Tetsuo Narita, Ph.D., joined Toyota Central R&D Labs in 2007 and Nagoya University, Nagoya, Japan as a Visiting Associate Professor in 2017. Dr. Narita specializes in the growth of III-nitride semiconductors, focusing on the use of metalorganic vapor phase epitaxy (MOVPE). He has published numerous peer-reviewed journal articles on semiconductor growth and analysis and served as Project Vice-Manager for the Consortium for GaN Research and Applications, Working Group on Crystal Growth. Editor.

Tetsu Kachi, Ph.D., became a Professor at Nagoya University, Nagoya, Japan in 2016 after retiring from a 40-year career at Toyota Central R&D Labs, Inc., where he aided in the growth and development of GaNand GaAs-based devices. He currently leads the MEXT GaN R&D project of the Japanese national program. Dr. Kachi authored dozens of articles in peer-reviewed journals, including “A vertical insulated gate AlGaN/GaN heterojunction fi eld-effect transistor,” which was recognized as a Best Paper by the Japanese Journal of Applied Physics (IOP Publishing, Japan). Editor.