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New approach of local critical dimension uniformity improvement for via/contact hole etch with direct current superposition
Temperature-induced degradation of GaN HEMT: An in situ heating study
Generation of broadband optical chaos at mid-infrared wavelength with an interband cascade laser
Planar microcoil arrays for in vitro cellular-level micromagnetic activation of neurons
Temperature-dependent morphology and composition of ultra-thin GeSn epilayers prepared by remote plasma enhanced chemical vapor deposition
Effects of ion implantation with arsenic and boron in germanium-tin layers
Phase-shifted counterpropagating atmospheric pressure plasma jets: Characterization and interaction with materials
Novel surface wave technique for moderate-pressure plasma measurements
Monitoring of rapid thermal anneal with secondary ion mass spectrometry
Plasma confinement by an optoelectronic system
Treatment and aging studies of GaAs(111)B substrates for van der Waals chalcogenide film growth
Letters
Effects of high-temperature annealing on vacancy complexes and luminescence properties in multilayer periodic structures with elastically strained GeSiSn layers
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 030601 (2024)
https://doi.org/10.1116/6.0003557
ARTICLES
Electronic and Optoelectronic Materials, Devices and Processing
Analysis of temperature-dependent current–voltage characteristics of Schottky diodes by the modified thermionic emission current model
J. Vac. Sci. Technol. B 42, 032201 (2024)
https://doi.org/10.1116/6.0003463
Effect of beam and gate offset size on x-ray focal spot resolution of a cold cathode electron beam
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 42, 032202 (2024)
https://doi.org/10.1116/6.0003390
Multi-step plasma etching of high aspect ratio silicon nanostructures for metalens fabrication
J. Vac. Sci. Technol. B 42, 032203 (2024)
https://doi.org/10.1116/6.0003429
Wet and dry etching of ultrawide bandgap LiGa5O8 and LiGaO2
J. Vac. Sci. Technol. B 42, 032204 (2024)
https://doi.org/10.1116/6.0003450
Experimental study of flake graphite large-area explosion electron emission cathode performance based on particle size discrepancy
J. Vac. Sci. Technol. B 42, 032205 (2024)
https://doi.org/10.1116/6.0003373
Cryogenic etching of positively tapered silicon pillars with controllable profiles
J. Vac. Sci. Technol. B 42, 032206 (2024)
https://doi.org/10.1116/6.0003372
Characteristics of β-(AlxGa1−x)2O3/Ga2O3 dual-metal gate modulation-doped field-effect transistors simulated by TCAD
J. Vac. Sci. Technol. B 42, 032207 (2024)
https://doi.org/10.1116/6.0003502
New approach of local critical dimension uniformity improvement for via/contact hole etch with direct current superposition
J. Vac. Sci. Technol. B 42, 032208 (2024)
https://doi.org/10.1116/6.0003464
Temperature-induced degradation of GaN HEMT: An in situ heating study
J. Vac. Sci. Technol. B 42, 032209 (2024)
https://doi.org/10.1116/6.0003490
Molecular beam epitaxy growth and characterization of GePb alloys
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 032210 (2024)
https://doi.org/10.1116/6.0003567
Role of tin clustering in band structure and thermodynamic stability of GeSn by atomistic modeling
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 032211 (2024)
https://doi.org/10.1116/6.0003563
Effects of working pressure during magnetron sputtering on thermoelectric performance of flexible p-type Bi0.5Sb1.5Te3 thin films
J. Vac. Sci. Technol. B 42, 032212 (2024)
https://doi.org/10.1116/6.0003631
Generation of broadband optical chaos at mid-infrared wavelength with an interband cascade laser
In Special Collection:
Mid-Infrared Optoelectronic Materials and Devices
J. Vac. Sci. Technol. B 42, 032213 (2024)
