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Specular reflectance of unprotected and protected evaporated metallic front‐surface mirrors at various angles of incidence
J. Vac. Sci. Technol. 16, 113–116 (1979)
https://doi.org/10.1116/1.569881
Influence of atomic mixing and preferential sputtering on depth profiles and interfaces
J. Vac. Sci. Technol. 16, 121–127 (1979)
https://doi.org/10.1116/1.569883
Abstract: Effect of microstructure on interdiffusion in bimetallic Cu–Ni thin films
J. Vac. Sci. Technol. 16, 128–129 (1979)
https://doi.org/10.1116/1.569884
Induced interface interactions in Ti/Si systems by ion implantation
J. Vac. Sci. Technol. 16, 130–133 (1979)
https://doi.org/10.1116/1.569885
Effects of substrate orientation and rotation on internal stresses in sputtered metal films
J. Vac. Sci. Technol. 16, 134–137 (1979)
https://doi.org/10.1116/1.569886
Reactions of vacuum‐deposited thin Schottky barrier metallizations on gallium arsenide
J. Vac. Sci. Technol. 16, 138–140 (1979)
https://doi.org/10.1116/1.569887
Investigation of the Ag–In–Ge system used for alloyed contacts to GaAs
J. Vac. Sci. Technol. 16, 141–144 (1979)
https://doi.org/10.1116/1.569888
Abstract: Effect of substrate on the conductivity of evaporated Au–Ge alloy films
J. Vac. Sci. Technol. 16, 145–146 (1979)
https://doi.org/10.1116/1.569889
Effects of oxygen ion implantation on the structure and properties of aluminum thin films
J. Vac. Sci. Technol. 16, 156–159 (1979)
https://doi.org/10.1116/1.569893
Abstract: Reactively evaporated photoconductive PbO: crystal phase transformations induced by water vapor
J. Vac. Sci. Technol. 16, 160 (1979)
https://doi.org/10.1116/1.569894
Abstract: Physical properties of plasma‐grown GaAs oxides
J. Vac. Sci. Technol. 16, 161 (1979)
https://doi.org/10.1116/1.569895
Abstract: Oxidation of copper in controlled clean air and standard laboratory air at 50°C–150°C
J. Vac. Sci. Technol. 16, 161–163 (1979)
https://doi.org/10.1116/1.569896
Microfabrication by ion‐beam etching
J. Vac. Sci. Technol. 16, 164–170 (1979)
https://doi.org/10.1116/1.569897
Ion beam texturing of surfaces
J. Vac. Sci. Technol. 16, 175–178 (1979)
https://doi.org/10.1116/1.569899
Abstract: Ion beam deposition of thin films of ferroelectric lead zirconate titanate (PZT)
J. Vac. Sci. Technol. 16, 184 (1979)
https://doi.org/10.1116/1.569902
Silicon nitride layers on gallium arsenide by low‐energy ion beam sputtering
J. Vac. Sci. Technol. 16, 189–192 (1979)
https://doi.org/10.1116/1.569904
Chemical vapor deposition of spectrally selective surfaces for high‐temperature photothermal conversion
J. Vac. Sci. Technol. 16, 193–196 (1979)
https://doi.org/10.1116/1.569905
Copper sulfide films deposited by cylindrical magnetron reactive sputtering
J. Vac. Sci. Technol. 16, 200–203 (1979)
https://doi.org/10.1116/1.569907
Corrosion inhibition in sputter‐deposited thin‐film systems using an intermediary layer of palladium
J. Vac. Sci. Technol. 16, 204–207 (1979)
https://doi.org/10.1116/1.569908
Formation of thin Cu2S (chalcocite) films using reactive sputtering techniques
J. Vac. Sci. Technol. 16, 212–215 (1979)
https://doi.org/10.1116/1.569910
Abstract: In situ analysis of plasma‐grown oxides using a spectroscopic ellipsometer
J. Vac. Sci. Technol. 16, 216 (1979)
https://doi.org/10.1116/1.569911
Technique to determine the growth rate and resistivity of evaporated CdS thin films
J. Vac. Sci. Technol. 16, 222–225 (1979)
