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Nanocalorimetry for plasma metrology relevant to semiconductor fabrication
Rate-controlled cycle etching of GaN by cycle exposure to BCl3 and F2-added Ar plasma at a substrate temperature of 400 °C
Extended model for chemically amplified resist with multiple photoacid generators
Focused helium ion beam nanofabrication by near-surface swelling
Effect of low-pressure postannealing on the electrical properties of VO2 thin films
Analysis of the adhesion structure between the cycloolefin polymer and the copper seed layer formed using medium-vacuum sputtering
Issues
Letters
Nanocalorimetry for plasma metrology relevant to semiconductor fabrication
In Special Collection:
CHIPS: Future of Semiconductor Processing and Devices
J. Trey Diulus; Carles Corbella; Feng Yi; David LaVan; Berc Kalanyan; Mark McLean; Lakshmi Ravi Narayan; William A. Osborn; James E. Maslar; Andrei Kolmakov
J. Vac. Sci. Technol. B 43, 020601 (2025)
https://doi.org/10.1116/6.0004294
ARTICLES
Electronic and Optoelectronic Materials, Devices and Processing
Selective metal-carbides hardmask strip with chlorine and oxygen plasma
J. Vac. Sci. Technol. B 43, 022201 (2025)
https://doi.org/10.1116/6.0003984
Rate-controlled cycle etching of GaN by cycle exposure to BCl3 and F2-added Ar plasma at a substrate temperature of 400 °C
J. Vac. Sci. Technol. B 43, 022202 (2025)
https://doi.org/10.1116/5.0239755
Photoluminescence lifetime of perovskites on modified substrates
Xavier Vorhies; Jessica M. Andriolo; Joseph J. Thiebes; Emma K. Orcutt; Erik M. Grumstrup; Jack L. Skinner
J. Vac. Sci. Technol. B 43, 022203 (2025)
https://doi.org/10.1116/6.0004115
Carbon impurities in oxide thin films: The effect of annealing and laser irradiation
J. Vac. Sci. Technol. B 43, 022204 (2025)
https://doi.org/10.1116/6.0004193
Exploring SiC CVD growth parameters compatible with remote epitaxy
In Special Collection:
CHIPS: Future of Semiconductor Processing and Devices
J. Vac. Sci. Technol. B 43, 022205 (2025)
https://doi.org/10.1116/6.0004106
Viability of HFO-1234ze(E) (trans-1,3,3,3-tetrafluoropropene) as a low global warming potential silicon dioxide etch gas
Aaron J. Windsor; Jeremy C. Clark; George McMurdy; Eric A. Joseph; Robert G. Syvret; Ronald J. Olson, Jr.; Judy J. Cha
J. Vac. Sci. Technol. B 43, 022206 (2025)
https://doi.org/10.1116/6.0004194
Ferroelectricity in amorphous aluminum oxynitride films synthesized by inductively coupled plasma assisted atomic layer deposition
Dominic A. Dalba; Somayeh Saadat Niavol; Xiaoman Zhang; Wangwang Xu; Bipin Bhattarai; Indeewari M. Karunarathne; Dilan M. Gamachchi; Dongmei Cao; W. J. Meng; Andrew C. Meng
J. Vac. Sci. Technol. B 43, 022207 (2025)
https://doi.org/10.1116/6.0004218
Resistive switching characteristics of TiO2 films prepared by DC magnetron sputtering: Effects of nitrogen composition and phase structure
Youzhuang Rong; Yongkang Yang; Mingjie Lv; Yao Liu; Changmin Wang; Dawei Cui; Yunyan Liu; Chang-Feng Yu; Gongxiang Wei
J. Vac. Sci. Technol. B 43, 022208 (2025)
https://doi.org/10.1116/6.0004216
Suppressing oxygen vacancy formation in ZrO2 to improve electrical properties by employing MoO2 bottom electrode
J. Vac. Sci. Technol. B 43, 022209 (2025)
https://doi.org/10.1116/6.0004351
Optimized thermoelectric performance of porous Bi0.5Sb1.5Te3 thin films through rapid thermal processing
J. Vac. Sci. Technol. B 43, 022210 (2025)
https://doi.org/10.1116/6.0004322
Focusing electrode effect on the EUV lighting technology based on C-beam irradiation technique
J. Vac. Sci. Technol. B 43, 022211 (2025)
https://doi.org/10.1116/6.0004301
Experimental current-voltage-temperature and thermal sensitivity behaviors of an ideal Schottky barrier diode over a wide temperature range
J. Vac. Sci. Technol. B 43, 022212 (2025)
https://doi.org/10.1116/6.0004273
Does the blue luminescence of Eu-doped β-NaYF4 originate from Eu2+ ions?
