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July 1991

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

Magnetron ion etching of InP using mixture of methane and hydrogen and its comparison with reactive ion etching

Jaspal Singh

J. Vac. Sci. Technol. B 9, 1911–1919 (1991) https://doi.org/10.1116/1.585379

Abstract

View articletitled, Magnetron ion etching of InP using mixture of methane and hydrogen and its comparison with reactive ion etching

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Growth rate and composition calibration of III/V materials on GaAs and InP using reflection high‐energy electron diffraction oscillations

R. F. Kopf; J. M. Kuo; M. Ohring

J. Vac. Sci. Technol. B 9, 1920–1923 (1991) https://doi.org/10.1116/1.585380

Abstract

View articletitled, Growth rate and composition calibration of III/V materials on GaAs and InP using reflection high‐energy electron diffraction oscillations

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An investigation of the properties of cubic GaN grown on GaAs by plasma‐assisted molecular‐beam epitaxy

S. Strite; J. Ruan; Z. Li; A. Salvador; H. Chen; David J. Smith; W. J. Choyke; H. Morkoç

J. Vac. Sci. Technol. B 9, 1924–1929 (1991) https://doi.org/10.1116/1.585381

Abstract

View articletitled, An investigation of the properties of cubic GaN grown on GaAs by plasma‐assisted molecular‐beam epitaxy

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Substrate‐epitaxial layer interface effects on AlGaAs/GaAs heterostructure device properties

M. L. Gray; J. D. Yoder; A. D. Brotman; A. Chandra; J. M. Parsey

J. Vac. Sci. Technol. B 9, 1930–1933 (1991) https://doi.org/10.1116/1.585382

Abstract

View articletitled, Substrate‐epitaxial layer interface effects on AlGaAs/GaAs heterostructure device properties

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Treatment of ZnSe substrates for homoepitaxy

K. Ohkawa; T. Karasawa; T. Mitsuyu

J. Vac. Sci. Technol. B 9, 1934–1938 (1991) https://doi.org/10.1116/1.585383

Abstract

View articletitled, Treatment of ZnSe substrates for homoepitaxy

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Registration of soft x radiation in As₂S₃ layers

E. Spassova; G. Danev; P. Guttmann

J. Vac. Sci. Technol. B 9, 1939–1943 (1991) https://doi.org/10.1116/1.585384

Abstract

View articletitled, Registration of soft x radiation in As2S3 layers

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Millisecond annealing for complementary metal–oxide semiconductor source and drain implants

J. C. Carter; A. G. R. Evans; P. J. Timans; J. M. C. England

J. Vac. Sci. Technol. B 9, 1944–1949 (1991) https://doi.org/10.1116/1.585385

Abstract

View articletitled, Millisecond annealing for complementary metal–oxide semiconductor source and drain implants

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Small source/drain metal–oxide‐semiconductor field effect transistor using a thermally stable local TiSi₂ interconnection

Takehito Yoshida; Shin‐ichi Ogawa

J. Vac. Sci. Technol. B 9, 1950–1955 (1991) https://doi.org/10.1116/1.585386

Abstract

View articletitled, Small source/drain metal–oxide‐semiconductor field effect transistor using a thermally stable local TiSi2 interconnection

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Stress and stress relaxation in integrated circuit metals and dielectrics

Bruce L. Draper; Thomas A. Hill

J. Vac. Sci. Technol. B 9, 1956–1962 (1991) https://doi.org/10.1116/1.585387

Abstract

View articletitled, Stress and stress relaxation in integrated circuit metals and dielectrics

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Carbon removal from as‐received Si samples in ultrahigh vacuum using ultraviolet light and an ozone beam

J. M. Lenssinck; A. J. Hoeven; E. J. van Loenen; D. Dijkkamp

J. Vac. Sci. Technol. B 9, 1963–1966 (1991) https://doi.org/10.1116/1.585388

Abstract

View articletitled, Carbon removal from as‐received Si samples in ultrahigh vacuum using ultraviolet light and an ozone beam

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Cleaning of Si(001) surfaces studied by optical second‐harmonic generation and x‐ray photoelectron spectroscopy

R. W. J. Hollering; D. Dijkkamp; H. W. L. Lindelauf; P. A. M. van der Heide

J. Vac. Sci. Technol. B 9, 1967–1969 (1991) https://doi.org/10.1116/1.585389

Abstract

View articletitled, Cleaning of Si(001) surfaces studied by optical second‐harmonic generation and x‐ray photoelectron spectroscopy

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Dry surface cleaning using CO₂ snow

Robert Sherman; John Grob; Walter Whitlock

J. Vac. Sci. Technol. B 9, 1970–1977 (1991) https://doi.org/10.1116/1.585390

Abstract

View articletitled, Dry surface cleaning using CO2 snow

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CH₄/H₂ reactive ion etching for gate recessing of pseudomorphic modulation doped field effect transistors

