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Issues

Volume 16, Issue 2
March 1979
Journal of Vacuum Science and Technology Cover Image for Volume 16, Issue 2
All Issues
ISSN 0022-5355
Specular reflectance of unprotected and protected evaporated metallic front‐surface mirrors at various angles of incidence
Georg Hass
J. Vac. Sci. Technol. 16, 113–116 (1979) https://doi.org/10.1116/1.569881
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Address by Professor Auger to the members of the American Vacuum Society
Pierre Auger
J. Vac. Sci. Technol. 16, 117–119 (1979) https://doi.org/10.1116/1.569882
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Influence of atomic mixing and preferential sputtering on depth profiles and interfaces
Z. L. Liau; B. Y. Tsaur; J. W. Mauer
J. Vac. Sci. Technol. 16, 121–127 (1979) https://doi.org/10.1116/1.569883
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Abstract: Effect of microstructure on interdiffusion in bimetallic Cu–Ni thin films
B. C. Johnson; C. L. Bauer; A. G. Jordan
J. Vac. Sci. Technol. 16, 128–129 (1979) https://doi.org/10.1116/1.569884
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Induced interface interactions in Ti/Si systems by ion implantation
K. L. Wang; F. Bacon; R. F. Reihl
J. Vac. Sci. Technol. 16, 130–133 (1979) https://doi.org/10.1116/1.569885
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Effects of substrate orientation and rotation on internal stresses in sputtered metal films
D. W. Hoffman; John A. Thornton
J. Vac. Sci. Technol. 16, 134–137 (1979) https://doi.org/10.1116/1.569886
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Reactions of vacuum‐deposited thin Schottky barrier metallizations on gallium arsenide
S. D. Mukherjee; D V. Morgan; M. J. Howes; J. G. Smith; P. Brook
J. Vac. Sci. Technol. 16, 138–140 (1979) https://doi.org/10.1116/1.569887
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Investigation of the Ag–In–Ge system used for alloyed contacts to GaAs
G. E. McGuire; W. R. Wisseman; R. D. Ragle; J. H. Tregilgas
J. Vac. Sci. Technol. 16, 141–144 (1979) https://doi.org/10.1116/1.569888
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Abstract: Effect of substrate on the conductivity of evaporated Au–Ge alloy films
B. C. Johnson; C. H. Aspin; W. H. Wadlin
J. Vac. Sci. Technol. 16, 145–146 (1979) https://doi.org/10.1116/1.569889
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Resistance stabilization of Ni–Cr films by surface oxide formation
G. Nocerino; K. E. Singer
J. Vac. Sci. Technol. 16, 147–150 (1979) https://doi.org/10.1116/1.569890
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ISS study of the oxidation of Au on Cu (300 Å) thin films
Michio Nagasaka; R. Vasofsky; H. F. Helbig
J. Vac. Sci. Technol. 16, 151–154 (1979) https://doi.org/10.1116/1.569891
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Abstract: The failure of aged Cu–Au thin films by Kirkendall porosity
L. G. Feinstein; J. B. Bindell
J. Vac. Sci. Technol. 16, 155 (1979) https://doi.org/10.1116/1.569892
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Effects of oxygen ion implantation on the structure and properties of aluminum thin films
A. Gangulee; F. M. d’Heurle; V. A. Ranieri; R. A. Fiorio
J. Vac. Sci. Technol. 16, 156–159 (1979) https://doi.org/10.1116/1.569893
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Abstract: Reactively evaporated photoconductive PbO: crystal phase transformations induced by water vapor
J. R. Clarke; J. E. Greene
J. Vac. Sci. Technol. 16, 160 (1979) https://doi.org/10.1116/1.569894
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Abstract: Physical properties of plasma‐grown GaAs oxides
R. P. H. Chang; A. J. Polak; D. L. Allara; C. C. Chang; W. A. Lanford
J. Vac. Sci. Technol. 16, 161 (1979) https://doi.org/10.1116/1.569895
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Abstract: Oxidation of copper in controlled clean air and standard laboratory air at 50°C–150°C
M. R. Pinnel; H. G. Tompkins; D. E. Heath
J. Vac. Sci. Technol. 16, 161–163 (1979) https://doi.org/10.1116/1.569896
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Microfabrication by ion‐beam etching
Robert E. Lee
J. Vac. Sci. Technol. 16, 164–170 (1979) https://doi.org/10.1116/1.569897
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Characteristics of ion‐beam‐sputtered thin films
S. M. Kane; K. Y. Ahn
J. Vac. Sci. Technol. 16, 171–174 (1979) https://doi.org/10.1116/1.569898
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Ion beam texturing of surfaces
Harold R. Kaufman; Raymond S. Robinson
J. Vac. Sci. Technol. 16, 175–178 (1979) https://doi.org/10.1116/1.569899
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Abstract: Focused ion beam designs for sputter deposition
H. R. Kaufman; J. M. E. Harper; J. J. Cuomo
J. Vac. Sci. Technol. 16, 179–180 (1979) https://doi.org/10.1116/1.569900
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Properties and applications of saddle‐field ion sources
J. Franks
J. Vac. Sci. Technol. 16, 181–183 (1979) https://doi.org/10.1116/1.569901
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Abstract: Ion beam deposition of thin films of ferroelectric lead zirconate titanate (PZT)
R. N. Castellano; L. G. Feinstein
J. Vac. Sci. Technol. 16, 184 (1979) https://doi.org/10.1116/1.569902
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Energetic binary collisions in rare gas plasmas
R. S. Robinson
J. Vac. Sci. Technol. 16, 185–188 (1979) https://doi.org/10.1116/1.569903
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Silicon nitride layers on gallium arsenide by low‐energy ion beam sputtering
L. E. Bradley; J. R. Sites
J. Vac. Sci. Technol. 16, 189–192 (1979) https://doi.org/10.1116/1.569904
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Chemical vapor deposition of spectrally selective surfaces for high‐temperature photothermal conversion
B. O. Seraphin
J. Vac. Sci. Technol. 16, 193–196 (1979) https://doi.org/10.1116/1.569905
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Magnetron sputter coating of microspherical substrates
A. T. Lowe; C. D. Hosford
J. Vac. Sci. Technol. 16, 197–199 (1979) https://doi.org/10.1116/1.569906