https://doi.org/10.1116/1.569913
Effects of vacuum processing erbium dideuteride/ditritide films deposited on chromium underlays on copper substrates
J. Vac. Sci. Technol. 16, 230–232 (1979)
https://doi.org/10.1116/1.569915
Relationship of optical degradation to surface morphology changes in solar absorbers
J. Vac. Sci. Technol. 16, 233–235 (1979)
https://doi.org/10.1116/1.569916
Effect of grain boundaries on the performance of polycrystalline tunnel MIS solar cells
J. Vac. Sci. Technol. 16, 236–239 (1979)
https://doi.org/10.1116/1.569917
Apparatus for simultaneous measurement of mass change, optical transmittance, and reflectance of thin films
J. Vac. Sci. Technol. 16, 244–247 (1979)
https://doi.org/10.1116/1.569919
H+ and D+ sputtering of thin tantalum films in the energy range of 0.6 to 15 keV
J. Vac. Sci. Technol. 16, 248–250 (1979)
https://doi.org/10.1116/1.569920
Application of matrix isolation spectroscopy to the measurement of sputtering yields
J. Vac. Sci. Technol. 16, 251–254 (1979)
https://doi.org/10.1116/1.569921
Issues in fabricating electron devices with submicrometer dimensions
J. Vac. Sci. Technol. 16, 260–268 (1979)
https://doi.org/10.1116/1.569923
Materials and techniques used in nanostructure fabrication
J. Vac. Sci. Technol. 16, 269–272 (1979)
https://doi.org/10.1116/1.569924
Abstract: Fundamentals of MBE
J. Vac. Sci. Technol. 16, 273–274 (1979)
https://doi.org/10.1116/1.569925
Substrate effect on the lattice constants of the MBE‐grown In1−xGaxAs and GaSb1−yAsy
J. Vac. Sci. Technol. 16, 285–286 (1979)
https://doi.org/10.1116/1.569927
Growth of CuInSe2 films using molecular beam epitaxy
J. Vac. Sci. Technol. 16, 287–289 (1979)
https://doi.org/10.1116/1.569928
Double epitaxy and the growth of polymorphic films of thallium iodide (TlI) on potassium chloride (KCl)
J. Vac. Sci. Technol. 16, 295–298 (1979)
https://doi.org/10.1116/1.569930
Reactive sputtering of carbon and carbide targets in nitrogen
J. Vac. Sci. Technol. 16, 299–302 (1979)
https://doi.org/10.1116/1.569931
Ultrathin metal oxide layers by reactive sputtering: their controlled deposition and characterization
J. Vac. Sci. Technol. 16, 303–306 (1979)
https://doi.org/10.1116/1.569932
Effects of deposition parameters on optical loss for rf‐sputtered Ta2O5 and Si3N4 waveguides
J. Vac. Sci. Technol. 16, 307–310 (1979)
https://doi.org/10.1116/1.569933
Characterization of amorphous barium titanate films prepared by rf sputtering
J. Vac. Sci. Technol. 16, 311–314 (1979)
https://doi.org/10.1116/1.569934
Radio‐frequency‐sputtered tetragonal barium titanate films on silicon
J. Vac. Sci. Technol. 16, 315–318 (1979)
https://doi.org/10.1116/1.569935
Abstract: Investigation of MoSi2 as an interconnect conductor for MOS devices
J. Vac. Sci. Technol. 16, 320 (1979)
https://doi.org/10.1116/1.569937
Ion bombardment effects on elemental incorporation probabilities during sputter deposition of GaSb and InSb
J. Vac. Sci. Technol. 16, 321–323 (1979)
https://doi.org/10.1116/1.569938
Surface cesium concentrations in cesium‐ion‐bombarded elemental and compound targets
J. Vac. Sci. Technol. 16, 324–327 (1979)
https://doi.org/10.1116/1.569939
Contact resistance response surface of sintered Al films on (100) silicon
J. Vac. Sci. Technol. 16, 328–330 (1979)
https://doi.org/10.1116/1.569940
Complex impedance of copper films
J. Vac. Sci. Technol. 16, 331–333 (1979)
https://doi.org/10.1116/1.569941
TEM study of the two‐step annealing of arsenic‐implanted 〈100〉 silicon
