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1-20 of 79 Search Results for
Mg doping
Images
in Dopants in β-Ga2O3: From Theory to Experiments
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 6.12 Formation energy diagram for Mg dopants in β-Ga2O3 shown for (a) Ga-rich (O-poor) and (b) O-rich (Ga-poor) conditions as adapted from Ritter et al., Appl. Phys. Lett. 113 (5), 052101 (2018). Copyright 2018 AIP Publishing LLC and Peelaers et al., APL Mater. 7 (2), 022519 (2019). Copyright 2019 AIP Publishing LLC. The figures also illustrate that moving the Fermi level away from the CBM with acceptor doping can also enhance the incorporation of donors such as deep donor IrGa impurities which were shown to be present in higher concentrations in Mg-doped single crystals ( Ritter et al., 2018 ). More about this image found in Formation energy diagram for Mg dopants in β-Ga2O3 sh...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_006
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
..., and Sn) from Hall measurements and admittance spectroscopy in β-Ga2O3. Acceptor doping (Mg, Fe) will also be discussed as a mean to form semi-insulating β-Ga2O3 material to serve as resistive buffer layers for lateral devices or current blocking layers...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
.... , and Akasaki , I. , “ P-type conduction in Mg-doped Ga0.91In0.09N grown by metalorganic vapor-phase epitaxy ,” Appl. Phys. Lett. 66 , 1112 – 1113 ( 1995 ). 10.1063/1.113829 Yu , P. Y. and Cardona , M. , “ Vibrational properties of semiconductors, and electron...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_010
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... the contact resistance of the Ti/Au metallization system. For this experiment β-Ga2O3 samples were used consisting of a 500 µm thick Mg-doped semi-insulating 〈100〉 β-Ga2O3 substrate on which a 200-nm thin Si-doped β-Ga2O3 layer...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... , H. , “ Mg acceptor doping in MOCVD (010) β-Ga2O3 ,” Appl. Phys. Lett. 117 , 222106 ( 2020a ). 10.1063/5.0031562 Feng , Z. , Bhuiyan , A. F. M. A. U. , Xia , Z. , Moore , W. , Chen , Z. , McGlone , J. F. , Daughton , D. R. , Arehart...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_003
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... by more than one order of magnitude (see Fig. 3.3 ). Deposit a thin buffer layer with compensating dopants. The effect of Si at the interface can also be managed by growing a few hundred nanometers thick buffer layer doped with deep acceptors such as Fe, Mg, or N to compensate the Si at the interface...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... , Kumagai , Y. , and Higashiwaki , M. , “ All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer ,” Appl. Phys. Express 11 ( 6 ), 064102 ( 2018 ). 10.7567/APEX.11.064102 Wong , M. H. , Goto , K. , Murakami , H...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... , “ Acceptor doping of β-Ga2O3 by Mg and N ion implantations ,” Appl. Phys. Lett. 113 ( 10 ), 102103 ( 2018 ). 10.1063/1.5050040 Wong , M. H. , Sasaki , K. , Kuramata , A. , Yamakoshi , S. , and Higashiwaki , M. , “ Anomalous Fe diffusion in Si-ion...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_001
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... to achieve resistive buffer layers in lateral devices that can prevent vertical current transport, or current blocking layers in vertical devices to confine current transport through the drift layer. For acceptor-doped β-Ga2O3 synthesis, Fe, Mg, and N have been the candidate impurity...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_003
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... , N. , Koike , M. , Manabe , K. , Tanaka , T. , Amano , H. , and Akasaki , I. , “ P-type conduction in Mg-doped Ga0.91In0.09N grown by metalorganic vapor-phase epitaxy ,” Appl. Phys. Lett. 66 , 1112 – 1113 ( 1995 ). 10.1063/1.113829 Yu , P. Y...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_008
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... implantation energy to penetrate a given depth, both leading to a more resistive implanted region. Based on the same termination design that consists of a 0.5-µm-thick resistive region doped at 2–3 × 1019 cm−3, Mg implant increases the Vbr from 0.5 kV to 1.5...
Book
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... , H. , “ Mg acceptor doping in MOCVD (010) β-Ga2O3 ,” Appl. Phys. Lett. 117 ( 22 ), 222106 ( 2020a ). 10.1063/5.0031562 Feng , Z. , Bhuiyan , A. F. M. A. U. , Xia , Z. , Moore , W. , Chen , Z. , McGlone , J. F. , “ Probing charge transport...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_004
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
..., and while not compromising the material quality of the film. Different stack structures and patterning of films with various levels and types of doping can be used to grow β-Ga2O3 devices. Group IV n-type dopants like Si, Ge, and Sn can be used as donors, while Fe, Mg, and N...
Book
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... thermal conductivity in single crystal β-gallium oxide ,” Appl. Phys. Lett. 106 ( 11 ), 111909 ( 2015 ). 10.1063/1.4916078 Handwerg , M. , Mitdank , R. , Galazka , Z. , and Fischer , S. F. , “ Temperature-dependent thermal conductivity in Mg-doped and undoped β...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_002
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... N-type conductivity is readily controllable with intentional shallow donors such as silicon, germanium, or tin. Both Mg and Fe are used to create compensating acceptors for obtaining semi-insulating β-Ga2O3 crystals. First-principles calculations of the β...
Book
Series: AIPP Books, Methods
Published: March 2023
10.1063/9780735425743
EISBN: 978-0-7354-2574-3
ISBN: 978-0-7354-2572-9
Book Chapter
Series: AIPP Books, Methods
Published: December 2022
10.1063/9780735425422_004
EISBN: 978-0-7354-2542-2
ISBN: 978-0-7354-2540-8
... of the exfoliated MoS2 nanosheet's (002) peak is considerably reduced. This suggests that the bulk material was peeled down to a few layers of MoS2. The intensity of the peak for 0.08 mg/ml concentration is very low, signifying that the exfoliated nanosheets are quite thin. As compared to bulk...
Book
Series: AIPP Books, Perspectives
Published: December 2022
10.1063/9780735422537
EISBN: 978-0-7354-2253-7
ISBN: 978-0-7354-2251-3
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