In Special Collection:
Celebrating the Achievements and Life of Paul H. Holloway
J. Vac. Sci. Technol. B 43, 022213 (2025)
https://doi.org/10.1116/6.0004282
Resistive switching effect of HfO2/Nb:SrTiO3 under the influence of nanodefects and varying atmospheric conditions
J. Vac. Sci. Technol. B 43, 022214 (2025)
https://doi.org/10.1116/6.0004231
TiN and TaN cointegration for 300 mm superconducting back end of line
In Special Collection:
Papers from the AVS 70th International Symposium
J. Vac. Sci. Technol. B 43, 022216 (2025)
https://doi.org/10.1116/6.0004316
Energy Conversion and Storage Devices
Thermal evaporation of thin Li films
J. Vac. Sci. Technol. B 43, 022401 (2025)
https://doi.org/10.1116/6.0004174
Lithography
Fabrication of microstructures on porous nanolattices
J. Vac. Sci. Technol. B 43, 022601 (2025)
https://doi.org/10.1116/6.0004054
Fluorescent flow analysis of in situ material exchange in two-photon 3D printing
J. Vac. Sci. Technol. B 43, 022602 (2025)
https://doi.org/10.1116/6.0004114
Extended model for chemically amplified resist with multiple photoacid generators
J. Vac. Sci. Technol. B 43, 022603 (2025)
https://doi.org/10.1116/6.0004381
Nanoscale Science and Technology
Influence of O content on exothermic and self-propagating characteristics of Ti/SiOx multilayer films
In Special Collection:
Papers from the International Symposium on Sputtering and Plasma Processes 2024.
J. Vac. Sci. Technol. B 43, 022801 (2025)
https://doi.org/10.1116/6.0004192
Surface treatment of carbon fiber reinforced polymer for adhesive bonding with pioneer epoxy using atmospheric pressure plasma jet
J. Vac. Sci. Technol. B 43, 022802 (2025)
https://doi.org/10.1116/6.0004081
Focused helium ion beam nanofabrication by near-surface swelling
J. Vac. Sci. Technol. B 43, 022803 (2025)
https://doi.org/10.1116/6.0004100
Method based on golden section search for reconstruction of nano layer structure directly from depth profiling data
In Special Collection:
Celebrating the Achievements and Life of Paul H. Holloway
J. Vac. Sci. Technol. B 43, 022804 (2025)
https://doi.org/10.1116/6.0004306
Optimal structural design of nanoscale dual-gate air-channel triode via 3D simulation
J. Vac. Sci. Technol. B 43, 022805 (2025)
https://doi.org/10.1116/6.0004317
Enzymatic degradation of cellulosic fabrics modified with atomic layer deposited aluminum oxide thin films
In Special Collection:
Papers from the AVS 70th International Symposium
J. Vac. Sci. Technol. B 43, 022806 (2025)
https://doi.org/10.1116/6.0004299
Effect of low-pressure postannealing on the electrical properties of VO2 thin films
J. Vac. Sci. Technol. B 43, 022807 (2025)
https://doi.org/10.1116/6.0004435
Microelectronic and Nanoelectronic Devices
Tungsten oxide nanowires prepared by thermal oxidation for application in cold cathode flat panel x-ray source
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 43, 023201 (2025)
https://doi.org/10.1116/6.0004123
Auto-ponderomotive beam guiding up to 9.5 keV
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 43, 023202 (2025)
https://doi.org/10.1116/6.0004293
Analysis of the adhesion structure between the cycloolefin polymer and the copper seed layer formed using medium-vacuum sputtering
In Special Collection:
Papers from the International Symposium on Sputtering and Plasma Processes 2024.