J. Vac. Sci. Technol. 16, 342–344 (1979)
https://doi.org/10.1116/1.569945
Effect of high‐temperature, postoxidation annealing on the electrical properties of the Si–SiO2 interface
J. Vac. Sci. Technol. 16, 345–347 (1979)
https://doi.org/10.1116/1.569946
Adhesion of copper films on ABS polymers deposited in an internal magnet magnetron sputtering system
J. Vac. Sci. Technol. 16, 348–351 (1979)
https://doi.org/10.1116/1.569947
Adhesion of thin films of evaporated titanium–copper after electroplating
J. Vac. Sci. Technol. 16, 352–355 (1979)
https://doi.org/10.1116/1.569948
Interface composition and adhesion of glow‐discharge‐formed organo–tin polymers
J. Vac. Sci. Technol. 16, 359–362 (1979)
https://doi.org/10.1116/1.569950
Effects of sputter etching and process techniqes on the properties of sputtered aluminum films
J. Vac. Sci. Technol. 16, 369–376 (1979)
https://doi.org/10.1116/1.569953
Preferential lateral chemical etching in reactive ion etching of aluminum and aluminum alloys
J. Vac. Sci. Technol. 16, 377–380 (1979)
https://doi.org/10.1116/1.569954
Sputter etching in an argon–oxygen plasma and its implications to device fabrication
J. Vac. Sci. Technol. 16, 381–384 (1979)
https://doi.org/10.1116/1.569955
End‐point determination of aluminum reactive ion etching by discharge impedance monitoring
J. Vac. Sci. Technol. 16, 385–387 (1979)
https://doi.org/10.1116/1.569956
Abstract: Some chemical aspects of the fluorocarbon plasma etching of silicon and its compounds
J. Vac. Sci. Technol. 16, 407 (1979)
https://doi.org/10.1116/1.569960
Reactive ion etching of silicon
J. Vac. Sci. Technol. 16, 410–413 (1979)
https://doi.org/10.1116/1.569962
Metal‐containing plasma polymerized fluorocarbon films—their synthesis, structure, and polymerization mechanism
J. Vac. Sci. Technol. 16, 428–430 (1979)
https://doi.org/10.1116/1.569966
Abstract: Surface science and catalysis: The catalytic methanation reaction
J. Vac. Sci. Technol. 16, 433–434 (1979)
https://doi.org/10.1116/1.569968
Abstract: Chemisorption of oxygen on the (110) surface of iridium
J. Vac. Sci. Technol. 16, 439–440 (1979)
https://doi.org/10.1116/1.569972
An ELS vibrational study of carbon monoxide adsorbed on the Cu(110) surface
J. Vac. Sci. Technol. 16, 441–444 (1979)
https://doi.org/10.1116/1.569973
Abstract: Adsorption sites of CO on Ni(111) as determined by infrared reflection–absorption spectroscopy
J. Vac. Sci. Technol. 16, 445 (1979)
https://doi.org/10.1116/1.569974
Abstract: Oxygen on Pd(111): A study by photoemission and thermal desorption
J. Vac. Sci. Technol. 16, 445–446 (1979)
https://doi.org/10.1116/1.569975
Abstract: Photoemission studies of H2S, H2, and S adsorbed on Ru(110): Evidence for an adsorbed SH species
J. Vac. Sci. Technol. 16, 455–456 (1979)
https://doi.org/10.1116/1.569977
Abstract: Co on Pt(111) studied by photoemission and high resolution dynamic measurements of work function
J. Vac. Sci. Technol. 16, 457 (1979)
https://doi.org/10.1116/1.569979
Abstract: Condensation and compression of argon monolayers on graphite
J. Vac. Sci. Technol. 16, 458 (1979)
https://doi.org/10.1116/1.569980
Raman scattering from carbon monoxide adsorbed on evaporated silver films
J. Vac. Sci. Technol. 16, 459–461 (1979)
https://doi.org/10.1116/1.569981
Thermal decomposition of nickel carbide: an Auger lineshape study
J. Vac. Sci. Technol. 16, 462–465 (1979)
https://doi.org/10.1116/1.569982
Apparatus for Mössbauer effect emission and AES study of free surfaces
