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Ultrawide Bandgap β-Ga2O3 Semiconductor: Theory and Applications
Edited by
James S. Speck;
James S. Speck
Materials Department,
University of California
, Santa Barbara, Santa Barbara, California 93106, USA
Search for other works by this author on:
Esmat Farzana
Esmat Farzana
Materials Department,
University of California
, Santa Barbara, Santa Barbara, California 93106, USA
Search for other works by this author on:
AIP Publishing LLC
ISBN electronic:
978-0-7354-2503-3
ISBN print:
978-0-7354-2500-2
Publication date:
2023
Ultrawide Bandgap β-Ga2O3 Semiconductor: Theory and Applications
Edited by: James S. Speck, Esmat Farzana
https://doi.org/10.1063/9780735425033
ISBN (print): 978-0-7354-2500-2
ISBN (electronic): 978-0-7354-2503-3
Publisher: AIP Publishing LLC
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Table of Contents
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Front MatterByJames S. Speck;James S. SpeckMaterials Department,University of California, Santa Barbara, Santa Barbara, California 93106,USASearch for other works by this author on:Esmat FarzanaEsmat FarzanaMaterials Department,University of California, Santa Barbara, Santa Barbara, California 93106,USASearch for other works by this author on:
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Chapter 1: IntroductionByEsmat Farzana;Esmat FarzanaMaterials Department,University of California, Santa Barbara, California 93106,USASearch for other works by this author on:James S. SpeckJames S. SpeckMaterials Department,University of California, Santa Barbara, California 93106,USASearch for other works by this author on:
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Chapter 2: β-Ga2O3 Bulk Growth TechniquesByJ. D. Blevins;J. D. BlevinsPrincipal Materials Engineer,Air Force Research Laboratory Materials and Manufacturing Directorate, AFRL/RXME, 2977 Hobson Way, Wright-Patterson AFB, Ohio 45433,USASearch for other works by this author on:Darren ThomsonDarren ThomsonSenior Materials Research Engineer,Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Bldg. 600, Wright-Patterson AFB, Ohio 45433Search for other works by this author on:
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Chapter 3: MOCVD Growth of β-Ga2O3 EpitaxyByFikadu Alema;Fikadu AlemaAgnitron Technology Inc., 8360 Commerce Dr, Chanhassen, Minnesota 55317Search for other works by this author on:George Seryogin;George SeryoginAgnitron Technology Inc., 8360 Commerce Dr, Chanhassen, Minnesota 55317Search for other works by this author on:Andrei OsinskyAndrei OsinskyAgnitron Technology Inc., 8360 Commerce Dr, Chanhassen, Minnesota 55317Search for other works by this author on:
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Chapter 4: Molecular Beam Epitaxy of Ga2O3ByAkhil Mauze;Akhil MauzeMaterials Department,University of California, Santa Barbara, Santa Barbara, California 93106,USASearch for other works by this author on:James S. SpeckJames S. SpeckMaterials Department,University of California, Santa Barbara, Santa Barbara, California 93106,USASearch for other works by this author on:
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Chapter 5: Defects in β-Ga2O3: Theory and Microscopic StudiesByMengen Wang;Mengen WangMaterials Department,University of California, Santa Barbara, Santa Barbara, California 93106,USASearch for other works by this author on:Sai Mu;Sai MuMaterials Department,University of California, Santa Barbara, Santa Barbara, California 93106,USADepartment of Physics and Astronomy,University of South Carolina, Columbia, South Carolina 29208,USASearch for other works by this author on:Joel B. Varley;Joel B. VarleyMaterials Science Division,Lawrence Livermore National Laboratory, Livermore, California 94551,USASearch for other works by this author on:Jinwoo Hwang;Jinwoo HwangDepartment of Materials Science and Engineering,The Ohio State University, Columbus, Ohio 43210,USASearch for other works by this author on:Chris G. Van de WalleChris G. Van de WalleMaterials Department,University of California, Santa Barbara, Santa Barbara, California 93106,USASearch for other works by this author on:
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Chapter 6: Dopants in β-Ga2O3: From Theory to ExperimentsByJoel B. Varley;Joel B. VarleyMaterials Science Division,Lawrence Livermore National Laboratory, Livermore, California 94551,USASearch for other works by this author on:Chris G. Van de Walle;Chris G. Van de WalleMaterials Department, University of California, Santa Barbara, Santa Barbara, California 93106,USASearch for other works by this author on:Esmat FarzanaEsmat FarzanaMaterials Department, University of California, Santa Barbara, Santa Barbara, California 93106,USASearch for other works by this author on:
