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Chemical reaction at the Al–GaSb interface

R. G. Susnow; G. P. Schwartz; G. J. Gualtieri; W. A. Sunder

J. Vac. Sci. Technol. B 4, 789–793 (1986) https://doi.org/10.1116/1.583557

Abstract

View articletitled, Chemical reaction at the Al–GaSb interface

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The thermal and ion‐assisted reactions of GaAs(100) with molecular chlorine

M. Balooch; D. R. Olander; W. J. Siekhaus

J. Vac. Sci. Technol. B 4, 794–805 (1986) https://doi.org/10.1116/1.583558

Abstract

View articletitled, The thermal and ion‐assisted reactions of GaAs(100) with molecular chlorine

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Si surface study after Ar ion‐assisted Cl₂ etching

Nahomi Aoto Takasaki; Eiji Ikawa; Yukinori Kurogi

J. Vac. Sci. Technol. B 4, 806–811 (1986) https://doi.org/10.1116/1.583516

Abstract

View articletitled, Si surface study after Ar ion‐assisted Cl2 etching

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Near surface contamination of silicon during reactive ion beam etching with chlorine

Peter K. Charvat; E. Eric Krueger; Arthur L. Ruoff

J. Vac. Sci. Technol. B 4, 812–817 (1986) https://doi.org/10.1116/1.583517

Abstract

View articletitled, Near surface contamination of silicon during reactive ion beam etching with chlorine

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SiO₂ planarization technology with biasing and electron cyclotron resonance plasma deposition for submicron interconnections

Katsuyuki Machida; Hideo Oikawa

J. Vac. Sci. Technol. B 4, 818–821 (1986) https://doi.org/10.1116/1.583518

Abstract

View articletitled, SiO2 planarization technology with biasing and electron cyclotron resonance plasma deposition for submicron interconnections

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The residue phenomenon in the anisotropic dry etching of conductive films deposited on topographic steps

Jer‐shen Maa; Bernard Halon

J. Vac. Sci. Technol. B 4, 822–828 (1986) https://doi.org/10.1116/1.583519

Abstract

View articletitled, The residue phenomenon in the anisotropic dry etching of conductive films deposited on topographic steps

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Geometrical design of an alignment mark for maskless ion implantation in GaAs

Tetsuo Morita; Eizo Miyauchi; Hiroshi Arimoto; Akira Takamori; Yasuo Bamba; Hisao Hashimoto

J. Vac. Sci. Technol. B 4, 829–832 (1986) https://doi.org/10.1116/1.583520

Abstract

View articletitled, Geometrical design of an alignment mark for maskless ion implantation in GaAs

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A new metallization technique for very large scale integrated structures: Experiments and computer simulation

H. P. Bader; M. A. Lardon

J. Vac. Sci. Technol. B 4, 833–836 (1986) https://doi.org/10.1116/1.583521

Abstract

View articletitled, A new metallization technique for very large scale integrated structures: Experiments and computer simulation

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Method for measuring contact resistance immediately after metal deposition

T. J. Faith; J. J. O’Neill, Jr.; R. S. Irven

J. Vac. Sci. Technol. B 4, 837–840 (1986) https://doi.org/10.1116/1.583522

Abstract

View articletitled, Method for measuring contact resistance immediately after metal deposition

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High performance very large scale integrated photomask with a silicide film

Y. Watakabe; S. Matsuda; A. Shigetomi; M. Hirosue; T. Kato; H. Nakata

J. Vac. Sci. Technol. B 4, 841–844 (1986) https://doi.org/10.1116/1.583523

Abstract

View articletitled, High performance very large scale integrated photomask with a silicide film

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Lithographic approach for 100 nm fabrication by focused ion beam

Shinji Matsui; Katsumi Mori; Kazuhide Saigo; Takao Shiokawa; Koichi Toyoda; Susumu Namba

J. Vac. Sci. Technol. B 4, 845–849 (1986) https://doi.org/10.1116/1.583524

Abstract

View articletitled, Lithographic approach for 100 nm fabrication by focused ion beam

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Lithographic fabrication of transmission electron microscopy cross sections in III–V materials

E. A. Dobisz; H. G. Craighead; E. D. Beebe; J. Levkoff

J. Vac. Sci. Technol. B 4, 850–852 (1986) https://doi.org/10.1116/1.583525

Abstract

View articletitled, Lithographic fabrication of transmission electron microscopy cross sections in III–V materials

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GaAs/GaAlAs device structures prepared by molecular beam epitaxy using indium‐free mounting techniques

