Search Results for Electronic band structure

...) are discussed. Followed by the semiconducting chapter, Chap. 4 discusses a fundamentally exciting material like VO₂ that exhibits metal-insulator-transition. While the strain effect on electronic band structure and semiconductor devices triggered the research in this direction, the emergence...

... ) ∗ ( a b c ) R . FIG. 4.1 (a) Schematic illustration of unit cell of monoclinic phase (M1) and rutile phase (R) ( Goodenough, 1971 ) and (b) illustration of the electronic band structure of the M1 phase and R phase ( Lee et al., 2020 ). Temperature-controlled measurements were...

... and poor strain-dependent properties are observed implying a limited phase space for electrons to delocalize, resulting in stronger electron correlations. Let us take the case study of the electronic band structure of bulk LVO and strained thin films. For the time being, we will reserve our discussion...

... the energy bands in opposite directions. The change in the splitting changes the interaction between heavy and light holes, thus changing the effective hole mass ( m h ∗ ) and shape of the valence band structure. However, the strain has a negligible effect on the effective mass of electrons...

... Argonne National Laboratory , 2007 ), p. 26 . Feng , Y. P. , Teo , K. L. , Li , M. F. , Poon , H. C. , Ong , C. K. , and Xia , J. B. , “ Empirical pseudopotential band-structure calculation for Zn_1−xCd_xS_ySe_1−y quaternary alloy...

... ). Semiconductors Semiconductors are the foundation of modern electronics. Semiconducting materials exist in two types: elemental materials and compound materials ( Neamen and Pevzner, 2003 ; and Kongsat et al., 2021 ). Nanotubes: They are a nanoscale take a structure shape of tube. Their features...

...References References Akhade , S. A. and Kitchin , J. R. , “ Effects of strain, d-band filling, and oxidation state on the surface electronic structure and reactivity of 3d perovskite surfaces ,” J. Chem. Phys.   137 , 084703 ( 2012 ). 10.1063/1.4746117 Angel , R. J...

... evolution in GaN grown by metalorganic chemical vapor deposition ,” Jpn. J. Appl. Phys.   37 , 4460 – 4466 ( 1998 ). 10.1143/JJAP.37.4460 Fischetti , M. V. and Laux , S. E. , “ Band structure, deformation potentials, and carrier mobility in strained Si Ge, and SiGe alloys ,” J. Appl...

... , S. , and Gurbuz , Y. , “ CMOS SPDT T/R switch for X-band, on-chip radar applications ,” Electron. Lett.   46 ( 20 ), 1382 – 1384 ( 2010 ). 10.1049/el.2010.2165 Dushman , S. , Scientific Foundations of Vacuum Technique ( Wiley , 1962 ). Goldsmith , C. , Randall , J...

... the semiconductor industry even today due to the material's abundance, well-characterized electronic structure and properties, precise control over their composition and ability to grow high pure crystals. However, silicon needs to be replaced with new materials as it is fast approaching its fundamental limit...

...) or by electronic means. RF MEMS switches utilize the mechanical movement of a MEMS structure to turn on or off a device and thereby the circuit connected to the device. Mechanical movement of the structure can be achieved through electrostatic, electromagnetic, thermal or piezoelectric mechanisms. Based...

...High-resolution transmission electron microscopy High-resolution transmission electron microscopy (HRTEM) [Fig. 5.1(a) ] has been used for many decades to characterize the atomic-scale structure of materials. A nearly parallel electron beam is used to illuminate a specimen, and the image formed...

... as the electron-hole pair. Generally, the energy required to free an electron from the valence band of a silicon atom (i.e., band gap) is about 1.12 eV. The electric field swept the free electron across the depletion p region and electrons accumulated in the n region creating a negative charge...

... temperatures (150–400 °C). The reason for the adsorption of oxygen apart from elevated temperature can be the presence of dangling bonds at the abrupt edge of the MO_x surface. The adsorbed oxygen extracts the free electrons from the conduction band at the surface of MO_x and forms ions...

... become a vital tool for major semiconductor research. The first step in the calculation is to find the band structure and the phonon dispersion by taking advantage of the density functional theory (DFT) and the density functional perturbation theory (DFPT), which basically provide an easier alternative...

... of RCo₂ compounds and alloys from energy band structure ,” J. Phys.: Condens. Matter.   3 , 8911 – 8916 ( 1991 ). 10.1088/0953-8984/3/45/013 Hristoforou , E. , Neagu , M. , and Chiriac , H. , “ New self excited accelerometer based on magnetostrictive delay lines ,” IEEE Trans. Magn...