Journal of Vacuum Science and Technology

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Chemical composition and formation of thermal and anodic oxide/III–V compound semiconductor interfaces

C. W. Wilmsen

J. Vac. Sci. Technol. 19, 279–289 (1981) https://doi.org/10.1116/1.571118

View articletitled, Chemical composition and formation of thermal and anodic oxide/III–V compound semiconductor interfaces

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Surface reconstruction and interface formation in Si and GaAs

A. D. Katnani; N. G. Stoffel; H. S. Edelman; G. Margaritondo

J. Vac. Sci. Technol. 19, 290–293 (1981) https://doi.org/10.1116/1.571051

Abstract

View articletitled, Surface reconstruction and interface formation in Si and GaAs

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Atomic structure of GaP (110) and (111) faces

B. W. Lee; R. K. Ni; N. Masud; X. R. Wang; D. C. Wang; M. Rowe

J. Vac. Sci. Technol. 19, 294–300 (1981) https://doi.org/10.1116/1.571052

Abstract

View articletitled, Atomic structure of GaP (110) and (111) faces

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Angle‐resolved and ‐integrated photoemission from a ZnSe (110) surface

A. Ebina; T. Unno; Y. Suda; H. Koinuma; T. Takahashi

J. Vac. Sci. Technol. 19, 301–306 (1981) https://doi.org/10.1116/1.571053

Abstract

View articletitled, Angle‐resolved and ‐integrated photoemission from a ZnSe (110) surface

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Critique of tight binding (orbital removal) method: Ideal vacancy and surface states

J. B. Krieger; P. M. Laufer

J. Vac. Sci. Technol. 19, 307–312 (1981) https://doi.org/10.1116/1.571054

Abstract

View articletitled, Critique of tight binding (orbital removal) method: Ideal vacancy and surface states

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On the electronic structure of clean, 2×1 reconstructed silicon (001) surfaces

W. Mönch; P. Koke; S. Krueger

J. Vac. Sci. Technol. 19, 313–318 (1981) https://doi.org/10.1116/1.571055

Abstract

View articletitled, On the electronic structure of clean, 2×1 reconstructed silicon (001) surfaces

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Low energy electron loss spectroscopy of Si–Ge interfaces

P. Perfetti; S. Nannarone; F. Patella; C. Quaresima; F. Cerrina; M. Capozi; A. Savoia; I. Lindau

J. Vac. Sci. Technol. 19, 319–322 (1981) https://doi.org/10.1116/1.571056

Abstract

View articletitled, Low energy electron loss spectroscopy of Si–Ge interfaces

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LEED investigation of extended defects at the surface of Ge films grown epitaxially on GaAs(110)

H. M. Clearfield; D. G. Welkie; T.‐M. Lu; M. G. Lagally

J. Vac. Sci. Technol. 19, 323–330 (1981) https://doi.org/10.1116/1.571057

Abstract

View articletitled, LEED investigation of extended defects at the surface of Ge films grown epitaxially on GaAs(110)

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Atomic geometry of Al−GaAs interfaces: GaAs (110)–p(1 × 1)–Al(ϑ), 0?ϑ?8.5 monolayers

A. Kahn; J. Carelli; D. Kanani; C. B. Duke; A. Paton; L. Brillson

J. Vac. Sci. Technol. 19, 331–334 (1981) https://doi.org/10.1116/1.571058

Abstract

View articletitled, Atomic geometry of Al−GaAs interfaces: GaAs (110)–p(1 × 1)–Al(ϑ), 0?ϑ?8.5 monolayers

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Reconstructions of GaAs and AlAs surfaces as a function of metal to As ratio

R. Z. Bachrach; R. S. Bauer; P. Chiaradia; G. V. Hansson

J. Vac. Sci. Technol. 19, 335–343 (1981) https://doi.org/10.1116/1.571059

Abstract

View articletitled, Reconstructions of GaAs and AlAs surfaces as a function of metal to As ratio

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Effects of surface relaxation on the electronic structure of ZnO (101̄0)

I. Ivanov; J. Pollmann

J. Vac. Sci. Technol. 19, 344–346 (1981) https://doi.org/10.1116/1.571060

Abstract

View articletitled, Effects of surface relaxation on the electronic structure of ZnO (101̄0)

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Summary Abstract: Electronic properties of highly‐doped Si(111)‐(1×1) surfaces prepared by laser annealing

D. E. Eastman; P. Heimann; F. J. Himpsel; B. Reihl; D. M. Zehner; C. W. White

J. Vac. Sci. Technol. 19, 347–348 (1981) https://doi.org/10.1116/1.571061

View articletitled, Summary Abstract: Electronic properties of highly‐doped Si(111)‐(1×1) surfaces prepared by laser annealing

