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March 1989
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
ISSN 0734-211X
EISSN 2327-9877
Reflectivity reduction by oxygen plasma treatment of capped metallization layer
J. Vac. Sci. Technol. B 7, 145–149 (1989)
https://doi.org/10.1116/1.584706
Stability of hydrogen in silicon nitride films deposited by low‐pressure and plasma enhanced chemical vapor deposition techniques
J. Vac. Sci. Technol. B 7, 150–152 (1989)
https://doi.org/10.1116/1.584707
Effects of thermal history on stress‐related properties of very thin films of thermally grown silicon dioxide
J. Vac. Sci. Technol. B 7, 153–162 (1989)
https://doi.org/10.1116/1.584708
The investigation of mixed halogen freon/oxygen tungsten reactive ion etching chemistries with extension to silicon
J. Vac. Sci. Technol. B 7, 167–174 (1989)
https://doi.org/10.1116/1.584710
Oxygen plasma etching resistance of plasma polymerized organometallic film
J. Vac. Sci. Technol. B 7, 175–180 (1989)
https://doi.org/10.1116/1.584711
Focused ion beam secondary ion mass spectrometry: Ion images and end‐point detection
J. Vac. Sci. Technol. B 7, 181–187 (1989)
https://doi.org/10.1116/1.584712
Effects of light absorption in the resist layer in optical lithography
J. Vac. Sci. Technol. B 7, 188–190 (1989)
https://doi.org/10.1116/1.584713
A figure of merit for contrast study in two‐dimensional structures
J. Vac. Sci. Technol. B 7, 191–194 (1989)
https://doi.org/10.1116/1.584714
Schottky‐like behavior of the GaP(110)/Ag interface
J. Vac. Sci. Technol. B 7, 195–198 (1989)
https://doi.org/10.1116/1.584715
Molecular‐beam epitaxial growth and interface characteristics of GaAsSb on GaAs substrates
J. Vac. Sci. Technol. B 7, 199–203 (1989)
https://doi.org/10.1116/1.584716
Compositional modulations in GexSi1−x heteroepitaxial layers
J. Vac. Sci. Technol. B 7, 210–213 (1989)
https://doi.org/10.1116/1.584718
A single‐filament effusion cell with reduced thermal gradient for molecular‐beam epitaxy
J. Vac. Sci. Technol. B 7, 214–216 (1989)
https://doi.org/10.1116/1.584719
Dimer and tetramer formation in an AsH3 cracker studied by calibrated quadrupole mass spectrometry
J. Vac. Sci. Technol. B 7, 217–224 (1989)
https://doi.org/10.1116/1.584720
Silicon epitaxial growth on germanium using an Si2H6 low‐pressure chemical vapor deposition technique
J. Vac. Sci. Technol. B 7, 225–228 (1989)
https://doi.org/10.1116/1.584721
Current induced heating of the codeposited metal–silicon runners to form low‐resistivity crystallized disilicides
J. Vac. Sci. Technol. B 7, 232–235 (1989)
https://doi.org/10.1116/1.584723
Erratum: Dry etching induced damage on vertical sidewalls of GaAs channels [J. Vac. Sci. Technol. B 6, 1916 (1988)]
J. Vac. Sci. Technol. B 7, 236 (1989)
https://doi.org/10.1116/1.584724
Properties of HgTe–Hg0.15Cd0.85Te superlattices grown by molecular‐beam epitaxy
Y. Lansari; J. W. Han; S. Hwang; L. S. Kim; J. W. Cook, Jr.; J. F. Schetzina; J. N. Schulman; N. Otsuka
J. Vac. Sci. Technol. B 7, 241–243 (1989)
https://doi.org/10.1116/1.584725
Properties of II–VI semiconductor films grown by photoassisted molecular‐beam epitaxy
R. L. Harper, Jr.; Jeong W. Han; S. Hwang; Y. Lansari; N. C. Giles; J. W. Cook, Jr.; J. F. Schetzina
J. Vac. Sci. Technol. B 7, 244–248 (1989)
https://doi.org/10.1116/1.584726
Molecular‐beam epitaxy of InSb/CdTe heterostructures
J. L. Glenn, Jr.; Sungki O; L. A. Kolodziejski; R. L. Gunshor; M. Kobayashi; D. Li; N. Otsuka; M. Haggerott; N. Pelekanos; A. V. Nurmikko
J. Vac. Sci. Technol. B 7, 249–252 (1989)
https://doi.org/10.1116/1.584727
Electrical and optical characterization of molecular‐beam epitaxy grown Ga‐doped ZnSe.
