Postdeposition annealing behavior of rf sputtered ZnO films

The crystallographic orientation of rf reactively sputtered ZnO has been characterized by x‐ray diffraction after postdeposition heat treatment. Diffractometer measurements were made on as‐deposited films as well as on films which were annealed up to 700°C. The heat treatment accounted for improved crystallite orientation as evidenced by increased alignment of (002) crystal planes parallel to the substrate (c‐axis normal orientation), possible crystallite growth, and considerable stress relief. Rocking curve half widths indicate that annealed films have a very small angular deviation from the c‐axis normal orientation.