A. J. SpringThorpe; P. Mandeville

J. Vac. Sci. Technol. B 4, 853–855 (1986) https://doi.org/10.1116/1.583526

Abstract

View articletitled, GaAs/GaAlAs device structures prepared by molecular beam epitaxy using indium‐free mounting techniques

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Summary Abstract: Kinetic processes in molecular beam epitaxy growth of III–V materials

C. T. Foxon

J. Vac. Sci. Technol. B 4, 867–869 (1986) https://doi.org/10.1116/1.583527

View articletitled, Summary Abstract: Kinetic processes in molecular beam epitaxy growth of III–V materials

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Nucleation and growth processes in thin film formation

J. A. Venables

J. Vac. Sci. Technol. B 4, 870–873 (1986) https://doi.org/10.1116/1.583528

Abstract

View articletitled, Nucleation and growth processes in thin film formation

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Nucleation and growth of GaAs on Ge and the structure of antiphase boundaries

P. M. Petroff

J. Vac. Sci. Technol. B 4, 874–877 (1986) https://doi.org/10.1116/1.583529

Abstract

View articletitled, Nucleation and growth of GaAs on Ge and the structure of antiphase boundaries

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A study of novel growth approaches to influence the growth mechanism and interface quality in heterostructures grown by molecular beam epitaxy

Jasprit Singh; S. Dudley; K. K. Bajaj

J. Vac. Sci. Technol. B 4, 878–883 (1986) https://doi.org/10.1116/1.583530

Abstract

View articletitled, A study of novel growth approaches to influence the growth mechanism and interface quality in heterostructures grown by molecular beam epitaxy

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Kinetics and energetics studies at surfaces and interfaces

A. Kobayashi; S.‐M. Paik; S. Das Sarma

J. Vac. Sci. Technol. B 4, 884–887 (1986) https://doi.org/10.1116/1.583531

Abstract

View articletitled, Kinetics and energetics studies at surfaces and interfaces

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Summary Abstract: The Ge/Sn system: Complex growth of a IV/IV heterostructure

H.‐J. Gossmann; B. A. Davidson

J. Vac. Sci. Technol. B 4, 888–889 (1986) https://doi.org/10.1116/1.583532

View articletitled, Summary Abstract: The Ge/Sn system: Complex growth of a IV/IV heterostructure

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Optimal surface and growth front of III–V semiconductors in molecular beam epitaxy: A study of kinetic processes via reflection high energy electron diffraction specular beam intensity measurements on GaAs(100)

P. Chen; J. Y. Kim; A. Madhukar; N. M. Cho

J. Vac. Sci. Technol. B 4, 890–895 (1986) https://doi.org/10.1116/1.583533

Abstract

View articletitled, Optimal surface and growth front of III–V semiconductors in molecular beam epitaxy: A study of kinetic processes via reflection high energy electron diffraction specular beam intensity measurements on GaAs(100)

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Study of heteroepitaxial interfaces by atomic resolution electron microscopy

N. Otsuka; C. Choi; L. A. Kolodziejski; R. L. Gunshor; R. Fischer; C. K. Peng; H. Morkoç; Y. Nakamura; S. Nagakura

J. Vac. Sci. Technol. B 4, 896–899 (1986) https://doi.org/10.1116/1.583534

Abstract

View articletitled, Study of heteroepitaxial interfaces by atomic resolution electron microscopy

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Summary Abstract: Surface states at the (110) surface of InAs and InSb and the growth of AlAs at submonolayer coverage of Al studied by angle‐resolved photoelectron spectroscopy

H. W. Richter; J. Barth; J. Ghijsen; R. L. Johnson; L. Ley; J. D. Riley; R. Sporken

J. Vac. Sci. Technol. B 4, 900–902 (1986) https://doi.org/10.1116/1.583515

View articletitled, Summary Abstract: Surface states at the (110) surface of InAs and InSb and the growth of AlAs at submonolayer coverage of Al studied by angle‐resolved photoelectron spectroscopy

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Microstructure studies of AuNiGe Ohmic contacts to n‐type GaAs

Masanori Murakami; K. D. Childs; John M. Baker; A. Callegari

J. Vac. Sci. Technol. B 4, 903–911 (1986) https://doi.org/10.1116/1.583535

Abstract

View articletitled, Microstructure studies of AuNiGe Ohmic contacts to n‐type GaAs

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Schottky and Ohmic Au contacts on GaAs: Microscopic and electrical investigation