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Formation of surface states on the (111) surface of diamond

B. B. Pate; P.M. Stefan; C. Binns; P. J. Jupiter; M. L. Shek; I. Lindau; W. E. Spicer

J. Vac. Sci. Technol. 19, 349–354 (1981) https://doi.org/10.1116/1.571062

Abstract

View articletitled, Formation of surface states on the (111) surface of diamond

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A new theory of electronic surface states

D. H. Lee; J. D. Joannopoulos

J. Vac. Sci. Technol. 19, 355–359 (1981) https://doi.org/10.1116/1.571063

Abstract

View articletitled, A new theory of electronic surface states

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Core to surface excitations on GaAs(110)

C. A. Swarts; W. A. Goddard, III; T. C. McGill

J. Vac. Sci. Technol. 19, 360–366 (1981) https://doi.org/10.1116/1.571064

Abstract

View articletitled, Core to surface excitations on GaAs(110)

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Photoelectron spectroscopy of II–VI semiconductors under cooperative UV and visible excitation

R. T. Williams; J. C. Rife; T. R. Royt; M. N. Kabler

J. Vac. Sci. Technol. 19, 367–372 (1981) https://doi.org/10.1116/1.571065

Abstract

View articletitled, Photoelectron spectroscopy of II–VI semiconductors under cooperative UV and visible excitation

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Electrical properties of SiO₂ and Si₃N₄ dielectric layers on InP

L. G. Meiners

J. Vac. Sci. Technol. 19, 373–379 (1981) https://doi.org/10.1116/1.571066

Abstract

View articletitled, Electrical properties of SiO2 and Si3N4 dielectric layers on InP

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Raman spectroscopy as a surface sensitive technique on semiconductors

H. J. Stolz; G. Abstreiter

J. Vac. Sci. Technol. 19, 380–382 (1981) https://doi.org/10.1116/1.571067

Abstract

View articletitled, Raman spectroscopy as a surface sensitive technique on semiconductors

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Unified theory of point–defect electronic states, core excitons, and intrinsic electronic states at semiconductor surfaces

R. E. Allen; J D. Dow

J. Vac. Sci. Technol. 19, 383–387 (1981) https://doi.org/10.1116/1.571068

Abstract

View articletitled, Unified theory of point–defect electronic states, core excitons, and intrinsic electronic states at semiconductor surfaces

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Summary Abstract: Surface core excitons in III–V semiconductors

M. S. Daw; D. L. Smith; T. C. McGill

J. Vac. Sci. Technol. 19, 388–389 (1981) https://doi.org/10.1116/1.571069

Abstract

View articletitled, Summary Abstract: Surface core excitons in III–V semiconductors

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Low‐temperature annealing and hydrogenation of defects at the Si–SiO₂ interface

N. M. Johnson; D. K. Biegelsen; M. D. Moyer

J. Vac. Sci. Technol. 19, 390–394 (1981) https://doi.org/10.1116/1.571070

Abstract

View articletitled, Low‐temperature annealing and hydrogenation of defects at the Si–SiO2 interface

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Electronic structure of defects at Si/SiO₂ interfaces

F. Herman; R. V. Kasowski

J. Vac. Sci. Technol. 19, 395–401 (1981) https://doi.org/10.1116/1.571071

Abstract

View articletitled, Electronic structure of defects at Si/SiO2 interfaces

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Multipolariton modes of a compound semiconducting surface depletion layer

J. J. Quinn; Adolfo Eguiluz; R. F. Wallis; S. Das Sarma

J. Vac. Sci. Technol. 19, 402–405 (1981) https://doi.org/10.1116/1.571072

Abstract

View articletitled, Multipolariton modes of a compound semiconducting surface depletion layer

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Optical investigation of the electrical properties of a polycrystalline–semiconductor–electrolyte interface using electroreflectance

R. P. Silberstein; Joseph K. Lyden; Micha Tomkiewicz; Fred H. Pollak

J. Vac. Sci. Technol. 19, 406–410 (1981) https://doi.org/10.1116/1.571028

Abstract

View articletitled, Optical investigation of the electrical properties of a polycrystalline–semiconductor–electrolyte interface using electroreflectance

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Time‐resolved charge injection from Al into clean CdS and CdSe

J. H. Slowik

J. Vac. Sci. Technol. 19, 411–414 (1981) https://doi.org/10.1116/1.571029

Abstract

View articletitled, Time‐resolved charge injection from Al into clean CdS and CdSe

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MBE‐grown fluoride films: A new class of epitaxial dielectrics

R. F. C. Farrow; P. W. Sullivan; G. M. Williams; G. R. Jones; D. C. Cameron

J. Vac. Sci. Technol. 19, 415–420 (1981) https://doi.org/10.1116/1.571030

Abstract

View articletitled, MBE‐grown fluoride films: A new class of epitaxial dielectrics

