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Issues

Volume 16, Issue 5
September 1979
Journal of Vacuum Science and Technology Cover Image for Volume 16, Issue 5
All Issues
ISSN 0022-5355
Electronic structure calculations of interfaces and overlayers in the 1980’s
Frank Herman
J. Vac. Sci. Technol. 16, 1101–1107 (1979) https://doi.org/10.1116/1.570168
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Physics of compound semiconductor interfaces: A historical perspective
Robert S. Bauer
J. Vac. Sci. Technol. 16, 1108–1111 (1979) https://doi.org/10.1116/1.570169
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Review of binary alloy formation by thin film interactions
G. Ottaviani
J. Vac. Sci. Technol. 16, 1112–1119 (1979) https://doi.org/10.1116/1.570170
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Chemical and structural properties of the Pd/Si interface during the initial stages of silicide formation
P. S. Ho; T. Y. Tan; J. E. Lewis; G. W. Rubloff
J. Vac. Sci. Technol. 16, 1120–1124 (1979) https://doi.org/10.1116/1.570171
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Abstract: Growth and dissolution kinetics of ternary III–V compound heterostructures by liquid phase epitaxy
M. B. Small; R. Ghez
J. Vac. Sci. Technol. 16, 1125 (1979) https://doi.org/10.1116/1.570172
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Control of the VPE layer properties by the characteristics of the boundary layer
J. P. Duchemin; M. Bonnet; G. Beuchet
J. Vac. Sci. Technol. 16, 1126–1129 (1979) https://doi.org/10.1116/1.570173
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Lattice‐matched heterostructures as Schottky barriers: HgSe/CdSe
J. S. Best; J. O. McCaldin
J. Vac. Sci. Technol. 16, 1130–1133 (1979) https://doi.org/10.1116/1.570174
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Abstract: Total reflection x‐ray diffraction studies of the formation and the geometrical structure of Al–Ge(100) interfaces
Shang‐Lin Weng; A. Y. Cho; P. Eisenberger
J. Vac. Sci. Technol. 16, 1134 (1979) https://doi.org/10.1116/1.570175
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Schottky and Bardeen limits for Schottky barriers
Marvin L. Cohen
J. Vac. Sci. Technol. 16, 1135–1136 (1979) https://doi.org/10.1116/1.570176
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Chemical mechanisms of Schottky barrier formation
Leonard J. Brillson
J. Vac. Sci. Technol. 16, 1137–1142 (1979) https://doi.org/10.1116/1.570177
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Investigation of the mechanism for Schottky barrier formation by group III metals on GaAs(110)
Perry Skeath; I. Lindau; P. W. Chye; C. Y. Su; W. E. Spicer
J. Vac. Sci. Technol. 16, 1143–1148 (1979) https://doi.org/10.1116/1.570178
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Surface reactions and interdiffusion
R. Z. Bachrach; R. S. Bauer
J. Vac. Sci. Technol. 16, 1149–1153 (1979) https://doi.org/10.1116/1.570179
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Electronic structure of Al chemisorbed on GaAs(110)
Eugene J. Mele; J. D. Joannopoulos
J. Vac. Sci. Technol. 16, 1154–1158 (1979) https://doi.org/10.1116/1.570180
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Chemisorption site geometry and interface electronic structure of Ga and Al on GaAs(110)
D. J. Chadi; R. Z. Bachrach
J. Vac. Sci. Technol. 16, 1159–1163 (1979) https://doi.org/10.1116/1.570181
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Adsorption of type III and V elements on GaAs (110)
J. van Laar; A. Huijser; T. L. van Rooy
J. Vac. Sci. Technol. 16, 1164–1167 (1979) https://doi.org/10.1116/1.570182
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Raman scattering studies of surface space charge layers and Schottky barrier formation in InP
A. Pinczuk; A. A. Ballman; R. E. Nahory; M. A. Pollack; J. M. Worlock
J. Vac. Sci. Technol. 16, 1168–1170 (1979) https://doi.org/10.1116/1.570183
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Schottky barrier formation on (Pb,Sn)Te
S. Buchner; T. S. Sun; W. A. Beck; N. E. Byer; J. M. Chen
J. Vac. Sci. Technol. 16, 1171–1173 (1979) https://doi.org/10.1116/1.570184
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Modifications to PbTe surfaces and their interactions with oxygen produced by localized electron irradiation