J. Vac. Sci. Technol. B 43, 023203 (2025)
https://doi.org/10.1116/6.0004239
In situ field emission study of TiN-coated ZnO nanowires
In Special Collection:
Vacuum Nanoelectronics
Xinran Li; Guichen Song; Guofu Zhang; Zhuoran Ou; Zhipeng Zhang; Shaozhi Deng; Ningsheng Xu; Jun Chen
J. Vac. Sci. Technol. B 43, 023204 (2025)
https://doi.org/10.1116/6.0004234
Study of the impact of electrode surface roughness on the field-emission properties of solid-state structures with a nanoscale vacuum gap
J. Vac. Sci. Technol. B 43, 023205 (2025)
https://doi.org/10.1116/6.0004226
Plasmonics
Study on the etching mechanism of quartz using dual-frequency (60 MHz/400 KHz) capacitively coupled C4F8/Ar/O2 plasma
J. Vac. Sci. Technol. B 43, 023601 (2025)
https://doi.org/10.1116/6.0004206
Experimental investigation of the feasibility of in situ plasma cleaning in normal-conducting copper cavities
J. Vac. Sci. Technol. B 43, 023602 (2025)
https://doi.org/10.1116/6.0004012
Measurement and Characterization
Film characteristics of atmospheric pressure plasma-treated chitosan solution
J. Vac. Sci. Technol. B 43, 024001 (2025)
https://doi.org/10.1116/6.0004076
High-precision thermal characterization technique with dual-laser Raman thermometry
J. Vac. Sci. Technol. B 43, 024005 (2025)
https://doi.org/10.1116/6.0004303
Methods for automatically obtaining the sputtering-induced roughness upon depth profiling of polycrystalline films
In Special Collection:
Celebrating the Achievements and Life of Paul H. Holloway
J. Vac. Sci. Technol. B 43, 024006 (2025)
https://doi.org/10.1116/6.0004323
Behavior of bipolar pulsed high-power impulse magnetron sputtering plasma studied using Langmuir probe
In Special Collection:
Papers from the International Symposium on Sputtering and Plasma Processes 2024.
J. Vac. Sci. Technol. B 43, 024007 (2025)
https://doi.org/10.1116/6.0004188
Vacuum Measurement and Technology
Cathodoluminescence from Y2O3:Er3+: A metal oxide-based green nanophosphor for field emission displays
In Special Collection:
Celebrating the Achievements and Life of Paul H. Holloway
J. Vac. Sci. Technol. B 43, 024201 (2025)
https://doi.org/10.1116/6.0004125
Investigation of the performance optimization of the low-voltage, non-magnetic, pyroelectricity-based ion pump
J. Vac. Sci. Technol. B 43, 024202 (2025)
https://doi.org/10.1116/6.0004229
Comparative research on the secondary electron yields and photon-stimulated desorption of Ti and Pd/Ti bilayer thin films
Tao Guo; Xinyu Jin; Xiaopeng Xu; Xuesong Zhou; Wenjing Ma; Le Fan; Yuanzhi Hong; Xin Liu; Sihui Wang
J. Vac. Sci. Technol. B 43, 024203 (2025)
https://doi.org/10.1116/6.0004378
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Science challenges and research opportunities for plasma applications in microelectronics
David B. Graves, Catherine B. Labelle, et al.
Novel low-temperature and high-flux hydrogen plasma source for extreme-ultraviolet lithography applications
A. S. Stodolna, T. W. Mechielsen, et al.