A review of molecular-beam epitaxy of GaAs and the observation of surface structures with high-energy electron diffraction in an ultrahigh-vacuum system is described. The utilization of these surface structures as growth conditions to produce n- and p-type layers when doped with Sn, Ge, and Mg, and the electrical and optical evaluations of the layers thus grown is also discussed. The molecular-beam epitaxy method may be used to fabricate extremely thin multilayer structures and may play an increasing role in semiconductor technology.

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