S. R. L. McGlashan; R. M. King; E. H. C. Parker
J. Vac. Sci. Technol. 16, 1174–1177 (1979) https://doi.org/10.1116/1.570185
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Reconstruction and oxidation of the GaAs(110) surface
John J. Barton; William A. Goddard III; T. C. McGill
J. Vac. Sci. Technol. 16, 1178–1185 (1979) https://doi.org/10.1116/1.570186
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Oxygen interaction with GaAs surfaces: An XPS/UPS study
C. R. Brundle; D. Seybold
J. Vac. Sci. Technol. 16, 1186–1190 (1979) https://doi.org/10.1116/1.570187
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Oxidation of ordered and disordered GaAs(110)
P. W. Chye; C. Y. Su; I. Lindau; Perry Skeath; W. E. Spicer
J. Vac. Sci. Technol. 16, 1191–1194 (1979) https://doi.org/10.1116/1.570188
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Surface EXAFS investigation of oxygen chemisorption on GaAs(110)
J. Stöhr; R. S. Bauer; J. C. McMenamin; L. I. Johansson; S. Brennan
J. Vac. Sci. Technol. 16, 1195–1199 (1979) https://doi.org/10.1116/1.570189
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Gas adsorption on cleaved GaAs(110) surfaces studied by surface photovoltage spectroscopy
M. Liehr; H. Lüth
J. Vac. Sci. Technol. 16, 1200–1206 (1979) https://doi.org/10.1116/1.570190
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Study of low coverage adsorption on cleaved (110) InP surfaces using SIMS
M. G. Dowsett; E. H. C. Parker
J. Vac. Sci. Technol. 16, 1207–1210 (1979) https://doi.org/10.1116/1.570191
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Abstract: Adsorption of oxygen on clean InSb(110) surfaces
E. W. Kreutz; E. Rickus; N. Sotnik
J. Vac. Sci. Technol. 16, 1211 (1979) https://doi.org/10.1116/1.570192
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Electronic surface states on cleaved GaP(110): Initial steps of the oxygen chemisorption
G. M. Guichar; C. A. Sebenne; C. D. Thuault
J. Vac. Sci. Technol. 16, 1212–1215 (1979) https://doi.org/10.1116/1.570193
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Theoretical and experimental investigations of the electronic structure of oxygen on silicon
M. Chen; Inder P. Batra; C. R. Brundle
J. Vac. Sci. Technol. 16, 1216–1220 (1979) https://doi.org/10.1116/1.570194
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EXAFS studies of the bonding geometry of oxygen on Si(111) using electron yield detection
J. Stöhr; L. I. Johansson; I. Lindau; P. Pianetta
J. Vac. Sci. Technol. 16, 1221–1224 (1979) https://doi.org/10.1116/1.570195
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Relation of Si–H vibrational frequencies to surface bonding geometry
G. Lucovsky
J. Vac. Sci. Technol. 16, 1225–1228 (1979) https://doi.org/10.1116/1.570196
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Initial steps of interface formation: Surface states and thermodynamics
W. Göpel
J. Vac. Sci. Technol. 16, 1229–1235 (1979) https://doi.org/10.1116/1.570197
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Steps on III–V(110) faces: A theoretical investigation
D. Lohez; M. Lannoo
J. Vac. Sci. Technol. 16, 1236–1237 (1979) https://doi.org/10.1116/1.570132
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Surface states at clean, cleaved GaAs(110) surfaces
W. Mönch; H. J. Clemens
J. Vac. Sci. Technol. 16, 1238–1243 (1979) https://doi.org/10.1116/1.570133
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Work function measurements on MBE GaAs(001) layers
J. Massies; P. Devoldere; N. T. Linh
J. Vac. Sci. Technol. 16, 1244–1247 (1979) https://doi.org/10.1116/1.570134
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Reliability of surface structure determinations by LEED
F. Jona; H. D. Shih
J. Vac. Sci. Technol. 16, 1248–1251 (1979) https://doi.org/10.1116/1.570135
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Structure determination for the (110) surface of zincblende structure compound semiconductors
C. B. Duke; R. J. Meyer; A. Paton; P. Mark; A. Kahn; E. So; J. L. Yeh
J. Vac. Sci. Technol. 16, 1252–1257 (1979) https://doi.org/10.1116/1.570136
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Atomic structure of clean and arsenic‐covered GaAs(110) surfaces