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Chapter 7: Electron Transport in β-Ga2O3 from First-PrinciplesByAvinash Kumar;Avinash KumarDepartment of Electrical Engineering,University at Buffalo, Buffalo, New York 14260,USASearch for other works by this author on:Krishnendu Ghosh;Krishnendu GhoshDepartment of Electrical Engineering,University at Buffalo, Buffalo, New York 14260,USASearch for other works by this author on:Uttam SingisettiUttam SingisettiDepartment of Electrical Engineering,University at Buffalo, Buffalo, New York 14260,USASearch for other works by this author on:
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Chapter 8: High Breakdown Voltage β-Ga2O3 Schottky DiodesByMan Hoi WongMan Hoi WongDepartment of Electronic and Computer Engineering,Hong Kong University of Science and Technology, Clear Water Bay, Hong KongSearch for other works by this author on:
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Chapter 9: Etching of β-Ga2O3ByHsien-Chih Huang;Hsien-Chih HuangDepartment of Electrical and Computer Engineering, Holonyak Micro and Nanotechnology Laboratory,University of Illinois, Urbana, Illinois 61801Search for other works by this author on:Xiuling LiXiuling LiDepartment of Electrical and Computer Engineering,The University of Texas at Austin, Austin, Texas 78712Search for other works by this author on:
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Chapter 10: Lateral Transistors on β-Ga2O3: Overview on Design, Technology, and CharacterizationByKornelius Tetzner;Kornelius TetznerFerdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin,GermanySearch for other works by this author on:Oliver Hilt;Oliver HiltFerdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin,GermanySearch for other works by this author on:Joachim WürflJoachim WürflFerdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin,GermanySearch for other works by this author on:
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Chapter 11: Delta-Doped Transistors with β-Ga2O3ByPraneeth Ranga;Praneeth RangaDepartment of Electrical and Computer Engineering,The University of Utah, Salt Lake City, Utah 84112,USASearch for other works by this author on:Arkka Bhattacharyya;Arkka BhattacharyyaMaterials Department,University of California, Santa Barbara, Santa Barbara, California 93106,USASearch for other works by this author on:Sriram KrishnamoorthySriram KrishnamoorthyMaterials Department,University of California, Santa Barbara, Santa Barbara, California 93106,USASearch for other works by this author on:
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Chapter 12: Radiation Effects on β-Ga2O3 Materials and DevicesByHemant J. Ghadi;Hemant J. GhadiDepartment of Electrical and Computer Engineering,The Ohio State University, Columbus, Ohio 43210Search for other works by this author on:Joe F. McGlone;Joe F. McGloneDepartment of Electrical and Computer Engineering,The Ohio State University, Columbus, Ohio 43210Search for other works by this author on:Esmat Farzana;Esmat FarzanaMaterials Department,University of California, Santa Barbara, Santa Barbara, California 93106,USASearch for other works by this author on:Aaron R. Arehart;Aaron R. ArehartDepartment of Electrical and Computer Engineering,The Ohio State University, Columbus, Ohio 43210Search for other works by this author on:Steven A. RingelSteven A. RingelDepartment of Electrical and Computer Engineering,The Ohio State University, Columbus, Ohio 43210Search for other works by this author on:
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Chapter 13: Future Prospect of β-Ga2O3: Materials, Devices and Circuit ApplicationsByAndrea Arias-Purdue;Andrea Arias-PurdueTeledyne Scientific Company, Thousand Oaks, California 91360,USASearch for other works by this author on:Vivek Mehrotra;Vivek MehrotraTeledyne Scientific Company, Thousand Oaks, California 91360,USASearch for other works by this author on:Charles Neft;Charles NeftTeledyne Scientific Company, Thousand Oaks, California 91360,USASearch for other works by this author on:Kelson D. Chabak;Kelson D. ChabakAir Force Research Laboratory, Wright-Patterson AFB, Ohio 45433,USASearch for other works by this author on:Andrew J. Green;Andrew J. GreenAir Force Research Laboratory, Wright-Patterson AFB, Ohio 45433,USASearch for other works by this author on:Kyle J. Liddy;Kyle J. LiddyAir Force Research Laboratory, Wright-Patterson AFB, Ohio 45433,USASearch for other works by this author on:Keisuke Shinohara;Keisuke ShinoharaTeledyne Scientific Company, Thousand Oaks, California 91360,USASearch for other works by this author on:Miguel E. UrteagaMiguel E. UrteagaTeledyne Scientific Company, Thousand Oaks, California 91360,USASearch for other works by this author on:
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IndexByJames S. Speck;James S. SpeckMaterials Department,University of California, Santa Barbara, Santa Barbara, California 93106,USASearch for other works by this author on:Esmat FarzanaEsmat FarzanaMaterials Department,University of California, Santa Barbara, Santa Barbara, California 93106,USASearch for other works by this author on: