..., and all other industries reliant on semiconductors. Semiconductor device defects (Electronics) Metal-oxide-semiconductor (Society and organization) Semiconductors (Condensed matter physics) ...

..., and all other industries reliant on semiconductors. Semiconductor device defects (Electronics) Metal-oxide-semiconductor (Society and organization) Semiconductors (Condensed matter physics) About the Editors James S. Speck, Ph.D., is a Distinguished Professor and Seoul Viosys Chair in the Materials...

... of advancements in terms of the key sensing parameters as discussed earlier (which include sensitivity, detection limit, etc.), two of these platforms are promising, viz., cantilever-based MEMS gas sensors and metal oxide semiconductors (MOx) based MEMS gas sensors. The choice is further evident from the major...

... properties ,” Thin Solid Films   666 , 182 – 184 ( 2018 ). 10.1016/j.tsf.2018.09.006 Higashiwaki , M. , Sasaki , K. , Kuramata , A. , Masui , T. , and Yamakoshi , S. , “ Gallium oxide (Ga₂O₃) metal-semiconductor field-effect transistors on single-crystal β...

.... , and Hierlemann , A. , “ Magnetically actuated complementary metal oxide semiconductor resonant cantilever gas sensor systems ,” Anal. Chem.   77 ( 9 ), 2690 – 2699 ( 2005 ). 10.1021/ac048378t Vyas , A. , Staaf , H. , Rusu , C. , Ebefors , T. , Liljeholm , J. , Smith , A. D...

... oxide devices: Progress and outlook ,” Phys. Status Solidi RRL   15 ( 11 ), 2100357 ( 2021 ). 10.1002/pssr.202100357 Higashiwaki , M. , Sasaki , K. , Kuramata , A. , Masui , T. , and Yamakoshi , S. , “ Gallium oxide (Ga₂O₃) metal-semiconductor field...

... Higashiwaki , M. , Sasaki , K. , Kuramata , A. , Masui , T. , and Yamakoshi , S. , “ Gallium oxide (Ga₂O₃) metal-semiconductor field-effect transistors on single-crystal β-Ga₂O₃ (010) substrate ,” Appl. Phys. Lett.   100 , 013504 ( 2012...

... (100) is more widely used for manufacturing MEMS sensors; however, its variant Si (110) is sparingly used for MEMS manufacturing, whereas it is widely used for fabricating IC chips. For maximizing diaphragm resonance frequency, it has been found that ceramics are a preferable choice compared to metals...

... in the inverter, such as insulated-gate bipolar transistors (IGBTs) and metal–oxide–semiconductor field-effect transistors (MOSFETs), are among its most vulnerable components. Blaabjerg et al. (2006) conducted a review of PV inverter applications and reported that the failure rates of IGBTs and MOSFETs...

... are based on CMOS (complementary metal-oxide semiconductor) sensors that operate with low power requirements, which makes them ideal for mobile devices. This type of sensor does not capture an entire image at once but captures images in one scan mode, while the sensors do not “see” color and can be detected...

... by non-diffracting weber beams ,” J. Opt.   20 ( 12 ), 125401 ( 2018 ). 10.1088/2040-8986/aaea47 Liu , A. , Jones , R. , Liao , L. , Samara-Rubio , D. , Rubin , D. , Cohen , O.   et al. , “ A high-speed silicon optical modulator based on a metal-oxide-semiconductor...

... biosensors for healthcare, quality of food, and drug delivery applications. The integration of biomaterials into cost-effective, scalable, and robust OTFTs might contribute to the rise of organic bioelectronics as a feasible alternative to expensive and complex complementary metal oxide semiconductor (CMOS...

..., combined with plasmonic optoacoustic poration, were shown to record high-quality intracellular signals on high-density commercial complementary metal–oxide–semiconductor–MEAs ( Dipalo et al., 2018 ). Intracellular recording of action potentials on a large network scale has been also achieved using...