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Abstract: Properties of interfacial defects in III–V compound semiconductors
J. Vac. Sci. Technol. 13, 37 (1976)
https://doi.org/10.1116/1.568895
Abstract: Growth morphology and surface‐acoustic‐wave measurements of AlN films on sapphire
J. Vac. Sci. Technol. 13, 37–38 (1976)
https://doi.org/10.1116/1.568896
Abstract: Measurement of interfacial bond strength by laser spallation
J. Vac. Sci. Technol. 13, 38–39 (1976)
https://doi.org/10.1116/1.568925
XPS studies of surfaces and thin films of small‐band‐gap inorganic azides
J. Vac. Sci. Technol. 13, 45–47 (1976)
https://doi.org/10.1116/1.568943
Abstract: AES characterization of oxidized films of Mg, Al, and Si
J. Vac. Sci. Technol. 13, 48–49 (1976)
https://doi.org/10.1116/1.568905
Abstract: Stoichiometry of SiO2/Si interfacial regions. I. Ultrathin oxide films
J. Vac. Sci. Technol. 13, 58 (1976)
https://doi.org/10.1116/1.568955
Correlation between the composition profile and electrical conductivity of the thermal and anodic oxides of InSb
J. Vac. Sci. Technol. 13, 64–67 (1976)
https://doi.org/10.1116/1.568958
Kinetics of compound formation in thin film couples of Al and transition metals
J. Vac. Sci. Technol. 13, 68–71 (1976)
https://doi.org/10.1116/1.568959
Morphological and electrical properties of rf sputtered Y2O3‐doped ZrO2 thin films
J. Vac. Sci. Technol. 13, 72–75 (1976)
https://doi.org/10.1116/1.568960
UPS, ESCA, and Auger spectroscopy study of vacuum deposited silver halide films
J. Vac. Sci. Technol. 13, 107–111 (1976)
https://doi.org/10.1116/1.568873
Study of Al with a combined Auger electron spectrometer–ellipsometer system
J. Vac. Sci. Technol. 13, 112–115 (1976)
https://doi.org/10.1116/1.568874
Transparent conductive Sn‐doped indium oxide coatings deposited by reactive sputtering with a post cathode
J. Vac. Sci. Technol. 13, 117–121 (1976)
https://doi.org/10.1116/1.568876
Preparation and properties of adherent, transparent, conducting Rh films
J. Vac. Sci. Technol. 13, 122–126 (1976)
https://doi.org/10.1116/1.568804
Growth and properties of vacuum deposited CuInSe2 thin films
J. Vac. Sci. Technol. 13, 139–144 (1976)
https://doi.org/10.1116/1.568808
Properties of superconducting rf sputtered ultrathin films of Nb
J. Vac. Sci. Technol. 13, 145–147 (1976)
https://doi.org/10.1116/1.568809
Metallurgical considerations with respect to electrodes and interconnection lines for Josephson tunneling circuits
J. Vac. Sci. Technol. 13, 148–151 (1976)
https://doi.org/10.1116/1.568810
Ti–Cu–Ni–Au (TCNA) compatibility with resistor and bilevel crossover circuit processing
J. Vac. Sci. Technol. 13, 152–155 (1976)
https://doi.org/10.1116/1.568811
Abstract: AES study of the silicide formation in 85%Ni–15%Pt alloy films
J. Vac. Sci. Technol. 13, 156 (1976)
https://doi.org/10.1116/1.568812
Application of high‐rate E×B or magnetron sputtering in the metallization of semiconductor devices
J. Vac. Sci. Technol. 13, 157–164 (1976)
https://doi.org/10.1116/1.568813
In situ investigation of substrate surface recontamination during glow‐discharge sputter cleaning
J. Vac. Sci. Technol. 13, 170–174 (1976)
https://doi.org/10.1116/1.568816
Abstract: Physical vapor deposition of GaxIn1−xSb
J. Vac. Sci. Technol. 13, 175 (1976)
https://doi.org/10.1116/1.568817
Abstract: Steady state mass‐balance analysis of substrate‐biased rf sputtering
J. Vac. Sci. Technol. 13, 176 (1976)
https://doi.org/10.1116/1.568819
Semiconductor surface spectroscopy
J. Vac. Sci. Technol. 13, 178–182 (1976)
https://doi.org/10.1116/1.568820
Angular‐resolved Auger emission spectra from a clean Cu(100) surface
J. Vac. Sci. Technol. 13, 183–187 (1976)
https://doi.org/10.1116/1.568821
Abstract: Surface structure determination of the layered compounds MoS2 and NbSe2 by the dynamical LEED approach