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Copper sulfide films deposited by cylindrical magnetron reactive sputtering
Arthur D. Jonath; William W. Anderson; John A. Thornton; David G. Cornog
J. Vac. Sci. Technol. 16, 200–203 (1979) https://doi.org/10.1116/1.569907
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Corrosion inhibition in sputter‐deposited thin‐film systems using an intermediary layer of palladium
D. J. Sharp
J. Vac. Sci. Technol. 16, 204–207 (1979) https://doi.org/10.1116/1.569908
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Electrical properties of sputtered epitaxial films of GaAs
R. J. Soukup; A. K. Kulkarni; D. M. Mosher
J. Vac. Sci. Technol. 16, 208–211 (1979) https://doi.org/10.1116/1.569909
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Formation of thin Cu2S (chalcocite) films using reactive sputtering techniques
G. A. Armantrout; D. E. Miller; K. E. Vindelov; T. G. Brown
J. Vac. Sci. Technol. 16, 212–215 (1979) https://doi.org/10.1116/1.569910
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Abstract: In situ analysis of plasma‐grown oxides using a spectroscopic ellipsometer
J. B. Theeten; R. P. H. Chang; T. E. Adams
J. Vac. Sci. Technol. 16, 216 (1979) https://doi.org/10.1116/1.569911
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Structure and epitaxy of evaporated cadmium selenide films
H. M. Naguib; H. Nentwich; W. D. Westwood
J. Vac. Sci. Technol. 16, 217–221 (1979) https://doi.org/10.1116/1.569912
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Technique to determine the growth rate and resistivity of evaporated CdS thin films
N. K. Annamalai; C. C. Chao; D. Raymond
J. Vac. Sci. Technol. 16, 222–225 (1979) https://doi.org/10.1116/1.569913
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Preparation and properties of transparent conducting indium films
D. K. Murti
J. Vac. Sci. Technol. 16, 226–229 (1979) https://doi.org/10.1116/1.569914
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Effects of vacuum processing erbium dideuteride/ditritide films deposited on chromium underlays on copper substrates
J. L. Provo
J. Vac. Sci. Technol. 16, 230–232 (1979) https://doi.org/10.1116/1.569915
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Relationship of optical degradation to surface morphology changes in solar absorbers
G. Zajac; A. Ignatiev
J. Vac. Sci. Technol. 16, 233–235 (1979) https://doi.org/10.1116/1.569916
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Effect of grain boundaries on the performance of polycrystalline tunnel MIS solar cells
R. Singh; T. N. Bhar; J. Shewchun; J. J. Loferski
J. Vac. Sci. Technol. 16, 236–239 (1979) https://doi.org/10.1116/1.569917
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Conduction processes and threshold switching in amorphous Si films
S. K. Dey; W. T. J. Fong
J. Vac. Sci. Technol. 16, 240–243 (1979) https://doi.org/10.1116/1.569918
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Apparatus for simultaneous measurement of mass change, optical transmittance, and reflectance of thin films
E. T. Prince; H. F. Helbig; A. W. Czanderna
J. Vac. Sci. Technol. 16, 244–247 (1979) https://doi.org/10.1116/1.569919
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H+ and D+ sputtering of thin tantalum films in the energy range of 0.6 to 15 keV
Charles H. Meyer, Jr.; Joe N. Smith, Jr.
J. Vac. Sci. Technol. 16, 248–250 (1979) https://doi.org/10.1116/1.569920
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Application of matrix isolation spectroscopy to the measurement of sputtering yields
Christoph Steinbrüchel; Dieter M. Gruen; Jane Dawson
J. Vac. Sci. Technol. 16, 251–254 (1979) https://doi.org/10.1116/1.569921
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Some limitations on electron beam lithography
A. V. Crewe
J. Vac. Sci. Technol. 16, 255–259 (1979) https://doi.org/10.1116/1.569922
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Issues in fabricating electron devices with submicrometer dimensions
R. C. Henderson; D. C. Mayer; J. G. Nash
J. Vac. Sci. Technol. 16, 260–268 (1979) https://doi.org/10.1116/1.569923
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Materials and techniques used in nanostructure fabrication
W. W. Molzen; A. N. Broers; J. J. Cuomo; J. M. E. Harper; R. B. Laibowitz
J. Vac. Sci. Technol. 16, 269–272 (1979) https://doi.org/10.1116/1.569924
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Abstract: Fundamentals of MBE
J. R. Arthur
J. Vac. Sci. Technol. 16, 273–274 (1979) https://doi.org/10.1116/1.569925
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Recent developments in molecular beam epitaxy (MBE)
A. Y. Cho
J. Vac. Sci. Technol. 16, 275–284 (1979) https://doi.org/10.1116/1.569926
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Substrate effect on the lattice constants of the MBE‐grown In1−xGaxAs and GaSb1−yAsy
Chin‐An Chang; Armin Segmüller
J. Vac. Sci. Technol. 16, 285–286 (1979) https://doi.org/10.1116/1.569927
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Growth of CuInSe2 films using molecular beam epitaxy
F. R. White; A. H. Clark; M. C. Graf; S. P. Grindle; L. L. Kazmerski
J. Vac. Sci. Technol. 16, 287–289 (1979) https://doi.org/10.1116/1.569928
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MBE‐grown insulating oxide films on GaAs
K. Ploog; A. Fischer; R. Trommer; M. Hirose
J. Vac. Sci. Technol. 16, 290–294 (1979) https://doi.org/10.1116/1.569929
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Double epitaxy and the growth of polymorphic films of thallium iodide (TlI) on potassium chloride (KCl)
T. J. Moravec; R. A. Skogman; W. T. Boord
J. Vac. Sci. Technol. 16, 295–298 (1979) https://doi.org/10.1116/1.569930
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Reactive sputtering of carbon and carbide targets in nitrogen
J. J. Cuomo; P. A. Leary; D. Yu; W. Reuter; M. Frisch
J. Vac. Sci. Technol. 16, 299–302 (1979) https://doi.org/10.1116/1.569931
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Ultrathin metal oxide layers by reactive sputtering: their controlled deposition and characterization
T. M. Reith; P. J. Ficalora
J. Vac. Sci. Technol. 16, 303–306 (1979) https://doi.org/10.1116/1.569932
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Effects of deposition parameters on optical loss for rf‐sputtered Ta2O5 and Si3N4 waveguides
