Front Matter

Published:2021
Sujaul Chowdhury, Chowdhury Shadman Awsaf, Ponkog Kumar Das, "Front Matter", Magnetic Field Effects on Quantum Wells, Sujaul Chowdhury, Chowdhury Shadman Awsaf, Ponkog Kumar Das
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This book is an analysis of a semiconductor nanostructure called isolated GaAsAlGaAs quantum well (QW). It details the connectivity between quantum mechanics and semiconductor physics and is the first comprehensive book on this topic. It provides a detailed analysis of the application of quantum mechanics of semiconductor nanostructures and electron transport under the influence of magnetic field. Electronics, lasers, atomic clocks, and magnetic resonance scanners all fundamentally depend on our understanding of the quantum nature of light and matter explored in this book.
Magnetic Field Effects on Quantum Wells is a highly technical treatment featuring:
Calculated parametric variations of transmission coefficient of the QW in nontunneling regime in absence and in presence of magnetic field applied perpendicular to GaAsAlGaAs interfaces
Explanations of magnetic field dependence of the parametric var iations in a quantitatively exact manner
Presentations of background material on microelectronics, nanostructure physics, and classical mechanics
This is an invaluable resource for researchers, scientists, industry professionals, faculty, and graduate students working with quantum mechanics. It is an excellent text for postgraduates conducting research in semiconductor and condensed matter.
Preface
This book, Magnetic Field Effects on Quantum Wells, is an indepth analysis of the topic and the first of its kind.
The scope and intended focus of the book are as follows:
The book covers the physics of a semiconductor nanostructure.
The book contains a comprehensive theoretical account of the topic.
The book is aimed at providing academics and scientists complete information on the physics of a nontunneling regime of a semiconductor nanostructure in a magnetic field.
This is the first comprehensive account of the topic.
The book deals with a semiconductor nanostructure called an isolated GaAs–AlGaAs quantum well (QW). The parametric variations of the transmission coefficient of the QW in a nontunneling regime are calculated in the absence and presence of a magnetic field applied perpendicular to the GaAs–AlGaAs interfaces. Both analytical and numerical investigations are reported. The magnetic field dependence of the parametric variations is explained in a quantitatively exact manner. The book also contains a comprehensive theoretical account of the topic. Background information about microelectronics, nanostructure physics, and classical mechanics is also covered to enable readers to understand the book.
Unique features of this book include:
Complete calculations
Analytical and numerical accounts
Magnetic field effects brought out and explained in a quantitatively exact manner
A comprehensive theoretical account of the topic
Benefits of this book for the reader include:
Backgrounds on microelectronics, nanostructure physics, and classical mechanics
Complete acquaintance with the physics of the topic
Audiences of the book are graduate students and academics of physics and electrical and electronic engineering.
The organization of chapters is as follows. After a necessary introduction to the backgrounds of microelectronics and nanostructure physics in the first two chapters, Chap. 3 solves the 1D problem in zero magnetic field and reveals the analytical expression for the transmission coefficient. In Chap. 4, the classical Hamiltonian function of a charged particle in an electric and a magnetic field is calculated, which is used in Chap. 5 to obtain the corresponding Hamiltonian operator. In Chap. 5, the problem is resolved by reducing the 3D problem to a 1D problem. In Chap. 6, the analytical expression of the magneticfielddependent transmission coefficient is obtained. Chapter 7 carries out numerical investigations to reveal the effects of the magnetic field on the transmission coefficient. We find that a larger magnetic field reduces the effective depth of the quantum well.