J. Vac. Sci. Technol. 16, 466–468 (1979)
https://doi.org/10.1116/1.569983
Adatom bonding effects from coverage‐dependent angle‐resolved photoemission: Ag(001)+Cl
J. Vac. Sci. Technol. 16, 470–473 (1979)
https://doi.org/10.1116/1.569985
Oxygen interaction with Ni/Fe surfaces (1) LEED and XPS studies of Ni 76%/Fe 24% (100)
J. Vac. Sci. Technol. 16, 474–477 (1979)
https://doi.org/10.1116/1.569986
Adlayer‐induced LEED beams near order–disorder transitions
J. Vac. Sci. Technol. 16, 478–482 (1979)
https://doi.org/10.1116/1.569987
Abstract: Modulated surface plasmon resonance for adsorption studies
J. Vac. Sci. Technol. 16, 483 (1979)
https://doi.org/10.1116/1.569988
Abstract: Chlorine adsorption on the low index surfaces of silver: Energetics and structures
J. Vac. Sci. Technol. 16, 484 (1979)
https://doi.org/10.1116/1.569989
Abstract: Identification of small bimetallic particles by controlled atmosphere electron microscopy
J. Vac. Sci. Technol. 16, 493 (1979)
https://doi.org/10.1116/1.569993
Abstract: Catalytic reaction between adsorbed oxygen and hydrogen on Rh(111)
J. Vac. Sci. Technol. 16, 494–495 (1979)
https://doi.org/10.1116/1.569994
Initial and final state effects in the photoionization spin–orbit branching ratio of core levels
J. Vac. Sci. Technol. 16, 507–509 (1979)
https://doi.org/10.1116/1.570021
Factors contributing to the Si L23VV, Si L1L23V and O KVV Auger lineshape in SiO2
J. Vac. Sci. Technol. 16, 510–513 (1979)
https://doi.org/10.1116/1.570022
Surface composition and characteristics of oxide‐free Ga1–xAlxAs (110) Schottky barriers
J. Vac. Sci. Technol. 16, 514–516 (1979)
https://doi.org/10.1116/1.570023
Abstract: Electron desorption of positive and negative oxygen ions from oxygen‐covered Mo(100) surfaces
J. Vac. Sci. Technol. 16, 518 (1979)
https://doi.org/10.1116/1.570025
Angular‐dependent ultraviolet photoemission spectroscopy of polycrystalline films: A probe of surface electronic structure
J. Vac. Sci. Technol. 16, 520–522 (1979)
https://doi.org/10.1116/1.570027
Abstract: Effect of electron beam on glass surface analysis by AES
J. Vac. Sci. Technol. 16, 527 (1979)
https://doi.org/10.1116/1.570029
4f core threshold effects in photoemission from Pt
J. Vac. Sci. Technol. 16, 528–530 (1979)
https://doi.org/10.1116/1.570030
Theoretical studies of nickel clusters and chemisorption of hydrogen
J. Vac. Sci. Technol. 16, 531–536 (1979)
https://doi.org/10.1116/1.570031
Abstract: Surface‐EXAFS studies of iodine adsorbed on Cu(111), Cu(110), and Ag(111) single‐crystal substrates
J. Vac. Sci. Technol. 16, 537 (1979)
https://doi.org/10.1116/1.570032
Abstract: Surface and interface study by derivative surface photovoltage spectroscopy: GaAs
J. Vac. Sci. Technol. 16, 538 (1979)
https://doi.org/10.1116/1.570033
Abstract: Ultraviolet photon‐induced secondary electron emission from TiO2: Theory and experiment
J. Vac. Sci. Technol. 16, 539–540 (1979)
https://doi.org/10.1116/1.570034
Abstract: Similar surface structures for CO and N2 absorbed on W(210)
J. Vac. Sci. Technol. 16, 552 (1979)
https://doi.org/10.1116/1.570039
AES study of the adsorption of O2, CO, CO2, and H2O on indium
J. Vac. Sci. Technol. 16, 558–561 (1979)
https://doi.org/10.1116/1.569996
High‐resolution LMM Auger spectra from argon implanted in Be and Si
J. Vac. Sci. Technol. 16, 562–565 (1979)
https://doi.org/10.1116/1.569997
Characterization of a sulfur‐resistant methanation catalyst by XPS.
