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1-12 of 12 Search Results for
HAADF-STEM image simulation
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_005
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... column) at the position of the probe. Recent decades of STEM studies have demonstrated that the images formed with the electrons scattered at high angles (typically 100 mrad or larger), known as high-angle annular dark field (HAADF) images (which uses the annular detector shown in Fig. 5.7 ), can...
Images
in Defects in β-Ga2O3: Theory and Microscopic Studies
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 5.15 Planar defect found in the MOCVD grown β-(Al0.40Ga0.60)2O3 film running perpendicular to the (010) growth direction. (a) [001]m HAADF STEM image of the planar defect. (b) Defect region in (a) showing adjacent ic site intensities (green dashed circle), completely vacant Ga1 site columns (V), and Ga2 intensities (blue circles) that have relaxed to form the stable structure. (c) Modeled defect structure visualized from the β-phase indicating the complete loss of Ga1 site intensity (V), ic atomic position (green dashed circle), original Ga2 site (blue dashed circle), and their relaxation (orange arrow) to a new location (blue solid circle). (d) γ-phase Al2O3 structure oriented along the [110] direction. (e) [110] γ-phase cells from (d) positioned with the octahedrally coordinated atomic column located at the ic, overlaid on the β-phase visualized defect model from (c), producing the observed planar defect. (f) Quantitative STEM analysis of the Ga sites above and below the defect interface as a function of distance in unit cells [1–3 labeled in (a)]. Experimental intensities are directly compared to the 18.5 nm thick β-(AlxGa1-x)2O3 simulation. The average film site concentrations from the β-(Al0.40Ga0.60)2O3 film are marked on the plot. Reproduced with permission from Johnson et al., APL Mater. 9 (5), 051103 (2021). Copyright 2021 AIP Publishing LLC. More about this image found in Planar defect found in the MOCVD grown β-(Al0.40Ga0.60...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_005
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... the interface. Local strains at the interface between the BHO nanorod and GdBCO matrix were analyzed quantitatively according to the STEM-HAADF observation and GPA analysis in the reference ( Maeda et al., 2017 ). An effective route has been reported to enhance the pinning force by generating highly...
Book
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
Book
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
Book
Series: AIPP Books, Principles
Published: October 2021
10.1063/9780735423114
EISBN: 978-0-7354-2311-4
ISBN: 978-0-7354-2308-4
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_004
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
...) z contrast Mg segregation pyramidal inversion domain (PID) HAADF-STEM image simulation metalorganic vapor phase epitaxy (MOVPE) Mg-ion implantation ultra-high pressure annealing (UHPA) interstitial-type extended defects vacancy-type extended defects migration energy of point defects energy...
Images
in Structural Defects in Mg-Doped GaN: TEM Analysis
> Characterization of Defects and Deep Levels for GaN Power Devices
Published: December 2020
FIG. 4.14 (a) HAADF-STEM image of boundary of oblong defect. Dashed lines show Ga atomic plane position in GaN matrix. (b) Schematic of Ga atomic positions in GaN matrix (right) and in Mg segregated ID boundary (left). Inset in (a) shows simulated image of model in which atomic structures in (b) are stacked in projection direction. Schematic in (a) shows atomic positions of Ga and Mg in model used in image simulation. Reproduced with permission from K. Iwata et al., J. Appl. Phys. 127 (10), 105106 (2020). Copyright 2020 AIP Publishing. More about this image found in (a) HAADF-STEM image of boundary of oblong defect. Dashed lines show Ga ato...
Images
in Structural Defects in Mg-Doped GaN: TEM Analysis
> Characterization of Defects and Deep Levels for GaN Power Devices
Published: December 2020
FIG. 4.17 (a) HAADF-STEM image of bright dot defect in sample #2. Numbers of Ga atomic column images are doubled in each Ga plane in defect. (b) Schematic of vacancy disk on a-plane viewed edge-on (left). Atoms on both sides of vacancy disk move by 1 6 [ 11 2 ¯ 0 ] to form dislocation loop (right). 1 6 [ 11 2 ¯ 0 ] movement of atoms results in 1 6 [ 11 2 ¯ 0 ] movement of a-planes around dislocation loop. Inset in (a) shows simulated image of model in which matrix and 1 6 [ 11 2 ¯ 0 ] -shifted structure in (b) are stacked in projection direction. Schematic in (b) shows atomic positions of Ga in model used in image simulation. Reproduced with permission from K. Iwata et al., J. Appl. Phys. 127 (10), 105106 (2020). Copyright 2020 AIP Publishing. More about this image found in (a) HAADF-STEM image of bright dot defect in sample #2. Numbers of Ga atomi...
Images
in Structural Defects in Mg-Doped GaN: TEM Analysis
> Characterization of Defects and Deep Levels for GaN Power Devices
Published: December 2020
FIG. 4.12 (a) HAADF-STEM image of bright dot defect in sample #1. Incident beam direction is parallel to 11 2 ¯ 0 . Arrow indicates extra Ga plane. (b) Close-up of extra Ga plane in (a). Horizontal dashed lines show Ga atomic plane positions in GaN matrix. (c) Schematic of Ga atomic positions in GaN matrix (right) and in defect region with interstitial layer (left). GaN (0001) plane stacking registries are indicated as a, b, and c. (d) Image-intensity profile along vertical dashed line in (b). Peak indicated as “am” shows intensity of bright dot in Ga atomic plane with a stacking registry in matrix just above extra Ga plane. Distance between peak am and neighboring peak, i.e., distance between closely spaced bright dots, is 0.13 nm. Position of extra Ga plane is indicated as “c” on diagram. Inset in (b) shows simulated image of model in which atomic structures in (c) are stacked in projection direction. Schematic in (b) shows Ga atomic positions in model used in image simulation. Modified with permission from K. Iwata et al., J. Appl. Phys. 127 (10), 105106 (2020). Copyright 2020 AIP Publishing. More about this image found in (a) HAADF-STEM image of bright dot defect in sample #1. Incident beam direc...
Book
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_005
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... grown along polar and semi-polar directions. FIG. 5.11 (a) High-resolution high-angle annular dark-field (HAADF)-STEM image of InGaN/GaN MQWs with high-magnification image in (b). The In atomic maps showing three QWs and corresponding In compositions are shown in (c) and (d), respectively...