In this paper we consider a new superlattice system consisting of alternating layers of CdTe and HgTe constructed parallel to the (001) zincblende plane. The tight‐binding method is used to calculate the electronic properties of this system, in particular, band edge and interface properties. The energy gap as a function of layer thickness is determined. It is found to decrease monotonically with increasing HgTe layer thickness for a fixed ratio of CdTe to HgTe layer thicknesses. The symmetry of the valence band maximum state is found to change at certain HgTe layer thicknesses. This is explained by relating the superlattice states to bulk CdTe and HgTe states. The existence of interface states is investigated for the superlattice with 12 layers of CdTe alternating with 12 of HgTe. Interface states are found near the boundaries of the Brillouin zone, but none are found in the band gap.
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September 1979
Research Article|
September 01 1979
Ideal CdTe/HgTe superlattices
J. N. Schulman;
J. N. Schulman
California Institute of Technology, Pasadena, California 91125
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T. C. McGill
T. C. McGill
California Institute of Technology, Pasadena, California 91125
Search for other works by this author on:
J. N. Schulman
T. C. McGill
California Institute of Technology, Pasadena, California 91125
J. Vac. Sci. Technol. 16, 1513–1516 (1979)
Citation
J. N. Schulman, T. C. McGill; Ideal CdTe/HgTe superlattices. J. Vac. Sci. Technol. 1 September 1979; 16 (5): 1513–1516. https://doi.org/10.1116/1.570237
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