W. M. Paulson; F. S. Hickernell; R. L. Davis
J. Vac. Sci. Technol. 16, 307–310 (1979) https://doi.org/10.1116/1.569933
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Characterization of amorphous barium titanate films prepared by rf sputtering
D. J. McClure; J. R. Crowe
J. Vac. Sci. Technol. 16, 311–314 (1979) https://doi.org/10.1116/1.569934
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Radio‐frequency‐sputtered tetragonal barium titanate films on silicon
Janda K. G. Panitz; Cheng‐Cheng Hu
J. Vac. Sci. Technol. 16, 315–318 (1979) https://doi.org/10.1116/1.569935
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Abstract: Properties of planar‐magnetron‐sputtered tantalum films
M H. Rottersman; M. J. Bill
J. Vac. Sci. Technol. 16, 319 (1979) https://doi.org/10.1116/1.569936
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Abstract: Investigation of MoSi2 as an interconnect conductor for MOS devices
D. R. Denison
J. Vac. Sci. Technol. 16, 320 (1979) https://doi.org/10.1116/1.569937
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Ion bombardment effects on elemental incorporation probabilities during sputter deposition of GaSb and InSb
A. H. Eltoukhy; S. A. Barnett; J. E. Greene
J. Vac. Sci. Technol. 16, 321–323 (1979) https://doi.org/10.1116/1.569938
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Surface cesium concentrations in cesium‐ion‐bombarded elemental and compound targets
J. E. Chelgren; W. Katz; V. R. Deline; C. A. Evans, Jr.; R. J. Blattner; P. Williams
J. Vac. Sci. Technol. 16, 324–327 (1979) https://doi.org/10.1116/1.569939
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Contact resistance response surface of sintered Al films on (100) silicon
Lewis C. Hecht
J. Vac. Sci. Technol. 16, 328–330 (1979) https://doi.org/10.1116/1.569940
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Complex impedance of copper films
Lorn L. Howard; Dee A. Turner
J. Vac. Sci. Technol. 16, 331–333 (1979) https://doi.org/10.1116/1.569941
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Abstract: Increasing the optical modulation of the transmission of low energy electrons by the deposition of copper phthalocyanine dye on Si(111)
S. C. Dahlberg; M. E. Musser
J. Vac. Sci. Technol. 16, 334 (1979) https://doi.org/10.1116/1.569942
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Direct‐current glow discharge furnace for high‐rate carburzing
William L. Grube
J. Vac. Sci. Technol. 16, 335–338 (1979) https://doi.org/10.1116/1.569943
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Interdiffusion of Al and Cr thin films
M. B. Chamberlain
J. Vac. Sci. Technol. 16, 339–341 (1979) https://doi.org/10.1116/1.569944
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TEM study of the two‐step annealing of arsenic‐implanted 〈100〉 silicon
E. I. Alessandrini; W. K. Chu; M. R. Poponiak
J. Vac. Sci. Technol. 16, 342–344 (1979) https://doi.org/10.1116/1.569945
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Effect of high‐temperature, postoxidation annealing on the electrical properties of the Si–SiO2 interface
M. Revitz; S. I. Raider; R. A. Gdula
J. Vac. Sci. Technol. 16, 345–347 (1979) https://doi.org/10.1116/1.569946
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Adhesion of copper films on ABS polymers deposited in an internal magnet magnetron sputtering system
Tsutomu Tsukada; Naokichi Hosokawa
J. Vac. Sci. Technol. 16, 348–351 (1979) https://doi.org/10.1116/1.569947
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Adhesion of thin films of evaporated titanium–copper after electroplating
C. T. Kemmerer; R. H. Mills
J. Vac. Sci. Technol. 16, 352–355 (1979) https://doi.org/10.1116/1.569948
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Function stress testing in large‐scale optical multifilm manufacturing
Steven H. Leece
J. Vac. Sci. Technol. 16, 356–358 (1979) https://doi.org/10.1116/1.569949
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Interface composition and adhesion of glow‐discharge‐formed organo–tin polymers
Erich Kny; Leonard L. Levenson; William J. James; Robert A. Auerbach
J. Vac. Sci. Technol. 16, 359–362 (1979) https://doi.org/10.1116/1.569950
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Copper–polyvinyl alcohol interface: A study with XPS
James M. Burkstrand
J. Vac. Sci. Technol. 16, 363–365 (1979) https://doi.org/10.1116/1.569951
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Simultaneous RHEED–AES–QMS study on epitaxial Si film growth on Si(111) and sapphire (1̄102) surfaces by partially ionized vapour deposition
T. Narusawa; S. Shimizu; S. Komiya
J. Vac. Sci. Technol. 16, 366–368 (1979) https://doi.org/10.1116/1.569952
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Effects of sputter etching and process techniqes on the properties of sputtered aluminum films
Paul S. McLeod; John L. Hughes
J. Vac. Sci. Technol. 16, 369–376 (1979) https://doi.org/10.1116/1.569953
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Preferential lateral chemical etching in reactive ion etching of aluminum and aluminum alloys
P. M. Schaible; G. C. Schwartz
J. Vac. Sci. Technol. 16, 377–380 (1979) https://doi.org/10.1116/1.569954
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Sputter etching in an argon–oxygen plasma and its implications to device fabrication
S. Krongelb; L. T. Romankiw
J. Vac. Sci. Technol. 16, 381–384 (1979) https://doi.org/10.1116/1.569955
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End‐point determination of aluminum reactive ion etching by discharge impedance monitoring
K. Ukai; K. Hanazawa
J. Vac. Sci. Technol. 16, 385–387 (1979) https://doi.org/10.1116/1.569956
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Simulation of plasma‐etched lithographic structures
N. S. Viswanathan
J. Vac. Sci. Technol. 16, 388–390 (1979) https://doi.org/10.1116/1.569957
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Plasma etching—A discussion of mechanisms
J. W. Coburn; Harold F. Winters
J. Vac. Sci. Technol. 16, 391–403 (1979) https://doi.org/10.1116/1.569958
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Reactant supply in reactive ion etching
John L. Mauer; Joseph S. Logan
J. Vac. Sci. Technol. 16, 404–406 (1979) https://doi.org/10.1116/1.569959
