XPS was performed on UHV O2 annealed and Ar-ion sputtered UO2(111) single crystal surfaces. Ar-ion sputtering for 1 h decreased the XPS O 1s/U 4f corrected total peak areas ratio from 2.11 to 1.19. A shoulder at ∼377.4 eV attributed to Ux atoms (x close to zero) is also observed. Annealing the UO2(111) at 873 K for at least 1 h in the presence of 1E−4 Pa of molecular oxygen was required for restoring the oxygen defects created by Ar-ion bombardment.
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