Zuzanna Liliental‐Weber; R. Gronsky; J. Washburn; N. Newman; W. E. Spicer; E. R. Weber

J. Vac. Sci. Technol. B 4, 912–918 (1986) https://doi.org/10.1116/1.583536

Abstract

View articletitled, Schottky and Ohmic Au contacts on GaAs: Microscopic and electrical investigation

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Fermi level pinning and chemical interactions at metal–In_xGa_1−xAs(100) interfaces

L. J. Brillson; M. L. Slade; R. E. Viturro; M. K. Kelly; N. Tache; G. Margaritondo; J. M. Woodall; P. D. Kirchner; G. D. Pettit; S. L. Wright

J. Vac. Sci. Technol. B 4, 919–923 (1986) https://doi.org/10.1116/1.583537

Abstract

View articletitled, Fermi level pinning and chemical interactions at metal–InxGa1−xAs(100) interfaces

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Transition metals on GaAs(110): A case for extrinsic surface states

G. Hughes; R. Ludeke; F. Schäffler; D. Rieger

J. Vac. Sci. Technol. B 4, 924–930 (1986) https://doi.org/10.1116/1.583493

Abstract

View articletitled, Transition metals on GaAs(110): A case for extrinsic surface states

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On the Fermi level pinning behavior of metal/III–V semiconductor interfaces

N. Newman; W. E. Spicer; T. Kendelewicz; I. Lindau

J. Vac. Sci. Technol. B 4, 931–938 (1986) https://doi.org/10.1116/1.583494

Abstract

View articletitled, On the Fermi level pinning behavior of metal/III–V semiconductor interfaces

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Al on GaAs(110) revisited: Kinetic considerations

M. D. Williams; K. K. Chin; C. E. McCants; P. H. Mahowald; W. E. Spicer

J. Vac. Sci. Technol. B 4, 939–942 (1986) https://doi.org/10.1116/1.583495

Abstract

View articletitled, Al on GaAs(110) revisited: Kinetic considerations

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Reflection high‐energy electron diffraction study of the growth of In on GaAs(110) at different temperatures

D. E. Savage; M. G. Lagally

J. Vac. Sci. Technol. B 4, 943–954 (1986) https://doi.org/10.1116/1.583496

Abstract

View articletitled, Reflection high‐energy electron diffraction study of the growth of In on GaAs(110) at different temperatures

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Chemical reaction at the In on GaAs(110) interface

K. K. Chin; T. Kendelewicz; N. Newman; I. Lindau; W. E. Spicer

J. Vac. Sci. Technol. B 4, 955–958 (1986) https://doi.org/10.1116/1.583497

Abstract

View articletitled, Chemical reaction at the In on GaAs(110) interface

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Photoemission study of the reactive Pd/InP(110) interface

T. Kendelewicz; R. S. List; K. A. Bertness; M. D. Williams; I. Lindau; W. E. Spicer

J. Vac. Sci. Technol. B 4, 959–965 (1986) https://doi.org/10.1116/1.583498

Abstract

View articletitled, Photoemission study of the reactive Pd/InP(110) interface

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The interaction of Al, Mn, and Ag with clean and oxidized GaAs and InP(110) surfaces

R. H. Williams; A. B. McLean; D. A. Evans; W. G. Herrenden‐Harker

J. Vac. Sci. Technol. B 4, 966–973 (1986) https://doi.org/10.1116/1.583499

Abstract

View articletitled, The interaction of Al, Mn, and Ag with clean and oxidized GaAs and InP(110) surfaces

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Acceptor‐like electron traps control effective barrier for ultrahigh vacuum‐cleaved and laser‐annealed Al/InP

John H. Slowik; L. J. Brillson; H. Richter

J. Vac. Sci. Technol. B 4, 974–979 (1986) https://doi.org/10.1116/1.583500

Abstract

View articletitled, Acceptor‐like electron traps control effective barrier for ultrahigh vacuum‐cleaved and laser‐annealed Al/InP

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Role of Hg bonding in metal/Hg_1−xCd_xTe interface formation

D. J. Friedman; G. P. Carey; I. Lindau; W. E. Spicer; J. A. Wilson

J. Vac. Sci. Technol. B 4, 980–985 (1986) https://doi.org/10.1116/1.583501

Abstract

View articletitled, Role of Hg bonding in metal/Hg1−xCdxTe interface formation

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Summary Abstract: A photocurrent spectroscopy study of GaAs/Al_xGa_1−xAs quantum wells

