Volume 21 Issue 3 | Journal of Vacuum Science and Technology

Skip Nav Destination

Technology and applications of broad‐beam ion sources used in sputtering. Part I. Ion source technology

H. R. Kaufman; J. J. Cuomo; J. M. E. Harper

J. Vac. Sci. Technol. 21, 725–736 (1982) https://doi.org/10.1116/1.571819

View articletitled, Technology and applications of broad‐beam ion sources used in sputtering. Part I. Ion source technology

Open the PDF for in another window

Technology and applications of broad‐beam ion sources used in sputtering. Part II. Applications

J. M. E. Harper; J. J. Cuomo; H. R. Kaufman

J. Vac. Sci. Technol. 21, 737–756 (1982) https://doi.org/10.1116/1.571820

Abstract

View articletitled, Technology and applications of broad‐beam ion sources used in sputtering. Part II. Applications

Open the PDF for in another window

Simulation of plasma‐assisted etching processes by ion‐beam techniques

T. M. Mayer; R. A. Barker

J. Vac. Sci. Technol. 21, 757–763 (1982) https://doi.org/10.1116/1.571821

Abstract

View articletitled, Simulation of plasma‐assisted etching processes by ion‐beam techniques

Open the PDF for in another window

Developments in broad‐beam, ion‐source technology and applications

H. R. Kaufman; J. M. E. Harper; J. J. Cuomo

J. Vac. Sci. Technol. 21, 764–767 (1982) https://doi.org/10.1116/1.571822

Abstract

View articletitled, Developments in broad‐beam, ion‐source technology and applications

Open the PDF for in another window

Plasma beam studies of Si and Al etching mechanisms

Donald L. Smith; Paul G. Saviano

J. Vac. Sci. Technol. 21, 768–773 (1982) https://doi.org/10.1116/1.571823

Abstract

View articletitled, Plasma beam studies of Si and Al etching mechanisms

Open the PDF for in another window

Plasma analysis based on newly found similarities in the relative populations of excited states produced by sputtering and by electron impact

Roger Kelly; S. A. Shivashankar; J. J. Cuomo

J. Vac. Sci. Technol. 21, 774–777 (1982) https://doi.org/10.1116/1.571824

Abstract

View articletitled, Plasma analysis based on newly found similarities in the relative populations of excited states produced by sputtering and by electron impact

Open the PDF for in another window

Factors determining the compound phases formed by oxygen or nitrogen implantation in metals

Roger Kelly

J. Vac. Sci. Technol. 21, 778–789 (1982) https://doi.org/10.1116/1.571825

Abstract

View articletitled, Factors determining the compound phases formed by oxygen or nitrogen implantation in metals

Open the PDF for in another window

Ion‐beam‐induced topography and surface diffusion

R. S. Robinson; S. M. Rossnagel

J. Vac. Sci. Technol. 21, 790–797 (1982) https://doi.org/10.1116/1.571826

Abstract

View articletitled, Ion‐beam‐induced topography and surface diffusion

Open the PDF for in another window

Laser‐enhanced gas–surface chemistry: Basic processes and applications

T. J. Chuang

J. Vac. Sci. Technol. 21, 798–806 (1982) https://doi.org/10.1116/1.571827

Abstract

View articletitled, Laser‐enhanced gas–surface chemistry: Basic processes and applications

Open the PDF for in another window

Ion beam sputter‐deposited diamondlike films

Bruce A. Banks; Sharon K. Rutledge

J. Vac. Sci. Technol. 21, 807–814 (1982) https://doi.org/10.1116/1.571828

Abstract

View articletitled, Ion beam sputter‐deposited diamondlike films

Open the PDF for in another window

Laser diagnostics of plasma etching: Measurement of Cl⁺₂ in a chlorine discharge

V. M. Donnelly; D. L. Flamm; G. Collins

J. Vac. Sci. Technol. 21, 817–823 (1982) https://doi.org/10.1116/1.571829

Abstract

View articletitled, Laser diagnostics of plasma etching: Measurement of Cl+2 in a chlorine discharge

