Skip Nav Destination
AlGaN nanowire deep ultraviolet LEDs with polarization enhanced tunnel junction and p-AlGaN layer by molecular beam epitaxy
Improve photo-to-dark current ratio of p-Si/SiO2/n-Ga2O3 heterojunction solar-blind photodetector by inserting SiO2 barrier layer
Observation of interfacial strain relaxation and electron beam damage thresholds in Al0.3In0.7N/GaN heterostructures by transmission electron microscopy
Volatile vapor knife of immersion lithography hood using solutal Marangoni effect
Selective growth of graphene films on gallium-focused ion beam irradiated domains
Fabrication of microstructures on curved hydrogel substrates
Physics based model of an AlGaN/GaN vacuum field effect transistor
Multiple connected artificial synapses based on electromigrated Au nanogaps
Application of deep-learning based techniques for automatic metrology on scanning and transmission electron microscopy images
Issues
Letters
Facile fabrication of nanoporous structure on β titanium alloy to eliminate stress shielding for bone implant
J. Vac. Sci. Technol. B 40, 050601 (2022)
https://doi.org/10.1116/6.0001962
AlGaN nanowire deep ultraviolet LEDs with polarization enhanced tunnel junction and p-AlGaN layer by molecular beam epitaxy

J. Vac. Sci. Technol. B 40, 050602 (2022)
https://doi.org/10.1116/6.0002037
ARTICLES
Electronic and Optoelectronic Materials, Devices and Processing
Yellow luminescence band defect related photocurrent instability of GaN p-i-n ultraviolet photodetectors
Liyong Pu; Zhiyuan Wang; Dong Zhou; Weizong Xu; Fangfang Ren; Dunjun Chen; Rong Zhang; Youdou Zheng; Hai Lu
J. Vac. Sci. Technol. B 40, 052201 (2022)
https://doi.org/10.1116/6.0001916
Electrochemical characterization of ZnO-based transparent materials as recording electrodes for neural probes in optogenetics
J. Vac. Sci. Technol. B 40, 052202 (2022)
https://doi.org/10.1116/6.0001836
Highly repeatable dry etch corner rounding solution for 0.11 μm shallow trench isolation
J. Vac. Sci. Technol. B 40, 052204 (2022)
https://doi.org/10.1116/6.0001897
On the chemistry mechanism for low-pressure chlorine process plasmas
J. Vac. Sci. Technol. B 40, 052205 (2022)
https://doi.org/10.1116/6.0002055
Improving detection of plasma etching end point using light compensation on optical emission spectra
J. Vac. Sci. Technol. B 40, 052206 (2022)
https://doi.org/10.1116/6.0002009
Improve photo-to-dark current ratio of p-Si/SiO2/n-Ga2O3 heterojunction solar-blind photodetector by inserting SiO2 barrier layer
J. Vac. Sci. Technol. B 40, 052207 (2022)
https://doi.org/10.1116/5.0107495
Observation of interfacial strain relaxation and electron beam damage thresholds in Al0.3In0.7N/GaN heterostructures by transmission electron microscopy
Keisuke Motoki; Zachary Engel; Christopher M. Matthews; Habib Ahmad; Timothy M. McCrone; Kohei Harada; W. Alan Doolittle
J. Vac. Sci. Technol. B 40, 052210 (2022)
https://doi.org/10.1116/6.0001974
Lithography
Volatile vapor knife of immersion lithography hood using solutal Marangoni effect
J. Vac. Sci. Technol. B 40, 052601 (2022)
https://doi.org/10.1116/5.0100753
Selective growth of graphene films on gallium-focused ion beam irradiated domains
Jacques Gierak; Gilles Raynaud; Caroline Guiziou; Jean René Coudevylle; Ali Madouri; Lars Bruchhaus; Achim Nadzeyka; Björn Whittman; Ralf Jede; Christophe David; Jean Christophe Girard
J. Vac. Sci. Technol. B 40, 052602 (2022)
https://doi.org/10.1116/6.0002104
Combined ultraviolet- and electron-beam lithography with Micro-Resist-Technology GmbH ma-N1400 resist
J. Vac. Sci. Technol. B 40, 052603 (2022)
https://doi.org/10.1116/6.0001918
Nanoscale Science and Technology
Reliability and resistance projections for rhodium and iridium interconnects from first-principles
J. Vac. Sci. Technol. B 40, 052801 (2022)
https://doi.org/10.1116/6.0001980
Dysprosium liquid metal alloy ion source for magnetic nanostructures
Lothar Bischoff; Nico Klingner; Paul Mazarov; Kilian Lenz; Ryszard Narkowicz; Wolfgang Pilz; Fabian Meyer
J. Vac. Sci. Technol. B 40, 052802 (2022)
https://doi.org/10.1116/6.0001837
Fabrication of microstructures on curved hydrogel substrates

J. Vac. Sci. Technol. B 40, 052804 (2022)
https://doi.org/10.1116/6.0002071
Microelectronic and Nanoelectronic Devices
Physics based model of an AlGaN/GaN vacuum field effect transistor
J. Vac. Sci. Technol. B 40, 053201 (2022)
https://doi.org/10.1116/6.0001959
Multiple connected artificial synapses based on electromigrated Au nanogaps

In Special Collection:
Neuromorphic Materials, Devices, and Processing
J. Vac. Sci. Technol. B 40, 053202 (2022)
https://doi.org/10.1116/6.0002081
Measurement and Characterization
Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
Antony Premkumar Peter; Alfonso Sepulveda Marquez; Johan Meersschaut; Praveen Dara; Timothee Blanquart; Takayama Tomomi; Ebisudani Taishi; Shiba Elichiro; Yosuke Kimura; Sander van Gompel; Pierre Morin
J. Vac. Sci. Technol. B 40, 054001 (2022)
https://doi.org/10.1116/6.0001922
Realistic simulation of reflection high-energy electron diffraction patterns for two-dimensional lattices using Ewald construction
J. Vac. Sci. Technol. B 40, 054002 (2022)
https://doi.org/10.1116/6.0001899
Application of deep-learning based techniques for automatic metrology on scanning and transmission electron microscopy images

J. Vac. Sci. Technol. B 40, 054003 (2022)
https://doi.org/10.1116/6.0001988
Vacuum Measurement and Technology
Zr-Al 16 wt. % and Na2CrO4 composite particles used for Na dispenser and its reaction kinetic
J. Vac. Sci. Technol. B 40, 054201 (2022)
https://doi.org/10.1116/6.0001863
Nonevaporable getter-MEMS for generating UHV conditions in small volumina
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 40, 054202 (2022)
https://doi.org/10.1116/6.0001991
Sensitivity of thermal conductivity vacuum gauges for constant current and constant temperature operation
J. Vac. Sci. Technol. B 40, 054203 (2022)
https://doi.org/10.1116/6.0001964
Comments
Comment on “ZnO/Ag/graphene transparent conductive oxide film with ultrathin Ag layer” [J. Vac. Sci. Technol. B 39, 052208 (2021)]
J. Vac. Sci. Technol. B 40, 056001 (2022)
https://doi.org/10.1116/6.0001934
Errata
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.