J. Vac. Sci. Technol. 13, 188 (1976)
https://doi.org/10.1116/1.568822
Atomic geometry of the low‐index surfaces of ZnO: LEED analysis
J. Vac. Sci. Technol. 13, 189–192 (1976)
https://doi.org/10.1116/1.568823
Study of the spin polarization of field‐emitted electrons from magnetic materials
J. Vac. Sci. Technol. 13, 193–195 (1976)
https://doi.org/10.1116/1.568824
Abstract: Greater surface sensitivity of ion neutralization spectroscopy with respect to uv photoemission spectroscopy
J. Vac. Sci. Technol. 13, 196 (1976)
https://doi.org/10.1116/1.568847
Relative sputtering yields and quantitative surface analysis by Auger spectroscopy
J. Vac. Sci. Technol. 13, 198–203 (1976)
https://doi.org/10.1116/1.568849
Surface segregation in alloys: Equilibrium segregation of Au to the (111) surface of Ni
J. Vac. Sci. Technol. 13, 204–208 (1976)
https://doi.org/10.1116/1.568851
Alloy work functions: Extended Hückel calculations for Ag–Au and Cu–Au clusters
J. Vac. Sci. Technol. 13, 209–213 (1976)
https://doi.org/10.1116/1.568852
Quantitative Auger electron spectroscopy using elemental sensitivity factors
J. Vac. Sci. Technol. 13, 214–218 (1976)
https://doi.org/10.1116/1.568853
Abstract: Cross sections for ionization of inner‐shell electrons by electron impact
J. Vac. Sci. Technol. 13, 219–220 (1976)
https://doi.org/10.1116/1.568854
Photoemission studies of surface and interface states on III–V compounds
J. Vac. Sci. Technol. 13, 233–240 (1976)
https://doi.org/10.1116/1.568858
Abstract: Empty surface states on semiconductors: Their interactions with metal overlayers and their relation to Schottky barriers
J. Vac. Sci. Technol. 13, 250–252 (1976)
https://doi.org/10.1116/1.568861
Catalytic reactions on metal surfaces: A review of the recent contributions of surface science
J. Vac. Sci. Technol. 13, 253–258 (1976)
https://doi.org/10.1116/1.568862
Photoemission from some metals and semiconductors in the energy range 5–350 eV
J. Vac. Sci. Technol. 13, 269–272 (1976)
https://doi.org/10.1116/1.568866
Chemical identification of individual surface atoms in the atom probe
J. Vac. Sci. Technol. 13, 273–276 (1976)
https://doi.org/10.1116/1.568868
Relationship of heat of chemisorption to π‐ and σ‐level shifts as measured by photoemission
J. Vac. Sci. Technol. 13, 277–279 (1976)
https://doi.org/10.1116/1.568869
Chemisorption of O and H on the free‐electron‐like metals Al and Mg studied by photoelectron spectroscopy
J. Vac. Sci. Technol. 13, 280–282 (1976)
https://doi.org/10.1116/1.568826
Study of the N–Cu(100) system
J. Vac. Sci. Technol. 13, 291–295 (1976)
https://doi.org/10.1116/1.568830
Some aspects of an AES and XPS study of the adsorption of O2 on Ni
J. Vac. Sci. Technol. 13, 296–300 (1976)
https://doi.org/10.1116/1.568831
Abstract: Theoretical aspects of bonding in transition metal complexes and clusters
J. Vac. Sci. Technol. 13, 318 (1976)
https://doi.org/10.1116/1.568836
Surface photovoltage and electron energy‐loss spectroscopy of oxygen adsorbed on (112̄0) CdSe
J. Vac. Sci. Technol. 13, 325–328 (1976)
https://doi.org/10.1116/1.568838
Chemisorption and Schottky barrier formation of Ga on Si(111) 7×7
J. Vac. Sci. Technol. 13, 329–332 (1976)
https://doi.org/10.1116/1.568839
Abstract: Orbital shifts associated with chemical bonding of organic molecules on ZnO nonpolar surfaces
J. Vac. Sci. Technol. 13, 333 (1976)
https://doi.org/10.1116/1.568840
Abstract: SCF‐Xα‐SW calculation of electronic energy levels for methanol adsorbed on alumina
J. Vac. Sci. Technol. 13, 334 (1976)
https://doi.org/10.1116/1.568841
Elementary reactions on surfaces
J. Vac. Sci. Technol. 13, 335–342 (1976)
https://doi.org/10.1116/1.568843
Abstract: Can chemisorption bonding shifts be separated from relaxation‐energy shifts in photoelectron spectroscopy?