Open the PDF for in another window

The fabrication and use of silicon and gallium arsenide ion source extraction grids

J. L. Speidell; J. M. E. Harper; J. J. Cuomo; A. W. Kleinsasser; H. R. Kaufman; A. H. Tuttle

J. Vac. Sci. Technol. 21, 824–827 (1982) https://doi.org/10.1116/1.571830

Abstract

View articletitled, The fabrication and use of silicon and gallium arsenide ion source extraction grids

Open the PDF for in another window

Model of bias sputtering in a dc‐triode configuration applied to the production of Pd films

P. Ziemann; E. Kay

J. Vac. Sci. Technol. 21, 828–832 (1982) https://doi.org/10.1116/1.571831

Abstract

View articletitled, Model of bias sputtering in a dc‐triode configuration applied to the production of Pd films

Open the PDF for in another window

Effects of argon pressure on the structure and properties of dc planar‐magnetron‐sputtered metal and semiconductor films with implications for solar energy applications

S. Craig; G. L. Harding

J. Vac. Sci. Technol. 21, 833–837 (1982) https://doi.org/10.1116/1.571832

Abstract

View articletitled, Effects of argon pressure on the structure and properties of dc planar‐magnetron‐sputtered metal and semiconductor films with implications for solar energy applications

Open the PDF for in another window

An XPS study of sputtered a‐Si,Ge alloys

G. Lucovsky; S. S. Chao; J. E. Tyler; G. De Maggio

J. Vac. Sci. Technol. 21, 838–844 (1982) https://doi.org/10.1116/1.571833

Abstract

View articletitled, An XPS study of sputtered a‐Si,Ge alloys

Open the PDF for in another window

A new x‐ray generator for XPS applications

O. Ganschow; P. Steffens

J. Vac. Sci. Technol. 21, 845–852 (1982) https://doi.org/10.1116/1.571834

Abstract

View articletitled, A new x‐ray generator for XPS applications

Open the PDF for in another window

Study of grain boundary diffusion of potassium in gold films using a clean, controlled, and localized source of alkali atoms

M. H. Farías; J. L. Peña; F. Sánchez‐Sinencio

J. Vac. Sci. Technol. 21, 853–857 (1982) https://doi.org/10.1116/1.571835

Abstract

View articletitled, Study of grain boundary diffusion of potassium in gold films using a clean, controlled, and localized source of alkali atoms

Open the PDF for in another window

The composition and structure of oxide films grown on the (110) crystal face of iron

M. Langell; G. A. Somorjai

J. Vac. Sci. Technol. 21, 858–866 (1982) https://doi.org/10.1116/1.571836

Abstract

View articletitled, The composition and structure of oxide films grown on the (110) crystal face of iron

Open the PDF for in another window

A miniature scanning electron microscope for investigation of the interior surface of a superconducting Nb radiofrequency accelerating cavity

A. G. Mathewson; A. Grillot

J. Vac. Sci. Technol. 21, 867–871 (1982) https://doi.org/10.1116/1.571837

Abstract

View articletitled, A miniature scanning electron microscope for investigation of the interior surface of a superconducting Nb radiofrequency accelerating cavity

Open the PDF for in another window

Electron optical column for high‐speed electron beam delineator: VL‐R2

M. Nakasuji; H. Wada; S. Sano

J. Vac. Sci. Technol. 21, 872–878 (1982) https://doi.org/10.1116/1.571838

Abstract

View articletitled, Electron optical column for high‐speed electron beam delineator: VL‐R2

Open the PDF for in another window

Computation of the elliptic functions used in calculating electron emission from surfaces

S. S. Sidhu

J. Vac. Sci. Technol. 21, 879–880 (1982) https://doi.org/10.1116/1.571839

Abstract

View articletitled, Computation of the elliptic functions used in calculating electron emission from surfaces

