In this paper we consider a new superlattice system consisting of alternating layers of CdTe and HgTe constructed parallel to the (001) zincblende plane. The tight‐binding method is used to calculate the electronic properties of this system, in particular, band edge and interface properties. The energy gap as a function of layer thickness is determined. It is found to decrease monotonically with increasing HgTe layer thickness for a fixed ratio of CdTe to HgTe layer thicknesses. The symmetry of the valence band maximum state is found to change at certain HgTe layer thicknesses. This is explained by relating the superlattice states to bulk CdTe and HgTe states. The existence of interface states is investigated for the superlattice with 12 layers of CdTe alternating with 12 of HgTe. Interface states are found near the boundaries of the Brillouin zone, but none are found in the band gap.

Topics
Tight-binding model, Band gap, Semiconductors, Superlattices, Crystal structure, Interfacial properties
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© 1979 American Vacuum Society.
1979
American Vacuum Society
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