J. Vac. Sci. Technol. 16, 567–569 (1979)
https://doi.org/10.1116/1.569999
Chemisorption studies of chlorine and fluorine on the silicon (111) surface
J. Vac. Sci. Technol. 16, 570–573 (1979)
https://doi.org/10.1116/1.570000
UPS Studies of H2, O2, and CO adsorption on ordered carbon overlayers on W(100)
J. Vac. Sci. Technol. 16, 577–580 (1979)
https://doi.org/10.1116/1.570002
Semidynamical RFS technique for LEED analysis, with an application to GaAs(110)
J. Vac. Sci. Technol. 16, 584–586 (1979)
https://doi.org/10.1116/1.570004
Emission of neutral particles from anodized aluminum surfaces during tensile deformation
J. Vac. Sci. Technol. 16, 590–593 (1979)
https://doi.org/10.1116/1.570006
Bonding geometry and electronic structure of the chalcogens on Ni(111)
J. Vac. Sci. Technol. 16, 594–598 (1979)
https://doi.org/10.1116/1.570007
Chemical characterization from carbon Auger spectra by application of pattern recognition and factor analysis
J. Vac. Sci. Technol. 16, 600–604 (1979)
https://doi.org/10.1116/1.570009
Morphology and electronic structure of Si–SiO2 interfaces and Si surfaces
J. Vac. Sci. Technol. 16, 608–614 (1979)
https://doi.org/10.1116/1.570011
Chemisorption of Cl in surface vacancies on Si(111) 1×1
J. Vac. Sci. Technol. 16, 615–617 (1979)
https://doi.org/10.1116/1.570012
AES investigation of the chemical structure of silicon oxy‐nitride films
J. Vac. Sci. Technol. 16, 618–621 (1979)
https://doi.org/10.1116/1.570013
Nucleation, growth, and postdeposition thermally induced epitaxy of gold on sapphire
J. Vac. Sci. Technol. 16, 622–624 (1979)
https://doi.org/10.1116/1.570014
Particle ejection from ion‐bombarded clean and reacted single‐crystal surfaces
J. Vac. Sci. Technol. 16, 629–634 (1979)
https://doi.org/10.1116/1.570017
Structural determination of the unreconstructed and the reconstructed (110) surfaces of iridium
J. Vac. Sci. Technol. 16, 642–645 (1979)
https://doi.org/10.1116/1.570042
Abstract: Structures of sulphur adsorbed on Mo(001) from LEED analysis: Effect on adsorption of carbon monoxide
J. Vac. Sci. Technol. 16, 651 (1979)
https://doi.org/10.1116/1.570045
Abstract: Resonancelike peaks in angle‐resolved ultraviolet photoemission of adsorbed species
J. Vac. Sci. Technol. 16, 652 (1979)
https://doi.org/10.1116/1.570046
Abstract: Core level binding energy and density of states from the first atomic layer of gold
J. Vac. Sci. Technol. 16, 653 (1979)
https://doi.org/10.1116/1.570047
Abstract: Use of Fourier transforms for analyziang the extended fine structure above appearance potential thresholds
J. Vac. Sci. Technol. 16, 660 (1979)
https://doi.org/10.1116/1.570049
Abstract: Study of composition changes under ion eombardment in the scanning Auger microprobe
J. Vac. Sci. Technol. 16, 672 (1979)
