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Radiation effects on metal–insulator–semiconductor diode energetic ion detectors

R. C. Hughes

J. Vac. Sci. Technol. B 6, 513–516 (1988) https://doi.org/10.1116/1.584061

Abstract

View articletitled, Radiation effects on metal–insulator–semiconductor diode energetic ion detectors

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Plasma deposition of SiO₂ gate insulators for a‐Si thin‐film transistors

J. Dresner

J. Vac. Sci. Technol. B 6, 517–523 (1988) https://doi.org/10.1116/1.584062

Abstract

View articletitled, Plasma deposition of SiO2 gate insulators for a‐Si thin‐film transistors

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Frequency effects and properties of plasma deposited fluorinated silicon nitride

Chorng‐Ping Chang; Daniel L. Flamm; Dale E. Ibbotson; John A. Mucha

J. Vac. Sci. Technol. B 6, 524–532 (1988) https://doi.org/10.1116/1.584063

Abstract

View articletitled, Frequency effects and properties of plasma deposited fluorinated silicon nitride

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A new ultrafine groove fabrication method utilizing electron cyclotron resonance plasma deposition and reactive ion etching

Shigehisa Ohki; Masatoshi Oda; Toshitaka Shibata

J. Vac. Sci. Technol. B 6, 533–536 (1988) https://doi.org/10.1116/1.584064

Abstract

View articletitled, A new ultrafine groove fabrication method utilizing electron cyclotron resonance plasma deposition and reactive ion etching

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Controlled etching of silicate glasses by pulsed ultraviolet laser radiation

B. Braren; R. Srinivasan

J. Vac. Sci. Technol. B 6, 537–541 (1988) https://doi.org/10.1116/1.584065

Abstract

View articletitled, Controlled etching of silicate glasses by pulsed ultraviolet laser radiation

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A Monte Carlo microtopography model for investigating plasma/reactive ion etch profile evolution

Tina J. Cotler; Michael S. Barnes; Michael E. Elta

J. Vac. Sci. Technol. B 6, 542–550 (1988) https://doi.org/10.1116/1.584066

Abstract

View articletitled, A Monte Carlo microtopography model for investigating plasma/reactive ion etch profile evolution

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Spectroscopic studies of fluorescent emission in plasma etching of silicon nitride

D. Field; D. F. Klemperer; I. T. Wade

J. Vac. Sci. Technol. B 6, 551–558 (1988) https://doi.org/10.1116/1.584398

Abstract

View articletitled, Spectroscopic studies of fluorescent emission in plasma etching of silicon nitride

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Excimer laser lithography using contrast enhancing material

M. Endo; M. Sasago; H. Nakagawa; Y. Hirai; K. Ogawa; T. Ishihara

J. Vac. Sci. Technol. B 6, 559–563 (1988) https://doi.org/10.1116/1.584399

Abstract

View articletitled, Excimer laser lithography using contrast enhancing material

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Calculation of image profiles for contrast enhanced lithography

S. V. Babu; E. Barouch; B. Bradie

J. Vac. Sci. Technol. B 6, 564–568 (1988) https://doi.org/10.1116/1.584400

Abstract

View articletitled, Calculation of image profiles for contrast enhanced lithography

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Oxidation of TiSi₂: The role of implanted As and its behavior during oxidation

O. W. Holland; D. Fathy; S. P. Withrow; T. P. Sjoreen

J. Vac. Sci. Technol. B 6, 569–573 (1988) https://doi.org/10.1116/1.584401

Abstract

View articletitled, Oxidation of TiSi2: The role of implanted As and its behavior during oxidation

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SiO₂ film stress distribution during thermal oxidation of Si

E. Kobeda; E. A. Irene

J. Vac. Sci. Technol. B 6, 574–578 (1988) https://doi.org/10.1116/1.584402

Abstract

View articletitled, SiO2 film stress distribution during thermal oxidation of Si

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A structure for measuring contact resistances immediately following metal deposition

John R. Schlais; Gerold W. Neudeck; S. T. Liu

J. Vac. Sci. Technol. B 6, 579–581 (1988) https://doi.org/10.1116/1.584403

Abstract

View articletitled, A structure for measuring contact resistances immediately following metal deposition

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Oxygen contamination of Ge during thermal evaporation for Ohmic contacts to GaAs