R. Pereira; M. Van Hove; W. De Raedt; Ph. Jansen; G. Borghs; R. Jonckheere; M. Van Rossum

J. Vac. Sci. Technol. B 9, 1978–1980 (1991) https://doi.org/10.1116/1.585391

Abstract

View articletitled, CH4/H2 reactive ion etching for gate recessing of pseudomorphic modulation doped field effect transistors

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A scanning tunneling microscope using dual‐axes inchworms for the observation of a cleaved semiconductor surface

T. Kato; F. Osaka; I. Tanaka; S. Ohkouchi

J. Vac. Sci. Technol. B 9, 1981–1984 (1991) https://doi.org/10.1116/1.585392

Abstract

View articletitled, A scanning tunneling microscope using dual‐axes inchworms for the observation of a cleaved semiconductor surface

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Electrolytic scanning tunneling microscopy and point contact studies at electrochemically polished Au(111) substrates with and without Pb adsorbates

M. Binggeli; D. Carnal; R. Nyffenegger; H. Siegenthaler; R. Christoph; H. Rohrer

J. Vac. Sci. Technol. B 9, 1985–1992 (1991) https://doi.org/10.1116/1.585393

Abstract

View articletitled, Electrolytic scanning tunneling microscopy and point contact studies at electrochemically polished Au(111) substrates with and without Pb adsorbates

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Surface grid technique for noncontact e‐beam testing of very large scale integrated package substrate

K. L. Lee; C. Schaefer; D. P. Kern

J. Vac. Sci. Technol. B 9, 1993–2005 (1991) https://doi.org/10.1116/1.585394

Abstract

View articletitled, Surface grid technique for noncontact e‐beam testing of very large scale integrated package substrate

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Growth of Si_1−xGe_x by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors

J. C. Sturm; P. V. Schwartz; E. J. Prinz; H. Manoharan

J. Vac. Sci. Technol. B 9, 2011–2016 (1991) https://doi.org/10.1116/1.585395

Abstract

View articletitled, Growth of Si1−xGex by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors

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In situ doping of Si and Si_1−xGe_x in ultrahigh vacuum chemical vapor deposition

M. Racanelli; D. W. Greve

J. Vac. Sci. Technol. B 9, 2017–2021 (1991) https://doi.org/10.1116/1.585769

Abstract

View articletitled, In situ doping of Si and Si1−xGex in ultrahigh vacuum chemical vapor deposition

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Surface morphology of epitaxial Ge on Si grown by plasma enhanced chemical vapor deposition

W. J. Varhue; J. M. Carulli; J. A. Miller; G. G. Peterson

J. Vac. Sci. Technol. B 9, 2022–2026 (1991) https://doi.org/10.1116/1.585770

Abstract

View articletitled, Surface morphology of epitaxial Ge on Si grown by plasma enhanced chemical vapor deposition

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A quantitative model of point defect diffusivity and recombination in ion beam deposition and combined ion and molecular deposition

O. Vancauwenberghe; N. Herbots; O. C. Hellman

J. Vac. Sci. Technol. B 9, 2027–2033 (1991) https://doi.org/10.1116/1.585771

Abstract

View articletitled, A quantitative model of point defect diffusivity and recombination in ion beam deposition and combined ion and molecular deposition

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Electron microscopy study of microvoid generation in molecular‐beam epitaxy‐grown silicon

D. D. Perovic; G. C. Weatherly; J.‐P. Noël; D. C. Houghton

J. Vac. Sci. Technol. B 9, 2034–2038 (1991) https://doi.org/10.1116/1.585772

Abstract

View articletitled, Electron microscopy study of microvoid generation in molecular‐beam epitaxy‐grown silicon

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Influence of thermal annealing on the electron mobility in modulation doped Si/SiGe heterostructures

F. Schäffler; H.‐J. Herzog; H. Jorke; E. Kasper

J. Vac. Sci. Technol. B 9, 2039–2044 (1991) https://doi.org/10.1116/1.585773

Abstract

View articletitled, Influence of thermal annealing on the electron mobility in modulation doped Si/SiGe heterostructures

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Stability and interdiffusion of short‐period Si/Ge strained layer superlattices

E. Friess; R. Schorer; K. Eberl; G. Abstreiter

J. Vac. Sci. Technol. B 9, 2045–2047 (1991) https://doi.org/10.1116/1.585774

Abstract

View articletitled, Stability and interdiffusion of short‐period Si/Ge strained layer superlattices

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Growth interfaces of Si_1−xGe_x/Si heterostructures studied by in situ laser light scattering

D. J. Robbins; A. G. Cullis; A. J. Pidduck

J. Vac. Sci. Technol. B 9, 2048–2053 (1991) https://doi.org/10.1116/1.585775

Abstract

View articletitled, Growth interfaces of Si1−xGex/Si heterostructures studied by in situ laser light scattering

