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Maximizing the performance of a field emission device by profiling the emitter’s height distribution

In Special Collection: Vacuum Nanoelectronics

Sergey V. Filippov; Fernando F. Dall’Agnol; Eugeni O. Popov; Anatoly G. Kolosko; Thiago A. de Assis

J. Vac. Sci. Technol. B 41, 050601 (2023) https://doi.org/10.1116/6.0003016

Abstract

View articletitled, Maximizing the performance of a field emission device by profiling the emitter’s height distribution

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ARTICLES

Electronic and Optoelectronic Materials, Devices and Processing

Electrochemical bulk and film-type oxygen sensors: Strategies for detecting extremely low concentration in hydrogen environments

Soon-Won Jung; Min Hyuk Chang; Kyeong-Joon Jo; Mi-Hee Jung; Seung-Yun Lee

J. Vac. Sci. Technol. B 41, 052201 (2023) https://doi.org/10.1116/6.0002631

Abstract

View articletitled, Electrochemical bulk and film-type oxygen sensors: Strategies for detecting extremely low concentration in hydrogen environments

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Plasma processing and annealing for defect management at SiO₂/Si interface

Shota Nunomura; Takayoshi Tsutsumi; Isao Sakata; Masaru Hori

J. Vac. Sci. Technol. B 41, 052202 (2023) https://doi.org/10.1116/6.0002822

Abstract

View articletitled, Plasma processing and annealing for defect management at SiO2/Si interface

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Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies

Sumit Choudhary; Midathala Yogesh; Daniel Schwarz; Hannes S. Funk; Subrata Ghosh; Satinder K. Sharma; Jörg Schulze; Kenneth E. Gonsalves

J. Vac. Sci. Technol. B 41, 052203 (2023) https://doi.org/10.1116/6.0002767

Abstract

View articletitled, Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies

Supplementary Material

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Method for improving dry etching end point detection based on change in time accumulation correlation of plasma emitting wavelengths

Se-Jin Oh; Chang-Gil Son; Min-kyu Sohn; Doug-Yong Sung; Min-Sung Kim; Ji-Soo Im; Sang Ki Nam

J. Vac. Sci. Technol. B 41, 052204 (2023) https://doi.org/10.1116/6.0002890

Abstract

View articletitled, Method for improving dry etching end point detection based on change in time accumulation correlation of plasma emitting wavelengths

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Microstructure, creep properties, and electrical resistivity of magnetron sputtering deposited SAC305 thin films

Manish Ojha; Yousuf Mohammed; D. S. Stone; A. A. Elmustafa

J. Vac. Sci. Technol. B 41, 052205 (2023) https://doi.org/10.1116/6.0002949

Abstract

View articletitled, Microstructure, creep properties, and electrical resistivity of magnetron sputtering deposited SAC305 thin films

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Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different hole-concentration p-base layers

Akira Mase; Yusuke Iida; Masaya Takimoto; Yutaka Nikai; Takashi Egawa; Makoto Miyoshi

J. Vac. Sci. Technol. B 41, 052206 (2023) https://doi.org/10.1116/6.0002577

Abstract

View articletitled, Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different hole-concentration p-base layers

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CHORUS

Top electrode dependence of the write-once-read-many-times resistance switching in BiFeO₃ films

Yajun Fu; Wei Tang; Jin Wang; Linhong Cao

J. Vac. Sci. Technol. B 41, 052207 (2023) https://doi.org/10.1116/6.0002946

Abstract

View articletitled, Top electrode dependence of the write-once-read-many-times resistance switching in BiFeO3 films

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Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers

Hryhorii Stanchu; Abdulla Said; Oluwatobi Olorunsola; Sudip Acharya; Sylvester Amoah; Mohammad Zamani-Alavijeh; Fernando M. de Oliveira; Santosh Karki Chhetri; Jin Hu; Yuriy I. Mazur; Shui-Qing Yu; Gregory Salamo

J. Vac. Sci. Technol. B 41, 052208 (2023) https://doi.org/10.1116/6.0002957

Abstract

View articletitled, Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers

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Metal-pattern preparation based on selective deposition using soft organofluorine surfaces