W. C. Moshier; D.‐W. Tu; G. D. Davis

J. Vac. Sci. Technol. B 6, 582–583 (1988) https://doi.org/10.1116/1.584404

View articletitled, Oxygen contamination of Ge during thermal evaporation for Ohmic contacts to GaAs

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Molecular‐beam epitaxy growth of GaAs/InAs structures on (001)InP by alternating III/V fluxes

R. Katsumi; H. Ohno; H. Ishii; K. Matsuzaki; Y. Akatsu; H. Hasegawa

J. Vac. Sci. Technol. B 6, 593–596 (1988) https://doi.org/10.1116/1.584405

Abstract

View articletitled, Molecular‐beam epitaxy growth of GaAs/InAs structures on (001)InP by alternating III/V fluxes

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Summary Abstract: Improved material properties of GaAs grown on novel substrate orientations

P. N. Uppal; J. S. Ahearn; J. W. Little

J. Vac. Sci. Technol. B 6, 597–598 (1988) https://doi.org/10.1116/1.584406

View articletitled, Summary Abstract: Improved material properties of GaAs grown on novel substrate orientations

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Quantum size effect in δ‐doped AlGaAs heterostructures

J. E. Cunningham; W. T. Tsang; E. F. Schubert; G. Timp; T. H. Chiu; A. Chang; E. Agyekum; J. A. Ditzenberger

J. Vac. Sci. Technol. B 6, 599–602 (1988) https://doi.org/10.1116/1.584407

Abstract

View articletitled, Quantum size effect in δ‐doped AlGaAs heterostructures

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Improvements to and characterization of GaInAs/AlInAs heterointerfaces grown by molecular‐beam epitaxy

E. G. Scott; S. T. Davey; M. A. G. Halliwell; G. J. Davies

J. Vac. Sci. Technol. B 6, 603–606 (1988) https://doi.org/10.1116/1.584408

Abstract

View articletitled, Improvements to and characterization of GaInAs/AlInAs heterointerfaces grown by molecular‐beam epitaxy

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Summary Abstract: Excimer‐laser‐modified molecular‐beam epitaxy and metal–organic molecular‐beam epitaxy of (Al)GaAs on (Ca,Sr)F₂/GaAs and GaAs substrates

C. W. Tu; V. M. Donnelly; J. C. Beggy; F. A. Baiocchi; V. R. McCrary; T. D. Harris; M. G. Lamont

J. Vac. Sci. Technol. B 6, 607 (1988) https://doi.org/10.1116/1.584409

View articletitled, Summary Abstract: Excimer‐laser‐modified molecular‐beam epitaxy and metal–organic molecular‐beam epitaxy of (Al)GaAs on (Ca,Sr)F2/GaAs and GaAs substrates

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Summary Abstract: A model for the surface chemical kinetics of GaAs deposition by chemical‐beam epitaxy

A. Robertson, Jr.; T. H. Chiu; W. T. Tsang; J. E. Cunningham

J. Vac. Sci. Technol. B 6, 608–609 (1988) https://doi.org/10.1116/1.584410

View articletitled, Summary Abstract: A model for the surface chemical kinetics of GaAs deposition by chemical‐beam epitaxy

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Intrawell exciton transport in monolayer‐flat GaAs/AlGaAs single quantum wells grown by molecular‐beam epitaxy

C. W. Tu; R. C. Miller; P. M. Petroff; R. F. Kopf; B. Deveaud; T. C. Damen; J. Shah

J. Vac. Sci. Technol. B 6, 610–612 (1988) https://doi.org/10.1116/1.584411

Abstract

View articletitled, Intrawell exciton transport in monolayer‐flat GaAs/AlGaAs single quantum wells grown by molecular‐beam epitaxy

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Summary Abstract: A Raman study of the effects of growth stops on the interfaces of AlAs/GaAs superlattices grown by molecular‐beam epitaxy

G. W. Wicks; J. T. Bradshaw; D. C. Radulescu

J. Vac. Sci. Technol. B 6, 613–614 (1988) https://doi.org/10.1116/1.584412

View articletitled, Summary Abstract: A Raman study of the effects of growth stops on the interfaces of AlAs/GaAs superlattices grown by molecular‐beam epitaxy

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Summary Abstract: Influence of substrate misorientation on defect and impurity incorporation in AlGaAs/GaAs heterojunctions grown by molecular‐beam epitaxy

D. C. Radulescu; G. W. Wicks; W. J. Schaff; A. R. Calawa; L. F. Eastman

J. Vac. Sci. Technol. B 6, 615–616 (1988) https://doi.org/10.1116/1.584413

View articletitled, Summary Abstract: Influence of substrate misorientation on defect and impurity incorporation in AlGaAs/GaAs heterojunctions grown by molecular‐beam epitaxy

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Molecular‐beam epitaxial growth and characterization of pseudomorphic InAs/In_0.52Al_0.48 As quantum wells

J. L. de Miguel; M.‐H. Meynadier; M. C. Tamargo; R. E. Nahory; D. M. Hwang

J. Vac. Sci. Technol. B 6, 617–619 (1988) https://doi.org/10.1116/1.584414

Abstract

View articletitled, Molecular‐beam epitaxial growth and characterization of pseudomorphic InAs/In0.52Al0.48 As quantum wells

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Growth and characterization of AlGaAs/InGaAs/GaAs pseudomorphic structures

A. Fischer‐Colbrie; J. N. Miller; S. S. Laderman; S. J. Rosner; R. Hull

J. Vac. Sci. Technol. B 6, 620–624 (1988) https://doi.org/10.1116/1.584415

Abstract

View articletitled, Growth and characterization of AlGaAs/InGaAs/GaAs pseudomorphic structures

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Summary Abstract: The growth of strained InGaAs on GaAs: Kinetics versus energetics

G. J. Whaley; P. I. Cohen

J. Vac. Sci. Technol. B 6, 625–626 (1988) https://doi.org/10.1116/1.584416

View articletitled, Summary Abstract: The growth of strained InGaAs on GaAs: Kinetics versus energetics

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Study of molecular‐beam epitaxy GaAs_1−xSb_x (x<0.76) grown on GaAs(100)

J. H. Zhao; A. Z. Li; J. Jeong; D. Wong; J. C. Lee; M. L. Milliman; T. E. Schlesinger; A. G. Milnes

J. Vac. Sci. Technol. B 6, 627–630 (1988) https://doi.org/10.1116/1.584417

Abstract

View articletitled, Study of molecular‐beam epitaxy GaAs1−xSbx (x<0.76) grown on GaAs(100)

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Characterization of Al_0.25Ga_0.75As grown by molecular‐beam epitaxy

M. J. Lin; E. C. Larkins; Y. C. Pao; D. Liu; G. Yoffe; T. K. Ma; J. S. Harris, Jr.

J. Vac. Sci. Technol. B 6, 631–635 (1988) https://doi.org/10.1116/1.584418

Abstract

View articletitled, Characterization of Al0.25Ga0.75As grown by molecular‐beam epitaxy

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Summary Abstract: Growth of GaAs and AlGaAs on misoriented (110) GaAs by molecular‐beam epitaxy

E. C. Larkins; Y. C. Pao; D. Liu; M. J. Lin; G. Yoffe; J. S. Harris, Jr.

J. Vac. Sci. Technol. B 6, 636–637 (1988) https://doi.org/10.1116/1.584375

View articletitled, Summary Abstract: Growth of GaAs and AlGaAs on misoriented (110) GaAs by molecular‐beam epitaxy

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Growth of GaAs, AlGaAs, and InGaAs on (111)B GaAs by molecular‐beam epitaxy

K. Elcess; J.‐L. Liévin; C. G. Fonstad

J. Vac. Sci. Technol. B 6, 638–641 (1988) https://doi.org/10.1116/1.584376

Abstract

View articletitled, Growth of GaAs, AlGaAs, and InGaAs on (111)B GaAs by molecular‐beam epitaxy

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Summary Abstract: Reflection high‐energy electron diffraction intensity oscillation during the growth of GaAs by chemical‐beam epitaxy

T. H. Chiu; W. T. Tsang; J. E. Cunningham; A. Robertson, Jr.

J. Vac. Sci. Technol. B 6, 642–643 (1988) https://doi.org/10.1116/1.584377

View articletitled, Summary Abstract: Reflection high‐energy electron diffraction intensity oscillation during the growth of GaAs by chemical‐beam epitaxy

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Preparation of molecular‐beam epitaxy growth high‐quality GaAs–AlGaAs quantum wells and their properties investigation

Y. H. Huang; M. Y. Kong; D. Z. Sun; J. B. Liang; Y. P. Zhen

J. Vac. Sci. Technol. B 6, 644–646 (1988) https://doi.org/10.1116/1.584378

Abstract

View articletitled, Preparation of molecular‐beam epitaxy growth high‐quality GaAs–AlGaAs quantum wells and their properties investigation

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Summary Abstract: The chemical nature and atomic structure of midgap levels in molecular‐beam epitaxially grown Al_xGa_1−xAs

M. G. Spencer; T. A. Kennedy; R. Magno

J. Vac. Sci. Technol. B 6, 647–648 (1988) https://doi.org/10.1116/1.584379

View articletitled, Summary Abstract: The chemical nature and atomic structure of midgap levels in molecular‐beam epitaxially grown AlxGa1−xAs

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Summary Abstract: Effect of electric field on the exciton transition energies and oscillator strengths of undoped GaAs–AlGaAs quantum well structures determined by photocurrent spectroscopy

P. W. Yu; G. D. Sanders; K. R. Evans; D. C. Reynolds; K. K. Bajaj; C. E. Stutz; R. L. Jones

J. Vac. Sci. Technol. B 6, 649–650 (1988) https://doi.org/10.1116/1.584380

View articletitled, Summary Abstract: Effect of electric field on the exciton transition energies and oscillator strengths of undoped GaAs–AlGaAs quantum well structures determined by photocurrent spectroscopy

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Capacitive hysteresis effects in 5.0 nm single and double barrier AlAs/GaAs tunneling structures grown by molecular‐beam epitaxy

A. C. Campbell; V. P. Kesan; G. E. Crook; C. M. Maziar; D. P. Neikirk; B. G. Streetman

J. Vac. Sci. Technol. B 6, 651–656 (1988) https://doi.org/10.1116/1.584381

Abstract

View articletitled, Capacitive hysteresis effects in 5.0 nm single and double barrier AlAs/GaAs tunneling structures grown by molecular‐beam epitaxy

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High‐performance Ga_0.4In_0.6As/Al_0.55In_0.45As pseudomorphic modulation‐doped field‐effect transistors prepared by molecular‐beam epitaxy

J. M. Kuo; M. D. Feuer; T. Y. Chang

J. Vac. Sci. Technol. B 6, 657–659 (1988) https://doi.org/10.1116/1.584382

Abstract

View articletitled, High‐performance Ga0.4In0.6As/Al0.55In0.45As pseudomorphic modulation‐doped field‐effect transistors prepared by molecular‐beam epitaxy

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Molecular‐beam epitaxial growth and exciton lifetime studies of lattice‐matched and coherently strained quantum wells

Y. Chen; J. Oh; J. Singh; P. K. Bhattacharya

J. Vac. Sci. Technol. B 6, 660–664 (1988) https://doi.org/10.1116/1.584383

Abstract

View articletitled, Molecular‐beam epitaxial growth and exciton lifetime studies of lattice‐matched and coherently strained quantum wells

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Summary Abstract: Molecular‐beam epitaxial growth of high‐quality In_0.52Al_0.48As and In_1−x−yGa_xAl_yAs

Albert Chin; Pallab Bhattacharya; Won‐Pyo Hong; Wei‐Qi Li

J. Vac. Sci. Technol. B 6, 665–667 (1988) https://doi.org/10.1116/1.584384

View articletitled, Summary Abstract: Molecular‐beam epitaxial growth of high‐quality In0.52Al0.48As and In1−x−yGaxAlyAs

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Summary Abstract: Characterization of growth parameters in strained‐layer superlattices using Raman scattering

G. P. Schwartz; G. J. Gualtieri; W. A. Sunder

J. Vac. Sci. Technol. B 6, 668–669 (1988) https://doi.org/10.1116/1.584385

View articletitled, Summary Abstract: Characterization of growth parameters in strained‐layer superlattices using Raman scattering

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High‐mobility inverted selectively doped heterojunctions

Hadas Shtrikman; M. Heiblum; K. Seo; D. E. Galbi; L. Osterling

J. Vac. Sci. Technol. B 6, 670–673 (1988) https://doi.org/10.1116/1.584386

Abstract

View articletitled, High‐mobility inverted selectively doped heterojunctions

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Summary Abstract: Hot‐electron transport in the AlSb/InAs/GaSb double heterostructure prepared by molecular‐beam epitaxy

T. H. Chiu; A. F. J. Levi

J. Vac. Sci. Technol. B 6, 674–675 (1988) https://doi.org/10.1116/1.584387

View articletitled, Summary Abstract: Hot‐electron transport in the AlSb/InAs/GaSb double heterostructure prepared by molecular‐beam epitaxy

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Summary Abstract: Negative transconductance resonant tunneling field effect transistors and monolithically integrated resonant tunneling diodes

Susanta Sen; Federico Capasso; Alfred Y. Cho

J. Vac. Sci. Technol. B 6, 676–677 (1988) https://doi.org/10.1116/1.584388

View articletitled, Summary Abstract: Negative transconductance resonant tunneling field effect transistors and monolithically integrated resonant tunneling diodes

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The impact of epitaxial layer design and quality on GaInAs/AlInAs high‐electron‐mobility transistor performance

A. S. Brown; U. K. Mishra; J. A. Henige; M. J. Delaney

J. Vac. Sci. Technol. B 6, 678–681 (1988) https://doi.org/10.1116/1.584389

Abstract

View articletitled, The impact of epitaxial layer design and quality on GaInAs/AlInAs high‐electron‐mobility transistor performance

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AlGaAs/GaAs heterojunction bipolar transistor with a planar‐doped two‐dimensional hole gas base grown by molecular‐beam epitaxy

R. J. Malik; L. M. Lunardi; J. F. Walker; R. W. Ryan

J. Vac. Sci. Technol. B 6, 682–684 (1988) https://doi.org/10.1116/1.584390

Abstract

View articletitled, AlGaAs/GaAs heterojunction bipolar transistor with a planar‐doped two‐dimensional hole gas base grown by molecular‐beam epitaxy

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Acoustic charge transport in an (Al,Ga)As/GaAs heterojunction structure grown by molecular‐beam epitaxy

R. N. Sacks; W. J. Tanski; S. W. Merritt; D. E. Cullen; E. J. Branciforte; T. C. Eschrich

J. Vac. Sci. Technol. B 6, 685–687 (1988) https://doi.org/10.1116/1.584391

Abstract

View articletitled, Acoustic charge transport in an (Al,Ga)As/GaAs heterojunction structure grown by molecular‐beam epitaxy

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Summary Abstract: Molecular‐beam epitaxial growth of tunable multilayer interference optical modulators

G. W. Yoffe; D. G. Schlom; J. S. Harris, Jr.

J. Vac. Sci. Technol. B 6, 688 (1988) https://doi.org/10.1116/1.584392

View articletitled, Summary Abstract: Molecular‐beam epitaxial growth of tunable multilayer interference optical modulators

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Ultralow threshold graded‐index separate‐confinement heterostructure single quantum well (Al,Ga)As lasers

P. L. Derry; H. Z. Chen; H. Morkoç; A. Yariv; K. Y. Lau; N. Bar‐Chaim; K. Lee; J. Rosenberg

J. Vac. Sci. Technol. B 6, 689–691 (1988) https://doi.org/10.1116/1.584393

Abstract

View articletitled, Ultralow threshold graded‐index separate‐confinement heterostructure single quantum well (Al,Ga)As lasers

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Problems related to the formation of lateral p–n junctions on channeled substrate (100) GaAs for lasers

H. P. Meier; R. F. Broom; P. W. Epperlein; E. van Gieson; Ch. Harder; H. Jäckel; W. Walter; D. J. Webb

J. Vac. Sci. Technol. B 6, 692–695 (1988) https://doi.org/10.1116/1.584394

Abstract

View articletitled, Problems related to the formation of lateral p–n junctions on channeled substrate (100) GaAs for lasers

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Studies of molecular‐beam epitaxy growth of GaAs on porous Si substrates

Y. J. Mii; T. L. Lin; Y. C. Kao; B. J. Wu; K. L. Wang; C. W. Nieh; D. N. Jamieson; J. K. Liu

J. Vac. Sci. Technol. B 6, 696–698 (1988) https://doi.org/10.1116/1.584395

Abstract

View articletitled, Studies of molecular‐beam epitaxy growth of GaAs on porous Si substrates

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Patterned growth of gallium arsenide on silicon

R. J. Matyi; H. Shichijo; H. L. Tsai

J. Vac. Sci. Technol. B 6, 699–702 (1988) https://doi.org/10.1116/1.584396

Abstract

View articletitled, Patterned growth of gallium arsenide on silicon

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Molecular‐beam epitaxial growth and characterization of GaAs on epitaxial CoSi₂ films on Si(111)

N. Chand; J. M. Phillips; L. M. Lunardi; S. N. G. Chu; K. W. Wecht; R. People

J. Vac. Sci. Technol. B 6, 703–707 (1988) https://doi.org/10.1116/1.584397

Abstract

View articletitled, Molecular‐beam epitaxial growth and characterization of GaAs on epitaxial CoSi2 films on Si(111)

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Molecular‐beam epitaxy of CrSi₂ on Si(111)

R. W. Fathauer; P. J. Grunthaner; T. L. Lin; K. T. Chang; J. H. Mazur; D. N. Jamieson

J. Vac. Sci. Technol. B 6, 708–712 (1988) https://doi.org/10.1116/1.584352

Abstract

View articletitled, Molecular‐beam epitaxy of CrSi2 on Si(111)

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Si crossdoping control and defect control in GaAs/Si heterojunctions grown by molecular‐beam epitaxy

A. Z. Li; J. X. Wang; J. H. Qiu; B. W. Liang; Y. L. Cheng; C. C. Li

J. Vac. Sci. Technol. B 6, 713–716 (1988) https://doi.org/10.1116/1.584353

Abstract

View articletitled, Si crossdoping control and defect control in GaAs/Si heterojunctions grown by molecular‐beam epitaxy

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Processing and characterization of GaAs grown into recessed silicon

J. W. Adkisson; T. I. Kamins; S. M. Koch; J. S. Harris, Jr.; S. J. Rosner; G. A. Reid; K. Nauka

J. Vac. Sci. Technol. B 6, 717–719 (1988) https://doi.org/10.1116/1.584354

Abstract

View articletitled, Processing and characterization of GaAs grown into recessed silicon

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Summary Abstract: Molecular‐beam epitaxial growth of lattice‐matched GaAs/(Ca, Sr)F₂/Ge(100) heterostructures

C. W. Tu; J. C. Beggy; F. A. Baiocchi; S. M. Abys; S. J. Pearton; S. J. Hsieh; R. F. Kopf; R. Caruso; A. S. Jordan

J. Vac. Sci. Technol. B 6, 720 (1988) https://doi.org/10.1116/1.584355

View articletitled, Summary Abstract: Molecular‐beam epitaxial growth of lattice‐matched GaAs/(Ca, Sr)F2/Ge(100) heterostructures

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Summary Abstract: Reflection high‐energy electron diffraction observation of molecular‐beam epitaxially grown Ge_xSi_1−x on Si(111)

T. W. Kang; C. F. Huang; R. P. G. Karunasiri; J. S. Park; C. H. Chern; K. L. Wang

J. Vac. Sci. Technol. B 6, 721–722 (1988) https://doi.org/10.1116/1.584356

View articletitled, Summary Abstract: Reflection high‐energy electron diffraction observation of molecular‐beam epitaxially grown GexSi1−x on Si(111)

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Crystal quality of solid phase epitaxially grown silicon

E. D. Ahlers; R. M. Ostrom; P. Datta; F. G. Allen

J. Vac. Sci. Technol. B 6, 723–726 (1988) https://doi.org/10.1116/1.584357

Abstract

View articletitled, Crystal quality of solid phase epitaxially grown silicon

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Low‐energy electron diffraction investigations of Si molecular‐beam epitaxy onto Si(100)

M. Horn; U. Gotter; M. Henzler

J. Vac. Sci. Technol. B 6, 727–730 (1988) https://doi.org/10.1116/1.584358

Abstract

View articletitled, Low‐energy electron diffraction investigations of Si molecular‐beam epitaxy onto Si(100)

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Summary Abstract: Cleaning of GaAs substrate by thermal oxidation and sublimation in molecular‐beam epitaxy

Junji Saito; Kazuo Nanbu; Tomonori Ishikawa; Kazuo Kondo

J. Vac. Sci. Technol. B 6, 731–732 (1988) https://doi.org/10.1116/1.584359

View articletitled, Summary Abstract: Cleaning of GaAs substrate by thermal oxidation and sublimation in molecular‐beam epitaxy

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Molecular‐beam epitaxial growth mechanisms on the GaAs(100) surface

James P. Harbison; Helen H. Farrell

J. Vac. Sci. Technol. B 6, 733–735 (1988) https://doi.org/10.1116/1.584360

Abstract

View articletitled, Molecular‐beam epitaxial growth mechanisms on the GaAs(100) surface

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Observation of photoelectron oscillations during growth of GaAs

J. N. Eckstein; C. Webb; S.‐L. Weng; K. A. Bertness

J. Vac. Sci. Technol. B 6, 736–739 (1988) https://doi.org/10.1116/1.584361

Abstract

View articletitled, Observation of photoelectron oscillations during growth of GaAs

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Optical reflectance measurements of transients during molecular‐beam epitaxial growth on (001) GaAs

J. P. Harbison; D. E. Aspnes; A. A. Studna; L. T. Florez

J. Vac. Sci. Technol. B 6, 740–742 (1988) https://doi.org/10.1116/1.584362

Abstract

View articletitled, Optical reflectance measurements of transients during molecular‐beam epitaxial growth on (001) GaAs

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Summary Abstract: Ordering in GaAs_0.5Sb_0.5 grown by molecular‐beam epitaxy

Y. E. Ihm; N. Otsuka; Y. Hirotsu; J. Klem; H. Morkoç

J. Vac. Sci. Technol. B 6, 743–744 (1988) https://doi.org/10.1116/1.584363

View articletitled, Summary Abstract: Ordering in GaAs0.5Sb0.5 grown by molecular‐beam epitaxy

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Reproducible growth conditions by group III and group V controlled incorporation rate measurements

Rouel Fernandez

J. Vac. Sci. Technol. B 6, 745–748 (1988) https://doi.org/10.1116/1.584364

Abstract

View articletitled, Reproducible growth conditions by group III and group V controlled incorporation rate measurements

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Reflection high‐energy electron diffraction studies of principal streak intensity profiles and adatom coverage of (100) GaAs grown by molecular‐beam epitaxy

C. W. Farley; B. G. Streetman

J. Vac. Sci. Technol. B 6, 749–753 (1988) https://doi.org/10.1116/1.584365

Abstract

View articletitled, Reflection high‐energy electron diffraction studies of principal streak intensity profiles and adatom coverage of (100) GaAs grown by molecular‐beam epitaxy

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Mass spectrometry during molecular‐beam epitaxy: An alternative to reflection high‐energy electron diffraction

A. J. SpringThorpe; P. Mandeville

J. Vac. Sci. Technol. B 6, 754–757 (1988) https://doi.org/10.1116/1.584366

Abstract

View articletitled, Mass spectrometry during molecular‐beam epitaxy: An alternative to reflection high‐energy electron diffraction

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Direct determination of Al content in molecular‐beam epitaxially grown Al_xGa_1−xAs (0≤x≤1) by nuclear resonant reaction analysis and x‐ray rocking curve techniques

Fulin Xiong; T. A. Tombrello; H. Z. Chen; H. Morkoç; A. Yariv

J. Vac. Sci. Technol. B 6, 758–762 (1988) https://doi.org/10.1116/1.584367

Abstract

View articletitled, Direct determination of Al content in molecular‐beam epitaxially grown AlxGa1−xAs (0≤x≤1) by nuclear resonant reaction analysis and x‐ray rocking curve techniques

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Monte Carlo simulations of the growth of diamond‐structure semiconductors and surface‐reflected electron‐beam intensities during molecular‐beam epitaxy

A. Rockett

J. Vac. Sci. Technol. B 6, 763–766 (1988) https://doi.org/10.1116/1.584368

Abstract

View articletitled, Monte Carlo simulations of the growth of diamond‐structure semiconductors and surface‐reflected electron‐beam intensities during molecular‐beam epitaxy

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Summary Abstract: Molecular‐beam epitaxy and atomic‐layer epitaxy growth mechanisms for ZnSe(100)

H. H. Farrell; M. C. Tamargo; J. L. de Miguel

J. Vac. Sci. Technol. B 6, 767–768 (1988) https://doi.org/10.1116/1.584369

View articletitled, Summary Abstract: Molecular‐beam epitaxy and atomic‐layer epitaxy growth mechanisms for ZnSe(100)

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Reflection high‐energy electron diffraction observations during growth of ZnS_xSe_1−x(0≤x≤1) by molecular‐beam epitaxy

H. J. Cornelissen; D. A. Cammack; R. J. Dalby

J. Vac. Sci. Technol. B 6, 769–772 (1988) https://doi.org/10.1116/1.584370

Abstract

View articletitled, Reflection high‐energy electron diffraction observations during growth of ZnSxSe1−x(0≤x≤1) by molecular‐beam epitaxy

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Summary Abstract: Valence band discontinuities at the heterojunctions between CdTe, ZnTe, and HgTe in the (100) orientation: X‐ray photoelectron spectroscopy study

C. Hsu; J. P. Faurie

J. Vac. Sci. Technol. B 6, 773–774 (1988) https://doi.org/10.1116/1.584371

View articletitled, Summary Abstract: Valence band discontinuities at the heterojunctions between CdTe, ZnTe, and HgTe in the (100) orientation: X‐ray photoelectron spectroscopy study

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Summary Abstract: Thermodynamic analysis of the molecular‐beam epitaxy of Al_1−xIn_xAs on InP and GaAs (001) substrates

F. Turco; J. Massies; J. C. Guillaume; J. P. Contour

J. Vac. Sci. Technol. B 6, 775–776 (1988) https://doi.org/10.1116/1.584372

View articletitled, Summary Abstract: Thermodynamic analysis of the molecular‐beam epitaxy of Al1−xInxAs on InP and GaAs (001) substrates

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Growth and properties of doped CdTe films grown by photoassisted molecular‐beam epitaxy

S. Hwang; R. L. Harper; K. A. Harris; N. C. Giles; R. N. Bicknell; J. F. Schetzina; D. L. Dreifus; R. M. Kolbas; M. Chu

J. Vac. Sci. Technol. B 6, 777–778 (1988) https://doi.org/10.1116/1.584373

Abstract

View articletitled, Growth and properties of doped CdTe films grown by photoassisted molecular‐beam epitaxy

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Light‐enhanced molecular‐beam epitaxial growth in II–VI and III–V compound semiconductors

H. H. Farrell; R. E. Nahory; J. P. Harbison

J. Vac. Sci. Technol. B 6, 779–781 (1988) https://doi.org/10.1116/1.584374

Abstract

View articletitled, Light‐enhanced molecular‐beam epitaxial growth in II–VI and III–V compound semiconductors

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Summary Abstract: Properties of substitutionally doped CdMnTe films and CdMnTe–CdTe quantum well structures

R. L. Harper; S. Hwang; N. C. Giles; R. N. Bicknell; J. F. Schetzina; E. K. Suh; D. U. Bartholomew; Y. R. Lee; A. K. Ramdas

J. Vac. Sci. Technol. B 6, 782–783 (1988) https://doi.org/10.1116/1.584330

View articletitled, Summary Abstract: Properties of substitutionally doped CdMnTe films and CdMnTe–CdTe quantum well structures

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Structural characterization of GaAs/ZnSe interfaces

M. C. Tamargo; J. L. de Miguel; D. M. Hwang; H. H. Farrell

J. Vac. Sci. Technol. B 6, 784–787 (1988) https://doi.org/10.1116/1.584331

Abstract

View articletitled, Structural characterization of GaAs/ZnSe interfaces

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New achievements in Hg_1−xCd_xTe grown by molecular‐beam epitaxy

S. Sivananthan; M. D. Lange; G. Monfroy; J. P. Faurie

J. Vac. Sci. Technol. B 6, 788–793 (1988) https://doi.org/10.1116/1.584332

Abstract

View articletitled, New achievements in Hg1−xCdxTe grown by molecular‐beam epitaxy

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Reflection high‐energy electron diffraction oscillations during growth of metallic overlayers on ideal and nonideal metallic substrates

S. T. Purcell; A. S. Arrott; B. Heinrich

J. Vac. Sci. Technol. B 6, 794–798 (1988) https://doi.org/10.1116/1.584333

Abstract

View articletitled, Reflection high‐energy electron diffraction oscillations during growth of metallic overlayers on ideal and nonideal metallic substrates

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Molecular‐beam epitaxy and deposition of high‐T_c superconductors

E. S. Hellman; D. G. Schlom; N. Missert; K. Char; J. S. Harris, Jr.; M. R. Beasley; A. Kapitulnik; T. H. Geballe; J. N. Eckstein; S.‐L. Weng; C. Webb

J. Vac. Sci. Technol. B 6, 799–803 (1988) https://doi.org/10.1116/1.584334

Abstract

View articletitled, Molecular‐beam epitaxy and deposition of high‐Tc superconductors

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