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Application of x‐ray diffraction techniques to the structural study of silicon based heterostructures

J.‐M. Baribeau; D. C. Houghton

J. Vac. Sci. Technol. B 9, 2054–2058 (1991) https://doi.org/10.1116/1.585776

Abstract

View articletitled, Application of x‐ray diffraction techniques to the structural study of silicon based heterostructures

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Temperature dependent transport measurements on strained Si/Si_1−xGe_x resonant tunneling devices

Ulf Gennser; V. P. Kesan; S. S. Iyer; T. J. Bucelot; E. S. Yang

J. Vac. Sci. Technol. B 9, 2059–2063 (1991) https://doi.org/10.1116/1.585777

Abstract

View articletitled, Temperature dependent transport measurements on strained Si/Si1−xGex resonant tunneling devices

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Quantum devices using SiGe/Si heterostructures

R. P. G. Karunasiri; K. L. Wang

J. Vac. Sci. Technol. B 9, 2064–2071 (1991) https://doi.org/10.1116/1.585778

Abstract

View articletitled, Quantum devices using SiGe/Si heterostructures

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Surface photovoltage and band bending at metal/GaAs interfaces: A contact potential difference and photoemission spectroscopy study

D. Mao; A. Kahn; G. Le Lay; M. Marsi; Y. Hwu; G. Margaritondo; M. Santos; M. Shayegan; L. T. Florez; J. P. Harbison

J. Vac. Sci. Technol. B 9, 2083–2089 (1991) https://doi.org/10.1116/1.585779

Abstract

View articletitled, Surface photovoltage and band bending at metal/GaAs interfaces: A contact potential difference and photoemission spectroscopy study

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Au and Al Schottky barrier formation on GaAs (100) surfaces prepared by thermal desorption of a protective arsenic coating

C. J. Spindt; M. Yamada; P. L. Meissner; K. E. Miyano; A. Herrera; W. E. Spicer; A. J. Arko

J. Vac. Sci. Technol. B 9, 2090–2094 (1991) https://doi.org/10.1116/1.585780

Abstract

View articletitled, Au and Al Schottky barrier formation on GaAs (100) surfaces prepared by thermal desorption of a protective arsenic coating

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Surface‐photovoltage effects on adsorbate‐covered semiconductor surfaces at low temperatures

T. U. Kampen; D. Troost; X. Y. Hou; L. Koenders; W. Mönch

J. Vac. Sci. Technol. B 9, 2095–2099 (1991) https://doi.org/10.1116/1.585781

Abstract

View articletitled, Surface‐photovoltage effects on adsorbate‐covered semiconductor surfaces at low temperatures

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Band bending at low‐temperature metal/III–V semiconductor interfaces: The overshoot phenomenon

K. E. Miyano; R. Cao; C. J. Spindt; T. Kendelewicz; I. Lindau; W. E. Spicer

J. Vac. Sci. Technol. B 9, 2100–2107 (1991) https://doi.org/10.1116/1.585782

Abstract

View articletitled, Band bending at low‐temperature metal/III–V semiconductor interfaces: The overshoot phenomenon

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Surface photovoltage at Cs/GaAs(110): Photoemission experiments and theoretical modeling

A. Bauer; M. Prietsch; S. Molodtsov; C. Laubschat; G. Kaindl

J. Vac. Sci. Technol. B 9, 2108–2113 (1991) https://doi.org/10.1116/1.585747

Abstract

View articletitled, Surface photovoltage at Cs/GaAs(110): Photoemission experiments and theoretical modeling

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In situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001) n‐ and p‐type GaAs surfaces

X. Yin; H‐M. Chen; F. H. Pollak; Y. Cao; P. A. Montano; P. D. Kirchner; G. D. Pettit; J. M. Woodall

J. Vac. Sci. Technol. B 9, 2114–2117 (1991) https://doi.org/10.1116/1.585748

Abstract

View articletitled, In situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001) n‐ and p‐type GaAs surfaces

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Schottky barrier heights for GaAs diodes fabricated at low temperatures

S. P. Wilks; J. I. Morris; D. A. Woolf; R. H. Williams

J. Vac. Sci. Technol. B 9, 2118–2121 (1991) https://doi.org/10.1116/1.585749

Abstract

View articletitled, Schottky barrier heights for GaAs diodes fabricated at low temperatures

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Reactivity, growth mode, and kinetics of the Fermi level pinning at the Ni/GaAs(110) interface

J. P. Landesman; G. Jezequel; J. Olivier; M. Larive; J. Thomas; A. Taleb‐Ibrahimi; J. E. Bonnet

J. Vac. Sci. Technol. B 9, 2122–2128 (1991) https://doi.org/10.1116/1.585750

Abstract

View articletitled, Reactivity, growth mode, and kinetics of the Fermi level pinning at the Ni/GaAs(110) interface