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Trap studies on GaAs–Si₃N₄ interfaces

F. L. Schuermeyer; H. P. Singh

J. Vac. Sci. Technol. 19, 421–426 (1981) https://doi.org/10.1116/1.571031

Abstract

View articletitled, Trap studies on GaAs–Si3N4 interfaces

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GaAs Schottky light emitters for the study of surface avalanching and electroluminescence

H. Adachi; H. L. Hartnagel

J. Vac. Sci. Technol. 19, 427–430 (1981) https://doi.org/10.1116/1.571032

Abstract

View articletitled, GaAs Schottky light emitters for the study of surface avalanching and electroluminescence

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XPS study of interface formation of CVD SiO₂ on InSb

R. P. Vasquez; F. J. Grunthaner

J. Vac. Sci. Technol. 19, 431–436 (1981) https://doi.org/10.1116/1.571033

Abstract

View articletitled, XPS study of interface formation of CVD SiO2 on InSb

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Origin of U‐shaped background density of interface states at nonlattice matched semiconductor interfaces

J. Singh; A. Madhukar

J. Vac. Sci. Technol. 19, 437–442 (1981) https://doi.org/10.1116/1.571034

Abstract

View articletitled, Origin of U‐shaped background density of interface states at nonlattice matched semiconductor interfaces

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Antisite defect in GaAs and at the GaAs–AlAs interface

P. J. Lin‐Chung; T. L. Reinecke

J. Vac. Sci. Technol. 19, 443–446 (1981) https://doi.org/10.1116/1.571035

Abstract

View articletitled, Antisite defect in GaAs and at the GaAs–AlAs interface

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Ideal vacancy induced band gap levels in lattice matched thin superlattices: The GaAs–AlAs(100) and GaSb–InAs(100) systems

S. Das Sarma; A. Madhukar

J. Vac. Sci. Technol. 19, 447–452 (1981) https://doi.org/10.1116/1.571036

Abstract

View articletitled, Ideal vacancy induced band gap levels in lattice matched thin superlattices: The GaAs–AlAs(100) and GaSb–InAs(100) systems

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Overcompensated surface layer in n‐GaAs due to anodic oxidation

E. Kamieniecki; G. Cooperman

J. Vac. Sci. Technol. 19, 453–455 (1981) https://doi.org/10.1116/1.571037

Abstract

View articletitled, Overcompensated surface layer in n‐GaAs due to anodic oxidation

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A chemical bonding model for the native oxides of the III–V compound semiconductors

G. Lucovsky

J. Vac. Sci. Technol. 19, 456–462 (1981) https://doi.org/10.1116/1.571038

Abstract

View articletitled, A chemical bonding model for the native oxides of the III–V compound semiconductors

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Ion beam characterization of the GaAs–GaAs oxide interface for plasma and anodic oxides

C. J. Maggiore; R. S. Wagner

J. Vac. Sci. Technol. 19, 463–466 (1981) https://doi.org/10.1116/1.571039

Abstract

View articletitled, Ion beam characterization of the GaAs–GaAs oxide interface for plasma and anodic oxides

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Initial oxidation of CuInSe₂

L. L. Kazmerski; O. Jamjoum; P. J. Ireland; S. K. Deb; R. A. Mickelsen; W. Chen

J. Vac. Sci. Technol. 19, 467–471 (1981) https://doi.org/10.1116/1.571040

Abstract

View articletitled, Initial oxidation of CuInSe2

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Anodic oxide composition and Hg depletion at the oxide–semiconductor interface of Hg_1−xCd_xTe

G. D. Davis; T. S. Sun; S. P. Buchner; N. E. Byer

J. Vac. Sci. Technol. 19, 472–476 (1981) https://doi.org/10.1116/1.571041

Abstract

View articletitled, Anodic oxide composition and Hg depletion at the oxide–semiconductor interface of Hg1−xCdxTe

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Correlation of GaAs surface chemistry and interface Fermi‐level position: A single defect model interpretation

R. W. Grant; J. R. Waldrop; S. P. Kowalczyk; E. A. Kraut

J. Vac. Sci. Technol. 19, 477–480 (1981) https://doi.org/10.1116/1.571042

Abstract

View articletitled, Correlation of GaAs surface chemistry and interface Fermi‐level position: A single defect model interpretation

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Possible oxygen chemisorption configurations on the Si(lll) 2×1 surface

C. Y. Su; P. R. Skeath; I. Lindau; W. E. Spicer

J. Vac. Sci. Technol. 19, 481–486 (1981) https://doi.org/10.1116/1.571043

Abstract

View articletitled, Possible oxygen chemisorption configurations on the Si(lll) 2×1 surface