J. Vac. Sci. Technol. 13, 343–344 (1976)
https://doi.org/10.1116/1.568844
Semiclassical theories and quantum hardwall calculation of atom surface scattering
J. Vac. Sci. Technol. 13, 355–359 (1976)
https://doi.org/10.1116/1.568879
Abstract: Valence‐band density of states for Si and SiO2 using Auger electron spectroscopy
J. Vac. Sci. Technol. 13, 361 (1976)
https://doi.org/10.1116/1.568883
Abstract: Electronic properties of adsorbed layers of nitrogen, oxygen, and sulfur on copper (100)
J. Vac. Sci. Technol. 13, 362 (1976)
https://doi.org/10.1116/1.568885
Abstract: Metal interfaces: Adhesive energies and electronic barriers
J. Vac. Sci. Technol. 13, 362 (1976)
https://doi.org/10.1116/1.568886
Abstract: Transform‐deconvolution analysis of LEED: The structures of some clean metal surfaces
J. Vac. Sci. Technol. 13, 363 (1976)
https://doi.org/10.1116/1.568887
Abstract: SCF‐Xα‐SW ionization energies for chemisorbed chalcogens on Ni(001)
J. Vac. Sci. Technol. 13, 364–365 (1976)
https://doi.org/10.1116/1.568889
Abstract: Redeposition of sputtered species during ion etching of Cu, Ag, and Au
J. Vac. Sci. Technol. 13, 378 (1976)
https://doi.org/10.1116/1.568893
Redeposition of sputtered species by the electric fields of an incident ion beam and sputtered ion
J. Vac. Sci. Technol. 13, 379–383 (1976)
https://doi.org/10.1116/1.568894
Abstract: Repair and maintenance of vacuum‐deposition systems in a production environment
J. Vac. Sci. Technol. 13, 388 (1976)
https://doi.org/10.1116/1.568899
Abstract: Leak hunting problems associated with controlled thermonuclear fusion experiments
J. Vac. Sci. Technol. 13, 389 (1976)
https://doi.org/10.1116/1.568923
Abstract: Coupling of a mass spectrometer to a process control computer for deposition control of superconducting alloys
J. Vac. Sci. Technol. 13, 389–390 (1976)
https://doi.org/10.1116/1.568924
Effect of B, C, N, and Ne ion implantation on the oxidation of polycrystalline Cu
J. Vac. Sci. Technol. 13, 396–400 (1976)
https://doi.org/10.1116/1.568928
Abstract: Tritium diffusion in ceramic materials for thermonuclear reactors
J. Vac. Sci. Technol. 13, 401–402 (1976)
https://doi.org/10.1116/1.568929
Surface texturing by sputter etching
J. Vac. Sci. Technol. 13, 403–405 (1976)
https://doi.org/10.1116/1.568930
Effect of secondary electrons and negative ions on sputtering of films
J. Vac. Sci. Technol. 13, 406–409 (1976)
https://doi.org/10.1116/1.568931
Activation of thin film Zn2SiO4 phosphors using ion implantation techniques
J. Vac. Sci. Technol. 13, 410–413 (1976)
https://doi.org/10.1116/1.568933
AES compositional profiles of mobile ions in the surface region of glass
J. Vac. Sci. Technol. 13, 414–418 (1976)
https://doi.org/10.1116/1.568934
Measurement and modification of first‐wall surface composition in the Oak Ridge tokamak (ORMAK)
J. Vac. Sci. Technol. 13, 437–442 (1976)
https://doi.org/10.1116/1.568939
Abstract: (D, T) neutron radioactive sputtering yields
J. Vac. Sci. Technol. 13, 447–448 (1976)
https://doi.org/10.1116/1.568941
Thermal desorption of gases from aluminum alloy Al 6061, their rates and activation energies
