Search Results for Light emitting diodes

... voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates ,” IEEE Electron Device Lett.   27 , 713 – 715 ( 2006 ). 10.1109/LED.2006.881020 Dupuis , R. D. and Krames , M. R. , “ History, development, and applications of high-brightness visible light-emitting diodes ,” J...

... light-emitting diodes (LEDs) and high electron mobility transistors (HEMTs). While addressing the specific problems/challenges prevalent in a semiconductor, we first discuss several aspects of thin-film growth on a foreign substrate. We begin by looking at the atomistic nature of thin-film growth...

... on the properties of group IV elemental semiconductors such as Si, Ge, Si_(1-x)Ge_x, and Ge_(1-x)Sn_x. In the latter part of Chap. 3, nitride compound semiconductors and the relevant devices such as solid light-emitting diode (LEDs) and high electron mobility transistor (HEMT...

.... J. , and Li , X. , “ GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching ,” J. Appl. Phys.   114 ( 6 ), 064909 ( 2013 ). 10.1063/1.4817424 Ohira , S. and Arai , N. , “ Wet chemical etching behavior of β-Ga₂O₃...

... of Technology in 1985 and 1989, respectively. For over 25 years, his group has pioneered the research in wide bandgap nitride semiconductors including epitaxial growth, heterostructures, transport, and defect minimization to improve the efficiency of optoelectronic devices, such as UV and visible light emitting...

...Introduction We live in a mysterious world. Microwave ovens heat food in minutes, yet the interior of the oven remains cool to the touch. We have light emitting diodes, polarized screens, and mega-pixel displays in our pockets and on our watches. Our atmosphere contains spectral windows that let...

.... , Sie , S.-Y. , Chang , S.-P. , Wu , Y.-R. , Chiou , Y.-Z. , Kuo , C.-H. , and Sheu , J.-K. , “ AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrier ,” Appl. Phys. Lett.   117 ( 25 ), 251101 ( 2020 ). 10.1063/5.0026911 Wang...

... it a candidate for light-emitting diodes (LEDs) ( Huang et al., 2021 ) and solar cells ( Chua et al., 2019 ). Furthermore, Ga₂O₃ wide bandgap, high breakdown voltage and low leakage current make it suitable for power MOSFETs and power diodes. Additionally...

... conductivity because of immobile holes, as described in Sec. 1.4.2. This limits application of β-Ga₂O₃ in bipolar devices, such as p-n diodes, bipolar junction transistor (BJT), thyristors, CMOS, and optoelectronic devices, such as light-emitting diodes (LEDs). However, β...

.... , Pan , L. , Rogers , J. A. , Coleman , J. J. , and Li , X. , “ GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching ,” J. Appl. Phys.   114 ( 6 ), 064909 ( 2013 ). 10.1063/1.4817424 Ohira , S. and Arai , N. , “ Wet chemical...

....0c22737 Wang , T.-Y. , Lai , W.-C. , Sie , S.-Y. , Chang , S.-P. , Wu , Y.-R. , Chiou , Y.-Z. , Kuo , C.-H. , and Sheu , J.-K. , “ AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrier ,” Appl. Phys. Lett.   117 ( 25...

... bandgaps. As briefly noted above, DLOS overcomes this limitation since it is based on measuring the direct photoemission of trapped carriers being emitted to a band edge using a spectrally resolved sub-bandgap monochromatic light source over a suitable energy range. For example, by using light...

... with decreasing layer number and thickness. These provide a versatile platform for the 2D materials as intriguing candidates for potential applications such as nanoscale field-effect transistors, solar cell applications, bioimaging, electro/photocatalysis, sensors, light-emitting diodes, batteries...