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Oxygen adsorption on the disordered silicon surface

D. L. Ellsworth; C. W. Wilmsen

J. Vac. Sci. Technol. 19, 487–493 (1981) https://doi.org/10.1116/1.571044

Abstract

View articletitled, Oxygen adsorption on the disordered silicon surface

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Optically enhanced oxidation of semiconductors

S. A. Schafer; S. A. Lyon

J. Vac. Sci. Technol. 19, 494–497 (1981) https://doi.org/10.1116/1.571045

Abstract

View articletitled, Optically enhanced oxidation of semiconductors

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Oxidation of silicon surfaces

A. Redondo; W. A. Goddard, III; C. A. Swarts; T. C. McGill

J. Vac. Sci. Technol. 19, 498–501 (1981) https://doi.org/10.1116/1.571046

Abstract

View articletitled, Oxidation of silicon surfaces

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Effects of the environment on point‐defect energy levels in semiconductors

J.D. Dow; R. E. Allen; O. F. Sankey; J. P. Buisson; H. P. Hjalmarson

J. Vac. Sci. Technol. 19, 502–507 (1981) https://doi.org/10.1116/1.571047

Abstract

View articletitled, Effects of the environment on point‐defect energy levels in semiconductors

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Surface vacancies in II–VI and III–V zinc blende semiconductors

M. S. Daw; D.L. Smith; C.A. Swarts; T.C. McGill

J. Vac. Sci. Technol. 19, 508–512 (1981) https://doi.org/10.1116/1.571048

Abstract

View articletitled, Surface vacancies in II–VI and III–V zinc blende semiconductors

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Composition and thermal stability of thin native oxides on InP

J. F. Wager; D. L. Ellsworth; S. M. Goodnick; C. W. Wilmsen

J. Vac. Sci. Technol. 19, 513–518 (1981) https://doi.org/10.1116/1.571049

Abstract

View articletitled, Composition and thermal stability of thin native oxides on InP

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GaAs–oxide interface states: Gigantic photoionization via Auger‐like process

J. Lagowski; T. E. Kazior; W. Walukiewicz; H. C. Gatos; J. Siejka

J. Vac. Sci. Technol. 19, 519–524 (1981) https://doi.org/10.1116/1.571050

Abstract

View articletitled, GaAs–oxide interface states: Gigantic photoionization via Auger‐like process

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Surface photovoltage spectroscopy with cleaved GaAs (110) surfaces: Spectroscopy of Cr²⁺

W. Mönch; H. J. Clemens; S. Görlich; R. Enninghorst; H. Gant

J. Vac. Sci. Technol. 19, 525–530 (1981) https://doi.org/10.1116/1.571119

Abstract

View articletitled, Surface photovoltage spectroscopy with cleaved GaAs (110) surfaces: Spectroscopy of Cr2+

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Gallium arsenide large scale integrated circuits

S. I. Long; B. M. Welch; R. Zucca; R. C. Eden

J. Vac. Sci. Technol. 19, 531–536 (1981) https://doi.org/10.1116/1.571120

Abstract

View articletitled, Gallium arsenide large scale integrated circuits

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Technology challenges for ultrasmall silicon MOSFET’s

R. H. Dennard

J. Vac. Sci. Technol. 19, 537–539 (1981) https://doi.org/10.1116/1.571121

Abstract

View articletitled, Technology challenges for ultrasmall silicon MOSFET’s

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Conceptual problems in modeling submicron device physics

H. L. Grubin; D. K. Ferry

J. Vac. Sci. Technol. 19, 540–544 (1981) https://doi.org/10.1116/1.571122

Abstract

View articletitled, Conceptual problems in modeling submicron device physics

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Partial dislocations, columnar growth, clustering, and pinhole formation in ultrathin film semiconductor heterostructures

J. C. Phillips

J. Vac. Sci. Technol. 19, 545–550 (1981) https://doi.org/10.1116/1.571123

Abstract

View articletitled, Partial dislocations, columnar growth, clustering, and pinhole formation in ultrathin film semiconductor heterostructures

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Geometry of the abrupt (110) Ge/GaAs interface

C. A. Swarts; W. A. Goddard, III; T. C. McGill

J. Vac. Sci. Technol. 19, 551–555 (1981) https://doi.org/10.1116/1.571124

Abstract

View articletitled, Geometry of the abrupt (110) Ge/GaAs interface

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Models of column III and V elements on GaAs (110): Application to MBE

P. Skeath; I. Lindau; C. Y. Su; W. E. Spicer

J. Vac. Sci. Technol. 19, 556–560 (1981) https://doi.org/10.1116/1.571125

Abstract

View articletitled, Models of column III and V elements on GaAs (110): Application to MBE

