Skip Nav Destination
Issues
May 1986
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
ISSN 0734-211X
EISSN 2327-9877
Distortion correction and overlay accuracies achieved by the registration method using two‐stage standard mark system
J. Vac. Sci. Technol. B 4, 675–681 (1986)
https://doi.org/10.1116/1.583595
Dependence of minimum linewidth on electron‐beam properties in submicron lithography using a rectangular beam
J. Vac. Sci. Technol. B 4, 682–685 (1986)
https://doi.org/10.1116/1.583596
Electron beam pattern inspection system using digital image processing
J. Vac. Sci. Technol. B 4, 686–691 (1986)
https://doi.org/10.1116/1.583597
Reactive ion stream etching utilizing electron cyclotron resonance plasma
J. Vac. Sci. Technol. B 4, 696–700 (1986)
https://doi.org/10.1116/1.583599
Ion beam etching of InGaAs, InP, GaAs, Si, and Ge
J. Vac. Sci. Technol. B 4, 701–705 (1986)
https://doi.org/10.1116/1.583600
A measurement of intrinsic SiO2 film stress resulting from low temperature thermal oxidation of Si
J. Vac. Sci. Technol. B 4, 720–722 (1986)
https://doi.org/10.1116/1.583603
Material characterization of plasma‐enhanced chemical vapor deposited titanium silicide
J. Vac. Sci. Technol. B 4, 723–731 (1986)
https://doi.org/10.1116/1.583563
Process and film characterization of low pressure tetraethylorthosilicate–borophosphosilicate glass
J. Vac. Sci. Technol. B 4, 732–744 (1986)
https://doi.org/10.1116/1.583564
PtSi contact metallurgy using electron‐beam evaporated Pt films and different annealing processes
J. Vac. Sci. Technol. B 4, 745–754 (1986)
https://doi.org/10.1116/1.583559
Low resistance polysilicon interconnects with self‐aligned metal
J. Vac. Sci. Technol. B 4, 755–757 (1986)
https://doi.org/10.1116/1.583560
Auger electron spectroscopy evaluation of voids in aluminum–1% silicon integrated circuit metallization
J. Vac. Sci. Technol. B 4, 758–761 (1986)
https://doi.org/10.1116/1.583561
The effects of germanium concentration on the compound formation and morphology of gold‐based contacts to gallium arsenide
J. Vac. Sci. Technol. B 4, 762–768 (1986)
https://doi.org/10.1116/1.583565
Quantum‐well charge‐coupled devices for charge‐coupled device‐addressed multiple‐quantum‐well spatial light modulators
J. Vac. Sci. Technol. B 4, 769–772 (1986)
https://doi.org/10.1116/1.583562
Suppression of aluminum hillock growth by overlayers of silicon dioxide chemically‐vapor‐deposited at low temperature
J. Vac. Sci. Technol. B 4, 774–776 (1986)
https://doi.org/10.1116/1.583567
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.