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Abstract: Some chemical aspects of the fluorocarbon plasma etching of silicon and its compounds
J. W. Coburn; E. Kay
J. Vac. Sci. Technol. 16, 407 (1979) https://doi.org/10.1116/1.569960
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Abstract: Plasma‐assisted etching for pattern transfer
C. J. Mogab; W. R. Harshbarger
J. Vac. Sci. Technol. 16, 408–409 (1979) https://doi.org/10.1116/1.569961
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Reactive ion etching of silicon
G. C. Schwartz; P. M. Schaible
J. Vac. Sci. Technol. 16, 410–413 (1979) https://doi.org/10.1116/1.569962
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Plasma chemistry
W. F. Libby
J. Vac. Sci. Technol. 16, 414–417 (1979) https://doi.org/10.1116/1.569963
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Abstract: Fundamentals of plasma chemistry
Alexis T. Bell
J. Vac. Sci. Technol. 16, 418–419 (1979) https://doi.org/10.1116/1.569964
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Plasma‐promoted deposition of thin inorganic films
Myron J. Rand
J. Vac. Sci. Technol. 16, 420–427 (1979) https://doi.org/10.1116/1.569965
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Metal‐containing plasma polymerized fluorocarbon films—their synthesis, structure, and polymerization mechanism
E. Kay; A. Dilks
J. Vac. Sci. Technol. 16, 428–430 (1979) https://doi.org/10.1116/1.569966
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Abstract: Laser chemical vapor deposition of metals and insulators
S. D. Allen; M. Bass
J. Vac. Sci. Technol. 16, 431 (1979) https://doi.org/10.1116/1.569967
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Abstract: Surface science and catalysis: The catalytic methanation reaction
Theodore E. Madey; D. Wayne Goodman; Richard D. Kelley
J. Vac. Sci. Technol. 16, 433–434 (1979) https://doi.org/10.1116/1.569968
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Abstract: Chemisorption of CO and NO on Rh(110)
R. J. Baird; R. C. Ku; P. Wynblatt
J. Vac. Sci. Technol. 16, 435 (1979) https://doi.org/10.1116/1.569969
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Abstract: Oxidation of carbon on Ni(110)
Radhesyam Sau; John B. Hudson
J. Vac. Sci. Technol. 16, 436–437 (1979) https://doi.org/10.1116/1.569970
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Abstract: Adsorption of oxygen on Rh(111)
Patricia A. Thiel; J. T. Yates, Jr.; W. H. Weinberg
J. Vac. Sci. Technol. 16, 438–439 (1979) https://doi.org/10.1116/1.569971
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Abstract: Chemisorption of oxygen on the (110) surface of iridium
D. E. Ibbotson; J. L. Taylor; W. H. Weinberg
J. Vac. Sci. Technol. 16, 439–440 (1979) https://doi.org/10.1116/1.569972
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An ELS vibrational study of carbon monoxide adsorbed on the Cu(110) surface
J. F. Wendelken; M. V. K. Úlehla
J. Vac. Sci. Technol. 16, 441–444 (1979) https://doi.org/10.1116/1.569973
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Abstract: Adsorption sites of CO on Ni(111) as determined by infrared reflection–absorption spectroscopy
Juan Carlos Campuzano; Robert G. Greenler
J. Vac. Sci. Technol. 16, 445 (1979) https://doi.org/10.1116/1.569974
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Abstract: Oxygen on Pd(111): A study by photoemission and thermal desorption
D. L. Weissman; M. L. Shek; W. E. Spicer
J. Vac. Sci. Technol. 16, 445–446 (1979) https://doi.org/10.1116/1.569975
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Lateral interactions in adsorbed layers
A. M. Bradshaw; M. Scheffler
J. Vac. Sci. Technol. 16, 447–454 (1979) https://doi.org/10.1116/1.569976
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Abstract: Photoemission studies of H2S, H2, and S adsorbed on Ru(110): Evidence for an adsorbed SH species
Galen B. Fisher
J. Vac. Sci. Technol. 16, 455–456 (1979) https://doi.org/10.1116/1.569977
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Abstract: Interaction of H2S with the Ru(001) surface
S. R. Kelemen; T. E. Fischer
J. Vac. Sci. Technol. 16, 456 (1979) https://doi.org/10.1116/1.569978
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Abstract: Co on Pt(111) studied by photoemission and high resolution dynamic measurements of work function
P. R. Norton; E. B. Selkirk; J. W. Goodale
J. Vac. Sci. Technol. 16, 457 (1979) https://doi.org/10.1116/1.569979
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Abstract: Condensation and compression of argon monolayers on graphite
Christopher G. Shaw; Samuel C. Fain, Jr
J. Vac. Sci. Technol. 16, 458 (1979) https://doi.org/10.1116/1.569980
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Raman scattering from carbon monoxide adsorbed on evaporated silver films
Thomas H. Wood; Miles V. Klein
J. Vac. Sci. Technol. 16, 459–461 (1979) https://doi.org/10.1116/1.569981
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Thermal decomposition of nickel carbide: an Auger lineshape study
M. A. Smith; S. Sinharoy; L. L. Levenson
J. Vac. Sci. Technol. 16, 462–465 (1979) https://doi.org/10.1116/1.569982
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Apparatus for Mössbauer effect emission and AES study of free surfaces
C. R. Anderson; B. G. Richards; R. W. Hoffman
J. Vac. Sci. Technol. 16, 466–468 (1979) https://doi.org/10.1116/1.569983
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Abstract: Surface structure studies by Rutherford backscattering and LEED
P. R. Norton
J. Vac. Sci. Technol. 16, 469 (1979) https://doi.org/10.1116/1.569984
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Adatom bonding effects from coverage‐dependent angle‐resolved photoemission: Ag(001)+Cl
S. P. Weeks; J. E. Rowe
J. Vac. Sci. Technol. 16, 470–473 (1979) https://doi.org/10.1116/1.569985
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Oxygen interaction with Ni/Fe surfaces (1) LEED and XPS studies of Ni 76%/Fe 24% (100)
C. R. Brundle; E. Silverman; R. J. Madix
J. Vac. Sci. Technol. 16, 474–477 (1979) https://doi.org/10.1116/1.569986
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Adlayer‐induced LEED beams near order–disorder transitions
L. D. Roelofs; Robert L. Park; T. L. Einstein