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Light scattering spectroscopy of electrons in GaAs–(AlGa)As heterostructures: Correlation with transport properties

A. Pinczuk; J. M. Worlock; H. L. Störmer; A. C. Gossard; W. Wiegmann

J. Vac. Sci. Technol. 19, 561–563 (1981) https://doi.org/10.1116/1.571126

Abstract

View articletitled, Light scattering spectroscopy of electrons in GaAs–(AlGa)As heterostructures: Correlation with transport properties

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Deformation potentials of superlattices and interfaces

K. K. Mon; K. Hess; J.D. Dow

J. Vac. Sci. Technol. 19, 564–566 (1981) https://doi.org/10.1116/1.571127

Abstract

View articletitled, Deformation potentials of superlattices and interfaces

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Molecular beam epitaxy of Ge–GaAs superlattices

C.‐A. Chang; W. ‐K. Chu; E. E. Mendez; L. L. Chang; L. Esaki

J. Vac. Sci. Technol. 19, 567–570 (1981) https://doi.org/10.1116/1.571128

Abstract

View articletitled, Molecular beam epitaxy of Ge–GaAs superlattices

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Summary Abstract: Luminescence properties and structure of GaAs–Ga_1−xAl_xAs double heterostructure and multiple quantum wells superlattices

P. M. Petroff; C. Weisbuch; R. Dingle; A. C. Gossard; W. Wiegmann

J. Vac. Sci. Technol. 19, 571–572 (1981) https://doi.org/10.1116/1.571129

View articletitled, Summary Abstract: Luminescence properties and structure of GaAs–Ga1−xAlxAs double heterostructure and multiple quantum wells superlattices

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XPS measurement of GaAs–AlAs heterojunction band discontinuities: Growth sequence dependence

J. R. Waldrop; S. P. Kowalczyk; R. W. Grant; E. A. Kraut; D. L. Miller

J. Vac. Sci. Technol. 19, 573–575 (1981) https://doi.org/10.1116/1.571130

Abstract

View articletitled, XPS measurement of GaAs–AlAs heterojunction band discontinuities: Growth sequence dependence

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Summary Abstract: Surface and interface proximity effect on quantum well electron mobilities in modulation doped GaAs/Al_xGa_1−xAs heterostructures

W. I. Wang; N. Dandekar; C. E. C. Wood; L. F. Eastman

J. Vac. Sci. Technol. 19, 576–577 (1981) https://doi.org/10.1116/1.571131

View articletitled, Summary Abstract: Surface and interface proximity effect on quantum well electron mobilities in modulation doped GaAs/AlxGa1−xAs heterostructures

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Mismatch dislocation dangling bond distributions at zinc blende and wurtzite interfaces

K. A. Jones

J. Vac. Sci. Technol. 19, 578–583 (1981) https://doi.org/10.1116/1.571132

Abstract

View articletitled, Mismatch dislocation dangling bond distributions at zinc blende and wurtzite interfaces

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Nondestructive characterization of Ga_1−xAl_xAs–GaAs interfaces using nuclear profiling

J. S. Rosner; P. M. S. Lesser; F. H. Pollak; J. M. Woodall

J. Vac. Sci. Technol. 19, 584–588 (1981) https://doi.org/10.1116/1.571133

Abstract

View articletitled, Nondestructive characterization of Ga1−xAlxAs–GaAs interfaces using nuclear profiling

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Spatial separation of carriers in InAs–GaSb superlattices

L. L. Chang; G. A. Sai‐Halasz; L. Esaki; R. L. Aggarwal

J. Vac. Sci. Technol. 19, 589–591 (1981) https://doi.org/10.1116/1.571134

Abstract

View articletitled, Spatial separation of carriers in InAs–GaSb superlattices

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Electron transmission probabilities through GaAs/strained GaAsP/GaAs(100) heterostructures

G. C. Osbourn

J. Vac. Sci. Technol. 19, 592–595 (1981) https://doi.org/10.1116/1.571135

Abstract

View articletitled, Electron transmission probabilities through GaAs/strained GaAsP/GaAs(100) heterostructures

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Channeling analysis of MBE InAlAs/InGaAs interfaces

D. V. Morgan; C. E. C. Wood; H. Ohno; L. F. Eastman

J. Vac. Sci. Technol. 19, 596–598 (1981) https://doi.org/10.1116/1.571136

Abstract

View articletitled, Channeling analysis of MBE InAlAs/InGaAs interfaces

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Two‐dimensional electron transport in semiconductor layers II: Screening

P. J. Price

J. Vac. Sci. Technol. 19, 599–603 (1981) https://doi.org/10.1116/1.571137

Abstract

View articletitled, Two‐dimensional electron transport in semiconductor layers II: Screening