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Increased range of Fermi‐level stabilization energy at metal/melt‐grown GaAs(100) interfaces

S. Chang; I. M. Vitomirov; L. J. Brillson; D. F. Rioux; P. D. Kirchner; G. D. Pettit; J. M. Woodall

J. Vac. Sci. Technol. B 9, 2129–2134 (1991) https://doi.org/10.1116/1.585751

Abstract

View articletitled, Increased range of Fermi‐level stabilization energy at metal/melt‐grown GaAs(100) interfaces

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The metal adatom on GaAs(110): A surface negative U center

G. Allan; M. Lannoo

J. Vac. Sci. Technol. B 9, 2135–2139 (1991) https://doi.org/10.1116/1.585752

Abstract

View articletitled, The metal adatom on GaAs(110): A surface negative U center

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Electronic structure of ideal and nonideal metal/GaAs contacts

Mark van Schilfgaarde; N. Newman

J. Vac. Sci. Technol. B 9, 2140–2145 (1991) https://doi.org/10.1116/1.585753

Abstract

View articletitled, Electronic structure of ideal and nonideal metal/GaAs contacts

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The influence of Sb as a surfactant on the strain relaxation of Ge/Si(001)

J. M. C. Thornton; A. A. Williams; J. E. Macdonald; R. G. van Silfhout; J. F. van der Veen; M. Finney; C. Norris

J. Vac. Sci. Technol. B 9, 2146–2149 (1991) https://doi.org/10.1116/1.585754

Abstract

View articletitled, The influence of Sb as a surfactant on the strain relaxation of Ge/Si(001)

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The effect of submonolayer Sn δ‐doping layers on the growth of InGaAs and GaAs

G. S. Petrich; A. M. Dabiran; J. E. Macdonald; P. I. Cohen

J. Vac. Sci. Technol. B 9, 2150–2153 (1991) https://doi.org/10.1116/1.585755

Abstract

View articletitled, The effect of submonolayer Sn δ‐doping layers on the growth of InGaAs and GaAs

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Phase stability versus the lattice mismatch of (100)Co_1−xGa_x thin films on (100)GaAs

Delroy A. Baugh; A. Alec Talin; R. Stanley Williams; Tsung‐Chia Kuo; Kang L. Wang

J. Vac. Sci. Technol. B 9, 2154–2157 (1991) https://doi.org/10.1116/1.585756

Abstract

View articletitled, Phase stability versus the lattice mismatch of (100)Co1−xGax thin films on (100)GaAs

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Observation of the first‐order phase transition from single to double stepped Si (001) in metalorganic chemical vapor deposition of InP on Si

M. Grundmann; A. Krost; D. Bimberg

J. Vac. Sci. Technol. B 9, 2158–2166 (1991) https://doi.org/10.1116/1.585757

Abstract

View articletitled, Observation of the first‐order phase transition from single to double stepped Si (001) in metalorganic chemical vapor deposition of InP on Si

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Reconstruction at the Ga₂Se₃/GaAs epitaxial interface

D. Li; Y. Nakamura; N. Otsuka; J. Qiu; M. Kobayashi; R. L. Gunshor

J. Vac. Sci. Technol. B 9, 2167–2170 (1991) https://doi.org/10.1116/1.585758

Abstract

View articletitled, Reconstruction at the Ga2Se3/GaAs epitaxial interface

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An x‐ray photoelectron spectroscopy study of bonding at II–VI/III–V heterovalent interfaces

D. R. Menke; J. Qiu; R. L. Gunshor; M. Kobayashi; D. Li; Y. Nakamura; N. Otsuka

J. Vac. Sci. Technol. B 9, 2171–2175 (1991) https://doi.org/10.1116/1.585759

Abstract

View articletitled, An x‐ray photoelectron spectroscopy study of bonding at II–VI/III–V heterovalent interfaces

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Surface reconstructions and surface energies of monolayer‐coverage cation‐terminated Ga_0.5In_0.5P(001) surfaces

Sverre Froyen; Alex Zunger

J. Vac. Sci. Technol. B 9, 2176–2181 (1991) https://doi.org/10.1116/1.585760

Abstract

View articletitled, Surface reconstructions and surface energies of monolayer‐coverage cation‐terminated Ga0.5In0.5P(001) surfaces

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Atomic ordering in III/V semiconductor alloys

G. B. Stringfellow; G. S. Chen

J. Vac. Sci. Technol. B 9, 2182–2188 (1991) https://doi.org/10.1116/1.585761

Abstract

View articletitled, Atomic ordering in III/V semiconductor alloys

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The molecular beam epitaxy growth of InGaAs on GaAs(100) studied by in situ scanning tunneling microscopy and reflection high‐energy electron diffraction

