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Thermochemical prediction of runaway energetic reactions involving organometallic (Al, In) and silane precursors in deposition tools
Efficient plasma-surface interaction surrogate model for sputtering processes based on autoencoder neural networks
Fundamental study on the selective etching of SiGe and Si in ClF3 gas for nanosheet gate-all-around transistor manufacturing: A first principle study
Letters
Effect of room air exposure on the field emission performance of UV light irradiated Si-gated field emitter arrays
J. Vac. Sci. Technol. B 40, 010601 (2022)
https://doi.org/10.1116/6.0001593
Experimental considerations in electron beam transport on a nanophotonic chip using alternating phase focusing
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 40, 010602 (2022)
https://doi.org/10.1116/6.0001598
Formation of ideally ordered porous Ga oxide by anodization of pretextured Ga
J. Vac. Sci. Technol. B 40, 010603 (2022)
https://doi.org/10.1116/6.0001619
Nanometer-scale etching of copper thin films in high-density plasma of an ethylenediamine/acetic acid/argon gas mixture
J. Vac. Sci. Technol. B 40, 010604 (2022)
https://doi.org/10.1116/6.0001592
High current silicon nanowire field emitter arrays
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 40, 010605 (2022)
https://doi.org/10.1116/6.0001639
ARTICLES
Electronic and Optoelectronic Materials, Devices and Processing
Thermochemical prediction of runaway energetic reactions involving organometallic (Al, In) and silane precursors in deposition tools
J. Vac. Sci. Technol. B 40, 012201 (2022)
https://doi.org/10.1116/6.0001503
Strain engineering in III-V photonic components through structuration of SiNx films
In Special Collection:
Strain Engineering of Nanophotonic Devices
J. Vac. Sci. Technol. B 40, 012202 (2022)
https://doi.org/10.1116/6.0001352
Ion energy control in an industrial ICP etch chamber without bias power usage
In Special Collection:
Plasma Processing for Advanced Microelectronics
J. Vac. Sci. Technol. B 40, 012203 (2022)
https://doi.org/10.1116/6.0001477
Photoinduced carrier transport mechanism in pn- and nn-GaN/GaON heterojunctions
J. Vac. Sci. Technol. B 40, 012204 (2022)
https://doi.org/10.1116/6.0001601
Lithography
Hybrid cross correlation and line-scan alignment strategy for CMOS chips electron-beam lithography processing
J. Vac. Sci. Technol. B 40, 012601 (2022)
https://doi.org/10.1116/6.0001278
Nanoscale Science and Technology
Behavior of the field enhancement due to mutual depolarization on a pair of triangular emitters at short and large separations
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 40, 012801 (2022)
https://doi.org/10.1116/6.0001555
Efficient plasma-surface interaction surrogate model for sputtering processes based on autoencoder neural networks
In Special Collection:
Plasma Processing for Advanced Microelectronics
J. Vac. Sci. Technol. B 40, 012802 (2022)
https://doi.org/10.1116/6.0001485
Field ion microscopy images of multilayered graphene and graphene oxide
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 40, 012803 (2022)
https://doi.org/10.1116/6.0001545
Effect of plasma-species to functionalize isocyanate-groups on multiwalled carbon nanotubes
J. Vac. Sci. Technol. B 40, 012804 (2022)
https://doi.org/10.1116/6.0001373
Observing secondary-electron yield and charging in an insulating material by ultralow-voltage scanning electron microscope
J. Vac. Sci. Technol. B 40, 012805 (2022)
https://doi.org/10.1116/6.0001465
Technology and measurements of three-layer NiFeCuMo/Ti/NiFeCuMo structures exhibiting the giant magnetoresistance phenomenon
J. Vac. Sci. Technol. B 40, 012806 (2022)
https://doi.org/10.1116/6.0001488
Microelectronic and Nanoelectronic Devices
Fundamental study on the selective etching of SiGe and Si in ClF3 gas for nanosheet gate-all-around transistor manufacturing: A first principle study
In Special Collection:
Plasma Processing for Advanced Microelectronics
J. Vac. Sci. Technol. B 40, 013201 (2022)
https://doi.org/10.1116/6.0001455
Ni3Si2 nanowires for efficient electron field emission and limitations of the Fowler–Nordheim model
In Special Collection:
Physics and Chemistry of Surfaces and Interfaces
J. Vac. Sci. Technol. B 40, 013202 (2022)
https://doi.org/10.1116/6.0001248
Origin of the current saturation level of p-doped silicon field emitters
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 40, 013203 (2022)
https://doi.org/10.1116/6.0001554
Quantitative thermodynamic investigation of thermal stability and diffusion barrier property of an amorphous cobalt alloy interlayer
J. Vac. Sci. Technol. B 40, 013204 (2022)
https://doi.org/10.1116/6.0001536
Plasmonics
Rapid preparation of amorphous Al2O3 on graphene surface by plasma electrolysis technology
J. Vac. Sci. Technol. B 40, 013601 (2022)
https://doi.org/10.1116/6.0001361
Measurement and Characterization
Comparison of single and concentric split-ring resonator generated microplasmas
J. Vac. Sci. Technol. B 40, 014001 (2022)
https://doi.org/10.1116/6.0001483
Enhanced focused ion beam milling with use of nested raster patterns
J. Vac. Sci. Technol. B 40, 014002 (2022)
https://doi.org/10.1116/6.0001411
New SIMS method to characterize hydrogen in polysilicon films
J. Vac. Sci. Technol. B 40, 014003 (2022)
https://doi.org/10.1116/6.0001472
Vacuum Measurement and Technology
Magnetron co-sputtered μm-thick Mo–Cu films as structural material with low heat extension for key parts of high-power millimeter-band vacuum microelectronic devices
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 40, 014201 (2022)
https://doi.org/10.1116/6.0001552
In situ quantitative field emission imaging using a low-cost CMOS imaging sensor
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 40, 014202 (2022)
https://doi.org/10.1116/6.0001551
Accuracy requirements of the microarrayed Einzel lens
J. Vac. Sci. Technol. B 40, 014203 (2022)
https://doi.org/10.1116/6.0001620
Notes
Method to create cuprate tunnel junctions with atomically sharp interfaces
J. Vac. Sci. Technol. B 40, 015001 (2022)
https://doi.org/10.1116/6.0001487
