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Issues
November 1986
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
ISSN 0734-211X
EISSN 2327-9877
Excimer laser photoablation of silicon
J. Vac. Sci. Technol. B 4, 1273–1277 (1986)
https://doi.org/10.1116/1.583505
Auger electron spectroscopy sputter depth profiles on AlxGa1−xAs protected by As and GaAs ultrathin layers
J. Vac. Sci. Technol. B 4, 1301–1305 (1986)
https://doi.org/10.1116/1.583509
HgTe–CdTe superlattices grown on lattice‐mismatched GaAs substrates
M. L. Wroge; D. J. Leopold; J. M. Ballingall; D. J. Peterman; B. J. Morris; J. G. Broerman; F. A. Ponce; G. B. Anderson
J. Vac. Sci. Technol. B 4, 1306–1309 (1986)
https://doi.org/10.1116/1.583510
Self‐aligned silicides or metals for very large scale integrated circuit applications
J. Vac. Sci. Technol. B 4, 1325–1331 (1986)
https://doi.org/10.1116/1.583514
Properties of titanium silicide films deposited by plasma‐enhanced chemical vapor deposition
J. Vac. Sci. Technol. B 4, 1332–1335 (1986)
https://doi.org/10.1116/1.583453
Summary Abstract: Semiconducting silicides as potential materials for electro‐optic very large scale integrated circuit interconnects
J. Vac. Sci. Technol. B 4, 1336–1338 (1986)
https://doi.org/10.1116/1.583454
Impurity effects in magnetron sputter deposited tungsten films
J. Vac. Sci. Technol. B 4, 1339–1343 (1986)
https://doi.org/10.1116/1.583455
The formation of titanium silicide by arsenic ion beam mixing and rapid thermal annealing
J. Vac. Sci. Technol. B 4, 1344–1351 (1986)
https://doi.org/10.1116/1.583456
A self‐aligned cobalt silicide technology using rapid thermal processing
J. Vac. Sci. Technol. B 4, 1358–1363 (1986)
https://doi.org/10.1116/1.583458
Diffusion barrier properties of thin selective chemical vapor deposited tungsten films
J. Vac. Sci. Technol. B 4, 1369–1376 (1986)
https://doi.org/10.1116/1.583460
Comparison of low temperature and high temperature refractory metal/silicides self‐aligned gate on GaAs
J. Vac. Sci. Technol. B 4, 1383–1391 (1986)
https://doi.org/10.1116/1.583462
Characterization of reactively sputtered WNx film as a gate metal for self‐alignment GaAs metal–semiconductor field effect transistors
J. Vac. Sci. Technol. B 4, 1392–1397 (1986)
https://doi.org/10.1116/1.583463
Tungsten silicide Schottky contacts on GaAs
J. Vac. Sci. Technol. B 4, 1398–1403 (1986)
https://doi.org/10.1116/1.583464
Diboride diffusion barriers in silicon and GaAs technology
J. Vac. Sci. Technol. B 4, 1409–1415 (1986)
https://doi.org/10.1116/1.583466
Interface defects and disorder in a‐Si:H/a‐SiNx:H superlattices
J. Vac. Sci. Technol. B 4, 1430–1434 (1986)
https://doi.org/10.1116/1.583469
Expitaxial metal–semiconductor structures and their properties
J. Vac. Sci. Technol. B 4, 1435–1443 (1986)
https://doi.org/10.1116/1.583470
The effects of elastic relaxation on transmission electron microscopy studies of thinned composition‐modulated materials
J. Vac. Sci. Technol. B 4, 1458–1466 (1986)
https://doi.org/10.1116/1.583473
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.