Filament-assisted chemical vapor deposition (CVD) diamond film growth on Si(100) was studied using x-ray photoelectron spectroscopy (XPS) in a system that couples a growth chamber to an ultrahigh vacuum analytical chamber. Diamond nucleates and grows on a SiC layer formed on the Si(100) substrate [D. N. Belton and S. J. Schmieg, Appl. Phys. Lett. 54, 416 (1989)]. After about 17 h growth XPS showed no Si signal from the substrate, no detectable contaminants, and only carbon present in survey scans. Electron energy loss spectroscopy (EELS) spectra obtained by x-ray excitation of the C 1s level can be used as a fingerprint for distinguishing diamond from graphite or carbides [D. N. Belton and S. J. Schmieg, J. Vac. Sci. Technol. A 8, 2353 (1990)]. The identification of a continuous diamond film was confirmed with Raman spectroscopy and scanning electron microscopy (SEM).

1.
D. N.
Belton
and
S. J.
Schmieg
,
J. Vac. Sci. Technol. A
8
,
2353
(
1990
).
2.
F. R.
McFeely
,
S. P.
Kowalczyk
,
L.
Ley
,
R. G.
Cavell
,
R. A.
Pollak
, and
D. A.
Shirley
,
Phys. Rev. B
9
,
5268
(
1974
).
3.
D. N.
Belton
and
S. J.
Schmieg
,
Appl. Phys. Lett.
54
,
416
(
1989
).

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