Silicon nitride (Si3N4) grown by metalorganic chemical vapor deposition on Si was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of Si3N4 obtained using monochromatic Cr Kα radiation at 5414.8 eV include two survey scans (Al Kα and Cr Kα) and high-resolution spectra of Si 2p, Si 2s, Si 1s, and N 1s.
High energy x-ray photoelectron spectroscopy spectra of Si3N4 measured by Cr Kα
Note: This paper is part of the 2022 Special Topic Collection on Higher Energy X-ray Photoelectron Spectroscopy.
I. Hoflijk, A. Vanleenhove, I. Vaesen, C. Zborowski, K. Artyushkova, T. Conard; High energy x-ray photoelectron spectroscopy spectra of Si3N4 measured by Cr Kα. Surf. Sci. Spectra 1 June 2022; 29 (1): 014013. https://doi.org/10.1116/6.0001524
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