Silicon nitride (Si3N4) grown by metalorganic chemical vapor deposition on Si was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of Si3N4 obtained using monochromatic Ga Kα radiation at 9252.13 eV include a survey scan and high-resolution spectra of Si 1s, Si 2p, N 1s, and O 1s.
High-energy x-ray photoelectron spectroscopy on Si3N4 with Ga Kα photons
Note: This paper is part of the 2022 Special Topic Collection on Higher Energy X-ray Photoelectron Spectroscopy.
Fiona Crystal Mascarenhas, Ilse Hoflijk, Anja Vanleenhove, Inge Vaesen, Charlotte Zborowski, Thierry Conard; High-energy x-ray photoelectron spectroscopy on Si3N4 with Ga Kα photons. Surf. Sci. Spectra 1 June 2022; 29 (1): 014015. https://doi.org/10.1116/6.0001522
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