J. Vac. Sci. Technol. B 7, 253–258 (1989)
https://doi.org/10.1116/1.584728
Cation incorporation rate limitations in molecular‐beam epitaxy: Effects of strain and surface composition
J. Vac. Sci. Technol. B 7, 259–263 (1989)
https://doi.org/10.1116/1.584729
Kinetic aspects of growth front surface morphology and defect formation during molecular‐beam epitaxy growth of strained thin films
J. Vac. Sci. Technol. B 7, 264–268 (1989)
https://doi.org/10.1116/1.584730
In situ infrared spectroscopy of molecular‐beam epitaxy grown GaAs
J. Vac. Sci. Technol. B 7, 273–276 (1989)
https://doi.org/10.1116/1.584732
Application of reflection mass spectrometry to molecular‐beam epitaxial growth of InAlAs and InGaAs
J. Vac. Sci. Technol. B 7, 277–282 (1989)
https://doi.org/10.1116/1.584733
Optical and structural properties of molecular‐beam epitaxial GaAs on sapphire
J. Vac. Sci. Technol. B 7, 283–288 (1989)
https://doi.org/10.1116/1.584734
Investigation of short period AlAs/GaAs superlattices as conduction‐band barriers
M. J. Paulus; C. I. Huang; C. A. Bozada; M. E. Cheney; S. C. Dudley; C. E. Stutz; K. R. Evans; R. L. Jones
J. Vac. Sci. Technol. B 7, 299–305 (1989)
https://doi.org/10.1116/1.584737
Photoluminescence and photoluminescence excitation studies on GaAs/AlAs short period superlattices near the direct/indirect crossover
J. Vac. Sci. Technol. B 7, 306–310 (1989)
https://doi.org/10.1116/1.584738
Growth of quasi‐three‐dimensional modulation‐doped semiconductor structures by molecular‐beam epitaxy
J. Vac. Sci. Technol. B 7, 311–314 (1989)
https://doi.org/10.1116/1.584739
Observation of polarization dependence of absorption in a quantum well wire array grown directly by molecular‐beam epitaxy
J. Vac. Sci. Technol. B 7, 315–318 (1989)
https://doi.org/10.1116/1.584740
Epitaxial growth of high‐temperature superconducting thin films
J. N. Eckstein; D. G. Schlom; E. S. Hellman; K. E. von Dessonneck; Z. J. Chen; C. Webb; F. Turner; J. S. Harris, Jr.; M. R. Beasley; T. H. Geballe
J. Vac. Sci. Technol. B 7, 319–323 (1989)
https://doi.org/10.1116/1.584741
Growth and transport properties of (Ga,Al)Sb barriers on InAs
J. Vac. Sci. Technol. B 7, 324–326 (1989)
https://doi.org/10.1116/1.584742
Si/GexSi1−x/Si resonant tunneling diode doped by thermal boron source
J. Vac. Sci. Technol. B 7, 327–331 (1989)
https://doi.org/10.1116/1.584743
Dynamics of growth roughening and smoothening on Ge (001)
J. Vac. Sci. Technol. B 7, 332–336 (1989)
https://doi.org/10.1116/1.584744
Structural and optical properties of III–V quantum wells grown on Si
J. Vac. Sci. Technol. B 7, 337–340 (1989)
https://doi.org/10.1116/1.584745
Growth and characterization of doped GaAs/AlGaAs multiple quantum well structures on Si substrates for infrared detection
J. Vac. Sci. Technol. B 7, 341–344 (1989)
https://doi.org/10.1116/1.584746
Molecular‐beam epitaxial growth and characterization of InSb on Si
J. Vac. Sci. Technol. B 7, 345–347 (1989)
https://doi.org/10.1116/1.584747
Growth and characterization of epitaxial bismuth films
J. Vac. Sci. Technol. B 7, 348–353 (1989)
https://doi.org/10.1116/1.584748
Heteroepitaxy of GaAs on InP by molecular‐beam epitaxy
J. P. Harbison; Y. H. Lo; J. H. Abeles; R. J. Deri; B. J. Skromme; D. M. Hwang; L. T. Florez; M. Seto; L. Nazar; T. P. Lee; R. E. Nahory
J. Vac. Sci. Technol. B 7, 354–357 (1989)
https://doi.org/10.1116/1.584749
Growth of InGaP on GaAs using gas‐source molecular‐beam epitaxy
J. Vac. Sci. Technol. B 7, 358–360 (1989)
https://doi.org/10.1116/1.584750
Use of Raman spectroscopy to characterize strain in III–V epilayers: Application to InAs on GaAs(001) grown by molecular‐beam epitaxy
J. Vac. Sci. Technol. B 7, 365–370 (1989)
https://doi.org/10.1116/1.584752
The electrical properties of molecular‐beam epitaxy grown InxGa1−xAs on GaAs
J. Vac. Sci. Technol. B 7, 376–379 (1989)
https://doi.org/10.1116/1.584754
Optical and electrical characterization of pseudomorphic AlGaAs/InGaAs/GaAs modulation‐doped structures processed by rapid thermal annealing
J. Vac. Sci. Technol. B 7, 380–383 (1989)
https://doi.org/10.1116/1.584755
The effect of inhibited growth kinetics on GaInAs and AlInAs alloy and interface quality
J. Vac. Sci. Technol. B 7, 384–387 (1989)
https://doi.org/10.1116/1.584756
Molecular‐beam epitaxy growth of high‐quality two‐dimensional electron system
J. Vac. Sci. Technol. B 7, 388–390 (1989)
https://doi.org/10.1116/1.584757
Luminescence of (Al,Ga)As and GaAs grown on the vicinal (511)B‐GaAs surface by molecular‐beam epitaxy
J. Vac. Sci. Technol. B 7, 395–398 (1989)
https://doi.org/10.1116/1.584759
Reduction and origin of electron and hole traps in GaAs grown by molecular‐beam epitaxy
J. Vac. Sci. Technol. B 7, 399–404 (1989)
https://doi.org/10.1116/1.584760
Technique for monolithically integrating GaAs/AlGaAs lasers of different wavelengths
J. Vac. Sci. Technol. B 7, 409–411 (1989)
https://doi.org/10.1116/1.584762
Molecular‐beam epitaxy grown Fabry–Perot multiple quantum well reflection modulator
J. Vac. Sci. Technol. B 7, 412–414 (1989)
https://doi.org/10.1116/1.584763
An In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistor on GaAs substrate by molecular‐beam epitaxy
J. Vac. Sci. Technol. B 7, 415–416 (1989)
https://doi.org/10.1116/1.584764
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.
Vertical silicon nanowedge formation by repetitive dry and wet anisotropic etching combined with 3D self-aligned sidewall nanopatterning
Yasser Pordeli, Céline Steenge, et al.