C. W. Snyder; D. Barlett; B. G. Orr; P. K. Bhattacharya; J. Singh

J. Vac. Sci. Technol. B 9, 2189–2193 (1991) https://doi.org/10.1116/1.585762

Abstract

View articletitled, The molecular beam epitaxy growth of InGaAs on GaAs(100) studied by in situ scanning tunneling microscopy and reflection high‐energy electron diffraction

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Extended x‐ray absorption fine structure and x‐ray diffraction study of strain and bond distortions in epitaxial semiconductor layers

J. C. Woicik; C. E. Bouldin; J. O. Cross; L. B. Sorensen; C. A. King

J. Vac. Sci. Technol. B 9, 2194–2197 (1991) https://doi.org/10.1116/1.585763

Abstract

View articletitled, Extended x‐ray absorption fine structure and x‐ray diffraction study of strain and bond distortions in epitaxial semiconductor layers

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Mechanisms controlling growth quality of Si–Ge superlattices in different growth directions

K. E. Khor; S. Das Sarma

J. Vac. Sci. Technol. B 9, 2198–2201 (1991) https://doi.org/10.1116/1.585764

Abstract

View articletitled, Mechanisms controlling growth quality of Si–Ge superlattices in different growth directions

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Nonuniform strain profiles in cubic CdS/GaAs films measured by reflection high energy electron diffraction and Raman spectroscopy

Kislay Sinha; José Menéndez; David W. Niles; Hartmut Höchst

J. Vac. Sci. Technol. B 9, 2202–2205 (1991) https://doi.org/10.1116/1.585765

Abstract

View articletitled, Nonuniform strain profiles in cubic CdS/GaAs films measured by reflection high energy electron diffraction and Raman spectroscopy

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The growth of cubic CdS on InP(110) studied in situ by Raman spectroscopy

D. R. T. Zahn; Ch. Maierhofer; A. Winter; M. Reckzügel; R. Srama; A. Thomas; K. Horn; W. Richter

J. Vac. Sci. Technol. B 9, 2206–2211 (1991) https://doi.org/10.1116/1.585766

Abstract

View articletitled, The growth of cubic CdS on InP(110) studied in situ by Raman spectroscopy

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Thermal expansion contributions to band gap and band offset temperature dependencies

Kevin J. Malloy; James A. Van Vechten

J. Vac. Sci. Technol. B 9, 2212–2218 (1991) https://doi.org/10.1116/1.585767

Abstract

View articletitled, Thermal expansion contributions to band gap and band offset temperature dependencies

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Ballistic electron emission microscopy, current transport, and p‐type δ doping control of n‐isotype InAs–GaAs heterojunctions

T.‐H. Shen; M. Elliott; A. E. Fowell; A. Cafolla; B. E. Richardson; D. Westwood; R. H. Williams

J. Vac. Sci. Technol. B 9, 2219–2224 (1991) https://doi.org/10.1116/1.585768

Abstract

View articletitled, Ballistic electron emission microscopy, current transport, and p‐type δ doping control of n‐isotype InAs–GaAs heterojunctions

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Epitaxial growth and interface parameters of Si layers on GaAs(001) and AlAs(001) substrates

G. Bratina; L. Sorba; A. Antonini; L. Vanzetti; A. Franciosi

J. Vac. Sci. Technol. B 9, 2225–2232 (1991) https://doi.org/10.1116/1.585725

Abstract

View articletitled, Epitaxial growth and interface parameters of Si layers on GaAs(001) and AlAs(001) substrates

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Measurement of the CdSe/ZnTe valence band offset by x‐ray photoelectron spectroscopy

E. T. Yu; M. C. Phillips; J. O. McCaldin; T. C. McGill

J. Vac. Sci. Technol. B 9, 2233–2237 (1991) https://doi.org/10.1116/1.585726

Abstract

View articletitled, Measurement of the CdSe/ZnTe valence band offset by x‐ray photoelectron spectroscopy

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Valence band offset in ZnS layers on Si(111) grown by molecular beam epitaxy

Ch. Maierhofer; S. Kulkarni; M. Alonso; T. Reich; K. Horn

J. Vac. Sci. Technol. B 9, 2238–2243 (1991) https://doi.org/10.1116/1.585727

Abstract

View articletitled, Valence band offset in ZnS layers on Si(111) grown by molecular beam epitaxy

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Low‐energy cathodoluminescence spectroscopy studies of III–V superlattice interdiffusion: Optical emission properties of diffusion associated defects

R. Enrique Viturro; Brian L. Olmsted; Susan N. Houde‐Walter; Gary W. Wicks

J. Vac. Sci. Technol. B 9, 2244–2250 (1991) https://doi.org/10.1116/1.585728

Abstract

View articletitled, Low‐energy cathodoluminescence spectroscopy studies of III–V superlattice interdiffusion: Optical emission properties of diffusion associated defects