R. T. Collins; K. v. Klitzing; K. Ploog

J. Vac. Sci. Technol. B 4, 986–987 (1986) https://doi.org/10.1116/1.583502

View articletitled, Summary Abstract: A photocurrent spectroscopy study of GaAs/AlxGa1−xAs quantum wells

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Current transport mechanisms in GaAs/AlAs tunnel structures grown by metal–organic chemical vapor deposition

A. R. Bonnefoi; D. H. Chow; T. C. McGill; R. D. Burnham; F. A. Ponce

J. Vac. Sci. Technol. B 4, 988–995 (1986) https://doi.org/10.1116/1.583503

Abstract

View articletitled, Current transport mechanisms in GaAs/AlAs tunnel structures grown by metal–organic chemical vapor deposition

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Effects of strain‐induced electric fields on the electronic structure of [111] growth axis semiconductor superlattices

C. Mailhiot; D. L. Smith

J. Vac. Sci. Technol. B 4, 996–999 (1986) https://doi.org/10.1116/1.583504

Abstract

View articletitled, Effects of strain‐induced electric fields on the electronic structure of [111] growth axis semiconductor superlattices

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Summary Abstract: Strain‐induced confined electron states in Si/Si_xGe_1−x superlattices

M. Jaros; Ian Morrison

J. Vac. Sci. Technol. B 4, 1000–1001 (1986) https://doi.org/10.1116/1.583568

View articletitled, Summary Abstract: Strain‐induced confined electron states in Si/SixGe1−x superlattices

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Electronic and optical properties of strained‐layer superlattices made of semiconductor alloys

D. Z.‐Y. Ting; Yia‐Chung Chang

J. Vac. Sci. Technol. B 4, 1002–1005 (1986) https://doi.org/10.1116/1.583569

Abstract

View articletitled, Electronic and optical properties of strained‐layer superlattices made of semiconductor alloys

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Strain‐dependence of localized states in quantum‐well structures

W. Pötz; D. K. Ferry

J. Vac. Sci. Technol. B 4, 1006–1010 (1986) https://doi.org/10.1116/1.583570

Abstract

View articletitled, Strain‐dependence of localized states in quantum‐well structures

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Photoconductivity of confined donors in Al_0.3Ga_0.7As/GaAs quantum wells

J. M. Mercy; N. C. Jarosik; B. D. McCombe; J. Ralston; G. Wicks

J. Vac. Sci. Technol. B 4, 1011–1013 (1986) https://doi.org/10.1116/1.583571

Abstract

View articletitled, Photoconductivity of confined donors in Al0.3Ga0.7As/GaAs quantum wells

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Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption

D. Bimberg; D. Mars; J. N. Miller; R. Bauer; D. Oertel

J. Vac. Sci. Technol. B 4, 1014–1021 (1986) https://doi.org/10.1116/1.583572

Abstract

View articletitled, Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption

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Electrical behavior of GaAs–AlAs heterostructures

T. K. Woodward; T. C. McGill; R. D. Burnham

J. Vac. Sci. Technol. B 4, 1022–1027 (1986) https://doi.org/10.1116/1.583573

Abstract

View articletitled, Electrical behavior of GaAs–AlAs heterostructures

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Surface and interface optical phonons of a GaAs–AlGaAs superlattice measured by high resolution electron energy loss spectroscopy

P. A. Thiry; M. Liehr; J. J. Pireaux; R. Caudano; Ph. Lambin; J. P. Vigneron; A. A. Lucas; T. Kuech

J. Vac. Sci. Technol. B 4, 1028–1032 (1986) https://doi.org/10.1116/1.583574

Abstract

View articletitled, Surface and interface optical phonons of a GaAs–AlGaAs superlattice measured by high resolution electron energy loss spectroscopy

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Influence of heterointerfaces on optical properties of CdTe/(Cd,Mn)Te and ZnSe/(Zn,Mn)Se superlattices

A. V. Nurmikko; Y. Hefetz; S.‐K. Chang; L. A. Kolodziejski; R. L. Gunshor

J. Vac. Sci. Technol. B 4, 1033–1036 (1986) https://doi.org/10.1116/1.583575

Abstract

View articletitled, Influence of heterointerfaces on optical properties of CdTe/(Cd,Mn)Te and ZnSe/(Zn,Mn)Se superlattices

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Optical evidence of staggered band alignments in (Al,Ga)As/AlAs multi‐quantum‐well structures

