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Study on geometry-dependent n+-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application
Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes
Remote plasma-enhanced chemical vapor deposition of GeSn on Si (100), Si (111), sapphire, and fused silica substrates
Novel low-temperature and high-flux hydrogen plasma source for extreme-ultraviolet lithography applications
Is the linear relationship between the slope and intercept observed in field emission S-K plots an artifact?
Study of selected mild steels for application in vacuum systems of future gravitational wave detectors
ARTICLES
Electronic and Optoelectronic Materials, Devices and Processing
Study on geometry-dependent n+-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application
J. Vac. Sci. Technol. B 42, 052201 (2024)
https://doi.org/10.1116/6.0003690
Interface chemistry, band alignment, and thermal stability study of Sn metal contact on bulk and monolayer MoS2
In Special Collection:
Physics and Chemistry of Surfaces and Interfaces
J. Vac. Sci. Technol. B 42, 052202 (2024)
https://doi.org/10.1116/6.0003845
Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes
In Special Collection:
Celebrating the Achievements and Life of Paul H. Holloway
J. Vac. Sci. Technol. B 42, 052203 (2024)
https://doi.org/10.1116/6.0003819
Remote plasma-enhanced chemical vapor deposition of GeSn on Si (100), Si (111), sapphire, and fused silica substrates
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 052204 (2024)
https://doi.org/10.1116/6.0003689
Near zero-field magnetoresistance and defects in gallium nitride pn junctions
In Special Collection:
Physics and Chemistry of Surfaces and Interfaces
J. Vac. Sci. Technol. B 42, 052205 (2024)
https://doi.org/10.1116/6.0003855
MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes
In Special Collection:
Celebrating the Achievements and Life of Paul H. Holloway
J. Vac. Sci. Technol. B 42, 052206 (2024)
https://doi.org/10.1116/6.0003818
Dynamic switching operation of diamond MOSFETs with NO2 p-type doping and Al2O3 gate insulation and passivation
J. Vac. Sci. Technol. B 42, 052207 (2024)
https://doi.org/10.1116/5.0218780
Optical and electronic properties of Ge1−xSnx/Si alloys grown by remote plasma-enhanced chemical vapor deposition
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 052208 (2024)
https://doi.org/10.1116/6.0003759
Infrared optical properties of SiGeSn and GeSn layers grown by molecular beam epitaxy
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 052209 (2024)
https://doi.org/10.1116/6.0003585
Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 052210 (2024)
https://doi.org/10.1116/6.0003798
Lithography
Novel low-temperature and high-flux hydrogen plasma source for extreme-ultraviolet lithography applications
In Special Collection:
CHIPS: Future of Semiconductor Processing and Devices
J. Vac. Sci. Technol. B 42, 052601 (2024)
https://doi.org/10.1116/6.0003701
Numerical investigation of flow and particles contamination in reticle mini environment for extreme ultraviolet lithography
J. Vac. Sci. Technol. B 42, 052602 (2024)
https://doi.org/10.1116/6.0003791
Efficient mask optimization for enhanced digital maskless lithography quality by improved particle swarm optimization algorithm
J. Vac. Sci. Technol. B 42, 052603 (2024)
https://doi.org/10.1116/6.0003919
Nanoscale Science and Technology
Radio frequency side-gate nanoscale vacuum channel triode
J. Vac. Sci. Technol. B 42, 052801 (2024)
https://doi.org/10.1116/6.0003823
MEMS and NEMS
Fabrication of hollow silicon microneedles using grayscale lithography and deep reactive ion etching
J. Vac. Sci. Technol. B 42, 053001 (2024)
https://doi.org/10.1116/6.0003711
Effect of Triton X-100 surfactant and agitation on tetramethylammonium hydroxide wet etching for microneedle fabrication
J. Vac. Sci. Technol. B 42, 053002 (2024)
https://doi.org/10.1116/6.0003852
Microelectronic and Nanoelectronic Devices
Is the linear relationship between the slope and intercept observed in field emission S-K plots an artifact?
J. Vac. Sci. Technol. B 42, 053201 (2024)
https://doi.org/10.1116/6.0003828
Measurement and Characterization
Effect of sputter power on red-shifted optoelectronic properties in magnetron sputtered Ag/ZnO thin films
J. Vac. Sci. Technol. B 42, 054002 (2024)
https://doi.org/10.1116/6.0003813
Structural, surface, and upconversion luminescence properties of pulsed laser-deposited Y2O3:Ho3+,Yb3+ thin films
In Special Collection:
Celebrating the Achievements and Life of Paul H. Holloway
J. Vac. Sci. Technol. B 42, 054004 (2024)
https://doi.org/10.1116/6.0003880
Current–voltage characteristics of Ag/Nb:SrTiO3/Ag and Au/Nb:SrTiO3/Ag heterostructures
J. Vac. Sci. Technol. B 42, 054005 (2024)
https://doi.org/10.1116/6.0003843
Vacuum Measurement and Technology
Design of plasma strip chamber for uniform gas supply with fluid flow simulation
J. Vac. Sci. Technol. B 42, 054201 (2024)
https://doi.org/10.1116/6.0003782
Study of selected mild steels for application in vacuum systems of future gravitational wave detectors
J. Vac. Sci. Technol. B 42, 054202 (2024)
https://doi.org/10.1116/6.0003820
Interfacial reaction between the nickel-based superalloy and the Al2O3 crucible during vacuum induction melting
J. Vac. Sci. Technol. B 42, 054203 (2024)
https://doi.org/10.1116/6.0003860
Technical Notes
Membrane-electrode junction properties for optimum potentiometric hydrogen sensor response
J. Vac. Sci. Technol. B 42, 055001 (2024)
https://doi.org/10.1116/6.0003829