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Density of states of quantum‐well systems with interface roughness and point defects

Z. Q. Li; W. Pötz

J. Vac. Sci. Technol. B 9, 2251–2255 (1991) https://doi.org/10.1116/1.585729

Abstract

View articletitled, Density of states of quantum‐well systems with interface roughness and point defects

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Passivation of GaAs(001) surfaces by incorporation of group VI atoms: A structural investigation

S. A. Chambers; V. S. Sundaram

J. Vac. Sci. Technol. B 9, 2256–2262 (1991) https://doi.org/10.1116/1.585730

Abstract

View articletitled, Passivation of GaAs(001) surfaces by incorporation of group VI atoms: A structural investigation

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Optical spectroscopy of (001) GaAs and AlAs under molecular‐beam epitaxy growth conditions

M. Wassermeier; I. Kamiya; D. E. Aspnes; L. T. Florez; J. P. Harbison; P. M. Petroff

J. Vac. Sci. Technol. B 9, 2263–2267 (1991) https://doi.org/10.1116/1.585731

Abstract

View articletitled, Optical spectroscopy of (001) GaAs and AlAs under molecular‐beam epitaxy growth conditions

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Arsenic coverage dependence of the angular distribution of secondary ions desorbed from the GaAs{001}(2×4) surface

K. Caffey; R. Blumenthal; J. Burnham; E. Furman; N. Winograd

J. Vac. Sci. Technol. B 9, 2268–2276 (1991) https://doi.org/10.1116/1.585732

Abstract

View articletitled, Arsenic coverage dependence of the angular distribution of secondary ions desorbed from the GaAs{001}(2×4) surface

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Scanning tunneling microscopy of molecular‐beam epitaxially grown GaAs (001) surfaces

Ichiro Tanaka; Shunsuke Ohkouchi; Takashi Kato; Fukunobu Osaka

J. Vac. Sci. Technol. B 9, 2277–2281 (1991) https://doi.org/10.1116/1.585733

Abstract

View articletitled, Scanning tunneling microscopy of molecular‐beam epitaxially grown GaAs (001) surfaces

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Dynamical strain at semiconductor interfaces: Structure and surface‐atom vibrations of GaAs(110) and GaAs(110)–p(1×1)–Sb

T. J. Godin; John P. LaFemina; C. B. Duke

J. Vac. Sci. Technol. B 9, 2282–2289 (1991) https://doi.org/10.1116/1.585734

Abstract

View articletitled, Dynamical strain at semiconductor interfaces: Structure and surface‐atom vibrations of GaAs(110) and GaAs(110)–p(1×1)–Sb

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Synchrotron x‐ray standing‐wave study of Sb on GaAs(110) and InP(110)

T. Kendelewicz; J. C. Woicik; K. E. Miyano; P. L. Cowan; B. A. Karlin; C. E. Bouldin; P. Pianetta; W. E. Spicer

J. Vac. Sci. Technol. B 9, 2290–2293 (1991) https://doi.org/10.1116/1.585735

Abstract

View articletitled, Synchrotron x‐ray standing‐wave study of Sb on GaAs(110) and InP(110)

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Structure of the Bi/InP(110) interface: A photoemission extended x‐ray absorption fine‐structure study

K. M. Choudhary; P. S. Mangat; P. Seshadri; D. Kilday; G. Margaritondo

J. Vac. Sci. Technol. B 9, 2294–2300 (1991) https://doi.org/10.1116/1.585736

Abstract

View articletitled, Structure of the Bi/InP(110) interface: A photoemission extended x‐ray absorption fine‐structure study

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Observation of a (2×8) surface reconstruction on Si_1−xGe_x alloys grown on (100) Si by molecular‐beam epitaxy

E. T. Croke; R. J. Hauenstein; T. C. Fu; T. C. McGill

J. Vac. Sci. Technol. B 9, 2301–2306 (1991) https://doi.org/10.1116/1.585737

Abstract

View articletitled, Observation of a (2×8) surface reconstruction on Si1−xGex alloys grown on (100) Si by molecular‐beam epitaxy

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Surface and interface structure of epitaxial CoSi₂ films on Si(111)

R. Stalder; N. Onda; H. Sirringhaus; H. von Känel; C. W. T. Bulle‐Lieuwma

J. Vac. Sci. Technol. B 9, 2307–2311 (1991) https://doi.org/10.1116/1.585738

Abstract

View articletitled, Surface and interface structure of epitaxial CoSi2 films on Si(111)

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Relation between reflection high‐energy electron diffraction specular beam intensity and the surface atomic structure/surface morphology of GaAs(111)B