Tsuyoshi Tsujioka

J. Vac. Sci. Technol. B 41, 052209 (2023) https://doi.org/10.1116/6.0002832

Abstract

View articletitled, Metal-pattern preparation based on selective deposition using soft organofluorine surfaces

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Investigation of the deposition of α-tantalum (110) films on a-plane sapphire substrate by molecular beam epitaxy for superconducting circuit

Haolin Jia; Boyi zhou; Tao Wang; Yanfu Wu; Lina Yang; Zengqian Ding; Shuming Li; Xiao Cai; Kanglin Xiong; Jiagui Feng

J. Vac. Sci. Technol. B 41, 052210 (2023) https://doi.org/10.1116/6.0002886

Abstract

View articletitled, Investigation of the deposition of α-tantalum (110) films on a-plane sapphire substrate by molecular beam epitaxy for superconducting circuit

Supplementary Material

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Energy Conversion and Storage Devices

Electrochemical imaging correlated to hydrogen evolution reaction on transition metal dichalcogenide, WS₂

In Special Collection: Papers from the 14th International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC '22)

Akichika Kumatani; Hiroto Ogawa; Takahiko Endo; Yu Kobayashi; Jana Lustikova; Hiroki Ida; Yasufumi Takahashi; Tomokazu Matsue; Yasumitsu Miyata; Hitoshi Shiku

J. Vac. Sci. Technol. B 41, 052401 (2023) https://doi.org/10.1116/6.0002706

Abstract

View articletitled, Electrochemical imaging correlated to hydrogen evolution reaction on transition metal dichalcogenide, WS2

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CHORUS

Lithography

Synergy of cold development and electron-beam exposure for Si nanotip patterning in quantum-electronic devices

I-Hsiang Wang; Pei-Wen Li

J. Vac. Sci. Technol. B 41, 052601 (2023) https://doi.org/10.1116/6.0002845

Abstract

View articletitled, Synergy of cold development and electron-beam exposure for Si nanotip patterning in quantum-electronic devices

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Interpolation and difference optimized machine learning model for accurate prediction of silicon etching depth with small sample dataset

Ye Yang; Yang Xu

J. Vac. Sci. Technol. B 41, 052602 (2023) https://doi.org/10.1116/6.0002823

Abstract

View articletitled, Interpolation and difference optimized machine learning model for accurate prediction of silicon etching depth with small sample dataset

Supplementary Material

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Nanoscale Science and Technology

Understanding the origin of micro/nanoporous thin films of PMMA

In Special Collection: Honoring Dr. Gary McGuire’s Research and Leadership as Editor of the Journal of Vacuum Science & Technology for Three Decades

Sadie M. Flagg; Sarah E. Colbert; Sarah S. Jiudice; Erik S. Peterson; Brian H. Augustine

J. Vac. Sci. Technol. B 41, 052801 (2023) https://doi.org/10.1116/6.0002787

Abstract

View articletitled, Understanding the origin of micro/nanoporous thin films of PMMA

Supplementary Material

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Influence of electron beam irradiation on nanoscale adhesion during colloidal probe experiments inside the scanning electron microscope

Waldemar Klauser; Turgut Nasrullayev; Sergej Fatikow

J. Vac. Sci. Technol. B 41, 052802 (2023) https://doi.org/10.1116/6.0002764

Abstract

View articletitled, Influence of electron beam irradiation on nanoscale adhesion during colloidal probe experiments inside the scanning electron microscope

Supplementary Material

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Strong-field electron emission from gold needle tips

In Special Collection: Physics and Chemistry of Surfaces and Interfaces

Jonas Heimerl; Stefan Meier; Adrian Kirchner; Tobias Weitz; Peter Hommelhoff

J. Vac. Sci. Technol. B 41, 052803 (2023) https://doi.org/10.1116/6.0002916

Abstract

View articletitled, Strong-field electron emission from gold needle tips

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Ce_0.7La_0.15Ca_0.15O_2−δ nanoparticles synthesis via colloidal solution combustion method: Studying structural and physicochemical properties and Congo Red dye photodegradation

