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Volume 21, Issue 4

November 1982

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ISSN 0022-5355

Auger and photoelectron line energy relationships in aluminum–oxygen and silicon–oxygen compounds

C. D. Wagner; D. E. Passoja; H. F. Hillery; T. G. Kinisky; H. A. Six; W. T. Jansen; J. A. Taylor

J. Vac. Sci. Technol. 21, 933–944 (1982) https://doi.org/10.1116/1.571870

Abstract

View articletitled, Auger and photoelectron line energy relationships in aluminum–oxygen and silicon–oxygen compounds

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Chlorine and hydrogen chloride on clean and oxygen‐covered Fe(100): Bonding and reactions

N. C. Debnath; Alfred B. Anderson

J. Vac. Sci. Technol. 21, 945–951 (1982) https://doi.org/10.1116/1.571871

Abstract

View articletitled, Chlorine and hydrogen chloride on clean and oxygen‐covered Fe(100): Bonding and reactions

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Growth and surface properties of lanthanum hexaboride crystals

Toru Inoue; Mitsuru Nakada; Takahiko Uozumi; Eizi Sugata

J. Vac. Sci. Technol. 21, 952–956 (1982) https://doi.org/10.1116/1.571872

Abstract

View articletitled, Growth and surface properties of lanthanum hexaboride crystals

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Si incorporation in Al_xGa_1−xAs grown by molecular beam epitaxy

T. J. Drummond; W. G. Lyons; R. Fischer; R. E. Thorne; H. Morkoç; C. G. Hopkins; C. A. Evans, Jr.

J. Vac. Sci. Technol. 21, 957–960 (1982) https://doi.org/10.1116/1.571873

Abstract

View articletitled, Si incorporation in AlxGa1−xAs grown by molecular beam epitaxy

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Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy

S. L. Su; R. E. Thorne; R. Fischer; W. G. Lyons; H. Morkoç

J. Vac. Sci. Technol. 21, 961–964 (1982) https://doi.org/10.1116/1.571874

Abstract

View articletitled, Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy

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Clustering and second‐neighbor interactions in semiconductor alloys

W. Porod; D. K. Ferry; K. A. Jones

J. Vac. Sci. Technol. 21, 965–968 (1982) https://doi.org/10.1116/1.571875

Abstract

View articletitled, Clustering and second‐neighbor interactions in semiconductor alloys

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Large grain CdTe thin films on Sb–Bi alloy‐coated Ta substrates

Nicola Romeo; Richard H. Bube

J. Vac. Sci. Technol. 21, 969–971 (1982) https://doi.org/10.1116/1.571876

Abstract

View articletitled, Large grain CdTe thin films on Sb–Bi alloy‐coated Ta substrates

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Deposition rate dependence of the critical optimization temperature for thin film properties: Evidence for the disordered area reevaporation mechanism

P. S. Vincett

J. Vac. Sci. Technol. 21, 972–979 (1982) https://doi.org/10.1116/1.571877

Abstract

View articletitled, Deposition rate dependence of the critical optimization temperature for thin film properties: Evidence for the disordered area reevaporation mechanism

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The effect of the atomic incident angle upon the microstructure of thick beryllium deposits produced by physical vapor deposition

T. G. Nieh; R. F. Karlak; A. E. Vidoz

J. Vac. Sci. Technol. 21, 980–985 (1982) https://doi.org/10.1116/1.571878

Abstract

View articletitled, The effect of the atomic incident angle upon the microstructure of thick beryllium deposits produced by physical vapor deposition

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A study of the sputtering of copper–nickel using a combination of techniques

Michael P. Thomas; Brian Ralph

J. Vac. Sci. Technol. 21, 986–993 (1982) https://doi.org/10.1116/1.571879

Abstract

View articletitled, A study of the sputtering of copper–nickel using a combination of techniques

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Effect of glow discharge treatment of substrates on parylene‐substrate adhesion

Ashok K. Sharma; H. Yasuda

J. Vac. Sci. Technol. 21, 994–998 (1982) https://doi.org/10.1116/1.571880

Abstract

View articletitled, Effect of glow discharge treatment of substrates on parylene‐substrate adhesion

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Electron‐beam lithography three‐mark silicon automatic registration and its capabilities for process distortion compensation

Eric Tobias; Allen Carroll

J. Vac. Sci. Technol. 21, 999–1004 (1982) https://doi.org/10.1116/1.571881

Abstract

View articletitled, Electron‐beam lithography three‐mark silicon automatic registration and its capabilities for process distortion compensation

