An ASED molecular orbital study of the binding, structures, and reactions of Cl, Cl2, HCl, and HCl+O on 4–21 atom clusters in the Fe(100) structure has been made. Cl2 bonds dissociatively (as seen by Dowben and Jones in LEED and TDS studies). Coverage is limited by σ*p repulsions; orbitals of this symmetry are occupied by electron donation from iron. We find Cl favors onefold and twofold sites and discuss this unexpected result with perturbation theory. It is suggested that with decreased backbonding from iron to Cl the fourfold site can become favored. There is an absence of experimental or theoretical evidence supporting orbital reoccupations to favor the high‐coordinate site. HCl dissociation is found to occur with a barrier on the surface that is roughly half the gas phase binding energy, leading to stable products. The HCl+O→Cl+OH reaction on the surface is found to be structure sensitive and the reasons are interpretable from molecular orbital theory.
Skip Nav Destination
Article navigation
November 1982
Research Article|
November 01 1982
Chlorine and hydrogen chloride on clean and oxygen‐covered Fe(100): Bonding and reactions
N. C. Debnath;
N. C. Debnath
Department of Chemistry, Case Western Reserve University, Cleveland, Ohio 44106
Search for other works by this author on:
Alfred B. Anderson
Alfred B. Anderson
Department of Chemistry, Case Western Reserve University, Cleveland, Ohio 44106
Search for other works by this author on:
J. Vac. Sci. Technol. 21, 945–951 (1982)
Article history
Received:
February 01 1982
Accepted:
June 25 1982
Citation
N. C. Debnath, Alfred B. Anderson; Chlorine and hydrogen chloride on clean and oxygen‐covered Fe(100): Bonding and reactions. J. Vac. Sci. Technol. 1 November 1982; 21 (4): 945–951. https://doi.org/10.1116/1.571871
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Could not validate captcha. Please try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00
Citing articles via
Related Content
Cl atom recombination on silicon oxy-chloride layers deposited on chamber walls in chlorine–oxygen plasmas
Journal of Vacuum Science & Technology A (August 2012)
Effect of post-nitride-passivation processing on the long-term stability of polysilicon integrated circuit resistors
J. Vac. Sci. Technol. B (March 2000)
The effect of 3d shell back bonding on the binding of chlorine containing molecules
J. Chem. Phys. (October 1985)
Room‐temperature chlorination of As‐rich GaAs (110)
J. Vac. Sci. Technol. B (July 1996)
Kinetics of Potassium Chloride and Chlorine on Tungsten
J. Chem. Phys. (July 2004)