Adnene Midouni; Anis Chaouachi; Sami Barkaoui; Nejib Abassi; Samir Chakhari; Ammar Mahjoubi; Djamel Ghernaout; Ahmed Hichem Hamzaoui; Muhammad Imran Khan; Noureddine Elboughdiri

J. Vac. Sci. Technol. B 41, 052804 (2023) https://doi.org/10.1116/6.0002825

Abstract

View articletitled, Ce0.7La0.15Ca0.15O2−δ nanoparticles synthesis via colloidal solution combustion method: Studying structural and physicochemical properties and Congo Red dye photodegradation

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Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film

In Special Collection: Physics and Chemistry of Surfaces and Interfaces

Fernando M. de Oliveira; Chen Li; Pijush K. Ghosh; Andrian V. Kuchuk; Morgan E. Ware; Yuriy I. Mazur; Gregory J. Salamo

J. Vac. Sci. Technol. B 41, 052805 (2023) https://doi.org/10.1116/6.0002866

Abstract

View articletitled, Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film

Supplementary Material

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MEMS and NEMS

Measurements of He-Ar, He-N₂, and He-air thermal creep slip and accommodation coefficients at high temperatures

Jason Wilson; Kyle L. Walton; Earl L. Tipton; Tushar K. Ghosh; Robert V. Tompson; Sudarshan K. Loyalka

J. Vac. Sci. Technol. B 41, 053001 (2023) https://doi.org/10.1116/6.0002704

Abstract

View articletitled, Measurements of He-Ar, He-N2, and He-air thermal creep slip and accommodation coefficients at high temperatures

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CHORUS

Microelectronic and Nanoelectronic Devices

Effects of gases on the field emission performance of silicon gated field emitter array

In Special Collection: Celebrating the Early Career Professionals Contributing to the Advancement of Microelectronics and Nanotechnology

Ranajoy Bhattacharya; Mason Cannon; Girish Rughoobur; Nedeljko Karaulac; Winston Chern; Reza Farsad Asadi; Zheng Tao; Bruce E. Gnade; Akintunde Ibitayo Akinwande; Jim Browning

J. Vac. Sci. Technol. B 41, 053201 (2023) https://doi.org/10.1116/6.0002789

Abstract

View articletitled, Effects of gases on the field emission performance of silicon gated field emitter array

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Plasma-induced energy band evolution for two-dimensional heterogeneous anti-ambipolar transistors

In Special Collection: Celebrating the Early Career Professionals Contributing to the Advancement of Microelectronics and Nanotechnology

Simran Shahi; Asma Ahmed; Ruizhe Yang; Anthony Cabanillas; Anindita Chakravarty; Maomao Liu; Hemendra Nath Jaiswal; Yu Fu; Yutong Guo; Satyajeetsinh Shaileshsin Jadeja; Hariharan Murugesan; Anthony Butler; Chu Te Chen; Joel Muhigirwa; Mohamed Enaitalla; Jun Liu; Fei Yao; Huamin Li

J. Vac. Sci. Technol. B 41, 053202 (2023) https://doi.org/10.1116/6.0002888

Abstract

View articletitled, Plasma-induced energy band evolution for two-dimensional heterogeneous anti-ambipolar transistors

Supplementary Material

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CHORUS

Influence of external circuitry on CF₄ breakdown process in capacitively coupled plasma

Zhaoyu Chen; Jingwen Xu; Hongyu Wang; Hao Wu; Wei Jiang; Ya Zhang

J. Vac. Sci. Technol. B 41, 053203 (2023) https://doi.org/10.1116/5.0161552

Abstract

View articletitled, Influence of external circuitry on CF4 breakdown process in capacitively coupled plasma

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Measurement and Characterization

Effect of annealing on focused ion beam induced surface damages in silicon analyzed by micro-Raman spectroscopy

Yoshiharu Goshima; Shinsuke Kashiwagi; Takahiro Namazu

J. Vac. Sci. Technol. B 41, 054001 (2023) https://doi.org/10.1116/6.0002895

Abstract

View articletitled, Effect of annealing on focused ion beam induced surface damages in silicon analyzed by micro-Raman spectroscopy

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Cluster-induced desorption/ionization mass spectrometry of Ir(ppy)₃