https://doi.org/10.1116/1.570054
Validity of mass spectrometric measurements at pressures exceeding 10−4 mbar
J. Vac. Sci. Technol. 16, 681–684 (1979)
https://doi.org/10.1116/1.570056
Direct‐molecular‐beam method for mass selective outgassing rate measurement
J. Vac. Sci. Technol. 16, 689–691 (1979)
https://doi.org/10.1116/1.570058
Heat of vaporization spectrometer
J. Vac. Sci. Technol. 16, 695–697 (1979)
https://doi.org/10.1116/1.570060
Tracer slug leak detection
J. Vac. Sci. Technol. 16, 698–700 (1979)
https://doi.org/10.1116/1.570061
UHV system for the ultramicrogravimetric study of samples loaded in a controlled environment
J. Vac. Sci. Technol. 16, 711–715 (1979)
https://doi.org/10.1116/1.570064
Cryogenic versus turbomolecular pumping in a sputtering application
J. Vac. Sci. Technol. 16, 728–730 (1979)
https://doi.org/10.1116/1.570069
Cryogenic pumping of helium, hydrogen, and a 90% hydrogen–10% helium mixture
J. Vac. Sci. Technol. 16, 731–733 (1979)
https://doi.org/10.1116/1.570070
Effects of thermal spikes on the characteristics of cryosorption pumps with condensed carbon dioxide layers
J. Vac. Sci. Technol. 16, 738–740 (1979)
https://doi.org/10.1116/1.570072
UHV compatibility of two possible fusion reactor materials: K‐ramicR and ATJ graphite
J. Vac. Sci. Technol. 16, 748–751 (1979)
https://doi.org/10.1116/1.570075
Observations of changes in residual gas and surface composition with discharge cleaning in PLT
J. Vac. Sci. Technol. 16, 752–757 (1979)
https://doi.org/10.1116/1.570076
Ion and electron desorption of neutral molecules from stainless steel (304)
J. Vac. Sci. Technol. 16, 758–760 (1979)
https://doi.org/10.1116/1.570077
Synchrotron‐radiation‐induced heating effects in the PEP storage ring vacuum system
J. Vac. Sci. Technol. 16, 761–762 (1979)
https://doi.org/10.1116/1.570078
Abstract: Preferred sputtering on binary alloy surfaces of the Al–Pd–Si system
J. Vac. Sci. Technol. 16, 772–773 (1979)
https://doi.org/10.1116/1.570082
Model of ion knock‐on mixing with application to Si–SiO2 interface studies
J. Vac. Sci. Technol. 16, 781–783 (1979)
https://doi.org/10.1116/1.570085
Correlation of short‐range order and sputter dose in GaAs(110) using a vidicon‐based LEED system
J. Vac. Sci. Technol. 16, 784–788 (1979)
https://doi.org/10.1116/1.570086
Ejection of molecular clusters from ion‐bombarded surfaces
J. Vac. Sci. Technol. 16, 789–792 (1979)
https://doi.org/10.1116/1.570087
Abstract: An XPS study of the chemical changes in oxide and hydroxide surfaces induced by Ar+ ion bombardment
J. Vac. Sci. Technol. 16, 797 (1979)
https://doi.org/10.1116/1.570089
Preferential sputtering in oxides as metals and revealed by x‐ray photoelectron spectroscopy
J. Vac. Sci. Technol. 16, 798–802 (1979)
https://doi.org/10.1116/1.570090