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Future of plasma etching for microelectronics: Challenges and opportunities
Science challenges and research opportunities for plasma applications in microelectronics
Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Compositional dependence of direct transition energies in SixGe1−x−ySny alloys lattice-matched to Ge/GaAs
Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
Honeycomb-shaped vertically aligned carbon nanotubes decorated with molybdenum trioxide as an electrochemical sensor for glucose
Letters
Millimeter-wave generation with a room-temperature nonlinear quantum cascade laser
In Special Collection:
Mid-Infrared Optoelectronic Materials and Devices
J. Vac. Sci. Technol. B 42, 040601 (2024)
https://doi.org/10.1116/6.0003536
Mitigation of electronic crosstalk interference in graphene transistor biosensors
J. Vac. Sci. Technol. B 42, 040602 (2024)
https://doi.org/10.1116/6.0003783
Roadmaps
Future of plasma etching for microelectronics: Challenges and opportunities
In Special Collection:
CHIPS: Future of Semiconductor Processing and Devices
J. Vac. Sci. Technol. B 42, 041501 (2024)
https://doi.org/10.1116/6.0003579
ARTICLES
Electronic and Optoelectronic Materials, Devices and Processing
Electronic and optical properties of lithium-doped boron nitride nanoribbons using density functional theory
J. Vac. Sci. Technol. B 42, 042201 (2024)
https://doi.org/10.1116/6.0003635
Science challenges and research opportunities for plasma applications in microelectronics
In Special Collection:
CHIPS: Future of Semiconductor Processing and Devices
J. Vac. Sci. Technol. B 42, 042202 (2024)
https://doi.org/10.1116/6.0003531
Use of plasma process diagnostic sensors for the monitoring of in situ dry cleaning of plasma enhanced chemical vapor deposition chamber
J. Vac. Sci. Technol. B 42, 042203 (2024)
https://doi.org/10.1116/6.0003288
Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode
J. Vac. Sci. Technol. B 42, 042204 (2024)
https://doi.org/10.1116/6.0003608
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 042205 (2024)
https://doi.org/10.1116/6.0003561
Compositional dependence of direct transition energies in SixGe1−x−ySny alloys lattice-matched to Ge/GaAs
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 042206 (2024)
https://doi.org/10.1116/6.0003737
X-ray photoelectron spectroscopy surface oxidation study of remote plasma-enhanced chemical vapor deposition-grown Ge1−xSnx/Si alloys
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 042207 (2024)
https://doi.org/10.1116/6.0003688
Roughness-generation mechanism of Ru etching using Cl2/O2-based plasma for advanced interconnect
J. Vac. Sci. Technol. B 42, 042208 (2024)
https://doi.org/10.1116/6.0003736
Desorption model of volatile Ru species induced by partial chlorination on Ru(0001) under an O2/Cl2-based plasma process
J. Vac. Sci. Technol. B 42, 042209 (2024)
https://doi.org/10.1116/6.0003706
Magneto-transport study on Sn-rich Sn1−xGex thin films enabled by CdTe buffer layer
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 042210 (2024)
https://doi.org/10.1116/6.0003564
Transition from the regime of thermionic emission to the space-charge limited current regime under strong Shottky effects
J. Vac. Sci. Technol. B 42, 042212 (2024)
https://doi.org/10.1116/6.0003700
GaAs/GeSn/Ge n–i–p diodes and light emitting diodes formed via grafting
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 042213 (2024)
https://doi.org/10.1116/6.0003619
Lithography
Lithography mask thermal and stress effect for the machine overlay compensation
J. Vac. Sci. Technol. B 42, 042601 (2024)
https://doi.org/10.1116/6.0003693