In Special Collection: Secondary Ion Mass Spectrometry (SIMS)

Philip Keller; Satoka Aoyagi; Michael Dürr

J. Vac. Sci. Technol. B 41, 054002 (2023) https://doi.org/10.1116/6.0002556

Abstract

View articletitled, Cluster-induced desorption/ionization mass spectrometry of Ir(ppy)3

Supplementary Material

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Vacuum Measurement and Technology

Fabrication of pyramid-shaped gold tip for adiabatic nanofocusing of surface plasmon polaritons

Jamal Kheiro Khalaf; Diyar Sadiq

J. Vac. Sci. Technol. B 41, 054201 (2023) https://doi.org/10.1116/6.0002505

Abstract

View articletitled, Fabrication of pyramid-shaped gold tip for adiabatic nanofocusing of surface plasmon polaritons

Supplementary Material

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Investigation of the intrinsic outgassing rates for narrow structured vacuum devices under readsorption effect

Zhengwei Mei; Hailin Bi; Qing Cao; Yuqing Wang; Wenyu Lin; Junfeng Ye; Xudi Wang

J. Vac. Sci. Technol. B 41, 054202 (2023) https://doi.org/10.1116/6.0002906

Abstract

View articletitled, Investigation of the intrinsic outgassing rates for narrow structured vacuum devices under readsorption effect

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Errata

Erratum: “Electronic structure of InSb (001), (110), and (111)B surfaces” [J. Vac. Sci. Technol. B 41, 032808 (2023)]

Jason T. Dong; Hadass S. Inbar; Mihir Pendharkar; Teun A. J. van Schijndel; Elliot C. Young; Connor P. Dempsey; Christopher J. Palmstrøm

J. Vac. Sci. Technol. B 41, 053401 (2023) https://doi.org/10.1116/6.0002960

Extract

View articletitled, Erratum: “Electronic structure of InSb (001), (110), and (111)B surfaces” [J. Vac. Sci. Technol. B 41, 032808 (2023)]

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Comments

Response to “Comment on ‘Restoration of the original depth distribution from the SIMS profile using the depth resolution function in framework of RMR model’” [J. Vac. Sci. Technol. B 41, 024003 (2023)]

Y. Kudriavtsev; R. Asomoza; K. D. Moiseev

J. Vac. Sci. Technol. B 41, 056001 (2023) https://doi.org/10.1116/6.0002810

Extract

View articletitled, Response to “Comment on ‘Restoration of the original depth distribution from the SIMS profile using the depth resolution function in framework of RMR model’” [J. Vac. Sci. Technol. B 41, 024003 (2023)]

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Comment on “Restoration of the original depth distribution from the SIMS profile using the depth resolution function in framework of RMR model” [J. Vac. Sci. Technol. B 41, 024003 (2023)]

Siegfried Hofmann; JiangYong Wang

J. Vac. Sci. Technol. B 41, 056002 (2023) https://doi.org/10.1116/6.0002779

Abstract

View articletitled, Comment on “Restoration of the original depth distribution from the SIMS profile using the depth resolution function in framework of RMR model” [J. Vac. Sci. Technol. B 41, 024003 (2023)]

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Perspectives

Measuring and understanding the nanomechanical properties of halide perovskites and their correlation to structure—A perspective

In Special Collection: Honoring Dr. Gary McGuire’s Research and Leadership as Editor of the Journal of Vacuum Science & Technology for Three Decades

Irit Rosenhek-Goldian; David Cahen; Sidney R. Cohen

J. Vac. Sci. Technol. B 41, 058501 (2023) https://doi.org/10.1116/6.0002794

Abstract

View articletitled, Measuring and understanding the nanomechanical properties of halide perovskites and their correlation to structure—A perspective

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Issues

Cover Image

Letters

ARTICLES

Electronic and Optoelectronic Materials, Devices and Processing

Energy Conversion and Storage Devices

Lithography

Nanoscale Science and Technology

MEMS and NEMS

Microelectronic and Nanoelectronic Devices

Measurement and Characterization

Vacuum Measurement and Technology

Errata

Comments

Perspectives

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