Open the PDF for in another window

A practical high capacity, high evaporation, rate‐resistance‐heated source

J. A. Dobrowolski; A. Waldorf; R. L. Wilkinson

J. Vac. Sci. Technol. 21, 881–885 (1982) https://doi.org/10.1116/1.571840

Abstract

View articletitled, A practical high capacity, high evaporation, rate‐resistance‐heated source

Open the PDF for in another window

Obtaining pressures in the 10⁻⁵ Pa range with oil‐sealed rotary vacuum pumps

B. R. F. Kendall

J. Vac. Sci. Technol. 21, 886–890 (1982) https://doi.org/10.1116/1.571841

Abstract

View articletitled, Obtaining pressures in the 10−5 Pa range with oil‐sealed rotary vacuum pumps

Open the PDF for in another window

Comments on: ’’Simulation of ion‐beam‐etched pattern profiles’’

J. A. Vallés‐Abarca; A. Gras‐Marti

J. Vac. Sci. Technol. 21, 891–892 (1982) https://doi.org/10.1116/1.571842

View articletitled, Comments on: ’’Simulation of ion‐beam‐etched pattern profiles’’

Open the PDF for in another window

Pressure pulsations above turbomolecular pumps

S. Danziger; B. R. F. Kendall; J. Dormer

J. Vac. Sci. Technol. 21, 893–895 (1982) https://doi.org/10.1116/1.571843

Abstract

View articletitled, Pressure pulsations above turbomolecular pumps

Open the PDF for in another window

A simple procedure for rejuvenating Cu/Be electron multipliers using an O₂ plasma

K. Frick

J. Vac. Sci. Technol. 21, 896 (1982) https://doi.org/10.1116/1.571844

Abstract

View articletitled, A simple procedure for rejuvenating Cu/Be electron multipliers using an O2 plasma

Open the PDF for in another window

MBE evaporation source fitted with shutter and water‐cooled jacket

A. Bosacchi; S. Franchi; P. Allegri; V. Avanzini

J. Vac. Sci. Technol. 21, 897–898 (1982) https://doi.org/10.1116/1.571845

Abstract

View articletitled, MBE evaporation source fitted with shutter and water‐cooled jacket

Open the PDF for in another window

Simple, low cost, and highly stable Pd evaporation source for use in UHV

B. C. De Cooman; R. W. Vook

J. Vac. Sci. Technol. 21, 899–900 (1982) https://doi.org/10.1116/1.571846

Abstract

View articletitled, Simple, low cost, and highly stable Pd evaporation source for use in UHV

Open the PDF for in another window

Real‐time parylene coating thickness measurement using optical reflectometry

H. Kim; T. Powers; J. Mason

J. Vac. Sci. Technol. 21, 900–901 (1982) https://doi.org/10.1116/1.571847

View articletitled, Real‐time parylene coating thickness measurement using optical reflectometry

Open the PDF for in another window

Anodization of aluminum wire for ultrahigh vacuum electromagnetic coils

John R. Barthel; John B. Hudson

J. Vac. Sci. Technol. 21, 901–902 (1982) https://doi.org/10.1116/1.571848

Abstract

View articletitled, Anodization of aluminum wire for ultrahigh vacuum electromagnetic coils

Open the PDF for in another window

Erratum: Undoped low resistivity CdS thin films deposited on low temperature (∠200 °C) substrate by single source evaporation [J. Vac. Sci. Technol. 20, 306 (1982)]

R. R. Arya; R. Beaulieu; M. Kwietniak; J. J. Loferski; L. Kazmerski

J. Vac. Sci. Technol. 21, 903 (1982) https://doi.org/10.1116/1.571849

View articletitled, Erratum: Undoped low resistivity CdS thin films deposited on low temperature (∠200 °C) substrate by single source evaporation [J. Vac. Sci. Technol. 20, 306 (1982)]