P. Chen; K. C. Rajkumar; A. Madhukar

J. Vac. Sci. Technol. B 9, 2312–2316 (1991) https://doi.org/10.1116/1.585739

Abstract

View articletitled, Relation between reflection high‐energy electron diffraction specular beam intensity and the surface atomic structure/surface morphology of GaAs(111)B

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Role of electric fields in enhancing the doping of semiconductors during epitaxial growth

Y. Rajakarunanayake

J. Vac. Sci. Technol. B 9, 2317–2322 (1991) https://doi.org/10.1116/1.585740

Abstract

View articletitled, Role of electric fields in enhancing the doping of semiconductors during epitaxial growth

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The role of As in molecular‐beam epitaxy GaAs layers grown at low temperature

Zuzanna Liliental‐Weber; Greg Cooper; Raymond Mariella, Jr.; Chris Kocot

J. Vac. Sci. Technol. B 9, 2323–2327 (1991) https://doi.org/10.1116/1.585741

Abstract

View articletitled, The role of As in molecular‐beam epitaxy GaAs layers grown at low temperature

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Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAs

K. Mahalingam; N. Otsuka; M. R. Melloch; J. M. Woodall; A. C. Warren

J. Vac. Sci. Technol. B 9, 2328–2332 (1991) https://doi.org/10.1116/1.585742

Abstract

View articletitled, Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAs

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Passivation of GaAs surface recombination with organic thiols

Sharon R. Lunt; Patrick G. Santangelo; Nathan S. Lewis

J. Vac. Sci. Technol. B 9, 2333–2336 (1991) https://doi.org/10.1116/1.585743

Abstract

View articletitled, Passivation of GaAs surface recombination with organic thiols

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Sulfur bonding to GaAs

J. Shin; K. M. Geib; C. W. Wilmsen

J. Vac. Sci. Technol. B 9, 2337–2341 (1991) https://doi.org/10.1116/1.585744

Abstract

View articletitled, Sulfur bonding to GaAs

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Ballistic electron emission spectroscopy of metals on GaP(110)

R. Ludeke; M. Prietsch; A. Samsavar

J. Vac. Sci. Technol. B 9, 2342–2348 (1991) https://doi.org/10.1116/1.585745

Abstract

View articletitled, Ballistic electron emission spectroscopy of metals on GaP(110)

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Morphology, chemistry, and band bending at Ag– and In–(100)GaSb interfaces

Y. Chang; D. Mao; A. Kahn; J. J. Bonnet; L. Soonckindt; G. Le Lay

J. Vac. Sci. Technol. B 9, 2349–2354 (1991) https://doi.org/10.1116/1.585746

Abstract

View articletitled, Morphology, chemistry, and band bending at Ag– and In–(100)GaSb interfaces

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Surface Fermi level engineering: Or there is more to Schottky barriers than just making diodes and field effect transistor gates

J. L. Freeouf; A. C. Warren; P. D. Kirchner; J. M. Woodall; M. R. Melloch

J. Vac. Sci. Technol. B 9, 2355–2357 (1991) https://doi.org/10.1116/1.585703

Abstract

View articletitled, Surface Fermi level engineering: Or there is more to Schottky barriers than just making diodes and field effect transistor gates

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Scanning cathodoluminescence microscopy: A unique approach to atomic‐scale characterization of heterointerfaces and imaging of semiconductor inhomogeneities

J. Christen; M. Grundmann; D. Bimberg

J. Vac. Sci. Technol. B 9, 2358–2368 (1991) https://doi.org/10.1116/1.585704

Abstract

View articletitled, Scanning cathodoluminescence microscopy: A unique approach to atomic‐scale characterization of heterointerfaces and imaging of semiconductor inhomogeneities

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Intrinsic recombination and interface characterization in ‘‘surface‐free’’ GaAs structures

D. J. Wolford; G. D. Gilliland; T. F. Kuech; L. M. Smith; J. Martinsen; J. A. Bradley; C. F. Tsang; R. Venkatasubramanian; S. K. Ghandi; H. P. Hjalmarson

J. Vac. Sci. Technol. B 9, 2369–2376 (1991) https://doi.org/10.1116/1.585705

Abstract

View articletitled, Intrinsic recombination and interface characterization in ‘‘surface‐free’’ GaAs structures

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Intrinsic, heterointerface excitonic states in GaAs(n)/Al_0.3Ga_0.7As( p) double heterostructures

G. D. Gilliland; D. J. Wolford; T. F. Kuech; J. A. Bradley

J. Vac. Sci. Technol. B 9, 2377–2383 (1991) https://doi.org/10.1116/1.585706

Abstract

View articletitled, Intrinsic, heterointerface excitonic states in GaAs(n)/Al0.3Ga0.7As( p) double heterostructures

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Surface related core level shifts for the Si(111)√3×√3: Al system

