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Auger and photoelectron line energy relationships in aluminum–oxygen and silicon–oxygen compounds
J. Vac. Sci. Technol. 21, 933–944 (1982)
https://doi.org/10.1116/1.571870
Chlorine and hydrogen chloride on clean and oxygen‐covered Fe(100): Bonding and reactions
J. Vac. Sci. Technol. 21, 945–951 (1982)
https://doi.org/10.1116/1.571871
Growth and surface properties of lanthanum hexaboride crystals
J. Vac. Sci. Technol. 21, 952–956 (1982)
https://doi.org/10.1116/1.571872
Si incorporation in AlxGa1−xAs grown by molecular beam epitaxy
J. Vac. Sci. Technol. 21, 957–960 (1982)
https://doi.org/10.1116/1.571873
Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy
J. Vac. Sci. Technol. 21, 961–964 (1982)
https://doi.org/10.1116/1.571874
The effect of the atomic incident angle upon the microstructure of thick beryllium deposits produced by physical vapor deposition
J. Vac. Sci. Technol. 21, 980–985 (1982)
https://doi.org/10.1116/1.571878
A study of the sputtering of copper–nickel using a combination of techniques
J. Vac. Sci. Technol. 21, 986–993 (1982)
https://doi.org/10.1116/1.571879
Effect of glow discharge treatment of substrates on parylene‐substrate adhesion
J. Vac. Sci. Technol. 21, 994–998 (1982)
https://doi.org/10.1116/1.571880
Electron‐beam lithography three‐mark silicon automatic registration and its capabilities for process distortion compensation
J. Vac. Sci. Technol. 21, 999–1004 (1982)
https://doi.org/10.1116/1.571881
Mask fabrication for VLSI using an electron beam exposure system
J. Vac. Sci. Technol. 21, 1005–1011 (1982)
https://doi.org/10.1116/1.571852
Intense‐pulsed plasma x‐ray sources for lithography: Mask damage effects
J. Vac. Sci. Technol. 21, 1012–1016 (1982)
https://doi.org/10.1116/1.571853
Deposition of thin Mylar films by a vacuum thermal evaporation technique
J. Vac. Sci. Technol. 21, 1040–1042 (1982)
https://doi.org/10.1116/1.571861
Optical properties of reactively sputtered Ta2O5 films
J. Vac. Sci. Technol. 21, 1043–1045 (1982)
https://doi.org/10.1116/1.571862