The chemical composition of surface films formed on air exposed bromine/methanol etched InP were investigated in both the ’’as etched’’ condition and after insitu heat treatment. Both UPS and XPS spectra were obtained in order to probe at two different depths into the surface (≊5 and 15 Å, respectively). The as etched surface appears to be composed primarily of In2O3 with a small concentration of a phosphate compound, presumably either InPO4 or H3PO4. Prolonged exposure to water or water vapor causes additional film growth. The new growth increases the phosphate concentration and an In compound which, by the location the In3d5/2 peak at 445.6 eV, indicates either InPO4 or In(OH)3. Heating the as etched surface insitu also causes film growth. The phosphate is found to evaporate from the outer surface of the film but to grow underneath the In2O3 skin as the substrate is heated. It is suspected that excessive H2O on CO background in the vacuum chamber caused a rapid oxidation of the surface as the sample was heated.

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