J. Vac. Sci. Technol. 13, 463–466 (1976)
https://doi.org/10.1116/1.568944
Operating experience with an UHV system in the vicinity of a fission‐reactor core
J. Vac. Sci. Technol. 13, 467–471 (1976)
https://doi.org/10.1116/1.568945
Review of sticking coefficients and sorption capacities of gases on titanium films
J. Vac. Sci. Technol. 13, 471–474 (1976)
https://doi.org/10.1116/1.568900
Windowed discharge lamp for 16–70 eV
J. Vac. Sci. Technol. 13, 476–478 (1976)
https://doi.org/10.1116/1.568902
Surface analysis using complementary electronic and chemical measurements
J. Vac. Sci. Technol. 13, 479–486 (1976)
https://doi.org/10.1116/1.568903
Some measurements of Hg vapor pumping pressures in pairs of isotopic species
J. Vac. Sci. Technol. 13, 490–493 (1976)
https://doi.org/10.1116/1.568906
Integral Auger spectra via tailored modulation techniques
J. Vac. Sci. Technol. 13, 507–511 (1976)
https://doi.org/10.1116/1.568910
Abstract: Analysis of grain‐boundary diffusion in thin films: Chromium in gold
J. Vac. Sci. Technol. 13, 512 (1976)
https://doi.org/10.1116/1.568912
Abstract: Determination of the surface vs bulk composition of Ag/Au alloys by low‐energy ion‐scattering spectroscopy
J. Vac. Sci. Technol. 13, 512–513 (1976)
https://doi.org/10.1116/1.568913
Composition of binary alloys by simultaneous SIMS and AES measurements
J. Vac. Sci. Technol. 13, 514–518 (1976)
https://doi.org/10.1116/1.568914
Physical vapor deposition of thick Cr and its carbide and nitride films by hollow‐cathode discharge
J. Vac. Sci. Technol. 13, 520–524 (1976)
https://doi.org/10.1116/1.568915
Abstract: Ion‐plated oxide coatings for protection against corrosion
J. Vac. Sci. Technol. 13, 531 (1976)
https://doi.org/10.1116/1.568919
Synthesis of TiC–Ni cermets by the activated reactive evaporation process
J. Vac. Sci. Technol. 13, 532–535 (1976)
https://doi.org/10.1116/1.568920
Synthesis and characterization of yttrium oxide (Y2O3) deposits
J. Vac. Sci. Technol. 13, 536–539 (1976)
https://doi.org/10.1116/1.568921
Abstract: Vacuum microbalance investigations on the kinetics of the reduction of CdO with CO
J. Vac. Sci. Technol. 13, 542 (1976)
https://doi.org/10.1116/1.568946
Use of vacuum microbalances for determining physical adsorption isotherms of vapors on solids
J. Vac. Sci. Technol. 13, 543–548 (1976)
https://doi.org/10.1116/1.568947
Adsorption and desorption of water on Au by the quartz‐crystal‐oscillator method
J. Vac. Sci. Technol. 13, 549–551 (1976)
https://doi.org/10.1116/1.568948
Abstract: A system for studying the initial states of gas–metal reactions
J. Vac. Sci. Technol. 13, 552 (1976)
https://doi.org/10.1116/1.568949
Vacuum microbalance for determining sputtering yields operable in the vicinity of a magnetically confined, low‐pressure arc discharge
J. Vac. Sci. Technol. 13, 553–555 (1976)
https://doi.org/10.1116/1.568950
Photoelectrically automated, bakeable, high‐load ultramicrobalance
J. Vac. Sci. Technol. 13, 556–559 (1976)
https://doi.org/10.1116/1.568951
Abstract: Thermogravimetric device operating up to 2300 °C under controlled atmospheres
J. Vac. Sci. Technol. 13, 560 (1976)
https://doi.org/10.1116/1.568953