B. A. Wilson; P. Dawson; C. W. Tu; R. C. Miller

J. Vac. Sci. Technol. B 4, 1037–1040 (1986) https://doi.org/10.1116/1.583576

Abstract

View articletitled, Optical evidence of staggered band alignments in (Al,Ga)As/AlAs multi‐quantum‐well structures

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Summary Abstract: Light scattering determination of band offsets in semiconductor quantum wells

J. Menéndez; A. Pinczuk; A. C. Gossard; J. H. English; D. J. Werder; M. G. Lamont

J. Vac. Sci. Technol. B 4, 1041–1042 (1986) https://doi.org/10.1116/1.583577

View articletitled, Summary Abstract: Light scattering determination of band offsets in semiconductor quantum wells

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Pressure dependence of GaAs/Al_xGa_1−xAs quantum‐well bound states: The determination of valence‐band offsets

D. J. Wolford; T. F. Kuech; J. A. Bradley; M. A. Gell; D. Ninno; M. Jaros

J. Vac. Sci. Technol. B 4, 1043–1050 (1986) https://doi.org/10.1116/1.583578

Abstract

View articletitled, Pressure dependence of GaAs/AlxGa1−xAs quantum‐well bound states: The determination of valence‐band offsets

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Two‐level model of heterojunction band offsets

E. O. Kane

J. Vac. Sci. Technol. B 4, 1051–1054 (1986) https://doi.org/10.1116/1.583579

Abstract

View articletitled, Two‐level model of heterojunction band offsets

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Theoretical calculations of semiconductor heterojunction discontinuities

Chris G. Van de Walle; Richard M. Martin

J. Vac. Sci. Technol. B 4, 1055–1059 (1986) https://doi.org/10.1116/1.583580

Abstract

View articletitled, Theoretical calculations of semiconductor heterojunction discontinuities

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GaAs–Ge heterojunction interfaces: Cyclical behavior of band discontinuities

J. R. Waldrop; R. W. Grant; E. A. Kraut

J. Vac. Sci. Technol. B 4, 1060–1063 (1986) https://doi.org/10.1116/1.583541

Abstract

View articletitled, GaAs–Ge heterojunction interfaces: Cyclical behavior of band discontinuities

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Summary Abstract: Band discontinuities at InAsSb/GaSb heterojunctions

A. K. Srivastava; J. L. Zyskind; R. M. Lum; B. V. Dutt; J. K. Klingert

J. Vac. Sci. Technol. B 4, 1064–1065 (1986) https://doi.org/10.1116/1.583542

View articletitled, Summary Abstract: Band discontinuities at InAsSb/GaSb heterojunctions

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Summary Abstract: Failure of the common anion rule for lattice‐matched heterojunctions

J. Tersoff

J. Vac. Sci. Technol. B 4, 1066–1067 (1986) https://doi.org/10.1116/1.583543

View articletitled, Summary Abstract: Failure of the common anion rule for lattice‐matched heterojunctions

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Tight‐binding theory of heterojunction band lineups and interface dipoles

W. A. Harrison; J. Tersoff

J. Vac. Sci. Technol. B 4, 1068–1073 (1986) https://doi.org/10.1116/1.583544

Abstract

View articletitled, Tight‐binding theory of heterojunction band lineups and interface dipoles

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On the stability and structure of 5×5 and 7×7 reconstruction of the (111) surface of Si and Ge

Kunio Takayanagi; Yasumasa Tanishiro; Kousei Kajiyama

J. Vac. Sci. Technol. B 4, 1074–1078 (1986) https://doi.org/10.1116/1.583545

Abstract

View articletitled, On the stability and structure of 5×5 and 7×7 reconstruction of the (111) surface of Si and Ge

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Total‐energy calculations on the Takayanagi model for the Si(111) 7×7 surface

Guo‐Xin Qian; D. J. Chadi

J. Vac. Sci. Technol. B 4, 1079–1082 (1986) https://doi.org/10.1116/1.583546

Abstract

View articletitled, Total‐energy calculations on the Takayanagi model for the Si(111) 7×7 surface

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Summary Abstract: Atomic geometry and electronic structure of the (311)‐(1×1) surfaces of GaAs

C. Mailhiot; C. B. Duke; A. Paton; A. Kahn; K. Stiles

J. Vac. Sci. Technol. B 4, 1083–1084 (1986) https://doi.org/10.1116/1.583547

View articletitled, Summary Abstract: Atomic geometry and electronic structure of the (311)‐(1×1) surfaces of GaAs