B. J. Mrstik; S. Y. Tong; M. A. Van Hove
J. Vac. Sci. Technol. 16, 1258–1261 (1979) https://doi.org/10.1116/1.570137
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Single‐reflection layer‐scattering theory of low energy electron diffraction spectra
Harold P. Hjalmarson; John D. Dow; B. J. Mrstik
J. Vac. Sci. Technol. 16, 1262–1265 (1979) https://doi.org/10.1116/1.570138
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Milk‐stool model for Si(111) surface reconstruction
L. C. Snyder; Z. Wasserman; J. W. Moskowitz
J. Vac. Sci. Technol. 16, 1266–1269 (1979) https://doi.org/10.1116/1.570139
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LEED analysis and energy minimization calculations for Si(111) (7×7) surface structures
D. J. Miller; D. Haneman
J. Vac. Sci. Technol. 16, 1270–1285 (1979) https://doi.org/10.1116/1.570140
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Abstract: On the geometric structure of clean Si(111) surfaces
W. Monch; P. P. Auer; R. Fedder
J. Vac. Sci. Technol. 16, 1286 (1979) https://doi.org/10.1116/1.570141
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Electronic structure of the Si(111) 7×7 surface studied by angle‐resolved photoelectron spectroscopy
G. V. Hansson; R. I. G. Uhrberg; S. A. Flodström
J. Vac. Sci. Technol. 16, 1287–1289 (1979) https://doi.org/10.1116/1.570142
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Si(100) surfaces: Atomic and electronic structures
D. J. Chadi
J. Vac. Sci. Technol. 16, 1290–1296 (1979) https://doi.org/10.1116/1.570143
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Photoemission studies of intrinsic surface states on Si(100)
F. J. Himpsel; D. E. Eastman
J. Vac. Sci. Technol. 16, 1297–1299 (1979) https://doi.org/10.1116/1.570144
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GaAs surface states observed by x‐ray photoemission
R. Ludeke; L. Ley
J. Vac. Sci. Technol. 16, 1300–1301 (1979) https://doi.org/10.1116/1.570145
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Bulk interpretation of the angle‐resolved photoemission spectra from GaAs(110)
J. Colbert; N. J. Shevchik
J. Vac. Sci. Technol. 16, 1302–1306 (1979) https://doi.org/10.1116/1.570146
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Abstract: The (110) surface of GaAs
James R. Chelikowsky; Marvin L. Cohen
J. Vac. Sci. Technol. 16, 1307 (1979) https://doi.org/10.1116/1.570147
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Study of surfaces and interfaces using quantum chemistry techniques
William A. Goddard III; T. C. McGill
J. Vac. Sci. Technol. 16, 1308–1317 (1979) https://doi.org/10.1116/1.570148
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Hartree–Fock formalism for the calculation of total energies and charge densities of thin films
Frank E. Harris; Hendrik J. Monkhorst; William A. Schwalm
J. Vac. Sci. Technol. 16, 1318–1322 (1979) https://doi.org/10.1116/1.570149
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The Xα‐scattered wave cluster approach to modeling interfaces
Richard P. Messmer
J. Vac. Sci. Technol. 16, 1323–1326 (1979) https://doi.org/10.1116/1.570150
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Use of the cluster–Bethe‐lattice method in surface studies
R. B. Laughlin; J. D. Joannopoulos; D. J. Chadi
J. Vac. Sci. Technol. 16, 1327–1330 (1979) https://doi.org/10.1116/1.570151
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Pseudopotential surface and interface calculations
M. Schlüter
J. Vac. Sci. Technol. 16, 1331–1336 (1979) https://doi.org/10.1116/1.570152
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Contemporary pseudopotentials—Simple reliability criteria
Alex Zunger
J. Vac. Sci. Technol. 16, 1337–1348 (1979) https://doi.org/10.1116/1.570153
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Critique of the empirical tight‐binding method for semiconductor surfaces and interfaces
Sokrates T. Pantelides; J. Pollmann
J. Vac. Sci. Technol. 16, 1349–1358 (1979) https://doi.org/10.1116/1.570198
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First principles tight‐binding method for investigating electronic properties of surfaces, interfaces, and bulk solids
Inder P. Batra
J. Vac. Sci. Technol. 16, 1359–1363 (1979) https://doi.org/10.1116/1.570199