Open the PDF for in another window

Erratum: Preferential sputtering of TiC and TiB₂ coatings under D⁺ and ⁴He⁺ bombardment: Partial yields [J. Vac. Sci. Technol. 20, 1304 (1982)]

M. Kaminsky; R. Nielsen; P. Zschack

J. Vac. Sci. Technol. 21, 903 (1982) https://doi.org/10.1116/1.571850

View articletitled, Erratum: Preferential sputtering of TiC and TiB2 coatings under D+ and 4He+ bombardment: Partial yields [J. Vac. Sci. Technol. 20, 1304 (1982)]

Open the PDF for in another window

Air Movement and Vacuum Devices (Process Equipment Series, Vol. 3) edited by Mahesh V. Bhatia and Paul N. Chermisinoff

Mars Hablanian, Reviewer

J. Vac. Sci. Technol. 21, 904 (1982) https://doi.org/10.1116/1.571851

View articletitled, Air Movement and Vacuum Devices (Process Equipment Series, Vol. 3) edited by Mahesh V. Bhatia and Paul N. Chermisinoff

Technology and applications of broad‐beam ion sources used in sputtering. Part I. Ion source technology

Technology and applications of broad‐beam ion sources used in sputtering. Part II. Applications

Simulation of plasma‐assisted etching processes by ion‐beam techniques

Developments in broad‐beam, ion‐source technology and applications

Plasma beam studies of Si and Al etching mechanisms

Plasma analysis based on newly found similarities in the relative populations of excited states produced by sputtering and by electron impact

Factors determining the compound phases formed by oxygen or nitrogen implantation in metals

Ion‐beam‐induced topography and surface diffusion

Laser‐enhanced gas–surface chemistry: Basic processes and applications

Ion beam sputter‐deposited diamondlike films

Laser diagnostics of plasma etching: Measurement of Cl⁺₂ in a chlorine discharge

The fabrication and use of silicon and gallium arsenide ion source extraction grids

Model of bias sputtering in a dc‐triode configuration applied to the production of Pd films

Effects of argon pressure on the structure and properties of dc planar‐magnetron‐sputtered metal and semiconductor films with implications for solar energy applications

An XPS study of sputtered a‐Si,Ge alloys

A new x‐ray generator for XPS applications

Study of grain boundary diffusion of potassium in gold films using a clean, controlled, and localized source of alkali atoms

The composition and structure of oxide films grown on the (110) crystal face of iron

A miniature scanning electron microscope for investigation of the interior surface of a superconducting Nb radiofrequency accelerating cavity

Electron optical column for high‐speed electron beam delineator: VL‐R2

Computation of the elliptic functions used in calculating electron emission from surfaces

A practical high capacity, high evaporation, rate‐resistance‐heated source

Obtaining pressures in the 10⁻⁵ Pa range with oil‐sealed rotary vacuum pumps

Comments on: ’’Simulation of ion‐beam‐etched pattern profiles’’

Pressure pulsations above turbomolecular pumps

A simple procedure for rejuvenating Cu/Be electron multipliers using an O₂ plasma

MBE evaporation source fitted with shutter and water‐cooled jacket

Simple, low cost, and highly stable Pd evaporation source for use in UHV

Real‐time parylene coating thickness measurement using optical reflectometry

Anodization of aluminum wire for ultrahigh vacuum electromagnetic coils

Erratum: Undoped low resistivity CdS thin films deposited on low temperature (∠200 °C) substrate by single source evaporation [J. Vac. Sci. Technol. 20, 306 (1982)]

Erratum: Preferential sputtering of TiC and TiB₂ coatings under D⁺ and ⁴He⁺ bombardment: Partial yields [J. Vac. Sci. Technol. 20, 1304 (1982)]

Air Movement and Vacuum Devices (Process Equipment Series, Vol. 3) edited by Mahesh V. Bhatia and Paul N. Chermisinoff

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Issues

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only