A re‐examination of the experimental data and previous electronic structure calculations on the prototype system Al/GaAs(110), together with new calculations and models, indicates that at low coverages and temperatures neither a covalent bond nor a metallic bond is formed between Al and the substrate. Instead, the predominant species is likely to be Al clusters which interact only weakly with the substrate.
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Research Article| September 01 1981
Initial stage of formation of a metal‐semiconductor interface: Al on GaAs(110)
J. Vac. Sci. Technol. 19, 690–692 (1981)
A. Zunger; Initial stage of formation of a metal‐semiconductor interface: Al on GaAs(110). J. Vac. Sci. Technol. 1 September 1981; 19 (3): 690–692. https://doi.org/10.1116/1.571086
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