J. Vac. Sci. Technol. 16, 478–482 (1979) https://doi.org/10.1116/1.569987
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Abstract: Modulated surface plasmon resonance for adsorption studies
C. F. Eagen; W. H. Weber; B. D. Pointexter
J. Vac. Sci. Technol. 16, 483 (1979) https://doi.org/10.1116/1.569988
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Abstract: Chlorine adsorption on the low index surfaces of silver: Energetics and structures
Yung‐Yi Tu; J. M. Blakely
J. Vac. Sci. Technol. 16, 484 (1979) https://doi.org/10.1116/1.569989
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Adsorption and decomposition of methanol on aluminum
J. W. Rogers, Jr.; J. M. White
J. Vac. Sci. Technol. 16, 485–488 (1979) https://doi.org/10.1116/1.569990
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Oxide formation on ruthenium observed by TDS and ESCA
Ralph Klein; Roy Siegel; Nils E. Erickson
J. Vac. Sci. Technol. 16, 489–491 (1979) https://doi.org/10.1116/1.569991
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Abstract: MeV ion scattering studies of the reconstruction of the W(001) surface and its reordering by hydrogen adsorption
I. Stensgaard; L. C. Feldman; P. J. Silverman
J. Vac. Sci. Technol. 16, 492 (1979) https://doi.org/10.1116/1.569992
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Abstract: Identification of small bimetallic particles by controlled atmosphere electron microscopy
R. T. K. Baker; R. D. Sherwood; J. A. Dumesic
J. Vac. Sci. Technol. 16, 493 (1979) https://doi.org/10.1116/1.569993
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Abstract: Catalytic reaction between adsorbed oxygen and hydrogen on Rh(111)
J. T. Yates, Jr; Patricia A. Thiel; W. H. Weinberg
J. Vac. Sci. Technol. 16, 494–495 (1979) https://doi.org/10.1116/1.569994
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Abstract: Infrared chemiluminescence from surface reactions
T. J. Chuang
J. Vac. Sci. Technol. 16, 496 (1979) https://doi.org/10.1116/1.570018
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AES study of oxidation of surface and bulk sulfides of Ni
H. Windawi; J. R. Katzer
J. Vac. Sci. Technol. 16, 497–502 (1979) https://doi.org/10.1116/1.570019
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Steam‐enhanced calcium segregation in dense alumina
S. Sinharoy; L. L. Levenson; D. E. Day
J. Vac. Sci. Technol. 16, 503–506 (1979) https://doi.org/10.1116/1.570020
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Initial and final state effects in the photoionization spin–orbit branching ratio of core levels
G. Margaritondo; F. Cerrina; G. P. Williams; G. J. Lapeyre
J. Vac. Sci. Technol. 16, 507–509 (1979) https://doi.org/10.1116/1.570021
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Factors contributing to the Si L23VV, Si L1L23V and O KVV Auger lineshape in SiO2
D. E. Ramaker; J. S. Murday
J. Vac. Sci. Technol. 16, 510–513 (1979) https://doi.org/10.1116/1.570022
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Surface composition and characteristics of oxide‐free Ga1–xAlxAs (110) Schottky barriers
B. W. Lee; L. Jou; P. Mark; J. L. Yeh; E. So
J. Vac. Sci. Technol. 16, 514–516 (1979) https://doi.org/10.1116/1.570023
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Abstract: Characterization of InN, In2O3, and In oxy‐nitride semiconducting thin films using XPS electron energy loss spectra
T. L. Barr; B. R. Natarajan; A. H. Eltoukhy; J. E. Greene
J. Vac. Sci. Technol. 16, 517 (1979) https://doi.org/10.1116/1.570024
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Abstract: Electron desorption of positive and negative oxygen ions from oxygen‐covered Mo(100) surfaces
M. L. Yu
J. Vac. Sci. Technol. 16, 518 (1979) https://doi.org/10.1116/1.570025
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Abstract: Static SIMS of amino acid overlayers
R. J. Colton; J. S. Murday
J. Vac. Sci. Technol. 16, 519 (1979) https://doi.org/10.1116/1.570026
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Angular‐dependent ultraviolet photoemission spectroscopy of polycrystalline films: A probe of surface electronic structure
S. P. Kowalczyk
J. Vac. Sci. Technol. 16, 520–522 (1979) https://doi.org/10.1116/1.570027
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Diffraction features in secondary electron emission
H. V. Thapliyal; W. N. Unertl
J. Vac. Sci. Technol. 16, 523–526 (1979) https://doi.org/10.1116/1.570028
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Abstract: Effect of electron beam on glass surface analysis by AES
F. Ohuchi; M. Ogino; P. H. Holloway; C. G. Pantano, Jr
J. Vac. Sci. Technol. 16, 527 (1979) https://doi.org/10.1116/1.570029
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4f core threshold effects in photoemission from Pt
G. P. Williams; G. J. Lapeyre; J. Anderson; R. E. Dietz; Y. Yafet
J. Vac. Sci. Technol. 16, 528–530 (1979) https://doi.org/10.1116/1.570030
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Theoretical studies of nickel clusters and chemisorption of hydrogen
Thomas H. Upton; William A. Goddard III; Carl F. Melius
J. Vac. Sci. Technol. 16, 531–536 (1979) https://doi.org/10.1116/1.570031
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Abstract: Surface‐EXAFS studies of iodine adsorbed on Cu(111), Cu(110), and Ag(111) single‐crystal substrates
P. H. Citrin; P. Eisenberger; R. C. Hewitt; H. H. Farrell
J. Vac. Sci. Technol. 16, 537 (1979) https://doi.org/10.1116/1.570032
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Abstract: Surface and interface study by derivative surface photovoltage spectroscopy: GaAs
J. Lagowski; M. M. G. Slusarczuk; W. Walukiewicz; H. C. Gatos
J. Vac. Sci. Technol. 16, 538 (1979) https://doi.org/10.1116/1.570033
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Abstract: Ultraviolet photon‐induced secondary electron emission from TiO2: Theory and experiment
R. H. Tait; A. Suna; G. C. Chiang
J. Vac. Sci. Technol. 16, 539–540 (1979) https://doi.org/10.1116/1.570034
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Order–disorder transition of oxygen on (111) nickel
A. R. Kortan; P. I. Cohen; Robert L. Park
J. Vac. Sci. Technol. 16, 541–545 (1979) https://doi.org/10.1116/1.570035
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Abstract: Surface photoemission on Cu(110)
