Silicon nitride (Si3N4) grown by metalorganic chemical vapor deposition on Si was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of Si3N4 obtained using monochromatic Cr Kα radiation at 5414.8 eV include two survey scans (Al Kα and Cr Kα) and high-resolution spectra of Si 2p, Si 2s, Si 1s, and N 1s.
REFERENCES
1.
See https://www.ulvac-phi.com/en/products/xps/quantes/ for ULVAC-PHI Quantes.
2.
See https://www.kratos.com/products/axis-supra-xps-surface-analysis-instrument for Kratos Axis Supra+.
3.
See https://scientaomicron.com/en/system-solutions/electron-spectroscopy/HAXPES-Lab for Scienta Omicron HAXPES lab.
4.
See supplementary material at https://doi.org/10.1116/6.0001524 for the figures.
© 2022 Author(s). Published under an exclusive license by the AVS.
2022
Author(s)
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