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Electronic structure of semi‐infinite III–V compound semiconductor surfaces and interfaces: Application to InAs/GaSb(110)
N. V. Dandekar; A. Madhukar; D. N. Lowy
J. Vac. Sci. Technol. 16, 1364–1369 (1979) https://doi.org/10.1116/1.570200
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Theory of exciton effects in semiconductor surface spectroscopy
M. Altarelli; G. Bachelet; R. Del Sole
J. Vac. Sci. Technol. 16, 1370–1373 (1979) https://doi.org/10.1116/1.570201
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Nondestructive characterization of interface layers between Si or GaAs and their oxides by spectroscopic ellipsometry
D. E. Aspnes; J. B. Theeten; R. P. H. Chang
J. Vac. Sci. Technol. 16, 1374–1378 (1979) https://doi.org/10.1116/1.570202
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Transverse acoustoelectric voltage (TAV) spectroscopy of gallium phosphide, indium arsenide and cadmium sulphide–nickel chloride
P. Das
J. Vac. Sci. Technol. 16, 1379–1382 (1979) https://doi.org/10.1116/1.570203
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Interfacial reactions on anodized GaAs
G. P. Schwartz; J. E. Griffiths; B. Schwartz
J. Vac. Sci. Technol. 16, 1383–1387 (1979) https://doi.org/10.1116/1.570204
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Abstract: Laser‐induced damage in crystalline and amorphous GaAs
Raphael Tsu; Rodney T. Hodgson; John E. Baglin
J. Vac. Sci. Technol. 16, 1388 (1979) https://doi.org/10.1116/1.570205
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Photoluminescent properties of GaAs–GaAlAs, GaAs–oxide, and GaAs–ZnS heterojunctions
J. M. Woodall; G. D. Pettit; T. Chappell; H. J. Hovel
J. Vac. Sci. Technol. 16, 1389–1393 (1979) https://doi.org/10.1116/1.570206
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Hot‐electron attenuation length in Ag/InP Schottky barriers
J. S. Escher; P. E. Gregory; T. J. Maloney
J. Vac. Sci. Technol. 16, 1394–1397 (1979) https://doi.org/10.1116/1.570207
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Reduction of surface recombination current with an oxygen‐doped Al0.5Ga0.5As surface layer on n‐type GaAs
H. C. Casey, Jr.; A. Y. Cho; P. W. Foy
J. Vac. Sci. Technol. 16, 1398–1401 (1979) https://doi.org/10.1116/1.570208
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Measurements of interface recombination velocity by capacitance/collection efficiency variation in Cu2S/CdS heterojunctions
N. Convers Wyeth; A. Rothwarf
J. Vac. Sci. Technol. 16, 1402–1405 (1979) https://doi.org/10.1116/1.570209
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Abstract: Charge storage and charge release modes for DLTS studies of MIS interface states and deep level impurities
C. R. Crowell; Shahram Alipanahi
J. Vac. Sci. Technol. 16, 1406 (1979) https://doi.org/10.1116/1.570210
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Measurement of interface defect states at oxidized silicon surfaces by constant‐capacitance DLTS
N. M. Johnson; D. J. Bartelink; J. P. McVittie
J. Vac. Sci. Technol. 16, 1407–1411 (1979) https://doi.org/10.1116/1.570211
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Reconstructing states at the Si–SiO2 interface
C. T. White; K. L. Ngai
J. Vac. Sci. Technol. 16, 1412–1416 (1979) https://doi.org/10.1116/1.570212
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Abstract: Properties of oxide–Hg1−xCdxTe interfaces
J. C. Thuillier; F. Bazenet
J. Vac. Sci. Technol. 16, 1417 (1979) https://doi.org/10.1116/1.570213
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Metal contacts to silicon and indium‐phosphide‐cleaved surfaces and the influence of intermediate adsorbed layers
R. H. Williams; R. R. Varma; V. Montgomery
J. Vac. Sci. Technol. 16, 1418–1421 (1979) https://doi.org/10.1116/1.570214
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New and unified model for Schottky barrier and III–V insulator interface states formation
W. E. Spicer; P. W. Chye; P. R. Skeath; C. Y. Su; I. Lindau
J. Vac. Sci. Technol. 16, 1422–1433 (1979) https://doi.org/10.1116/1.570215
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Initial oxidation and oxide/semiconductor interface formation on GaAs
C. W. Wilmsen; R. W. Kee; K. M. Geib