Patterning functional oxides: Some failures and solutions in fabricating a Hall bar
J. Vac. Sci. Technol. B 42, 042602 (2024)
https://doi.org/10.1116/6.0003713
Soft and hard trimming of imprint resist masks to fabricate silicon nanodisk arrays with different edge roughness
J. Vac. Sci. Technol. B 42, 042603 (2024)
https://doi.org/10.1116/6.0003779
Nanoscale Science and Technology
Comparative study on variable axis lens systems based on tapered deflectors
J. Vac. Sci. Technol. B 42, 042801 (2024)
https://doi.org/10.1116/6.0003605
Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 042802 (2024)
https://doi.org/10.1116/6.0003734
Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping
J. Vac. Sci. Technol. B 42, 042803 (2024)
https://doi.org/10.1116/5.0215419
MEMS and NEMS
Carbon nanotube collimator as an vacuum ultraviolet window
J. Vac. Sci. Technol. B 42, 043001 (2024)
https://doi.org/10.1116/6.0003675
Microelectronic and Nanoelectronic Devices
5.0 μm emitting interband cascade lasers with superlattice and bulk AlGaAsSb claddings
In Special Collection:
Mid-Infrared Optoelectronic Materials and Devices
J. Vac. Sci. Technol. B 42, 043202 (2024)
https://doi.org/10.1116/6.0003584
Cu1−xAlx films as alternatives to copper for advanced interconnect metallization
In Special Collection:
CHIPS: Future of Semiconductor Processing and Devices
J. Vac. Sci. Technol. B 42, 043203 (2024)
https://doi.org/10.1116/6.0003634
Electron emission from HfC(100) single-crystal tip
J. Vac. Sci. Technol. B 42, 043204 (2024)
https://doi.org/10.1116/6.0003632
Organic Electronic and Optoelectronic Devices
Carbonized polyvinylidene difluoride films irradiated by variable-energy Ar+: Tunable morphology and resistive sensing
In Special Collection:
Physics and Chemistry of Surfaces and Interfaces
J. Vac. Sci. Technol. B 42, 043401 (2024)
https://doi.org/10.1116/6.0003657
Magnetic Devices and Spintronics
Performance enhancement in spin transfer torque magnetic random access memory through in situ cap layer optimization
J. Vac. Sci. Technol. B 42, 043801 (2024)
https://doi.org/10.1116/6.0003661
Measurement and Characterization
Comparison of GeSn alloy films prepared by ion implantation and remote plasma-enhanced chemical vapor deposition methods
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 044001 (2024)
https://doi.org/10.1116/6.0003668
In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 044002 (2024)
https://doi.org/10.1116/6.0003566
Matrices to enhance the ion yield of OLED molecules in ToF-SIMS: An interesting alchemist solution
J. Vac. Sci. Technol. B 42, 044003 (2024)
https://doi.org/10.1116/6.0003648
Emission enhancement of GaN field emitter arrays in an N2 environment
J. Vac. Sci. Technol. B 42, 044004 (2024)
https://doi.org/10.1116/6.0003704
Honeycomb-shaped vertically aligned carbon nanotubes decorated with molybdenum trioxide as an electrochemical sensor for glucose
J. Vac. Sci. Technol. B 42, 044005 (2024)
https://doi.org/10.1116/6.0003677
Vacuum Measurement and Technology
Upgrading of the modified Knudsen equation and its verification for calculating the gas flow rate through cylindrical tubes
J. Vac. Sci. Technol. B 42, 044201 (2024)
https://doi.org/10.1116/6.0003581
Numerical analysis of high vacuum packaging efficiency for narrow structured devices
J. Vac. Sci. Technol. B 42, 044202 (2024)
https://doi.org/10.1116/6.0003641
Research on the improvement of the adhesion strength of the Cu films deposited on the Al2O3 films
J. Vac. Sci. Technol. B 42, 044203 (2024)
https://doi.org/10.1116/6.0003649
Characteristics of a hybrid radio frequency capacitively and inductively coupled plasma using hydrogen gas
J. Vac. Sci. Technol. B 42, 044204 (2024)
https://doi.org/10.1116/5.0213602