Eberhard Dietz; Frank J. Himpsel
J. Vac. Sci. Technol. 16, 546 (1979) https://doi.org/10.1116/1.570036
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Abstract: Desorption kinetics of one‐ and two‐step mechanisms
Christoph Steinbrüchel
J. Vac. Sci. Technol. 16, 547 (1979) https://doi.org/10.1116/1.570037
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Use of SIMS for studies of adsorption on well‐defined metal surfaces (1) Combined XPS/LEED/SIMS studies of O2, CO, H2O, and H2 on Ni (100)
H. Hopster; C. R. Brundle
J. Vac. Sci. Technol. 16, 548–551 (1979) https://doi.org/10.1116/1.570038
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Abstract: Similar surface structures for CO and N2 absorbed on W(210)
A. Ignatiev; H. B. Nielsen; D. L. Adams
J. Vac. Sci. Technol. 16, 552 (1979) https://doi.org/10.1116/1.570039
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Abstract: Isothermal ramped field desorption of benzene from tungsten
J. A. Panitz
J. Vac. Sci. Technol. 16, 553 (1979) https://doi.org/10.1116/1.570040
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Energy transfer effects in surface diffusion
R. I. Masel
J. Vac. Sci. Technol. 16, 554–557 (1979) https://doi.org/10.1116/1.569995
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AES study of the adsorption of O2, CO, CO2, and H2O on indium
S. M. Rossnagel; H. F. Dylla; S. A. Cohen
J. Vac. Sci. Technol. 16, 558–561 (1979) https://doi.org/10.1116/1.569996
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High‐resolution LMM Auger spectra from argon implanted in Be and Si
D. M. Zehner; H. H. Madden
J. Vac. Sci. Technol. 16, 562–565 (1979) https://doi.org/10.1116/1.569997
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Abstract: Thermodynamics of sulfur chemisorption on transition metals
J. G. McCarty; H. Wise; B. J. Wood
J. Vac. Sci. Technol. 16, 566 (1979) https://doi.org/10.1116/1.569998
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Characterization of a sulfur‐resistant methanation catalyst by XPS.
R. B. Shalvoy; P. J. Reucroft
J. Vac. Sci. Technol. 16, 567–569 (1979) https://doi.org/10.1116/1.569999
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Chemisorption studies of chlorine and fluorine on the silicon (111) surface
M. Chen; Inder P. Batra
J. Vac. Sci. Technol. 16, 570–573 (1979) https://doi.org/10.1116/1.570000
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Ionization of liquid metals, gallium
R. J. Culbertson; T. Sakurai; G. H. Robertson
J. Vac. Sci. Technol. 16, 574–576 (1979) https://doi.org/10.1116/1.570001
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UPS Studies of H2, O2, and CO adsorption on ordered carbon overlayers on W(100)
P. M. Stefan; C. R. Helms; S. C. Perino; W. E. Spicer
J. Vac. Sci. Technol. 16, 577–580 (1979) https://doi.org/10.1116/1.570002
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Oxygen chemisorption on Bi (0001): LEED/Auger/loss study
T. N. Taylor; J. W. Rogers, Jr.; W. P. Ellis
J. Vac. Sci. Technol. 16, 581–583 (1979) https://doi.org/10.1116/1.570003
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Semidynamical RFS technique for LEED analysis, with an application to GaAs(110)
Gerardo Cisneros
J. Vac. Sci. Technol. 16, 584–586 (1979) https://doi.org/10.1116/1.570004
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LEED analysis of the reconstructed Au(110) surface
J. R. Noonan; H. L. Davis
J. Vac. Sci. Technol. 16, 587–589 (1979) https://doi.org/10.1116/1.570005
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Emission of neutral particles from anodized aluminum surfaces during tensile deformation
L. A. Larson; J. T. Dickinson; P. F. Bräunlich; D. B. Snyder
J. Vac. Sci. Technol. 16, 590–593 (1979) https://doi.org/10.1116/1.570006
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Bonding geometry and electronic structure of the chalcogens on Ni(111)
T. Weston Capehart; Thor N. Rhodin
J. Vac. Sci. Technol. 16, 594–598 (1979) https://doi.org/10.1116/1.570007
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Abstract: Low energy electron diffraction studies of the surfaces of molecular crystals (ice, ammonia, naphthalene, benzene)
L. E. Firment; G. A. Somorjai
J. Vac. Sci. Technol. 16, 599 (1979) https://doi.org/10.1116/1.570008
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Chemical characterization from carbon Auger spectra by application of pattern recognition and factor analysis
Stephen W. Gaarenstroom
J. Vac. Sci. Technol. 16, 600–604 (1979) https://doi.org/10.1116/1.570009
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Carbon monoxide oxidation reaction over Rh
Charles T. Campbell; Shei‐Kung Shi; J. M. White
J. Vac. Sci. Technol. 16, 605–607 (1979) https://doi.org/10.1116/1.570010
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Morphology and electronic structure of Si–SiO2 interfaces and Si surfaces
C. R. Helms
J. Vac. Sci. Technol. 16, 608–614 (1979) https://doi.org/10.1116/1.570011
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Chemisorption of Cl in surface vacancies on Si(111) 1×1
M. Schlüter; J. E. Rowe; S. P. Weeks; S. B. Christman
J. Vac. Sci. Technol. 16, 615–617 (1979) https://doi.org/10.1116/1.570012
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AES investigation of the chemical structure of silicon oxy‐nitride films
H. H. Madden; P. H. Holloway
J. Vac. Sci. Technol. 16, 618–621 (1979) https://doi.org/10.1116/1.570013
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Nucleation, growth, and postdeposition thermally induced epitaxy of gold on sapphire
K. Heinemann; H. K. Kim; H. Poppa
J. Vac. Sci. Technol. 16, 622–624 (1979) https://doi.org/10.1116/1.570014
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Abstract: Density of empty states in GeSe(001) and GeS(001)
G. D. Davis; P. E. Viljoen; M. G. Lagally; J. E. Rowe
J. Vac. Sci. Technol. 16, 625 (1979) https://doi.org/10.1116/1.570015
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Photoillumination effect on silicon field ion microscopy
Toshio Sakurai; R. J. Culbertson; A. J. Melmed
J. Vac. Sci. Technol. 16, 626–628 (1979) https://doi.org/10.1116/1.570016
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Particle ejection from ion‐bombarded clean and reacted single‐crystal surfaces