J. Vac. Sci. Technol. 16, 1434–1438 (1979) https://doi.org/10.1116/1.570216
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Comparative studies of oxygen adsorption on GaAs(110) surfaces with ultrathin aluminum and cesium overlayers
Perry Skeath; C. Y. Su; P. W. Chye; P. Pianetta; I. Lindau; W. E. Spicer
J. Vac. Sci. Technol. 16, 1439–1442 (1979) https://doi.org/10.1116/1.570217
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Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high‐resolution XPS
F. J. Grunthaner; P. J. Grunthaner; R. P. Vasquez; B. F. Lewis; J. Maserjian; A. Madhukar
J. Vac. Sci. Technol. 16, 1443–1453 (1979) https://doi.org/10.1116/1.570218
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Structure and composition of the Si/SiO2 interfacial region on TCE/O2 and CCl4/O2 oxidized silicon
H. Frenzel; P. Balk
J. Vac. Sci. Technol. 16, 1454–1456 (1979) https://doi.org/10.1116/1.570219
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Abstract: MeV ion scattering from thin Si single crystals: A novel approach to interface studies
L. C. Feldman; P. J. Silverman; I. Stensgaard; N. Cheung
J. Vac. Sci. Technol. 16, 1457 (1979) https://doi.org/10.1116/1.570220
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Inversion layers on InP
L. G. Meiners; D. L. Lile; D. A. Collins
J. Vac. Sci. Technol. 16, 1458–1461 (1979) https://doi.org/10.1116/1.570221
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Carrier generation and trapping in n‐InP/SiO2 capacitors
J. Stannard
J. Vac. Sci. Technol. 16, 1462–1465 (1979) https://doi.org/10.1116/1.570222
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Interface and dielectric properties of the n‐indium‐phosphide–silicon‐oxide system
Carl R. Zeisse
J. Vac. Sci. Technol. 16, 1466–1469 (1979) https://doi.org/10.1116/1.570223
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Interface characteristics of Inp MOS capacitors
K. P. Pande; G. G. Roberts
J. Vac. Sci. Technol. 16, 1470–1473 (1979) https://doi.org/10.1116/1.570224
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Characterization of improved InSb interfaces
J. D. Langan; C. R. Viswanathan
J. Vac. Sci. Technol. 16, 1474–1477 (1979) https://doi.org/10.1116/1.570225
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Dynamic properties of interface‐state bands in GaAs anodic MOS system
Hideki Hasegawa; Takayuki Sawada
J. Vac. Sci. Technol. 16, 1478–1482 (1979) https://doi.org/10.1116/1.570226
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Study of the properties of GaAs–anodic Al2O3 interfaces
B. Bayraktaroglu; F. L. Schuermeyer; J. T. Grant
J. Vac. Sci. Technol. 16, 1483–1486 (1979) https://doi.org/10.1116/1.570227
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GaAs/Ta2O5 and GaAs/Al2O3 interface structures
H. Nishi; A. G. Revesz
J. Vac. Sci. Technol. 16, 1487–1491 (1979) https://doi.org/10.1116/1.570228
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Theory of polar semiconductor surfaces
Walter A. Harrison
J. Vac. Sci. Technol. 16, 1492–1496 (1979) https://doi.org/10.1116/1.570229
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Abstract: Heterojunction interfaces in Ge–GaAs
E. A. Kraut; W. A. Harrison; J. R. Waldrop; R. W. Grant
J. Vac. Sci. Technol. 16, 1497 (1979) https://doi.org/10.1116/1.570230
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Electronic structure of Ge overlayers on (100) GaAs
J. Pollmann; Sokrates T. Pantelides
J. Vac. Sci. Technol. 16, 1498–1500 (1979) https://doi.org/10.1116/1.570231
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Electronic structure in GaAs/Ge through angle‐resolved photoemission
D. Denley; K. A. Mills; P. Perfetti; D. A. Shirley
J. Vac. Sci. Technol. 16, 1501–1503 (1979) https://doi.org/10.1116/1.570232
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Abstract: Observation of semiconductor–semimetal transition in InAs–GaSb superlattices
L. L. Chang; G. A. Sai–Halasz; N. J. Kawai; L. Esaki
J. Vac. Sci. Technol. 16, 1504–1505 (1979) https://doi.org/10.1116/1.570233
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Abstract: Crystallography of InAs–GsSb superlattices by Rutherford backscattering and channeling
F. W. Saris; Chin‐An Chang; W. K. Chu; L. Esaki
J. Vac. Sci. Technol. 16, 1506 (1979) https://doi.org/10.1116/1.570234