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Volatile metal oxide incorporation in layers of GaAs and Ga_1−xAl_xAs grown by molecular beam epitaxy

P. D. Kirchner; J. M. Woodall; J. L. Freeouf; D. J. Wolford; G. D. Pettit

J. Vac. Sci. Technol. 19, 604–606 (1981) https://doi.org/10.1116/1.571138

Abstract

View articletitled, Volatile metal oxide incorporation in layers of GaAs and Ga1−xAlxAs grown by molecular beam epitaxy

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Chemical reaction at the Al–GaAs interface

G. P. Schwartz; A. Y. Cho

J. Vac. Sci. Technol. 19, 607–610 (1981) https://doi.org/10.1116/1.571139

Abstract

View articletitled, Chemical reaction at the Al–GaAs interface

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Interfacial chemical reactivity of metal contacts with thin native oxides of GaAs

Steven P. Kowalczyk; J. R. Waldrop; R. W. Grant

J. Vac. Sci. Technol. 19, 611–616 (1981) https://doi.org/10.1116/1.571140

Abstract

View articletitled, Interfacial chemical reactivity of metal contacts with thin native oxides of GaAs

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Reactive interdiffusion and electronic barriers at metal–CdS and metal–CdSe interfaces: Control of Schottky barrier height using reactive interlayers

C. F. Brucker; L. J. Brillson

J. Vac. Sci. Technol. 19, 617–622 (1981) https://doi.org/10.1116/1.571141

Abstract

View articletitled, Reactive interdiffusion and electronic barriers at metal–CdS and metal–CdSe interfaces: Control of Schottky barrier height using reactive interlayers

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Ohmic contacts to lightly doped n and p indium phosphide surfaces

W. Tseng; A. Christou; H. Day; J. Davey; B. Wilkins

J. Vac. Sci. Technol. 19, 623–625 (1981) https://doi.org/10.1116/1.571073

Abstract

View articletitled, Ohmic contacts to lightly doped n and p indium phosphide surfaces

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Ohmic contacts to n‐GaAs using graded band gap layers of Ga_1−xIn_xAs grown by molecular beam epitaxy

J. M. Woodall; J. L. Freeouf; G. D. Pettit; T. Jackson; P. Kirchner

J. Vac. Sci. Technol. 19, 626–627 (1981) https://doi.org/10.1116/1.571074

Abstract

View articletitled, Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy

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Chlorine chemisorption on Si(111), Ge(111), and GaAs(110) surfaces

K. Zhang; L. Yeh

J. Vac. Sci. Technol. 19, 628–630 (1981) https://doi.org/10.1116/1.571075

Abstract

View articletitled, Chlorine chemisorption on Si(111), Ge(111), and GaAs(110) surfaces

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Photoemission investigation of Si(111)–Cu interfaces

I. Abbati; M. Grioni

J. Vac. Sci. Technol. 19, 631–635 (1981) https://doi.org/10.1116/1.571076

Abstract

View articletitled, Photoemission investigation of Si(111)–Cu interfaces

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Exploiting energy‐dependent photoemission in Si d‐metal interfaces: The Si(111)–Pd case

I. Abbati; G. Rossi; I. Lindau; W. E. Spicer

J. Vac. Sci. Technol. 19, 636–640 (1981) https://doi.org/10.1116/1.571077

Abstract

View articletitled, Exploiting energy‐dependent photoemission in Si d‐metal interfaces: The Si(111)–Pd case

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Oxygen impurity effects at metal/silicide interfaces: Formation of silicon oxide and suboxides in the Ni/Si system

P. J. Grunthaner; F. J. Grunthaner; D. M. Scott; M‐A. Nicolet; J. W. Mayer

J. Vac. Sci. Technol. 19, 641–648 (1981) https://doi.org/10.1116/1.571078

Abstract

View articletitled, Oxygen impurity effects at metal/silicide interfaces: Formation of silicon oxide and suboxides in the Ni/Si system

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Metal/silicon interface formation: The Ni/Si and Pd/Si systems

P. J. Grunthaner; F. J. Grunthaner; A. Madhukar; J. W. Mayer

J. Vac. Sci. Technol. 19, 649–656 (1981) https://doi.org/10.1116/1.571079

Abstract

View articletitled, Metal/silicon interface formation: The Ni/Si and Pd/Si systems

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Silicon–refractory metal interfaces: Evidence of room‐temperature intermixing for Si–Cr

A. Franciosi; D. J. Peterman; J. H. Weaver

J. Vac. Sci. Technol. 19, 657–660 (1981) https://doi.org/10.1116/1.571080

Abstract

View articletitled, Silicon–refractory metal interfaces: Evidence of room‐temperature intermixing for Si–Cr

