Hafnium oxide (HfO2) grown by atomic layer deposition on Si was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of HfO2 obtained using monochromatic Cr Kα radiation at 5414.8 eV include two survey scans (Al Kα and Cr Kα) and high-resolution spectra of Hf 3s, Hf 3p3/2, Hf 3d5/2, Hf 4p3/2, Hf 4d, Hf 4f, Hf 4s, and O 1s.

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