J. N. Andersen; C. Wigren; U. O. Karlsson

J. Vac. Sci. Technol. B 9, 2384–2387 (1991) https://doi.org/10.1116/1.585707

Abstract

View articletitled, Surface related core level shifts for the Si(111)√3×√3: Al system

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Photoluminescence from epitaxial Si/Si_0.95Ge_0.05 heterostructures as probed by optically active deep levels

G. A. Northrop; D. J. Wolford; S. S. Iyer

J. Vac. Sci. Technol. B 9, 2388–2393 (1991) https://doi.org/10.1116/1.585708

Abstract

View articletitled, Photoluminescence from epitaxial Si/Si0.95Ge0.05 heterostructures as probed by optically active deep levels

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Kinematic theory of ballistic electron emission spectroscopy of silicon–silicide interfaces

M. D. Stiles; D. R. Hamann

J. Vac. Sci. Technol. B 9, 2394–2398 (1991) https://doi.org/10.1116/1.585709

Abstract

View articletitled, Kinematic theory of ballistic electron emission spectroscopy of silicon–silicide interfaces

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The image potential in scanning tunneling microscopy of semiconductor surfaces

Z.‐H. Huang; M. Weimer; R. E. Allen

J. Vac. Sci. Technol. B 9, 2399–2404 (1991) https://doi.org/10.1116/1.585710

Abstract

View articletitled, The image potential in scanning tunneling microscopy of semiconductor surfaces

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Band structure effects in interband tunnel devices

D. Z.‐Y. Ting; E. T. Yu; T. C. McGill

J. Vac. Sci. Technol. B 9, 2405–2410 (1991) https://doi.org/10.1116/1.585711

Abstract

View articletitled, Band structure effects in interband tunnel devices

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Bulk and interfacial properties of the compositionally graded In_xAl_1−xAs (x≤0.52) quasi‐insulator and its applications

P. Z. Lee; C. L. Lin; J. C. P. Chang; L. G. Meiners; H. H. Wieder

J. Vac. Sci. Technol. B 9, 2411–2414 (1991) https://doi.org/10.1116/1.585712

Abstract

View articletitled, Bulk and interfacial properties of the compositionally graded InxAl1−xAs (x≤0.52) quasi‐insulator and its applications

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A new probe of metallization microstructure on semiconductor surfaces

G. Haugstad; A. Raisanen; L. Sorba; L. Vanzetti; X. Yu; A. Franciosi

J. Vac. Sci. Technol. B 9, 2415–2422 (1991) https://doi.org/10.1116/1.585713

Abstract

View articletitled, A new probe of metallization microstructure on semiconductor surfaces

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Growth of As overlayers on vicinal Si(100) surfaces

O. L. Alerhand; J. Wang; J. D. Joannopoulos; Efthimios Kaxiras

J. Vac. Sci. Technol. B 9, 2423–2426 (1991) https://doi.org/10.1116/1.585714

Abstract

View articletitled, Growth of As overlayers on vicinal Si(100) surfaces

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Incorporation/desorption rate variation at heterointerfaces in III–V molecular‐beam epitaxy

K. R. Evans; C. E. Stutz; E. N. Taylor; J. E. Ehret

J. Vac. Sci. Technol. B 9, 2427–2432 (1991) https://doi.org/10.1116/1.585715

Abstract

View articletitled, Incorporation/desorption rate variation at heterointerfaces in III–V molecular‐beam epitaxy

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Growth in ultrahigh vacuum and structural characterization of FeSi₂ on Si(111)

S. Lagomarsino; F. Scarinci; C. Giannini; P. Castrucci; G. Savelli; J. Derrien; J. Chevrier; V. Le Thanh; M. G. Grimaldi

J. Vac. Sci. Technol. B 9, 2433–2436 (1991) https://doi.org/10.1116/1.585716

Abstract

View articletitled, Growth in ultrahigh vacuum and structural characterization of FeSi2 on Si(111)

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Interface formation and film morphology for growth of Fe and Co on ZnSe(001)

B. T. Jonker; G. A. Prinz; Y. U. Idzerda

J. Vac. Sci. Technol. B 9, 2437–2444 (1991) https://doi.org/10.1116/1.585717

Abstract

View articletitled, Interface formation and film morphology for growth of Fe and Co on ZnSe(001)

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Spontaneous change of growth orientation of In_0.5Ga_0.5P/GaAs superlattices in molecular beam epitaxy

Y. Nakamura; K. Mahalingam; N. Otsuka; H. Y. Lee; M. J. Hafich; G. Y. Robinson

J. Vac. Sci. Technol. B 9, 2445–2449 (1991) https://doi.org/10.1116/1.585718

Abstract

View articletitled, Spontaneous change of growth orientation of In0.5Ga0.5P/GaAs superlattices in molecular beam epitaxy

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