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Atomic and electronic structure of InP–metal interfaces: A prototypical III–V compound semiconductor

L. J. Brillson; C. F. Brucker; A. D. Katnani; N. G. Stoffel; G. Margaritondo

J. Vac. Sci. Technol. 19, 661–666 (1981) https://doi.org/10.1116/1.571081

Abstract

View articletitled, Atomic and electronic structure of InP–metal interfaces: A prototypical III–V compound semiconductor

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Interface behavior and crystallographic relationships of aluminum on GaAs(100) surfaces

R. Ludeke; G. Landgren

J. Vac. Sci. Technol. 19, 667–673 (1981) https://doi.org/10.1116/1.571082

Abstract

View articletitled, Interface behavior and crystallographic relationships of aluminum on GaAs(100) surfaces

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Dissociative surface reactions at Schottky and heterojunction interfaces with AlAs and GaAs

R. S. Bauer; R. Z. Bachrach; G. V. Hansson; P. Chiaradia

J. Vac. Sci. Technol. 19, 674–680 (1981) https://doi.org/10.1116/1.571083

Abstract

View articletitled, Dissociative surface reactions at Schottky and heterojunction interfaces with AlAs and GaAs

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A study of Schottky barrier formation for Ga/Si(111)‐(2×1) and Sb/Si(111)‐(2×1) interfaces

J. L. Freeouf; M. Aono; F. J. Himpsel; D. E. Eastman

J. Vac. Sci. Technol. 19, 681–684 (1981) https://doi.org/10.1116/1.571084

Abstract

View articletitled, A study of Schottky barrier formation for Ga/Si(111)‐(2×1) and Sb/Si(111)‐(2×1) interfaces

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Interference enhanced Raman scattering study of the interfacial reaction of Pd on a‐Si:H

R. J. Nemanich; C. C. Tsai; M. J. Thompson; T. W. Sigmon

J. Vac. Sci. Technol. 19, 685–688 (1981) https://doi.org/10.1116/1.571085

Abstract

View articletitled, Interference enhanced Raman scattering study of the interfacial reaction of Pd on a‐Si:H

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Initial stage of formation of a metal‐semiconductor interface: Al on GaAs(110)

A. Zunger

J. Vac. Sci. Technol. 19, 690–692 (1981) https://doi.org/10.1116/1.571086

Abstract

View articletitled, Initial stage of formation of a metal‐semiconductor interface: Al on GaAs(110)

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A simple method for fabricating submicron lines

J. L. Speidell

J. Vac. Sci. Technol. 19, 693–695 (1981) https://doi.org/10.1116/1.571087

Abstract

View articletitled, A simple method for fabricating submicron lines

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Study of stability of MIS polycrystalline silicon solar cells by Auger electron spectroscopy

B. W. Lee; J. M. Kuo; B. Lalevic; W. A. Anderson

J. Vac. Sci. Technol. 19, 696–699 (1981) https://doi.org/10.1116/1.571088

Abstract

View articletitled, Study of stability of MIS polycrystalline silicon solar cells by Auger electron spectroscopy

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Magnetron sputtering of solar coatings inside tubes

S. J. Walker; D. R. McKenzie

J. Vac. Sci. Technol. 19, 700–703 (1981) https://doi.org/10.1116/1.571089

Abstract

View articletitled, Magnetron sputtering of solar coatings inside tubes

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Multi‐aperture ion source with a deflectable focused beam for compositional control in sputter deposition

J. W. Smits

J. Vac. Sci. Technol. 19, 704–708 (1981) https://doi.org/10.1116/1.571090

Abstract

View articletitled, Multi‐aperture ion source with a deflectable focused beam for compositional control in sputter deposition

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Oxygen monitors for aluminum and Al–O thin films

T. J. Faith; R. S. Irven; J. J. O’Neill, Jr.; F. J. Tams, III

J. Vac. Sci. Technol. 19, 709–716 (1981) https://doi.org/10.1116/1.571091

Abstract

View articletitled, Oxygen monitors for aluminum and Al–O thin films

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Cluster adsorption on amorphous and crystalline surfaces: A molecular dynamics study of model Pt on Cu and model Pd on Pt

S. H. Garofalini; T. Halicioglu; G. M. Pound

J. Vac. Sci. Technol. 19, 717–721 (1981) https://doi.org/10.1116/1.571092

Abstract

View articletitled, Cluster adsorption on amorphous and crystalline surfaces: A molecular dynamics study of model Pt on Cu and model Pd on Pt

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Oxygen induced dissolution and segregation of silicon in platinum single crystals

