Silicon oxide (SiO2) grown by rapid thermal oxidation (RTO) was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of SiO2 obtained using monochromatic Ga Kα radiation at 9252.13 eV include a survey scan and high-resolution spectra of Si 1s, Si 2p, O 1s, and C 1s.
HAXPES on SiO2 with Ga Kα photons
Note: This paper is part of the 2022 Special Topic Collection on Higher Energy X-ray Photoelectron Spectroscopy.
Anja Vanleenhove, Fiona Crystal Mascarenhas, Ilse Hoflijk, Inge Vaesen, Charlotte Zborowski, Thierry Conard; HAXPES on SiO2 with Ga Kα photons. Surf. Sci. Spectra 1 June 2022; 29 (1): 014012. https://doi.org/10.1116/6.0001523
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