Silicon oxide (SiO2) grown by rapid thermal oxidation on Si was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of SiO2 obtained using monochromatic Cr Kα radiation at 5414.8 eV include two survey scans (Al Kα and Cr Kα) and high-resolution spectra of Si 2p, Si 2s, Si 1s, and O 1s.
High-energy x-ray photoelectron spectroscopy spectra of SiO2 measured by Cr Kα
Note: This paper is part of the 2022 Special Topic Collection on Higher Energy X-ray Photoelectron Spectroscopy.
Anja Vanleenhove, Ilse Hoflijk, Inge Vaesen, Charlotte Zborowski, Kateryna Artyushkova, Thierry Conard; High-energy x-ray photoelectron spectroscopy spectra of SiO2 measured by Cr Kα. Surf. Sci. Spectra 1 June 2022; 29 (1): 014014. https://doi.org/10.1116/6.0001526
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