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Two‐dimensional effects and effective masses of the InAs/GaSb (001) superlattices
A. Madhukar; N. V. Dandekar; R. N. Nucho
J. Vac. Sci. Technol. 16, 1507–1511 (1979) https://doi.org/10.1116/1.570235
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Abstract: Electronic structure of the (100) InAs–GaSb superlattice
J. Ihm; Pui K. Lam; Marvin L. Cohen
J. Vac. Sci. Technol. 16, 1512 (1979) https://doi.org/10.1116/1.570236
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Ideal CdTe/HgTe superlattices
J. N. Schulman; T. C. McGill
J. Vac. Sci. Technol. 16, 1513–1516 (1979) https://doi.org/10.1116/1.570237
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Two‐dimensional electron gas at differentially doped GaAs–AlxGa1−xAs heterojunction interface
H. L. Störmer; R. Dingle; A. C. Gossard; W. Wiegmann; M. D. Sturge
J. Vac. Sci. Technol. 16, 1517–1519 (1979) https://doi.org/10.1116/1.570238
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Abstract: Observation of sixfold valley degeneracy in electron inversion layers at (111) Si–SiO2 interfaces
D. C. Tsui; G. Kaminsky
J. Vac. Sci. Technol. 16, 1520 (1979) https://doi.org/10.1116/1.570239
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Interface studies of AlxGa1–xAs–GaAs heterojunctions
C. M. Garner; C. Y. Su; W. E. Spicer
J. Vac. Sci. Technol. 16, 1521–1524 (1979) https://doi.org/10.1116/1.570240
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Rectification at n‐GaAs–n‐Ga0.7Al0.3As heterojunctions grown by liquid phase epitaxy
Amitabh Chandra; Lester F. Eastman
J. Vac. Sci. Technol. 16, 1525–1528 (1979) https://doi.org/10.1116/1.570241
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Carrier transport coefficients across GaAs–GaAlAs (100) interfaces
G. C. Osbourn; D. L. Smith
J. Vac. Sci. Technol. 16, 1529–1532 (1979) https://doi.org/10.1116/1.570242
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Surface analysis of rf plasma oxidized In and PbInAu films using ESCA
John M. Baker; R. W. Johnson; R. A. Pollak
J. Vac. Sci. Technol. 16, 1534–1541 (1979) https://doi.org/10.1116/1.570243
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Contamination effects in thermally evaporated films of iron and iron oxide
J.–E. Sundgren; P. Nath; H. T. G. Nilsson; S. Söder
J. Vac. Sci. Technol. 16, 1542–1547 (1979) https://doi.org/10.1116/1.570244
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Tellurium coating of PbTe surfaces
M. Bettini; G. Brandt; Sh. Rotter
J. Vac. Sci. Technol. 16, 1548–1553 (1979) https://doi.org/10.1116/1.570245
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Dissolution of carbon adlayers into the (110) face of nickel
Radhesyam Sau; John B. Hudson
J. Vac. Sci. Technol. 16, 1554–1556 (1979) https://doi.org/10.1116/1.570246
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Adsorption of water on copper and cuprous oxide
S. P. Sharma
J. Vac. Sci. Technol. 16, 1557–1559 (1979) https://doi.org/10.1116/1.570247
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Tellurium and selenium selective absorber thin films produced by gas‐evaporation methods
F. H. Cocks; M. J. Peterson
J. Vac. Sci. Technol. 16, 1560–1563 (1979) https://doi.org/10.1116/1.570248
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Measurements of the axial density profiles of sputtered cathode atoms in a dc glow discharge
Alwin Elbern
J. Vac. Sci. Technol. 16, 1564–1568 (1979) https://doi.org/10.1116/1.570249
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Magnitude of the atom shielding effect of oxygen in ion scattering spectrometry of magnesium silicate (forsterite)
R. C. McCune
J. Vac. Sci. Technol. 16, 1569–1572 (1979) https://doi.org/10.1116/1.570250
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A possible conflict of J. Vac. Sci. Technol. 15, 1182 (1978) with the second law of thermodynamics
D. Edwards, Jr.
J. Vac. Sci. Technol. 16, 1573–1574 (1979) https://doi.org/10.1116/1.570251
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Some basic problems with copper vacuum gaskets
Richard L. Moore
J. Vac. Sci. Technol. 16, 1575 (1979) https://doi.org/10.1116/1.570252
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