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Nanofabricating neural networks: Strategies, advances, and challenges
Plasma-assisted thermal-cyclic atomic-layer etching of tungsten and control of its selectivity to titanium nitride
Gate offset and emitter design effects of triode cold cathode electron beams on focal spot sizes for x-ray imaging techniques
Fabrication of black GaAs by maskless inductively coupled plasma etching in Cl2/BCl3/O2/Ar chemistry
In-plasma photo-assisted etching of Si with chlorine aided by an external vacuum ultraviolet source
Thermal-field emission from cones and wires
Fabrication of ultrathin suspended membranes from atomic layer deposition films
Digital biosensor for human cerebrospinal fluid detection with single-use sensing strips
Field emission arrays from graphite fabricated by laser micromachining
Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions
Fabrication of sub-micrometer 3D structures for terahertz oscillators by electron beam gray-tone lithography
All field emission models are wrong, … but are any of them useful?
Review Articles
Nanofabricating neural networks: Strategies, advances, and challenges
J. Vac. Sci. Technol. B 40, 020801 (2022)
https://doi.org/10.1116/6.0001649
ARTICLES
Electronic and Optoelectronic Materials, Devices and Processing
Plasma-assisted thermal-cyclic atomic-layer etching of tungsten and control of its selectivity to titanium nitride
In Special Collection:
Plasma Processing for Advanced Microelectronics
J. Vac. Sci. Technol. B 40, 022201 (2022)
https://doi.org/10.1116/6.0001660
Spectroscopic, structural, and strain-dependent analysis of suspended bulk WSe2 sheets
In Special Collection:
Strain Engineering of Nanophotonic Devices
J. Vac. Sci. Technol. B 40, 022202 (2022)
https://doi.org/10.1116/6.0001371
Plasma kinetics of c-C4F8 inductively coupled plasma revisited
In Special Collection:
Plasma Processing for Advanced Microelectronics
J. Vac. Sci. Technol. B 40, 022203 (2022)
https://doi.org/10.1116/6.0001631
Gate offset and emitter design effects of triode cold cathode electron beams on focal spot sizes for x-ray imaging techniques
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 40, 022204 (2022)
https://doi.org/10.1116/6.0001588
Fabrication of black GaAs by maskless inductively coupled plasma etching in Cl2/BCl3/O2/Ar chemistry
J. Vac. Sci. Technol. B 40, 022205 (2022)
https://doi.org/10.1116/6.0001570
Absolute measurement of vacuum ultraviolet photon flux in an inductively coupled plasma using a Au thin film
In Special Collection:
Plasma Processing for Advanced Microelectronics
J. Vac. Sci. Technol. B 40, 022206 (2022)
https://doi.org/10.1116/6.0001709
In-plasma photo-assisted etching of Si with chlorine aided by an external vacuum ultraviolet source
In Special Collection:
Plasma Processing for Advanced Microelectronics
J. Vac. Sci. Technol. B 40, 022207 (2022)
https://doi.org/10.1116/6.0001710
Plasma atomic layer etching for titanium nitride at low temperatures
In Special Collection:
Plasma Processing for Advanced Microelectronics
J. Vac. Sci. Technol. B 40, 022208 (2022)
https://doi.org/10.1116/6.0001602
Optical properties of Mo and amorphous MoOx, and application to antireflection coatings for metals
J. Vac. Sci. Technol. B 40, 022209 (2022)
https://doi.org/10.1116/6.0001659
Bilayer metal etch mask strategy for deep diamond etching
J. Vac. Sci. Technol. B 40, 022210 (2022)
https://doi.org/10.1116/6.0001424
Tailoring of structual, optical, and electrical properties of Cu films by sputtering power and deposition atmosphere
J. Vac. Sci. Technol. B 40, 022211 (2022)
https://doi.org/10.1116/6.0001673
Low trap density of oxygen-rich HfO2/GaN interface for GaN MIS-HEMT applications
J. Vac. Sci. Technol. B 40, 022212 (2022)
https://doi.org/10.1116/6.0001654
Lithography
Miniature plasma source for in situ extreme ultraviolet lithographic scanner cleaning
J. Vac. Sci. Technol. B 40, 022601 (2022)
https://doi.org/10.1116/6.0001636
Patterning characteristic control of sol-gel-derived random-structure oligomeric silsesquioxanes having a diazonaphthoquinone derivative
J. Vac. Sci. Technol. B 40, 022602 (2022)
https://doi.org/10.1116/6.0001717
Analysis of diffraction-based wafer alignment rejection for thick aluminum process
J. Vac. Sci. Technol. B 40, 022603 (2022)
https://doi.org/10.1116/6.0001666
Nanoscale Science and Technology
Thermal-field emission from cones and wires
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 40, 022801 (2022)
https://doi.org/10.1116/6.0001656
Negative differential resistance in photoassisted field emission from Si nanowires
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 40, 022802 (2022)
https://doi.org/10.1116/6.0001650
Effective polymerization technique for plasma-treated multiwalled carbon nanotubes to maximize wear resistance of composite polyurethane
J. Vac. Sci. Technol. B 40, 022803 (2022)
https://doi.org/10.1116/6.0001390
MEMS and NEMS
Fabrication of ultrathin suspended membranes from atomic layer deposition films
J. Vac. Sci. Technol. B 40, 023001 (2022)
https://doi.org/10.1116/6.0001309
Microelectronic and Nanoelectronic Devices
Interpreting the field emission equation for large area field emitters
J. Vac. Sci. Technol. B 40, 023201 (2022)
https://doi.org/10.1116/6.0001683
Digital biosensor for human cerebrospinal fluid detection with single-use sensing strips
J. Vac. Sci. Technol. B 40, 023202 (2022)
https://doi.org/10.1116/6.0001576
Field emission arrays from graphite fabricated by laser micromachining
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 40, 023203 (2022)
https://doi.org/10.1116/6.0001547
Rapid SARS-CoV-2 diagnosis using disposable strips and a metal-oxide-semiconductor field-effect transistor platform
J. Vac. Sci. Technol. B 40, 023204 (2022)
https://doi.org/10.1116/6.0001615
Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions
In Special Collection:
Plasma Processing for Advanced Microelectronics
J. Vac. Sci. Technol. B 40, 023205 (2022)
https://doi.org/10.1116/6.0001681
Fabrication of sub-micrometer 3D structures for terahertz oscillators by electron beam gray-tone lithography
J. Vac. Sci. Technol. B 40, 023206 (2022)
https://doi.org/10.1116/6.0001647
In-depth feasibility study of extreme ultraviolet damascene extension: Patterning, dielectric etch, and metallization
In Special Collection:
Plasma Processing for Advanced Microelectronics
J. Vac. Sci. Technol. B 40, 023207 (2022)
https://doi.org/10.1116/6.0001671
Measurement and Characterization
All field emission models are wrong, … but are any of them useful?
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 40, 024001 (2022)
https://doi.org/10.1116/6.0001677
Outgassing during large area field emitter operation in the diode system
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 40, 024002 (2022)
https://doi.org/10.1116/6.0001648
Low-macroscopic field emission structure: Using the shape of the conductor to identify a local difference in electric potential
J. Vac. Sci. Technol. B 40, 024004 (2022)
https://doi.org/10.1116/6.0001716
Vacuum Measurement and Technology
Comparison of the effective parameters of single-tip tungsten emitter using Fowler–Nordheim and Murphy–Good plots
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 40, 024201 (2022)
https://doi.org/10.1116/6.0001645