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Mask fabrication for VLSI using an electron beam exposure system

Y. Watakabe; T. Kato; A. Shigetomi; H. Morimoto

J. Vac. Sci. Technol. 21, 1005–1011 (1982) https://doi.org/10.1116/1.571852

Abstract

View articletitled, Mask fabrication for VLSI using an electron beam exposure system

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Intense‐pulsed plasma x‐ray sources for lithography: Mask damage effects

H. A. Hyman; A. Ballantyne; H. W. Friedman; D. A. Reilly; R.C. Southworth; C. L. Dym

J. Vac. Sci. Technol. 21, 1012–1016 (1982) https://doi.org/10.1116/1.571853

Abstract

View articletitled, Intense‐pulsed plasma x‐ray sources for lithography: Mask damage effects

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Silicon nitride single‐layer x‐ray mask

Misao Sekimoto; Hideo Yoshihara; Takashi Ohkubo

J. Vac. Sci. Technol. 21, 1017–1021 (1982) https://doi.org/10.1116/1.571854

Abstract

View articletitled, Silicon nitride single‐layer x‐ray mask

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Cryopump regeneration studies

R. C. Longsworth; G. E. Bonney

J. Vac. Sci. Technol. 21, 1022–1027 (1982) https://doi.org/10.1116/1.571855

Abstract

View articletitled, Cryopump regeneration studies

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A fail‐safe automatic vent control for Pfeiffer turbomolecular pumps

J. W. Stayt, Jr.

J. Vac. Sci. Technol. 21, 1028–1030 (1982) https://doi.org/10.1116/1.571856

Abstract

View articletitled, A fail‐safe automatic vent control for Pfeiffer turbomolecular pumps

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An o‐ring‐sealed rotary feedthrough for UHV applications

A. Pararas; S. T. Ceyer; J. T. Yates, Jr.

J. Vac. Sci. Technol. 21, 1031 (1982) https://doi.org/10.1116/1.571857

Abstract

View articletitled, An o‐ring‐sealed rotary feedthrough for UHV applications

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Guidelines for construction of low‐pressure gas manifolds

T. C. Paulick

J. Vac. Sci. Technol. 21, 1032–1036 (1982) https://doi.org/10.1116/1.571858

Abstract

View articletitled, Guidelines for construction of low‐pressure gas manifolds

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Precision manipulator heating and cooling assembly compatible with sample transfer

R. A. Outlaw; B. T. Baugh

J. Vac. Sci. Technol. 21, 1037–1038 (1982) https://doi.org/10.1116/1.571859

View articletitled, Precision manipulator heating and cooling assembly compatible with sample transfer

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Alternate method of measuring ion‐beam‐irradiated areas

A. S. Bhalla; L. L. Tongson

J. Vac. Sci. Technol. 21, 1039–1040 (1982) https://doi.org/10.1116/1.571860

Abstract

View articletitled, Alternate method of measuring ion‐beam‐irradiated areas

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Deposition of thin Mylar films by a vacuum thermal evaporation technique

V. Shrinet; U. K. Chaturvedi; S. K. Agrawal; A. K. Nigam

J. Vac. Sci. Technol. 21, 1040–1042 (1982) https://doi.org/10.1116/1.571861

Abstract

View articletitled, Deposition of thin Mylar films by a vacuum thermal evaporation technique

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Optical properties of reactively sputtered Ta₂O₅ films

F. Rubio; J. M. Albella; J. Denis; J. M. Martinez‐Duart

J. Vac. Sci. Technol. 21, 1043–1045 (1982) https://doi.org/10.1116/1.571862

Abstract

View articletitled, Optical properties of reactively sputtered Ta2O5 films

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Stress measurement in thin films by geometrical optics

S. M. Rossnagel; P. Gilstrap; R. Rujkorakarn

J. Vac. Sci. Technol. 21, 1045–1046 (1982) https://doi.org/10.1116/1.571863

Abstract

View articletitled, Stress measurement in thin films by geometrical optics

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Erratum: A photoelectron spectroscopy study of methanol adsorption and oxidation on Ag(111) [J. Vac. Sci. Technol. 20, 887 (1982)]

T. E. Felter; W. H. Weinberg; G. Ya. Lastushkina; P. A. Zhdan; G. K. Boreskov; J. Hrbek

J. Vac. Sci. Technol. 21, 1047 (1982) https://doi.org/10.1116/1.571864

View articletitled, Erratum: A photoelectron spectroscopy study of methanol adsorption and oxidation on Ag(111) [J. Vac. Sci. Technol. 20, 887 (1982)]