M. Salmerón; G. A. Somorjai

J. Vac. Sci. Technol. 19, 722–725 (1981) https://doi.org/10.1116/1.571093

Abstract

View articletitled, Oxygen induced dissolution and segregation of silicon in platinum single crystals

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Design of a molecular beam surface scattering apparatus for velocity and angular distribution measurements

S. T. Ceyer; W. J. Siekhaus; G. A. Somorjai

J. Vac. Sci. Technol. 19, 726–732 (1981) https://doi.org/10.1116/1.571094

Abstract

View articletitled, Design of a molecular beam surface scattering apparatus for velocity and angular distribution measurements

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Influence of spherical and chromatic aberrations on the half‐radius of an electron beam

W. Slówko

J. Vac. Sci. Technol. 19, 733–738 (1981) https://doi.org/10.1116/1.571095

Abstract

View articletitled, Influence of spherical and chromatic aberrations on the half‐radius of an electron beam

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Ultrasmooth plasma polymerized coatings for laser fusion targets

S. A. Letts; D. W. Myers; L. A. Witt

J. Vac. Sci. Technol. 19, 739–742 (1981) https://doi.org/10.1116/1.571142

Abstract

View articletitled, Ultrasmooth plasma polymerized coatings for laser fusion targets

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Oxygen plasma etching of thick polymer layers

I. S. Goldstein; F. Kalk

J. Vac. Sci. Technol. 19, 743–747 (1981) https://doi.org/10.1116/1.571143

Abstract

View articletitled, Oxygen plasma etching of thick polymer layers

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Influence of oxygen and water vapor on the ion induced desorption from stainless steel

R. Erlandsson

J. Vac. Sci. Technol. 19, 748–753 (1981) https://doi.org/10.1116/1.571144

Abstract

View articletitled, Influence of oxygen and water vapor on the ion induced desorption from stainless steel

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Effects of argon pressure on the structure of dc cylindrical magnetron sputtered thin copper films

S. Craig; G. L. Harding

J. Vac. Sci. Technol. 19, 754–755 (1981) https://doi.org/10.1116/1.571145

Abstract

View articletitled, Effects of argon pressure on the structure of dc cylindrical magnetron sputtered thin copper films

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VLSI Metallization: Some problems and trends

J. L. Vossen

J. Vac. Sci. Technol. 19, 761–765 (1981) https://doi.org/10.1116/1.571146

Abstract

View articletitled, VLSI Metallization: Some problems and trends

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Shallow and parallel silicide contacts

K. N. Tu

J. Vac. Sci. Technol. 19, 766–777 (1981) https://doi.org/10.1116/1.571147

Abstract

View articletitled, Shallow and parallel silicide contacts

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Refractory metal silicides for VLSI applications

A. K. Sinha

J. Vac. Sci. Technol. 19, 778–785 (1981) https://doi.org/10.1116/1.571148

Abstract

View articletitled, Refractory metal silicides for VLSI applications

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Diffusion barriers in layered contact structures

M‐A. Nicolet; M. Bartur

J. Vac. Sci. Technol. 19, 786–793 (1981) https://doi.org/10.1116/1.571149

Abstract

View articletitled, Diffusion barriers in layered contact structures

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GaAs metallization: Some problems and trends

J. M. Woodall; J. L. Freeouf

J. Vac. Sci. Technol. 19, 794–798 (1981) https://doi.org/10.1116/1.571150

Abstract

View articletitled, GaAs metallization: Some problems and trends

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Metallization for diode lasers

M. Ettenberg; I. Ladany

J. Vac. Sci. Technol. 19, 799–802 (1981) https://doi.org/10.1116/1.571151

Abstract

View articletitled, Metallization for diode lasers

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Alloyed ohmic contacts to GaAs

N. Braslau

J. Vac. Sci. Technol. 19, 803–807 (1981) https://doi.org/10.1116/1.571152

Abstract

View articletitled, Alloyed ohmic contacts to GaAs

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Summary Abstract: Novel contacts and layer structures by Molecular Beam Epitaxy

C. E. C. Wood

J. Vac. Sci. Technol. 19, 808–809 (1981) https://doi.org/10.1116/1.571153

View articletitled, Summary Abstract: Novel contacts and layer structures by Molecular Beam Epitaxy

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Erratum: Surface and interface properties of Zn₃P₂ solar cells

L. L. Kazmerski; P. J. Ireland; A. Catalano

J. Vac. Sci. Technol. 19, 811 (1981) https://doi.org/10.1116/1.571154

View articletitled, Erratum: Surface and interface properties of Zn3P2 solar cells

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Glow discharge processes, by Brian Chapman

C. J. Mojab, reviewer

J. Vac. Sci. Technol. 19, 812 (1981) https://doi.org/10.1116/1.571155

View articletitled, Glow discharge processes, by Brian Chapman

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