https://doi.org/10.1116/6.0003572
Lithography
Method to reconstruct three-dimensional profile based on top-view SEM images
J. Vac. Sci. Technol. B 42, 032601 (2024)
https://doi.org/10.1116/6.0003471
Thermal analysis with high accuracy of multi-beam mask fabrication
J. Vac. Sci. Technol. B 42, 032602 (2024)
https://doi.org/10.1116/6.0003477
Nanoscale Science and Technology
CuO-ZnO nanocomposite for photocatalytic application
In Special Collection:
Papers from the 12th Vacuum Technique Conference 2023
J. Vac. Sci. Technol. B 42, 032801 (2024)
https://doi.org/10.1116/6.0003482
Ordered silicon nanocone fabrication by using pseudo-Bosch process and maskless etching
J. Vac. Sci. Technol. B 42, 032802 (2024)
https://doi.org/10.1116/6.0003394
Effects of graphene doping and gas adsorption on the peak positions of graphene plasmon resonance and adsorbate infrared absorption
J. Vac. Sci. Technol. B 42, 032803 (2024)
https://doi.org/10.1116/6.0003588
MEMS and NEMS
Planar microcoil arrays for in vitro cellular-level micromagnetic activation of neurons
J. Vac. Sci. Technol. B 42, 033001 (2024)
https://doi.org/10.1116/6.0003362
Fabrication of silicon sharp nanocones using dry etch with periodic oxygen plasma shrinking and wet etch
J. Vac. Sci. Technol. B 42, 033002 (2024)
https://doi.org/10.1116/6.0003516
Microelectronic and Nanoelectronic Devices
Group-IV based pin photodetectors for C-band application
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 033202 (2024)
https://doi.org/10.1116/6.0003556
Organic Electronic and Optoelectronic Devices
Parylene-C-based flexible organic thin-film transistors and their reliability improvement using SU-8 passivation
J. Vac. Sci. Technol. B 42, 033402 (2024)
https://doi.org/10.1116/5.0197032
Measurement and Characterization
Temperature-dependent morphology and composition of ultra-thin GeSn epilayers prepared by remote plasma enhanced chemical vapor deposition
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 034001 (2024)
https://doi.org/10.1116/6.0003445
Effects of ion implantation with arsenic and boron in germanium-tin layers
In Special Collection:
Developing SiGeSn Technology: Materials and Devices
J. Vac. Sci. Technol. B 42, 034002 (2024)
https://doi.org/10.1116/6.0003565
Study of defects population and contaminations in silica/tantala coated mirrors
J. Vac. Sci. Technol. B 42, 034003 (2024)
https://doi.org/10.1116/6.0003510
Phase-shifted counterpropagating atmospheric pressure plasma jets: Characterization and interaction with materials
J. Vac. Sci. Technol. B 42, 034004 (2024)
https://doi.org/10.1116/6.0003485
Novel surface wave technique for moderate-pressure plasma measurements
J. Vac. Sci. Technol. B 42, 034005 (2024)
https://doi.org/10.1116/6.0003331
Evolution of hard carbon layers on Ti-45Al-2Nb-2Mn-1B by plasma enhanced chemical vapor deposition of hydrocarbons and hydrogen
J. Vac. Sci. Technol. B 42, 034006 (2024)
https://doi.org/10.1116/6.0003483
Monitoring of rapid thermal anneal with secondary ion mass spectrometry
J. Vac. Sci. Technol. B 42, 034007 (2024)
https://doi.org/10.1116/6.0003599
Vacuum Measurement and Technology
Plasma confinement by an optoelectronic system
J. Vac. Sci. Technol. B 42, 034201 (2024)
https://doi.org/10.1116/6.0003520
One-step formation of ZrON thin film on surface of carbon fine particles for membrane electrode assembly
J. Vac. Sci. Technol. B 42, 034202 (2024)
https://doi.org/10.1116/6.0003542
Technical Notes
Treatment and aging studies of GaAs(111)B substrates for van der Waals chalcogenide film growth
J. Vac. Sci. Technol. B 42, 033201 (2024)
https://doi.org/10.1116/6.0003470
Errata
Erratum: “All field emission experiments are noisy, … are any meaningful?” [J. Vac. Sci. Technol. B 41, 024001 (2023)]
J. Vac. Sci. Technol. B 42, 033401 (2024)
https://doi.org/10.1116/6.0003654
