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Designing MoS2 channel properties for analog memory in neuromorphic applications
Atomic-resolution lithography with an on-chip scanning tunneling microscope
On the brightness, transverse emittance, and transverse coherence of field emission beam
Plasma-based area selective deposition for extreme ultraviolet resist defectivity reduction and process window improvement
Si nanocone structure fabricated by a relatively high-pressure hydrogen plasma in the range of 3.3–27 kPa
Letters
Morphology of Ge thin films crystallized by Au-induced layer exchange at low temperature (220 °C)
J. Vac. Sci. Technol. B 40, 030601 (2022)
https://doi.org/10.1116/6.0001774
Designing MoS2 channel properties for analog memory in neuromorphic applications
In Special Collection:
Neuromorphic Materials, Devices, and Processing
J. Vac. Sci. Technol. B 40, 030602 (2022)
https://doi.org/10.1116/6.0001815
Atomic-resolution lithography with an on-chip scanning tunneling microscope
J. Vac. Sci. Technol. B 40, 030603 (2022)
https://doi.org/10.1116/6.0001826
Review Articles
On the brightness, transverse emittance, and transverse coherence of field emission beam
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 40, 030801 (2022)
https://doi.org/10.1116/6.0001776
ARTICLES
Electronic and Optoelectronic Materials, Devices and Processing
Electrical characteristics of tungsten-doped InZnSnO thin film transistors by RF magnetron sputtering
J. Vac. Sci. Technol. B 40, 032201 (2022)
https://doi.org/10.1116/6.0001702
Effect of low frequency voltage waveform on plasma uniformity in a dual-frequency capacitively coupled plasma
In Special Collection:
Plasma Processing for Advanced Microelectronics
J. Vac. Sci. Technol. B 40, 032202 (2022)
https://doi.org/10.1116/6.0001732
Optimization of silicon etch rate in a CF4/Ar/O2 inductively coupled plasma
J. Vac. Sci. Technol. B 40, 032203 (2022)
https://doi.org/10.1116/6.0001745
Plasma-based area selective deposition for extreme ultraviolet resist defectivity reduction and process window improvement
In Special Collection:
Plasma Processing for Advanced Microelectronics
J. Vac. Sci. Technol. B 40, 032204 (2022)
https://doi.org/10.1116/6.0001665
Energy Conversion and Storage Devices
Supercapacitor characteristics of MoS2 and MoOx coated onto honeycomb-shaped carbon nanotubes
J. Vac. Sci. Technol. B 40, 032401 (2022)
https://doi.org/10.1116/6.0001773
Lithography
Reduction of exposing time in massively-parallel E-beam systems
J. Vac. Sci. Technol. B 40, 032602 (2022)
https://doi.org/10.1116/6.0001722
Nanoscale Science and Technology
Si nanocone structure fabricated by a relatively high-pressure hydrogen plasma in the range of 3.3–27 kPa
J. Vac. Sci. Technol. B 40, 032801 (2022)
https://doi.org/10.1116/6.0001676
Patterning challenges for direct metal etch of ruthenium and molybdenum at 32 nm metal pitch and below
J. Vac. Sci. Technol. B 40, 032802 (2022)
https://doi.org/10.1116/6.0001791
Extreme contact shrink for back end of line connectivity
In Special Collection:
Plasma Processing for Advanced Microelectronics
J. Vac. Sci. Technol. B 40, 032803 (2022)
https://doi.org/10.1116/6.0001757
Plasmonics
Time-resolved ion energy distribution in pulsed inductively coupled argon plasma with/without DC bias
J. Vac. Sci. Technol. B 40, 033601 (2022)
https://doi.org/10.1116/6.0001737
Vacuum Measurement and Technology
Vacuum control system for the Space Plasma Environment Research Facility
J. Vac. Sci. Technol. B 40, 034201 (2022)
https://doi.org/10.1116/6.0001785
