The application of interference enhanced Raman scattering to probe the structure of metal/semiconductor interfaces is described. This technique is used to study the interface structures of Pd on hydrogenated amorphous Si (a‐Si:H) with particular attention to the effects of a native oxide layer on the a‐Si:H. It is found that for deposition on lightly oxidized a‐Si:H, ∠20 Å of Pd is consumed to form a crystalline silicide interfacial structure with composition near Pd2Si. Annealing causes growth of this phase and further consumption of Pd until a second phase of Pd2Si is observed. If the deposition is repeated on more heavily oxidized a‐Si:H, no silicide formation is observed even at annealing temperatures of 400 °C.
Interference enhanced Raman scattering study of the interfacial reaction of Pd on a‐Si:H
R. J. Nemanich, C. C. Tsai, M. J. Thompson, T. W. Sigmon; Interference enhanced Raman scattering study of the interfacial reaction of Pd on a‐Si:H. J. Vac. Sci. Technol. 1 September 1981; 19 (3): 685–688. https://doi.org/10.1116/1.571085
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