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Erratum: Welch Memorial Lecture: Preparation, structural characterization, and properties of atomically clean surfaces [J. Vac. Sci. Technol. 20, 271 (1982)]

H. E. Farnsworth

J. Vac. Sci. Technol. 21, 1047 (1982) https://doi.org/10.1116/1.571865

View articletitled, Erratum: Welch Memorial Lecture: Preparation, structural characterization, and properties of atomically clean surfaces [J. Vac. Sci. Technol. 20, 271 (1982)]

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The Chemical Physics of Solid Surface and Heterogeneous Catalysis, Volume I–Clean Solid Surfaces edited by D. A. King and D. P. Woodruff

G. A. Somorjai, Reviewer

J. Vac. Sci. Technol. 21, 1048 (1982) https://doi.org/10.1116/1.571866

View articletitled, The Chemical Physics of Solid Surface and Heterogeneous Catalysis, Volume I–Clean Solid Surfaces edited by D. A. King and D. P. Woodruff

MOS (Metal Oxide Semiconductors) Physics and Technology by E. H. Nicollian and J. R. Brews

H. H. Wieder, Reviewer

J. Vac. Sci. Technol. 21, 1048–1049 (1982) https://doi.org/10.1116/1.571867

View articletitled, MOS (Metal Oxide Semiconductors) Physics and Technology by E. H. Nicollian and J. R. Brews

Preparation of Nuclear Targets for Particle Accelerators edited by Jozef Jaklovsky

H. L. Adair, Reviewer

J. Vac. Sci. Technol. 21, 1049–1050 (1982) https://doi.org/10.1116/1.571868

View articletitled, Preparation of Nuclear Targets for Particle Accelerators edited by Jozef Jaklovsky

Physics and Applications of the Josephson Effect by A. Barone and G. Paterno

Robert M. White, Reviewer

J. Vac. Sci. Technol. 21, 1050–1051 (1982) https://doi.org/10.1116/1.571869

View articletitled, Physics and Applications of the Josephson Effect by A. Barone and G. Paterno

Most Read
Most Cited

Auger and photoelectron line energy relationships in aluminum–oxygen and silicon–oxygen compounds

Chlorine and hydrogen chloride on clean and oxygen‐covered Fe(100): Bonding and reactions

Growth and surface properties of lanthanum hexaboride crystals

Si incorporation in Al_xGa_1−xAs grown by molecular beam epitaxy

Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy

Clustering and second‐neighbor interactions in semiconductor alloys

Large grain CdTe thin films on Sb–Bi alloy‐coated Ta substrates

Deposition rate dependence of the critical optimization temperature for thin film properties: Evidence for the disordered area reevaporation mechanism

The effect of the atomic incident angle upon the microstructure of thick beryllium deposits produced by physical vapor deposition

A study of the sputtering of copper–nickel using a combination of techniques

Effect of glow discharge treatment of substrates on parylene‐substrate adhesion

Electron‐beam lithography three‐mark silicon automatic registration and its capabilities for process distortion compensation

Mask fabrication for VLSI using an electron beam exposure system

Intense‐pulsed plasma x‐ray sources for lithography: Mask damage effects

Silicon nitride single‐layer x‐ray mask

Cryopump regeneration studies

A fail‐safe automatic vent control for Pfeiffer turbomolecular pumps

An o‐ring‐sealed rotary feedthrough for UHV applications

Guidelines for construction of low‐pressure gas manifolds

Precision manipulator heating and cooling assembly compatible with sample transfer

Alternate method of measuring ion‐beam‐irradiated areas

Deposition of thin Mylar films by a vacuum thermal evaporation technique

Optical properties of reactively sputtered Ta₂O₅ films

Stress measurement in thin films by geometrical optics

Erratum: A photoelectron spectroscopy study of methanol adsorption and oxidation on Ag(111) [J. Vac. Sci. Technol. 20, 887 (1982)]

Erratum: Welch Memorial Lecture: Preparation, structural characterization, and properties of atomically clean surfaces [J. Vac. Sci. Technol. 20, 271 (1982)]

The Chemical Physics of Solid Surface and Heterogeneous Catalysis, Volume I–Clean Solid Surfaces edited by D. A. King and D. P. Woodruff

MOS (Metal Oxide Semiconductors) Physics and Technology by E. H. Nicollian and J. R. Brews

Preparation of Nuclear Targets for Particle Accelerators edited by Jozef Jaklovsky

Physics and Applications of the Josephson Effect by A. Barone and G. Paterno

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