Infrared to ultraviolet range ellipsometric spectra of thin film silicon nitride (SiNx) collected from rotating compensator instruments have been analyzed simultaneously. A common complex dielectric function (ε = ε1 + iε2) parameterization from 0.08 to 5.89 eV for amorphous 490 Å thick low pressure chemical vapor deposition SiNx, nominally x = 1.33 Si3N4, on a single crystal silicon (c-Si) wafer is determined. Visible to ultraviolet range electronic transitions at high photon energies and infrared active vibrational modes at low energies are identified.
Skip Nav Destination
Research Article| July 01 2016
LPCVD SiNx thin film on c-Si wafer by spectroscopic ellipsometry
Laxmi Karki Gautam;
Nikolas J. Podraza
Laxmi Karki Gautam, Ligang Ye, Nikolas J. Podraza; LPCVD SiNx thin film on c-Si wafer by spectroscopic ellipsometry. Surf. Sci. Spectra 1 June 2016; 23 (1): 51–54. https://doi.org/10.1116/1.4954192
Download citation file: