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Localized laser chemical processing of tungsten films

W. M. Grossman; M. Karnezos

J. Vac. Sci. Technol. B 5, 843–847 (1987) https://doi.org/10.1116/1.583825

Abstract

View articletitled, Localized laser chemical processing of tungsten films

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Time‐resolved spectroscopic studies of the ultraviolet‐laser photolysis of Al alkyls for film growth

D. Eres; T. Motooka; S. Gorbatkin; D. Lubben; J. E. Greene

J. Vac. Sci. Technol. B 5, 848–852 (1987) https://doi.org/10.1116/1.583678

Abstract

View articletitled, Time‐resolved spectroscopic studies of the ultraviolet‐laser photolysis of Al alkyls for film growth

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Ion species dependence of focused‐ion‐beam lithography

Shinji Matsui; Katsumi Mori; Takao Shiokawa; Koichi Toyoda; Susumu Namba

J. Vac. Sci. Technol. B 5, 853–857 (1987) https://doi.org/10.1116/1.583679

Abstract

View articletitled, Ion species dependence of focused‐ion‐beam lithography

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Subsurface cobalt diffusion in silicon single crystal from infinitesimally small cobalt diffusion source

A. Appelbaum; D. L. Malm; S. P. Murarka

J. Vac. Sci. Technol. B 5, 858–864 (1987) https://doi.org/10.1116/1.583680

Abstract

View articletitled, Subsurface cobalt diffusion in silicon single crystal from infinitesimally small cobalt diffusion source

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Stability of polycrystalline silicon‐on‐cobalt disilicide–silicon structures

S. P. Murarka; C. C. Chang; A. C. Adams

J. Vac. Sci. Technol. B 5, 865–869 (1987) https://doi.org/10.1116/1.583681

Abstract

View articletitled, Stability of polycrystalline silicon‐on‐cobalt disilicide–silicon structures

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Electrical properties of SrF₂/InP (100) diodes and SrF₂ thin films

G. Couturier; A. Chaouki; H. Ricard; A. S. Barriere; C. Haw

J. Vac. Sci. Technol. B 5, 870–875 (1987) https://doi.org/10.1116/1.583682

Abstract

View articletitled, Electrical properties of SrF2/InP (100) diodes and SrF2 thin films

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Reactive ion‐etching‐induced damage in silicon using SF₆ gas mixtures

B. M. Arora; R. Pinto; R. Sachidananda Babu

J. Vac. Sci. Technol. B 5, 876–882 (1987) https://doi.org/10.1116/1.583683

Abstract

View articletitled, Reactive ion‐etching‐induced damage in silicon using SF6 gas mixtures

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Etching of Si by SF₆ in a radio frequency double cathode

R. W. Boswell; A. Bouchoule

J. Vac. Sci. Technol. B 5, 883–888 (1987) https://doi.org/10.1116/1.583684

Abstract

View articletitled, Etching of Si by SF6 in a radio frequency double cathode

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Application of reactive‐ion‐beam etching to recessed‐gate GaAs metal–semiconductor field‐effect transistors

Yuhki Imai; Kuniki Ohwada

J. Vac. Sci. Technol. B 5, 889–893 (1987) https://doi.org/10.1116/1.583685

Abstract

View articletitled, Application of reactive‐ion‐beam etching to recessed‐gate GaAs metal–semiconductor field‐effect transistors

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GaAs and AlGaAs crystallographic etching with low‐pressure chlorine radicals in an ultrahigh‐vacuum system

Sumio Sugata; Kiyoshi Asakawa

J. Vac. Sci. Technol. B 5, 894–901 (1987) https://doi.org/10.1116/1.583686

Abstract

View articletitled, GaAs and AlGaAs crystallographic etching with low‐pressure chlorine radicals in an ultrahigh‐vacuum system

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Secondary ion mass spectrometry study of Pd‐based ohmic contacts to GaAs and AlGaAs/GaAs

C. L. Chen; M. A. Hollis; L. J. Mahoney; W. D. Goodhue; M. J. Manfra; R. A. Murphy

J. Vac. Sci. Technol. B 5, 902–907 (1987) https://doi.org/10.1116/1.583687

Abstract

View articletitled, Secondary ion mass spectrometry study of Pd‐based ohmic contacts to GaAs and AlGaAs/GaAs

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An x‐ray photoelectron spectroscopy and low‐energy electron diffraction controlled surface preparation of Si(100) prior to epitaxial growth of GaAs

J. P. Contour; J. Massies; F. Arnaud d’Avitaya

J. Vac. Sci. Technol. B 5, 908–910 (1987) https://doi.org/10.1116/1.583688

Abstract

View articletitled, An x‐ray photoelectron spectroscopy and low‐energy electron diffraction controlled surface preparation of Si(100) prior to epitaxial growth of GaAs

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Comment on ‘‘Silver diffusion in Ag₂Se/GeSe₂ inorganic resist system’’

A. Thomas; G. Kluge; P. Süptitz

J. Vac. Sci. Technol. B 5, 910–911 (1987) https://doi.org/10.1116/1.583689

View articletitled, Comment on ‘‘Silver diffusion in Ag2Se/GeSe2 inorganic resist system’’

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Reply to ‘‘Comment on ‘Silver diffusion in Ag₂Se/GeSe₂ inorganic resist’ ’’

K. J. Polasko; C. C. Tsai; M. R. Cagan; R. F. W. Pease

J. Vac. Sci. Technol. B 5, 911–912 (1987) https://doi.org/10.1116/1.583690

View articletitled, Reply to ‘‘Comment on ‘Silver diffusion in Ag2Se/GeSe2 inorganic resist’ ’’

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Tunneling spectroscopy of the GaAs(110) surface

R. M. Feenstra; Joseph A. Stroscio

J. Vac. Sci. Technol. B 5, 923–929 (1987) https://doi.org/10.1116/1.583691

Abstract

View articletitled, Tunneling spectroscopy of the GaAs(110) surface

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Inverse photoemission from surface and interface states of III–V semiconductors

W. Drube; F. J. Himpsel; R. Ludeke

J. Vac. Sci. Technol. B 5, 930–932 (1987) https://doi.org/10.1116/1.583692

Abstract

View articletitled, Inverse photoemission from surface and interface states of III–V semiconductors

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Theoretical studies of reconstructed GaAs(100) surfaces using first principle calculations

Guo‐Xin Qian; Richard M. Martin; D. J. Chadi

J. Vac. Sci. Technol. B 5, 933–938 (1987) https://doi.org/10.1116/1.583693

Abstract

View articletitled, Theoretical studies of reconstructed GaAs(100) surfaces using first principle calculations

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Steps on (001) silicon surfaces

D. E. Aspnes; J. Ihm

J. Vac. Sci. Technol. B 5, 939–944 (1987) https://doi.org/10.1116/1.583694

Abstract

View articletitled, Steps on (001) silicon surfaces

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Self‐consistent electronic structure of semi‐infinite Si(001) (2×1) and Ge(001) (2×1) with model calculations for scanning tunneling microscopy

J. Pollmann; P. Krüger; A. Mazur

J. Vac. Sci. Technol. B 5, 945–952 (1987) https://doi.org/10.1116/1.583695

Abstract

View articletitled, Self‐consistent electronic structure of semi‐infinite Si(001) (2×1) and Ge(001) (2×1) with model calculations for scanning tunneling microscopy

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Dependence on ionicity of the (110) surface relaxations of zinc‐blende semiconductors

R. V. Kasowski; M.‐H. Tsai; John D. Dow

J. Vac. Sci. Technol. B 5, 953–955 (1987) https://doi.org/10.1116/1.583696

Abstract

View articletitled, Dependence on ionicity of the (110) surface relaxations of zinc‐blende semiconductors

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The interface and its role in surface‐parallel transport

D. K. Ferry

J. Vac. Sci. Technol. B 5, 956–959 (1987) https://doi.org/10.1116/1.583697

Abstract

View articletitled, The interface and its role in surface‐parallel transport

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Mobility anisotropy and magnetoresistance at an (InAs)₁(GaAs)₁–InP heterointerface grown on a (001) vicinal InP substrate

Syoji Yamada; Takashi Fukui; Hisao Saito

J. Vac. Sci. Technol. B 5, 960–963 (1987) https://doi.org/10.1116/1.583698

Abstract

View articletitled, Mobility anisotropy and magnetoresistance at an (InAs)1(GaAs)1–InP heterointerface grown on a (001) vicinal InP substrate

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Negative differential conductivity in lateral surface superlattices

G. Bernstein; D. K. Ferry

J. Vac. Sci. Technol. B 5, 964–966 (1987) https://doi.org/10.1116/1.583699

Abstract

View articletitled, Negative differential conductivity in lateral surface superlattices

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Hysteresis predicted in I–V curve of heterojunction resonant tunneling diodes simulated by a self‐consistent quantum method

H. L. Berkowitz; R. A. Lux

J. Vac. Sci. Technol. B 5, 967–970 (1987) https://doi.org/10.1116/1.583700

Abstract

View articletitled, Hysteresis predicted in I–V curve of heterojunction resonant tunneling diodes simulated by a self‐consistent quantum method

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Electrical properties and applications of In_xAl_1−xAs/InP

C. M. Hanson; H. H. Wieder

J. Vac. Sci. Technol. B 5, 971–975 (1987) https://doi.org/10.1116/1.583827

Abstract

View articletitled, Electrical properties and applications of InxAl1−xAs/InP

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Two‐dimensional electron transport in InP surface layers

G. R. Bailey; R. E. Owens; C. W. Wilmsen; S. M. Goodnick

J. Vac. Sci. Technol. B 5, 976–979 (1987) https://doi.org/10.1116/1.583828

Abstract

View articletitled, Two‐dimensional electron transport in InP surface layers

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Summary Abstract: Low‐temperature electrical transport studies of the two‐dimensional electron gas at p‐InSb interfaces

T. W. Kim; Y. H. Chang; Y. D. Zheng; A. A Reeder; B. D. McCombe; R. F. C. Farrow; T. Temofonte; F. A. Shirland; A. Noreika

J. Vac. Sci. Technol. B 5, 980–981 (1987) https://doi.org/10.1116/1.583829

View articletitled, Summary Abstract: Low‐temperature electrical transport studies of the two‐dimensional electron gas at p‐InSb interfaces

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Reduced reverse bias current in Al–GaAs and In_0.75Ga_0.25As–GaAs junctions containing an interfacial arsenic layer

D. V. Rossi; E. R. Fossum; G. D. Pettit; P. D. Kirchner; J. M. Woodall

J. Vac. Sci. Technol. B 5, 982–984 (1987) https://doi.org/10.1116/1.583830

Abstract

View articletitled, Reduced reverse bias current in Al–GaAs and In0.75Ga0.25As–GaAs junctions containing an interfacial arsenic layer

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Summary Abstract: Electron spin resonance studies of electron transport across the metal–silicon interface

D. C. Vier; S. Schultz; M. G. Wu; M. B. Maple

J. Vac. Sci. Technol. B 5, 985–986 (1987) https://doi.org/10.1116/1.583831

View articletitled, Summary Abstract: Electron spin resonance studies of electron transport across the metal–silicon interface

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Initial stages of Schottky barrier formation: Temperature effects

K. Stiles; A. Kahn; D. G. Kilday; G. Margaritondo

J. Vac. Sci. Technol. B 5, 987–991 (1987) https://doi.org/10.1116/1.583833

Abstract

View articletitled, Initial stages of Schottky barrier formation: Temperature effects

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Auger electron spectroscopy and low‐energy electron diffraction investigation of the InSb(110)+Ag system at 10–300 K with θ=0–20 monolayers

V. Yu. Aristov; I. L. Bolotin; V. A. Grazhulis

J. Vac. Sci. Technol. B 5, 992–997 (1987) https://doi.org/10.1116/1.583834

Abstract

View articletitled, Auger electron spectroscopy and low‐energy electron diffraction investigation of the InSb(110)+Ag system at 10–300 K with θ=0–20 monolayers

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Kinetics study of initial stage band bending at metal GaAs(110) interfaces

Renyu Cao; Ken Miyano; Tom Kendelewicz; Ken K. Chin; Ingolf Lindau; William E. Spicer

J. Vac. Sci. Technol. B 5, 998–1002 (1987) https://doi.org/10.1116/1.583835

Abstract

View articletitled, Kinetics study of initial stage band bending at metal GaAs(110) interfaces

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Cr/InSb(110): A study of interface development with high‐resolution core‐level photoemission

F. Boscherini; Yoram Shapira; C. Capasso; C. M. Aldao; J. H. Weaver

J. Vac. Sci. Technol. B 5, 1003–1006 (1987) https://doi.org/10.1116/1.583763

Abstract

View articletitled, Cr/InSb(110): A study of interface development with high‐resolution core‐level photoemission

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The structure and electrical properties of metal contacts on GaAs

Zuzanna Liliental‐Weber

J. Vac. Sci. Technol. B 5, 1007–1014 (1987) https://doi.org/10.1116/1.583764

Abstract

View articletitled, The structure and electrical properties of metal contacts on GaAs

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Variation of n‐GaAs (100) interface Fermi level by Ge and Si overlayers

R. W. Grant; J. R. Waldrop

J. Vac. Sci. Technol. B 5, 1015–1019 (1987) https://doi.org/10.1116/1.583765

Abstract

View articletitled, Variation of n‐GaAs (100) interface Fermi level by Ge and Si overlayers

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Mechanism for annealing‐induced changes in the electrical characteristics of Al/GaAs and Al/InP Schottky contacts

N. Newman; W. E. Spicer; E. R. Weber

J. Vac. Sci. Technol. B 5, 1020–1029 (1987) https://doi.org/10.1116/1.583766

Abstract

View articletitled, Mechanism for annealing‐induced changes in the electrical characteristics of Al/GaAs and Al/InP Schottky contacts

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Structure and lateral diffusion of ohmic contacts in AlGaAs/GaAs high electron mobility transistors and GaAs devices

Dietrich W. Langer; A. Ezis; A. K. Rai

J. Vac. Sci. Technol. B 5, 1030–1032 (1987) https://doi.org/10.1116/1.583767

Abstract

View articletitled, Structure and lateral diffusion of ohmic contacts in AlGaAs/GaAs high electron mobility transistors and GaAs devices

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Chemical reaction and Schottky barrier formation at the Ti/InP(110) and Sn/InP(110) interfaces: Reactive versus nonreactive cases

Tom Kendelewicz; P. H. Mahowald; C. E. McCants; K. A. Bartness; I. Lindau; W. E. Spicer

J. Vac. Sci. Technol. B 5, 1033–1038 (1987) https://doi.org/10.1116/1.583723

Abstract

View articletitled, Chemical reaction and Schottky barrier formation at the Ti/InP(110) and Sn/InP(110) interfaces: Reactive versus nonreactive cases

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Reactive interface formation—Pt/Si〈111〉: Nucleation and morphology

R. J. Nemanich; C. M. Doland; F. A. Ponce

J. Vac. Sci. Technol. B 5, 1039–1043 (1987) https://doi.org/10.1116/1.583724

Abstract

View articletitled, Reactive interface formation—Pt/Si〈111〉: Nucleation and morphology

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The InP(110)/Sb interface: Ohmic behavior at large Sb coverages

N. Esser; H. Münder; M. Hünermann; W. Pletschen; W. Richter; D. R. T. Zahn

J. Vac. Sci. Technol. B 5, 1044–1047 (1987) https://doi.org/10.1116/1.583725

Abstract

View articletitled, The InP(110)/Sb interface: Ohmic behavior at large Sb coverages

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The role of order on the interface properties of Sb/GaAs(110)

F. Schäffler; R. Ludeke; A. Taleb‐Ibrahimi; G. Hughes; D. Rieger

J. Vac. Sci. Technol. B 5, 1048–1053 (1987) https://doi.org/10.1116/1.583726

Abstract

View articletitled, The role of order on the interface properties of Sb/GaAs(110)

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The Schottky barrier at the InSb(110)–Sn interface

A. Förster; A. Tulke; H. Lüth

J. Vac. Sci. Technol. B 5, 1054–1056 (1987) https://doi.org/10.1116/1.583727

Abstract

View articletitled, The Schottky barrier at the InSb(110)–Sn interface

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InSb growth on Sb(111) single crystals studied by angle‐resolved photoemission

R. Sporken; P. Louette; R. Caudano; J. Barth; J. Ghijsen; R. L. Johnson; H. W. Richter

J. Vac. Sci. Technol. B 5, 1057–1061 (1987) https://doi.org/10.1116/1.583728

Abstract

View articletitled, InSb growth on Sb(111) single crystals studied by angle‐resolved photoemission

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Mechanism of Schottky barrier formation: The role of amphoteric native defects

W. Walukiewicz

J. Vac. Sci. Technol. B 5, 1062–1067 (1987) https://doi.org/10.1116/1.583729

Abstract

View articletitled, Mechanism of Schottky barrier formation: The role of amphoteric native defects

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Chemical and electronic properties of the Pt/GaAs(110) interface

C. E. McCants; Tom Kendelewicz; K. A. Bertness; P. H. Mahowald; M. D. Williams; R. S. List; I. Lindau; William E. Spicer

J. Vac. Sci. Technol. B 5, 1068–1074 (1987) https://doi.org/10.1116/1.583730

Abstract

View articletitled, Chemical and electronic properties of the Pt/GaAs(110) interface

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Unpinned Schottky barrier formation at metal–GaP interfaces: A representative III–V compound interface

P. Chiaradia; L. J. Brillson; M. Slade; R. E. Viturro; D. Kilday; N. Tache; M. Kelly; G. Margaritondo

J. Vac. Sci. Technol. B 5, 1075–1079 (1987) https://doi.org/10.1116/1.583731

Abstract

View articletitled, Unpinned Schottky barrier formation at metal–GaP interfaces: A representative III–V compound interface

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Summary Abstract: Chemical reaction at the In on GaAs (110) interface: A synchrotron radiation photoemission study

K. K. Chin; K. Miyano; R. Cao; Tom Kendelewicz; J. Yeh; I. Lindau; William E. Spicer

J. Vac. Sci. Technol. B 5, 1080–1082 (1987) https://doi.org/10.1116/1.583732

View articletitled, Summary Abstract: Chemical reaction at the In on GaAs (110) interface: A synchrotron radiation photoemission study

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A photoemission study of the Si(111)/Gd interface: A comparison with the bulk silicides

E. Puppin; J. Nogami; C. Carbone; Z. X. Shen; I. Lindau; B. B. Pate; I. Abbati; L. Braicovich

J. Vac. Sci. Technol. B 5, 1083–1086 (1987) https://doi.org/10.1116/1.583733

Abstract

View articletitled, A photoemission study of the Si(111)/Gd interface: A comparison with the bulk silicides

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Wavelength dependence of optically induced oxidation of GaAs(100)

C. F. Yu; M. T. Schmidt; D. V. Podlesnik; R. M. Osgood, Jr.

J. Vac. Sci. Technol. B 5, 1087–1091 (1987) https://doi.org/10.1116/1.583734

Abstract

View articletitled, Wavelength dependence of optically induced oxidation of GaAs(100)

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Thermal stability of the anodic oxide/Hg₁_−xCd_xTe interface

C. M. Stahle; C. R. Helms; A. Simmons

J. Vac. Sci. Technol. B 5, 1092–1096 (1987) https://doi.org/10.1116/1.583735

Abstract

View articletitled, Thermal stability of the anodic oxide/Hg1−xCdxTe interface

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Electronic and microstructural properties of disorder‐induced gap states at compound semiconductor–insulator interfaces

Hideki Hasegawa; Li He; Hideo Ohno; Takayuki Sawada; Tetsuya Haga; Yutaka Abe; Heishichirou Takahashi

J. Vac. Sci. Technol. B 5, 1097–1107 (1987) https://doi.org/10.1116/1.583736

Abstract

View articletitled, Electronic and microstructural properties of disorder‐induced gap states at compound semiconductor–insulator interfaces

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On the chemistry of passivated oxide–InP interfaces

G. Hollinger; J. Joseph; Y. Robach; E. Bergignat; B. Commère; P. Viktorovitch; M. Froment

J. Vac. Sci. Technol. B 5, 1108–1112 (1987) https://doi.org/10.1116/1.583737

Abstract

View articletitled, On the chemistry of passivated oxide–InP interfaces

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High‐resolution electron‐energy‐loss spectroscopy studies of GaAs (100) surfaces

D. J. Frankel; C. Yu; J. P. Harbison; H. H. Farrell

J. Vac. Sci. Technol. B 5, 1113–1118 (1987) https://doi.org/10.1116/1.583738

Abstract

View articletitled, High‐resolution electron‐energy‐loss spectroscopy studies of GaAs (100) surfaces

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Pinning of the Fermi level close to the valence‐band top by chlorine adsorbed on cleaved GaAs(110) surfaces

D. Troost; L. Koenders; L.‐Y. Fan; W. Mönch

J. Vac. Sci. Technol. B 5, 1119–1124 (1987) https://doi.org/10.1116/1.583739

Abstract

View articletitled, Pinning of the Fermi level close to the valence‐band top by chlorine adsorbed on cleaved GaAs(110) surfaces

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Cleavage‐related electronic states of Al–InP(110) interfaces

R. E. Viturro; J. L. Shaw; L. J. Brillson

J. Vac. Sci. Technol. B 5, 1125–1128 (1987) https://doi.org/10.1116/1.583740

Abstract

View articletitled, Cleavage‐related electronic states of Al–InP(110) interfaces

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Cleaning and nitridation of GaAs surfaces in multipolar plasmas investigated by in situ photoemission and spectroscopic ellipsometry

P. Friedel; J.‐P. Landesman; P. Boher; J. Schneider

J. Vac. Sci. Technol. B 5, 1129–1134 (1987) https://doi.org/10.1116/1.583741

Abstract

View articletitled, Cleaning and nitridation of GaAs surfaces in multipolar plasmas investigated by in situ photoemission and spectroscopic ellipsometry

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Surface structure and interface formation of Si on GaAs(100)

R. Z. Bachrach; R. D. Bringans; M. A. Olmstead; R. I. G. Uhrberg

J. Vac. Sci. Technol. B 5, 1135–1140 (1987) https://doi.org/10.1116/1.583742

Abstract

View articletitled, Surface structure and interface formation of Si on GaAs(100)

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Laser probing of gallium atom interactions with silicon(100) surfaces

Karen L. Carleton; Stephen R. Leone

J. Vac. Sci. Technol. B 5, 1141–1146 (1987) https://doi.org/10.1116/1.583743

Abstract

View articletitled, Laser probing of gallium atom interactions with silicon(100) surfaces

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Summary Abstract: Structural analysis of ultrathin epitaxial Ge/Si films on Si(100)

J. Bevk; B. A. Davidson; L. C. Feldman; H‐J. Gossmann; J. P. Mannaerts; S. Nakahara; A. Ourmazd

J. Vac. Sci. Technol. B 5, 1147–1149 (1987) https://doi.org/10.1116/1.583744

View articletitled, Summary Abstract: Structural analysis of ultrathin epitaxial Ge/Si films on Si(100)

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Sublattice allocation and antiphase domain suppression in polar‐on‐nonpolar nucleation

Herbert Kroemer

J. Vac. Sci. Technol. B 5, 1150–1154 (1987) https://doi.org/10.1116/1.583702

Abstract

View articletitled, Sublattice allocation and antiphase domain suppression in polar‐on‐nonpolar nucleation

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Summary Abstract: Atomic structure of semiconductor interfaces

A. Ourmazd; W. T. Tsang; J. A. Rentschler; D. W. Taylor

J. Vac. Sci. Technol. B 5, 1155 (1987) https://doi.org/10.1116/1.583701

View articletitled, Summary Abstract: Atomic structure of semiconductor interfaces

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Control of dislocations in GaAs grown on Si(211) by molecular beam epitaxy

J. S. Ahearn; P. Uppal; T. K. Liu; H. Kroemer

J. Vac. Sci. Technol. B 5, 1156–1161 (1987) https://doi.org/10.1116/1.583703

Abstract

View articletitled, Control of dislocations in GaAs grown on Si(211) by molecular beam epitaxy

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A study of strain‐related effects in the molecular‐beam epitaxy growth of In_xGa_1−xAs on GaAs using reflection high‐energy electron diffraction

Paul R. Berger; Kevin Chang; Pallab K. Bhattacharya; Jasprit Singh

J. Vac. Sci. Technol. B 5, 1162–1166 (1987) https://doi.org/10.1116/1.583704

Abstract

View articletitled, A study of strain‐related effects in the molecular‐beam epitaxy growth of InxGa1−xAs on GaAs using reflection high‐energy electron diffraction

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Formation of misfit and threading dislocations in molecular‐beam epitaxy grown strained layer epitaxy: Role of growth modes

Jasprit Singh; K. K. Bajaj; S. Dudley

J. Vac. Sci. Technol. B 5, 1167–1170 (1987) https://doi.org/10.1116/1.583705

Abstract

View articletitled, Formation of misfit and threading dislocations in molecular‐beam epitaxy grown strained layer epitaxy: Role of growth modes

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Evaluation of interface defects and the effect of iodine impurity in low‐resistivity metal‐organic chemical vapor deposition‐grown ZnS films on GaAs

Yoichi Kawakami; Tsunemasa Taguchi; Akio Hiraki

J. Vac. Sci. Technol. B 5, 1171–1178 (1987) https://doi.org/10.1116/1.583706

Abstract

View articletitled, Evaluation of interface defects and the effect of iodine impurity in low‐resistivity metal‐organic chemical vapor deposition‐grown ZnS films on GaAs

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Atomistic numerical simulation of epitaxial crystal growth

S. Das Sarma; S. M. Paik; K. E. Khor; A. Kobayashi

J. Vac. Sci. Technol. B 5, 1179–1183 (1987) https://doi.org/10.1116/1.583707

Abstract

View articletitled, Atomistic numerical simulation of epitaxial crystal growth

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Kinetic processes in atomic‐layer epitaxy of GaAs and AlAs using a pulsed vapor‐phase method

M. Ozeki; K. Mochizuki; N. Ohtsuka; K. Kodama

J. Vac. Sci. Technol. B 5, 1184–1186 (1987) https://doi.org/10.1116/1.583708

Abstract

View articletitled, Kinetic processes in atomic‐layer epitaxy of GaAs and AlAs using a pulsed vapor‐phase method

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Interdiffusion of Al and Ga in (Al,Ga)As/GaAs superlattices

Jyh‐Chwen Lee; T. E. Schlesinger; T. F. Kuech

J. Vac. Sci. Technol. B 5, 1187–1190 (1987) https://doi.org/10.1116/1.583709

Abstract

View articletitled, Interdiffusion of Al and Ga in (Al,Ga)As/GaAs superlattices

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Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces

D. Bimberg; J. Christen; T. Fukunaga; H. Nakashima; D. E. Mars; J. N. Miller

J. Vac. Sci. Technol. B 5, 1191–1197 (1987) https://doi.org/10.1116/1.583710

Abstract

View articletitled, Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces

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Electronic structure of GaAs–Ga_1−xAl_xAs quantum wires

K. B. Wong; M. Jaros; J. P. Hagon

J. Vac. Sci. Technol. B 5, 1198–1203 (1987) https://doi.org/10.1116/1.583711

Abstract

View articletitled, Electronic structure of GaAs–Ga1−xAlxAs quantum wires

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Interface structure and optical properties of quantum wells and quantum boxes

P. M. Petroff; J. Cibert; A. C. Gossard; G. J. Dolan; C. W. Tu

J. Vac. Sci. Technol. B 5, 1204–1208 (1987) https://doi.org/10.1116/1.583712

Abstract

View articletitled, Interface structure and optical properties of quantum wells and quantum boxes

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Effect of growth sequence on the band discontinuities at AlAs/GaAs (100) and (110) heterojunction interfaces

J. R. Waldrop; R. W. Grant; E. A. Kraut

J. Vac. Sci. Technol. B 5, 1209–1214 (1987) https://doi.org/10.1116/1.583713

Abstract

View articletitled, Effect of growth sequence on the band discontinuities at AlAs/GaAs (100) and (110) heterojunction interfaces

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Measurement of heterojunction band offsets in InP/Ga_0.47In_0.53As by admittance spectroscopy

D. V. Lang; M. B. Panish; F. Capasso; J. Allam; R. A. Hamm; A. M. Sergent; W. T. Tsang

J. Vac. Sci. Technol. B 5, 1215–1220 (1987) https://doi.org/10.1116/1.583714

Abstract

View articletitled, Measurement of heterojunction band offsets in InP/Ga0.47In0.53As by admittance spectroscopy

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‘‘Pinning’’ of energy levels of transition‐metal impurities

J. Tersoff; Walter A. Harrison

J. Vac. Sci. Technol. B 5, 1221–1224 (1987) https://doi.org/10.1116/1.583715

Abstract

View articletitled, ‘‘Pinning’’ of energy levels of transition‐metal impurities

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Band offsets at interfaces between HgTe, CdTe, and InSb

Chris G. Van de Walle; Richard M. Martin

J. Vac. Sci. Technol. B 5, 1225–1228 (1987) https://doi.org/10.1116/1.583716

Abstract

View articletitled, Band offsets at interfaces between HgTe, CdTe, and InSb

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Summary Abstract: Valence band discontinuity in Te‐based II–VI heterojunctions HgTe, CdTe, and ZnTe

C. Hsu; Tran Minh Duc; J. P. Faurie

J. Vac. Sci. Technol. B 5, 1229–1230 (1987) https://doi.org/10.1116/1.583717

View articletitled, Summary Abstract: Valence band discontinuity in Te‐based II–VI heterojunctions HgTe, CdTe, and ZnTe

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Summary Abstract: Natural valence‐band offset of HgTe and CdTe

C. K. Shih; W. E. Spicer

J. Vac. Sci. Technol. B 5, 1231–1232 (1987) https://doi.org/10.1116/1.583718

View articletitled, Summary Abstract: Natural valence‐band offset of HgTe and CdTe

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InSb–CdTe interfaces: A combined study by soft x‐ray photoemission, low‐energy electron diffraction, and Raman spectroscopy

K. J. Mackey; D. R. T. Zahn; P. M. G. Allen; R. H. Williams; W. Richter; R. S. Williams

J. Vac. Sci. Technol. B 5, 1233–1238 (1987) https://doi.org/10.1116/1.583719

Abstract

View articletitled, InSb–CdTe interfaces: A combined study by soft x‐ray photoemission, low‐energy electron diffraction, and Raman spectroscopy

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Calculation of the valence band offsets of common‐anion semiconductor heterojunctions from core levels: The role of cation d orbitals

Su‐Huai Wei; Alex Zunger

J. Vac. Sci. Technol. B 5, 1239–1245 (1987) https://doi.org/10.1116/1.583720

Abstract

View articletitled, Calculation of the valence band offsets of common‐anion semiconductor heterojunctions from core levels: The role of cation d orbitals

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Heterojunction band offsets and scaling

E. A. Kraut

J. Vac. Sci. Technol. B 5, 1246–1249 (1987) https://doi.org/10.1116/1.583721

Abstract

View articletitled, Heterojunction band offsets and scaling

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Core electron binding energy shifts and screening in tetrahedral semiconductors

John E. Klepeis; Walter A. Harrison

J. Vac. Sci. Technol. B 5, 1250–1255 (1987) https://doi.org/10.1116/1.583722

Abstract

View articletitled, Core electron binding energy shifts and screening in tetrahedral semiconductors

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Summary Abstract: Light scattering determination of band offsets in GaAs–In_xGa_1−xAs quantum wells

J. Menéndez; A. Pinczuk; D. J. Werder; A. Y. Cho; D. L. Sivco

J. Vac. Sci. Technol. B 5, 1256–1257 (1987) https://doi.org/10.1116/1.583814

View articletitled, Summary Abstract: Light scattering determination of band offsets in GaAs–InxGa1−xAs quantum wells

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Valence‐band discontinuity at the Ge/InP(110) interface

P. H. Mahowald; Tom Kendelewicz; K. A. Bertness; C. E. McCants; M. D. Williams; William E. Spicer

J. Vac. Sci. Technol. B 5, 1258–1262 (1987) https://doi.org/10.1116/1.583815

Abstract

View articletitled, Valence‐band discontinuity at the Ge/InP(110) interface

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Structure of CdTe/ZnTe superlattices

R. H. Miles; T. C. McGill; S. Sivananthan; X. Chu; J. P. Faurie

J. Vac. Sci. Technol. B 5, 1263–1267 (1987) https://doi.org/10.1116/1.583816

Abstract

View articletitled, Structure of CdTe/ZnTe superlattices

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Electronic structure of (001) and (111) growth axis InAs–Ga_1−xIn_xSb strained‐layer superlattices

C. Mailhiot; D. L. Smith

J. Vac. Sci. Technol. B 5, 1268–1273 (1987) https://doi.org/10.1116/1.583817

Abstract

View articletitled, Electronic structure of (001) and (111) growth axis InAs–Ga1−xInxSb strained‐layer superlattices

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New optical transitions in Ge–Si ordered atomic‐layer structures

T. P. Pearsall; J. Bevk; L. C. Feldman; J. M. Bonar; J. P. Mannaerts; A. Ourmazd

J. Vac. Sci. Technol. B 5, 1274–1278 (1987) https://doi.org/10.1116/1.583818

Abstract

View articletitled, New optical transitions in Ge–Si ordered atomic‐layer structures

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The Si/GaAs (110) heterojunction: Strain, disorder, and valence‐band discontinuity

R. S. List; J. C. Woicik; I. Lindau; W. E. Spicer

J. Vac. Sci. Technol. B 5, 1279–1283 (1987) https://doi.org/10.1116/1.583819

Abstract

View articletitled, The Si/GaAs (110) heterojunction: Strain, disorder, and valence‐band discontinuity

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Summary Abstract: Valence‐band discontinuities in (100) GaSb/AlSb and GaSb/InAs heterojunctions

G. J. Gualtieri; R. G. Nuzzo; R. J. Malik; J. F. Walker; L. C. Feldman; W. A. Sunder; G. P. Schwartz

J. Vac. Sci. Technol. B 5, 1284–1285 (1987) https://doi.org/10.1116/1.583820

View articletitled, Summary Abstract: Valence‐band discontinuities in (100) GaSb/AlSb and GaSb/InAs heterojunctions

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Summary Abstract: A nondestructive synchrotron radiation photoemission study of the band lineup for buried GaSb–AlSb interfaces

D. W. Niles; B. Lai; J. T. McKinley; G. Margaritondo; G. Wells; F. Cerrina; G. J. Gualtieri; G. P. Schwartz

J. Vac. Sci. Technol. B 5, 1286–1287 (1987) https://doi.org/10.1116/1.583821

View articletitled, Summary Abstract: A nondestructive synchrotron radiation photoemission study of the band lineup for buried GaSb–AlSb interfaces

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Self‐consistent solutions of electronic wave functions at GaAs–Al_xGa_1−xAs interfaces

Y. Rajakarunanayake; T. C. McGill

J. Vac. Sci. Technol. B 5, 1288–1294 (1987) https://doi.org/10.1116/1.583822

Abstract

View articletitled, Self‐consistent solutions of electronic wave functions at GaAs–AlxGa1−xAs interfaces

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Theory of electroabsorption in asymmetric‐graded‐gap quantum wells

G. D. Sanders; K. K. Bajaj

J. Vac. Sci. Technol. B 5, 1295–1299 (1987) https://doi.org/10.1116/1.583823

Abstract

View articletitled, Theory of electroabsorption in asymmetric‐graded‐gap quantum wells

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Confined states and stability of GaAs–AlAs superlattices

Inder P. Batra; S. Ciraci; J. S. Nelson

J. Vac. Sci. Technol. B 5, 1300–1304 (1987) https://doi.org/10.1116/1.583824

Abstract

View articletitled, Confined states and stability of GaAs–AlAs superlattices

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