2, 3...

... Yang et al., Int. Commun. Heat Mass Transf. 87 , 118–124 (2017a). Copyright 2017 Elsevier. Liquid metal PCM heat sink enhancement To enhance the cooling capability of PCMs, Yang investigated and compared three types of fin structures, namely, plate, crossed, and pin fins, as shown in Figs...

....   , “ Unravelling additive-based nanocrystal pinning for high efficiency organic-inorganic halide perovskite light-emitting diodes ,” Nano Energy   42 , 157 – 165 ( 2017 ). 10.1016/j.nanoen.2017.10.012 Park , M.-H. , Kim , J. S. , Heo , J.-M. , Ahn , S. , Jeong , S.-H. , and Lee , T...

....   , “ Unravelling additive-based nanocrystal pinning for high efficiency organic-inorganic halide perovskite light-emitting diodes ,” Nano Energy   42 , 157 – 165 ( 2017 ). 10.1016/j.nanoen.2017.10.012 Park , M.-H. , Kim , J. S. , Heo , J.-M. , Ahn , S. , Jeong , S.-H. , and Lee , T...