We present the results of angle integrated photoelectron spectroscopy (hν=21.2 eV) on Si(111)–Pd interfaces. We have found that some intermixing between Si and Pd takes place also when the interface is prepared at liquid nitrogen temperature (LNT). After preparation at LNT the intermixing increases at room temperature (RT). The results are discussed in connection with the interface formation mechanism.
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© 1980 American Vacuum Society.
1980
American Vacuum Society
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