N. Winograd; B. J. Garrison; T. Fleisch; W. N. Delgass; D. E. Harrison, Jr.
J. Vac. Sci. Technol. 16, 629–634 (1979) https://doi.org/10.1116/1.570017
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Chemisorption and phase changes on W(100) and Mo(100)
Peder J. Estrup
J. Vac. Sci. Technol. 16, 635–641 (1979) https://doi.org/10.1116/1.570041
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Structural determination of the unreconstructed and the reconstructed (110) surfaces of iridium
C.‐M. Chan; K. L. Luke; M. A. Van Hove; W. H. Weinberg; E. D. Williams
J. Vac. Sci. Technol. 16, 642–645 (1979) https://doi.org/10.1116/1.570042
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Abstract: LEED measurement of substrate perfection in W(110)
M. G. Lagally; G.‐C. Wang
J. Vac. Sci. Technol. 16, 646 (1979) https://doi.org/10.1116/1.570043
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Analysis of ELEED intensities from ZnTe(110)
C. B. Duke; R. J. Meyer; A. Paton; P. Mark; E. So; J.‐L. Yeh
J. Vac. Sci. Technol. 16, 647–650 (1979) https://doi.org/10.1116/1.570044
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Abstract: Structures of sulphur adsorbed on Mo(001) from LEED analysis: Effect on adsorption of carbon monoxide
L. J. Clarke
J. Vac. Sci. Technol. 16, 651 (1979) https://doi.org/10.1116/1.570045
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Abstract: Resonancelike peaks in angle‐resolved ultraviolet photoemission of adsorbed species
S. Y. Tong; C. H. Li
J. Vac. Sci. Technol. 16, 652 (1979) https://doi.org/10.1116/1.570046
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Abstract: Core level binding energy and density of states from the first atomic layer of gold
P. H. Citrin; G. K. Wertheim; Y. Baer
J. Vac. Sci. Technol. 16, 653 (1979) https://doi.org/10.1116/1.570047
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Electronic surface resonance band structure and lineshapes
E. G. McRae
J. Vac. Sci. Technol. 16, 654–659 (1979) https://doi.org/10.1116/1.570048
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Abstract: Use of Fourier transforms for analyziang the extended fine structure above appearance potential thresholds
G. E. Laramore
J. Vac. Sci. Technol. 16, 660 (1979) https://doi.org/10.1116/1.570049
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Abstract: Growth of thin metal films on carbon
Gary G. Tibbetts; William F. Egelhoff, Jr.
J. Vac. Sci. Technol. 16, 661–662 (1979) https://doi.org/10.1116/1.570050
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Abstract: Surface composition of Pt/Rh alloys
Frank L. Williams; G. C. Nelson
J. Vac. Sci. Technol. 16, 663 (1979) https://doi.org/10.1116/1.570051
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Surface segregation in the Ag–Au and Pt–Cu systems
M. J. Kelley; D. G. Swartzfager; V. S. Sundaram
J. Vac. Sci. Technol. 16, 664–667 (1979) https://doi.org/10.1116/1.570052
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Surface activities of Mg in Al alloys
T. S. Sun; J. M. Chen; R. K. Viswanadham; J. A. S. Green
J. Vac. Sci. Technol. 16, 668–671 (1979) https://doi.org/10.1116/1.570053
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Abstract: Study of composition changes under ion eombardment in the scanning Auger microprobe
R. R. Olson; G. K. Wehner
J. Vac. Sci. Technol. 16, 672 (1979) https://doi.org/10.1116/1.570054
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Shiva and Argus target diagnostics vacuum systems
S. S. Glaros; S. E. Mayo; D. Campbell; D. Holeman
J. Vac. Sci. Technol. 16, 674–680 (1979) https://doi.org/10.1116/1.570055
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Validity of mass spectrometric measurements at pressures exceeding 10−4 mbar
W. K. Huber; G. Rettinghaus
J. Vac. Sci. Technol. 16, 681–684 (1979) https://doi.org/10.1116/1.570056
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Performance of a directional detector of molecular density
M. Kobayashi; Y. Tuzi
J. Vac. Sci. Technol. 16, 685–688 (1979) https://doi.org/10.1116/1.570057
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Direct‐molecular‐beam method for mass selective outgassing rate measurement
S. Komiya; Y. Sugiyama; M. Kobayashi; Y. Tuzi
J. Vac. Sci. Technol. 16, 689–691 (1979) https://doi.org/10.1116/1.570058
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Pioneer Venus large probe neutral mass spectrometer
J. H. Hoffman; R. R. Hodges; K. D. Duerksen
J. Vac. Sci. Technol. 16, 692–694 (1979) https://doi.org/10.1116/1.570059
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Heat of vaporization spectrometer