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Virtual gap states and Fermi level pinning by adsorbates at semiconductor surfaces

W. Mönch

J. Vac. Sci. Technol. B 4, 1085–1090 (1986) https://doi.org/10.1116/1.583548

Abstract

View articletitled, Virtual gap states and Fermi level pinning by adsorbates at semiconductor surfaces

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Structural studies of (511) and (711) GaAs surface

K. Young; A. Kahn

J. Vac. Sci. Technol. B 4, 1091–1094 (1986) https://doi.org/10.1116/1.583549

Abstract

View articletitled, Structural studies of (511) and (711) GaAs surface

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Oxidation of InAs(110) and correlated changes of electronic surface properties

H.‐U. Baier; L. Koenders; W. Mönch

J. Vac. Sci. Technol. B 4, 1095–1099 (1986) https://doi.org/10.1116/1.583538

Abstract

View articletitled, Oxidation of InAs(110) and correlated changes of electronic surface properties

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Summary Abstract: Oxygen on GaAs(110): New results confirming the two‐step uptake‐model

F. Bartels; H. Gröll; W. Mönch

J. Vac. Sci. Technol. B 4, 1100–1101 (1986) https://doi.org/10.1116/1.583539

View articletitled, Summary Abstract: Oxygen on GaAs(110): New results confirming the two‐step uptake‐model

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Oxygen chemisorption on GaAs(110): Surface or subsurface growth?

K. A. Bertness; D. J. Friedman; P. H. Mahowald; J. J. Yeh; A. K. Wahi; I. Lindau; W. E. Spicer

J. Vac. Sci. Technol. B 4, 1102–1108 (1986) https://doi.org/10.1116/1.583550

Abstract

View articletitled, Oxygen chemisorption on GaAs(110): Surface or subsurface growth?

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O 1s studies of the oxidation of InP(110) and GaAs(110) surfaces

G. Hughes; R. Ludeke

J. Vac. Sci. Technol. B 4, 1109–1114 (1986) https://doi.org/10.1116/1.583551

Abstract

View articletitled, O 1s studies of the oxidation of InP(110) and GaAs(110) surfaces

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Summary Abstract: Unpinned (100) GaAs surfaces in air using photochemistry

A. C. Warren; S. D. Offsey; J. M. Woodall; P. D. Kirchner; T. I. Chappell; G. D. Pettit

J. Vac. Sci. Technol. B 4, 1115–1116 (1986) https://doi.org/10.1116/1.583540

View articletitled, Summary Abstract: Unpinned (100) GaAs surfaces in air using photochemistry

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Electronic structure of molecular beam epitaxy grown CaF₂ on Si(111)

U. O. Karlsson; F. J. Himpsel; J. F. Morar; D. Rieger; J. A. Yarmoff

J. Vac. Sci. Technol. B 4, 1117–1120 (1986) https://doi.org/10.1116/1.583552

Abstract

View articletitled, Electronic structure of molecular beam epitaxy grown CaF2 on Si(111)

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Summary Abstract: High resolution electron microscopy of CaF₂/silicon interfaces

F. A. Ponce; G. B. Anderson; M. A. O’Keefe; L. J. Schowalter

J. Vac. Sci. Technol. B 4, 1121–1122 (1986) https://doi.org/10.1116/1.583553

View articletitled, Summary Abstract: High resolution electron microscopy of CaF2/silicon interfaces

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Initial formation of the interface between a polar insulator and a nonpolar semiconductor: CaF₂ on Si(111)

Marjorie A. Olmstead; R. I. G. Uhrberg; R. D. Bringans; R. Z. Bachrach

J. Vac. Sci. Technol. B 4, 1123–1127 (1986) https://doi.org/10.1116/1.583554

Abstract

View articletitled, Initial formation of the interface between a polar insulator and a nonpolar semiconductor: CaF2 on Si(111)

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Summary Abstract: Passivation of InP by plasma deposited phosphorus: Effects of surface treatment

R. Schachter; M. Viscogliosi; L. A. Bunz; D. J. Olego; H. B. Serreze; P. M. Raccah

J. Vac. Sci. Technol. B 4, 1128–1129 (1986) https://doi.org/10.1116/1.583555

View articletitled, Summary Abstract: Passivation of InP by plasma deposited phosphorus: Effects of surface treatment

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Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces

Hideki Hasegawa; Hideo Ohno

J. Vac. Sci. Technol. B 4, 1130–1138 (1986) https://doi.org/10.1116/1.583556

Abstract

View articletitled, Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces

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