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Integrated multichip field emission electron source fabricated by laser-micromachining and MEMS technology
Influence of Al2O3 atomic-layer deposition temperature on positive-bias instability of metal/Al2O3/β-Ga2O3 capacitors
Fabrication of blazed gratings by tilted reactive ion beam etching with the side mask for augmented reality applications
Nanoimprint lithography guiding templates for advanced magnetic media fabrication
Degradation of GaN field emitter arrays induced by O2 exposure
Heating samples to 2000 °C and above for scanning tunneling microscopy studies in ultrahigh vacuum
Review Articles
Doping engineering: Next step toward room temperature performance of terahertz quantum cascade lasers
In Special Collection:
Mid-Infrared Optoelectronic Materials and Devices
J. Vac. Sci. Technol. B 42, 010801 (2024)
https://doi.org/10.1116/6.0003160
ARTICLES
Electronic and Optoelectronic Materials, Devices and Processing
Integrated multichip field emission electron source fabricated by laser-micromachining and MEMS technology
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 42, 012201 (2024)
https://doi.org/10.1116/6.0003233
Influence of gate material and diamond surface termination on current conduction in metal/Al2O3/diamond capacitors
J. Vac. Sci. Technol. B 42, 012202 (2024)
https://doi.org/10.1116/6.0003272
Room-temperature nanostructured PbSe/CdSe mid-infrared photodetector: Annealing effects
In Special Collection:
Mid-Infrared Optoelectronic Materials and Devices
J. Vac. Sci. Technol. B 42, 012204 (2024)
https://doi.org/10.1116/6.0003193
Development of “GaSb-on-silicon” metamorphic substrates for optoelectronic device growth
In Special Collection:
Mid-Infrared Optoelectronic Materials and Devices
J. Vac. Sci. Technol. B 42, 012205 (2024)
https://doi.org/10.1116/6.0003211
Growth of CdS heterojunctions on Cd0.9Zn0.1Te single crystals with H2S
J. Vac. Sci. Technol. B 42, 012206 (2024)
https://doi.org/10.1116/6.0003265
Influence of Al2O3 atomic-layer deposition temperature on positive-bias instability of metal/Al2O3/β-Ga2O3 capacitors
J. Vac. Sci. Technol. B 42, 012207 (2024)
https://doi.org/10.1116/6.0003186
Lithography
Rapid prototyping of etch test structures for hard mask development using electron beam lithography
J. Vac. Sci. Technol. B 42, 012601 (2024)
https://doi.org/10.1116/6.0003215
MEMS and NEMS
Fabrication of blazed gratings by tilted reactive ion beam etching with the side mask for augmented reality applications
J. Vac. Sci. Technol. B 42, 013001 (2024)
https://doi.org/10.1116/6.0003322
Microelectronic and Nanoelectronic Devices
New method of fabrication of suspended metallic single electron transistor (SET)
J. Vac. Sci. Technol. B 42, 013201 (2024)
https://doi.org/10.1116/6.0003025
Effect of water vapor desorption on the performance of gallium nitride field emitter array
J. Vac. Sci. Technol. B 42, 013202 (2024)
https://doi.org/10.1116/6.0003187
Electron emission properties of titanium nitride coated volcano-structured silicon emitters
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 42, 013203 (2024)
https://doi.org/10.1116/6.0003234
Magnetic Devices and Spintronics
Nanoimprint lithography guiding templates for advanced magnetic media fabrication
J. Vac. Sci. Technol. B 42, 013801 (2024)
https://doi.org/10.1116/6.0003210
Measurement and Characterization
Degradation of GaN field emitter arrays induced by O2 exposure
J. Vac. Sci. Technol. B 42, 014001 (2024)
https://doi.org/10.1116/6.0003314
Vacuum Measurement and Technology
Heating samples to 2000 °C and above for scanning tunneling microscopy studies in ultrahigh vacuum
J. Vac. Sci. Technol. B 42, 014201 (2024)
https://doi.org/10.1116/6.0003280