D. Edwards, Jr.
J. Vac. Sci. Technol. 16, 695–697 (1979) https://doi.org/10.1116/1.570060
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Tracer slug leak detection
B. C. Moore; J. A. Walker
J. Vac. Sci. Technol. 16, 698–700 (1979) https://doi.org/10.1116/1.570061
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UHV technique for intervacuum sample transfer
J. P. Hobson; E. V. Kornelsen
J. Vac. Sci. Technol. 16, 701–707 (1979) https://doi.org/10.1116/1.570062
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Versatile UHV sample transfer system
R. E. Clausing; L. Heatherly; L. C. Emerson
J. Vac. Sci. Technol. 16, 708–710 (1979) https://doi.org/10.1116/1.570063
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UHV system for the ultramicrogravimetric study of samples loaded in a controlled environment
R. Vasofsky; A. W. Czanderna; R. W. Thomas
J. Vac. Sci. Technol. 16, 711–715 (1979) https://doi.org/10.1116/1.570064
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Abstract: Water vapor sorption by cured commercial epoxies
R. Vasofsky; A. W. Czanderna; Karel K. Czanderna
J. Vac. Sci. Technol. 16, 716 (1979) https://doi.org/10.1116/1.570065
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Performance of vacuum components operating at 1×10−11 Torr
H. J. Halama
J. Vac. Sci. Technol. 16, 717–719 (1979) https://doi.org/10.1116/1.570066
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Vacuum system for national synchrotron light source
J. C. Schuchman; J. B. Godel; W. Jordan; T. Oversluizen
J. Vac. Sci. Technol. 16, 720–723 (1979) https://doi.org/10.1116/1.570067
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Turbomolecular pumps for high gas flow applications
J. F. O’Hanlon
J. Vac. Sci. Technol. 16, 724–727 (1979) https://doi.org/10.1116/1.570068
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Cryogenic versus turbomolecular pumping in a sputtering application
R. W. Dennison; G. R. Gray
J. Vac. Sci. Technol. 16, 728–730 (1979) https://doi.org/10.1116/1.570069
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Cryogenic pumping of helium, hydrogen, and a 90% hydrogen–10% helium mixture
C. F. Dillow; J. Palacios
J. Vac. Sci. Technol. 16, 731–733 (1979) https://doi.org/10.1116/1.570070
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Twenty‐kelvin cryopumping in magnetron sputtering systems
J. Visser; J. J. Scheer
J. Vac. Sci. Technol. 16, 734–737 (1979) https://doi.org/10.1116/1.570071
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Effects of thermal spikes on the characteristics of cryosorption pumps with condensed carbon dioxide layers
I. Arakawa; M. Kobayashi; Y. Tuzi
J. Vac. Sci. Technol. 16, 738–740 (1979) https://doi.org/10.1116/1.570072
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Oil backstreaming in turbomolecular and oil diffusion pumps
Louis Maurice; Pierre Duval; Guy Gorinas
J. Vac. Sci. Technol. 16, 741–745 (1979) https://doi.org/10.1116/1.570073
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Grease lubrication of turbomolecular vacuum pump bearings
G. E. Osterstrom; T. Knecht
J. Vac. Sci. Technol. 16, 746–747 (1979) https://doi.org/10.1116/1.570074
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UHV compatibility of two possible fusion reactor materials: K‐ramicR and ATJ graphite
Richard Moore
J. Vac. Sci. Technol. 16, 748–751 (1979) https://doi.org/10.1116/1.570075
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Observations of changes in residual gas and surface composition with discharge cleaning in PLT
H. F. Dylla; K. Bol; S. A. Cohen; R. J. Hawryluk; E. B. Meservey; S. M. Rossnagel
J. Vac. Sci. Technol. 16, 752–757 (1979) https://doi.org/10.1116/1.570076
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Ion and electron desorption of neutral molecules from stainless steel (304)
D. Edwards, Jr.
J. Vac. Sci. Technol. 16, 758–760 (1979) https://doi.org/10.1116/1.570077
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Synchrotron‐radiation‐induced heating effects in the PEP storage ring vacuum system
T. W. Martin
J. Vac. Sci. Technol. 16, 761–762 (1979) https://doi.org/10.1116/1.570078
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Residual gas analysis in the ISX‐A tokamak
J. E. Simpkins; R. J. Colchin; D. R. Overbey
J. Vac. Sci. Technol. 16, 763–765 (1979) https://doi.org/10.1116/1.570079
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Surface impurity studies in the ISX‐A tokamak
L. C. Emerson; R. E. Clausing; L. Heatherly
J. Vac. Sci. Technol. 16, 766–768 (1979) https://doi.org/10.1116/1.570080
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Abstract: Sputtering of multicomponent metal and semiconductor targets
Hans Henrik Andersen
J. Vac. Sci. Technol. 16, 770–771 (1979) https://doi.org/10.1116/1.570081
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Abstract: Preferred sputtering on binary alloy surfaces of the Al–Pd–Si system
J. E. Lewis; P. S. Ho
J. Vac. Sci. Technol. 16, 772–773 (1979) https://doi.org/10.1116/1.570082
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Sputter etching studies of Fe–Ni and Fe–Pd films
Wen‐Yaung Lee
J. Vac. Sci. Technol. 16, 774–777 (1979) https://doi.org/10.1116/1.570083
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Preferential sputtering in gold–nickel and gold–copper alloys
H. G. Tompkins
J. Vac. Sci. Technol. 16, 778–780 (1979) https://doi.org/10.1116/1.570084
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Model of ion knock‐on mixing with application to Si–SiO2 interface studies
S. A. Schwarz; C. R. Helms
J. Vac. Sci. Technol. 16, 781–783 (1979) https://doi.org/10.1116/1.570085
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Correlation of short‐range order and sputter dose in GaAs(110) using a vidicon‐based LEED system
D. G. Welkie; M. G. Lagally
J. Vac. Sci. Technol. 16, 784–788 (1979) https://doi.org/10.1116/1.570086
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Ejection of molecular clusters from ion‐bombarded surfaces
Barbara J. Garrison; Nicholas Winograd; Don E. Harrison, Jr.
J. Vac. Sci. Technol. 16, 789–792 (1979) https://doi.org/10.1116/1.570087
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Preferential sputtering of Ta2O5 by argon ions
P. H. Holloway; G. C. Nelson
J. Vac. Sci. Technol. 16, 793–796 (1979) https://doi.org/10.1116/1.570088
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Abstract: An XPS study of the chemical changes in oxide and hydroxide surfaces induced by Ar+ ion bombardment
T. J. Chuang; C. R. Brundle; K. Wandelt
J. Vac. Sci. Technol. 16, 797 (1979) https://doi.org/10.1116/1.570089
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Preferential sputtering in oxides as metals and revealed by x‐ray photoelectron spectroscopy
N. S. McIntyre; F. W. Stanchell
J. Vac. Sci. Technol. 16, 798–802 (1979) https://doi.org/10.1116/1.570090
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Abstract: Low energy ion beam system for materials studies
G. C. Nelson; J. A. Borders
J. Vac. Sci. Technol. 16, 803 (1979) https://doi.org/10.1116/1.570091
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Sputtering of two‐phase polycrystalline metals
P. F. Tortorelli; C. J. Altstetter
J. Vac. Sci. Technol. 16, 804–807 (1979) https://doi.org/10.1116/1.570092
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Abstract: Sputter yields of bimetal mixtures
W. K. Meyer; G. K. Wehner
J. Vac. Sci. Technol. 16, 808 (1979) https://doi.org/10.1116/1.570093
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Adhesive bonding of ion‐beam‐textured metals and fluoropolymers
Michael J. Mirtich; James S. Sovey
J. Vac. Sci. Technol. 16, 809–812 (1979) https://doi.org/10.1116/1.570094
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Ion beam sputtering of fluoropolymers
J. S. Sovey
J. Vac. Sci. Technol. 16, 813–816 (1979) https://doi.org/10.1116/1.570095
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