Bismuth telluride (Bi2Te3) was analyzed using x-ray photoelectron spectroscopy. A freshly exfoliated, oxygen-free flake was analyzed. Spectral regions for O 1s, Te 3d, C 1s, Bi 4f, Bi 5d, and Te 4d were acquired. Bulk quantitative analyses by x-ray fluorescence, inductively coupled plasma-mass spectrometry, and x-ray diffraction indicated that the material was stoichiometric, contained low concentrations of impurities, and was phase pure, respectively.

  • Accession #: 01551

  • Technique: XPS

  • Host Material: Bi2Te3

  • Instrument: Physical Electronics VersaProbe II

  • Major Elements in Spectra: Bi, Te, C

  • Minor Elements in Spectra: None detected

  • Published Spectra: 8

  • Spectra in Electronic Record: 8

  • Spectral Category: Comparison

Transition metal dichalcogenides are a potentially important class of materials owning to their unique physical, electronic, and optical properties. Bismuth telluride is a topological insulator exhibiting different surface and bulk conduction properties making them promising materials for future electronic devices (Refs. 1–4).

Host Material: Bi2Te3 polycrystalline

CAS Registry #: 1304-82-1

Host Material Characteristics: Homogeneous; solid; polycrystalline; topological insulator; other

Chemical Name: Bismuth telluride

Source: Alfa Aesar

Host Composition: Bi2Te3

Form: Polycrystalline solid

Structure: Hexagonal

History and Significance: Fresh layers were mechanically exfoliated using 3M™ double-sided adhesive tape. The tape with Bi2Te3 flakes was then placed on Si (100) and immediately introduced to the vacuum system. A total of six flakes were analyzed. The one with the lowest O% and C% is presented here. Carbon was present at ∼14%; oxygen was not detected. The Te:Bi ratio and peak positions and shapes were consistent among the multiple measurements with the exception of minor evidence of oxidation on selected flake (data not included). A separate flake was chosen for the wide scan analyses (includes valence band). These experiments were repeated using a different XPS instrument (UTD) and both ex situ and in situ exfoliation. Peak positions and shapes were identical to these within <0.1 eV in all cases. In situ exfoliation resulted in lower levels of atmospheric contaminants (O and C).

As Received Condition: Flaky multilayered solid

Analyzed Region: Exfoliated flake of host

Ex Situ Preparation/Mounting: Double-sided adhesive tape pull

In Situ Preparation: See comment in History

Charge Control: Low energy electron flood and low energy Ar+ flood

Temp. During Analysis: 300 K

Pressure During Analysis: 1 × 10−6 Pa

Preanalysis Beam Exposure: 60 s

Manufacturer and Model: Physical Electronics VersaProbe II

Analyzer Type: Spherical sector

Detector: Channeltron

Number of Detector Elements: 8

Analyzer Mode: Constant pass energy

Throughput (T = EN): N = 0

Excitation Source Window: None

Excitation Source: Al Kα monochromatic

Source Energy: 1486.6 eV

Source Strength: 51.5 W

Source Beam Size: 200 × 200 μm2

Signal Mode: Multichannel direct

Incident Angle:

Source-to-Analyzer Angle: 45°

Emission Angle: 45°

Specimen Azimuthal Angle:

Acceptance Angle from Analyzer Axis:

Analyzer Angular Acceptance Width: 20° × 20°

Manufacturer and Model: Physical Electronics

Energy: 2000 eV

Current: 0.001 mA

Current Measurement Method: Faraday cup

Sputtering Species: Ar+

Spot Size (unrastered): 500 μm

Raster Size: 2000 × 2000 μm2

Incident Angle: 45°

Polar Angle: 45°

Azimuthal Angle: 45°

Comment: Monotonic argon sputtering was performed with a differentially pumped ion gun for the calibration spectra only.

Energy Scale Correction: The binding energy scale was referenced to Te 3d5/2 = 572.0 eV (Ref. 1).

Recommended Energy Scale Shift: +2.125 eV

Peak Shape and Background Method: Iterated Shirley background subtraction used on Bi 4f and Te 4d for quantification.

Quantitation Method: Quantification was done using Scofield-inelastic mean free path corrected relative sensitivity factor from casaxps version 2.3.19rev1.0k.

This study is based upon research conducted at The Pennsylvania State University Two-Dimensional Crystal Consortium—Materials Innovation Platform (2DCC-MIP) which is supported by NSF cooperative agreement No. DMR-1539916.

1.
H.
Bando
,
K.
Koizumi
,
Y.
Oikawa
,
K.
Daikohara
,
A.
Kulbachinskii
, and
H.
Ozaki
,
J. Phys. Condens. Matter
12
,
5607
(
2000
).
2.
L. V.
Yashina
 et al,
ACS Nano
7
,
5181
(
2013
).
3.
C. R.
Thomas
,
M. K.
Vallon
,
M. G.
Frith
,
H.
Sezen
,
S. K.
Kushwaha
,
R. J.
Cava
,
J.
Schwartz
, and
S. L.
Bernasek
,
Chem Mater.
28
,
35
(
2016
).
4.
M. R.
Thuler
,
R. L.
Benbow
, and
Z.
Hurych
,
Chem. Phys.
71
,
265
(
1982
).

Supplementary Material